In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different ph...In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system.展开更多
MEMS压电式水听器需要使用模拟前端对产生的信号进行预处理,但当前水听器的模拟前端大都基于板级方案,检测性能、集成度和适用范围有待提高,需要设计一款模拟前端专用芯片实现MEMS压电式水听器系统的微型化、阵列化。首先根据MEMS压电...MEMS压电式水听器需要使用模拟前端对产生的信号进行预处理,但当前水听器的模拟前端大都基于板级方案,检测性能、集成度和适用范围有待提高,需要设计一款模拟前端专用芯片实现MEMS压电式水听器系统的微型化、阵列化。首先根据MEMS压电式水听器的特点和需求,确定了芯片的系统架构;其次设计了自动增益控制环路、可编程增益放大器和频带可变低通滤波器,拓宽了芯片的适用范围;最后将斩波结合自调零的降噪技术用于芯片,以满足水听器低噪声测量的要求。基于0.18μm CMOS工艺对模拟前端芯片进行设计,后仿真结果显示所设计电路在1 k Hz时等效输入噪声功率谱密度为59 n V/√Hz,输入电荷量与输出电压的非线性误差小于1.26%。验证了模拟前端专用芯片可以对MEMS压电式水听器产生的低频微弱信号实现低噪声放大。展开更多
To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for...To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.展开更多
Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order in...Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.展开更多
A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the paramet...A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.展开更多
RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryl...RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryless predistortion cannot linearize PAs effectively. After analyzing PA memory effects, a novel predistortion method based on wavelet networks (WNs) is proposed to linearize wideband RF power amplifiers. A complex wavelet network with tapped delay lines is applied to construct the predistorter and then a complex backpropagation algorithm is developed to train the predistorter parameters. The simulation results show that compared with the previously published feed-forward neural network predistortion method, the proposed method provides faster convergence rate and better performance in reducing out-of-band spectral regrowth.展开更多
In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established n...In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established nonlinear time series method to determine model structure. Then, we discuss the process of model parameter extraction in detailed. Finally, a 2 W WCDMA power amplifier is measured to verify the performance of EH model, and good agreement between model output and measurement result shows our model can accurately predict output characteristic of the power amplifier.展开更多
正交时频空(Orthogonal Time Frequency Space,OTFS)调制因其在高速移动场景下优越的抗多普勒频移特性,被视为未来低地球轨道(Low Earth Orbit,LEO)卫星通信的关键候选技术。然而,OTFS信号固有的峰均功率比(Peak-to-Average Power Ratio...正交时频空(Orthogonal Time Frequency Space,OTFS)调制因其在高速移动场景下优越的抗多普勒频移特性,被视为未来低地球轨道(Low Earth Orbit,LEO)卫星通信的关键候选技术。然而,OTFS信号固有的峰均功率比(Peak-to-Average Power Ratio,PAPR)问题,会严重降低卫星高功率放大器(High-Power Amplifier,HPA)的效率,并引入显著的非线性失真,从而恶化误码率(Bit Error Rate,BER)性能。为解决此问题,提出了一种创新的混合自适应削波(Hybrid Adaptive Clipping,HAC)与神经网络预失真(Neural Network Predistortion)的方法——HAC-NNP。自适应削波(Adaptive Clipping,AC)模块根据实时信道质量或业务需求动态调整削波门限,在PAPR抑制和信号原始失真之间取得初步平衡;轻量级的神经网络(Neural Network,NN)预失真器在发射端对削波后的信号进行处理,训练后用于补偿由“削波处理”和“卫星HPA非线性效应”共同引入的复杂失真。仿真结果表明,在典型的LEO卫星信道和HPA非线性模型下,与传统削波方法相比,该HAC-NNP方法在将PAPR降低约3.5 dB的同时,能够显著改善由削波和HPA非线性共同导致的信号失真,将BER性能恢复至接近无HPA非线性影响的理想水平。展开更多
A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete...A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete components.Each channel consists of an integrator,a pole-zero cancellation net,and a linear amplification stage,which can be adapted to accommodate either positive or negative input signals.The RMS equivalent input noise charges are 3.3 fC,the conversion gains are approximately±2 mV∕fC,and the intrinsic time resolution reaches 32 ps.In the prototype PPAC application,the CSA performs as well as the commercial FTA820A amplifier,providing a position resolution as good as 0.17 mm,and exhibiting reliable stability during several hours of continuous data acquisition.展开更多
For a multi-frequency non-reciprocal optical device,we first realize multi-frequency optical non-reciprocal transmission using a non-Hermitian multi-mode resonator array.Practically,multi-frequency operation can add c...For a multi-frequency non-reciprocal optical device,we first realize multi-frequency optical non-reciprocal transmission using a non-Hermitian multi-mode resonator array.Practically,multi-frequency operation can add channels to the non-reciprocal optical device and the non-reciprocity can route optical signals and prevent the reverse flow of noise.Using the Scully–Lamb model and gain saturation effect,we accomplish dual-frequency non-reciprocal transmission by introducing nonlinearity into a linear array of four-mode resonators.The accomplishment is directly demonstrated by the non-reciprocal transmission phenomena present in the non-divergent peaks.For example,a directional cyclic amplifier is constructed with non-reciprocal units.Regarding potential applications,non-reciprocal optical systems can be employed in dual-frequency control,parallel information processing,photonic integrated circuits,optical devices and so on.展开更多
A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulatio...A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.展开更多
基金supported by the National Key Research and Development Program of China(Grant No.2019YFA0706300)the National Natural Science Foundation of China(Grant Nos.U22B2010,62035018,and U2001601)+1 种基金the Program of Marine Economy Development Special Fund(Six Marine Industries)under the Department of Natural Resources of Guangdong Province(Grant No.GDNRC[2024]16)the project supported by the Southern Marine Science and Engineering Guangdong Laboratory(Zhuhai)(Grant No.SML2023SP231).
