The coupling of fast redox kinetics,high-energy density,and prolonged lifespan is a permanent aspiration for aqueous rechargeable zinc batteries,but which has been severely hampered by a narrow voltage range and subop...The coupling of fast redox kinetics,high-energy density,and prolonged lifespan is a permanent aspiration for aqueous rechargeable zinc batteries,but which has been severely hampered by a narrow voltage range and suboptimal compatibility between the electrolytes and electrodes.Here,we unprecedentedly introduced an electric ambipolar effect for synergistic manipulation on Zn^(2+)ternary-hydrated eutectic electrolyte(ZTE)enabling high-performance Zn-Br_(2)batteries.The electric ambipolar effect motivates strong dipole interactions among hydrated perchlorates and bipolar ligands of L-carnitine(L-CN)and sulfamide,which reorganized primary cations solvation sheath in a manner of forming Zn[(L-CN)(SA)(H_(2)O)_(4)]^(2+)configuration and dynamically restricting desolvated H2O molecules,thus ensuring a broadened electrochemical window of 2.9 V coupled with high ionic conductivity.Noticeably,L-CN affords an electrostatic shielding effect and an in situ construction of organic-inorganic interphase,endowing oriented Zn anode plating/stripping reversibly for over 2400 h.Therefore,with the synergy of electro/nucleophilicity and exceptional compatibility,the ZTE electrolyte dynamically boosts the conversion redox of Zn-Br_(2)batteries in terms of high specific capacity and stable cycling performance.These findings open a window for designing electrolytes with synergetic chemical stability and compatibility toward advanced zinc-ion batteries.展开更多
A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics ...A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.展开更多
A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric （GHL-TFET） is proposed and investigated by TCAD simulation. Current-voltage characteristics, energy-band diagrams, ...A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric （GHL-TFET） is proposed and investigated by TCAD simulation. Current-voltage characteristics, energy-band diagrams, and the distri- bution of the band-to-band tunneling （BTBT） generation rate of GHL-TFET are analyzed. In addition, the effect of the vertical channel width on the ON-current is studied and the thickness of the gate dielectric is optimized for better suppression of ambipolar current. Moreover, analog/RF figure-of-merits of GHL-TFET are also investigated in terms of the cut-off frequency and gain bandwidth production. Simulation results indicate that the ON-current of GHL-TFET is increased by about three orders of magnitude compared with that of the conventional L-shaped TFET. Besides, the introduction of the hetero-gate-dielectric not only suppresses the ambipolar current effectively but also improves the analog/RF performance drastically. It is demonstrated that the maximum cut-off frequency of GHL-TFET is about 160 GHz, which is 20 times higher than that of the conventional L-shaped TFET.展开更多
Graphene is considered as a promising material to construct field-effect transistors (FETs) for high frequency electronic applications due to its unique structure and properties,mainly including extremely high carrier...Graphene is considered as a promising material to construct field-effect transistors (FETs) for high frequency electronic applications due to its unique structure and properties,mainly including extremely high carrier mobility and saturation velocity,the ultimate thinnest body and stability.Through continuously scaling down the gate length and optimizing the structure,the cut-off frequency of graphene FET (GFET) was rapidly increased and up to about 300 GHz,and further improvements are also expected.Because of the lack of an intrinsic band gap,the GFETs present typical ambipolar transfer characteristic without off state,which means GFETs are suitable for analog electronics rather than digital applications.Taking advantage of the ambipolar characteristic,GFET is demonstrated as an excellent building block for ambipolar electronic circuits,and has been used in applications such as highperformance frequency doublers,radio frequency mixers,digital modulators,and phase detectors.展开更多
We fabricated heterojunction organic field-effect transistors （OFETs） using copper phthalocyanine （CuPc） and hexadecafluorophtholocyaninatocopper （F16CuPc） as hole transport layer and electron transport layer, r...We fabricated heterojunction organic field-effect transistors （OFETs） using copper phthalocyanine （CuPc） and hexadecafluorophtholocyaninatocopper （F16CuPc） as hole transport layer and electron transport layer, respectively. Compared with F 16 CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1 × 10-3 to 8.7 ×10-3 cm2/（V.s）, but the p-type behavior was not observed. To enhanced the hole injection, we modified the source-lrain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved. Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5 × 10-3 and 3.1 × 10-3 cm2/（V.s）, respectively.展开更多
The interplay between lattice geometry,band topology and electronic correlations in the newly discovered kagome compounds AV3Sb5(A=K,Rb,Cs) makes this family a novel playground to investigate emergent quantum phenomen...The interplay between lattice geometry,band topology and electronic correlations in the newly discovered kagome compounds AV3Sb5(A=K,Rb,Cs) makes this family a novel playground to investigate emergent quantum phenomena,such as unconventional superconductivity,chiral charge density wave and electronic nematicity.These exotic quantum phases naturally leave nontrivial fingerprints in transport properties of AV3Sb5,both in electrical and thermal channels,which are prominent probes to uncover the underlying mechanisms.In this brief review,we highlight the unusual electrical and thermal transport properties observed in the unconventional charge ordered state of A V3Sb5,including giant anomalous Hall,anomalous Nernst,ambipolar Nernst and anomalous thermal Hall effects.Connections of these anomalous transport properties to time-reversal symmetry breaking,topological and multiband fermiology,as well as electronic nematicity,are also discussed.Finally,a perspective together with challenges of this rapid growing field are given.展开更多
基金provided by the National Natural Science Foundation of China(Grant No.52373208 and 61831021)the ECNU Academic Innovation Promotion Program for Excellent Doctoral Students(YBNLTS2024-021).
文摘The coupling of fast redox kinetics,high-energy density,and prolonged lifespan is a permanent aspiration for aqueous rechargeable zinc batteries,but which has been severely hampered by a narrow voltage range and suboptimal compatibility between the electrolytes and electrodes.Here,we unprecedentedly introduced an electric ambipolar effect for synergistic manipulation on Zn^(2+)ternary-hydrated eutectic electrolyte(ZTE)enabling high-performance Zn-Br_(2)batteries.The electric ambipolar effect motivates strong dipole interactions among hydrated perchlorates and bipolar ligands of L-carnitine(L-CN)and sulfamide,which reorganized primary cations solvation sheath in a manner of forming Zn[(L-CN)(SA)(H_(2)O)_(4)]^(2+)configuration and dynamically restricting desolvated H2O molecules,thus ensuring a broadened electrochemical window of 2.9 V coupled with high ionic conductivity.Noticeably,L-CN affords an electrostatic shielding effect and an in situ construction of organic-inorganic interphase,endowing oriented Zn anode plating/stripping reversibly for over 2400 h.Therefore,with the synergy of electro/nucleophilicity and exceptional compatibility,the ZTE electrolyte dynamically boosts the conversion redox of Zn-Br_(2)batteries in terms of high specific capacity and stable cycling performance.These findings open a window for designing electrolytes with synergetic chemical stability and compatibility toward advanced zinc-ion batteries.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61306116 and 61472322)
文摘A new T-