文摘In a few-mode erbium-doped fiber(FM-EDF),which is a key section in a space-division multiplexing(SDM)communication system,linearly polarized(LP)and orbital angular momentum(OAM)modes,as twomode bases with different phase profiles,can be transformed into each other.In principle,the LP and OAM modes have a different mode spatial intensity distribution and a gain difference for FM-EDF amplifiers.How to analyze and characterize the differential mode-bases gain(DMBG)is important,but still an issue.We build,for the first time to our knowledge,a local analysis model composed of discrete elements of the FM-EDF cross section in areas of mode spatial intensity distribution azimuthal variation.Using the model of the two mode bases,analysis of local particle number distribution and detailed description of the local gain difference are realized,and the overall gain difference between the two mode bases is obtained.By building an amplifier system based on mode phase profile controlling,the gain of two mode bases is characterized experimentally.The measured DMBG is∼0.8 dB in the second-order mode,which is consistent with the simulation result.This result provides a potential way to reduce the mode gain difference in the FM-EDF,which is important in improving the performance of the SDM communication system.
文摘MEMS压电式水听器需要使用模拟前端对产生的信号进行预处理,但当前水听器的模拟前端大都基于板级方案,检测性能、集成度和适用范围有待提高,需要设计一款模拟前端专用芯片实现MEMS压电式水听器系统的微型化、阵列化。首先根据MEMS压电式水听器的特点和需求,确定了芯片的系统架构;其次设计了自动增益控制环路、可编程增益放大器和频带可变低通滤波器,拓宽了芯片的适用范围;最后将斩波结合自调零的降噪技术用于芯片,以满足水听器低噪声测量的要求。基于0.18μm CMOS工艺对模拟前端芯片进行设计,后仿真结果显示所设计电路在1 k Hz时等效输入噪声功率谱密度为59 n V/√Hz,输入电荷量与输出电压的非线性误差小于1.26%。验证了模拟前端专用芯片可以对MEMS压电式水听器产生的低频微弱信号实现低噪声放大。
基金The National High Technology Research and Development Program of China (863 Program) (No.2008AA01Z211)the Project of Industry-Academia-Research Demonstration Base of Education Ministry of Guangdong Province (No.2007B090200012)
文摘To reduce the number of digital predistortion coefficients, a step memory polynomial （SMP）predistorter is presented. The number of predistortion coefficients is decreased by adjusting the maximum nonlinear order for different memory orders in the traditional memory polynomial （MP）predistorter. The proposed SNIP predistorter is identified by an offline learning structure on which the coefficients can be extracted directly from the sampled input and output of a PA. Simulation results show that the SMP predistorter is not tied to a particular PA model and is, therefore, robust. The effectiveness of the SMP predistorter is demonstrated by simulations and experiments on an MP model, a parallel Wiener model, a Wiener-Hammerstein model, a sparsedelay memory polynomial model and a real PA which is fabricated based on the Freescale LDMOSFET MRF21030. Compared with the traditional MP predistorter, the SMP predistorter can reduce the number of coefficients by 60%.
文摘Transistors are nonlinear devices, which can produce nonlinear distortion in amplifier while amplifying signals. For weak nonlinear distortion, the expressions of total harmonic distortion (THD), the second order intermodulation distortion(IM2 ), the third order intermodulation distortion(IM 3) and intercept point(IP 3) are deduced. With the aid of software Multisim, we simulate transistor common emitter amplifier, transistor common emitter amplifier with resistor in emitter, differential amplifier and differential amplifier with resistor between emitters. The simulational results and theoretical analyses are almost the same.
基金The National Natural Science Foundation of China(No.60621002)the National High Technology Research and Development Pro-gram of China(863 Program)(No.2007AA01Z2B4).
文摘A novel behavioral model using three-layer time-delay feed-forward neural networks （TDFFNN）is adopted to model radio frequency （RF）power amplifiers exhibiting memory nonlinearities. In order to extract the parameters, the back- propagation algorithm is applied to train the proposed neural networks. The proposed model is verified by the typical odd- order-only memory polynomial model in simulation, and the performance is compared with different numbers of taped delay lines（TDLs） and perceptrons of the hidden layer. For validating the TDFFNN model by experiments, a digital test bench is set up to collect input and output data of power amplifiers at a 60 × 10^6 sample/s sampling rate. The 3.75 MHz 16-QAM signal generated in the vector signal generator（VSG） is chosen as the input signal, when measuring the dynamic AM/AM and AM/PM characteristics of power amplifiers. By comparisons and analyses, the presented model provides a good performance in convergence, accuracy and efficiency, which is approved by simulation results and experimental results in the time domain and frequency domain.
基金Project (No. 60372026) supported by the National Natural ScienceFoundation of China
文摘RF power amplifiers (PAs) are usually considered as memoryless devices in most existing predistortion techniques. Nevertheless, in wideband communication systems, PA memory effects can no longer be ignored and memoryless predistortion cannot linearize PAs effectively. After analyzing PA memory effects, a novel predistortion method based on wavelet networks (WNs) is proposed to linearize wideband RF power amplifiers. A complex wavelet network with tapped delay lines is applied to construct the predistorter and then a complex backpropagation algorithm is developed to train the predistorter parameters. The simulation results show that compared with the previously published feed-forward neural network predistortion method, the proposed method provides faster convergence rate and better performance in reducing out-of-band spectral regrowth.
文摘In this paper, an envelope Hammerstein （EH） model is introduced to describe dynamic input -output characteristics of RF power amplifiers. In the modeling approach, we use a new truncation method and an established nonlinear time series method to determine model structure. Then, we discuss the process of model parameter extraction in detailed. Finally, a 2 W WCDMA power amplifier is measured to verify the performance of EH model, and good agreement between model output and measurement result shows our model can accurately predict output characteristic of the power amplifier.
基金supported by the National Natural Science Foundation of China(Nos.U2167202,12225504,12005276)the Natural Science Foundation of Shandong Province(No.ZR2024QA172)the Fundamental Research Funds of Shandong University.
文摘A 32-channel charge-sensitive amplifier(CSA)is designed for fast timing in the delay-line readout of a parallel plate avalanche counter(PPAC)array.It is realized on a PCB with operational amplifiers and other discrete components.Each channel consists of an integrator,a pole-zero cancellation net,and a linear amplification stage,which can be adapted to accommodate either positive or negative input signals.The RMS equivalent input noise charges are 3.3 fC,the conversion gains are approximately±2 mV∕fC,and the intrinsic time resolution reaches 32 ps.In the prototype PPAC application,the CSA performs as well as the commercial FTA820A amplifier,providing a position resolution as good as 0.17 mm,and exhibiting reliable stability during several hours of continuous data acquisition.
基金supported by the National Nature Science Foundation of China(Grant Nos.12475019 and 12073056)the Major National Science and Technology Project of China(Grant No.BX2024B054)+1 种基金National Lab of Solid State Microstructure of Nanjing University(Grant Nos.M35040,M35053,and M37014)the Natural Science Foundation of Shandong Province(Grant No.ZR2024MA038)。
文摘For a multi-frequency non-reciprocal optical device,we first realize multi-frequency optical non-reciprocal transmission using a non-Hermitian multi-mode resonator array.Practically,multi-frequency operation can add channels to the non-reciprocal optical device and the non-reciprocity can route optical signals and prevent the reverse flow of noise.Using the Scully–Lamb model and gain saturation effect,we accomplish dual-frequency non-reciprocal transmission by introducing nonlinearity into a linear array of four-mode resonators.The accomplishment is directly demonstrated by the non-reciprocal transmission phenomena present in the non-divergent peaks.For example,a directional cyclic amplifier is constructed with non-reciprocal units.Regarding potential applications,non-reciprocal optical systems can be employed in dual-frequency control,parallel information processing,photonic integrated circuits,optical devices and so on.
文摘A CMOS radio frequency low noise amplifier with high linearity and low operation voltage of less than 1.0V is presented.In this circuit,an auxiliary MOSFET in the triode region is used to boost the linearity.Simulation shows that this method can boost the input-referred 3rd-order intercept point with much less power dissipation than that of traditional power/linearity tradeoff solution which pays at least 1dB power for 1dB linearity improvement.It is also shown that the size of the common-gate PMOS transistor needs to be optimized to reduce its loaded input impedance so as not to degrade the linearity due to high voltage gain at its source terminal.The simulation is carried out with TSMC 0.18μm RF CMOS technology and SpectreRF.
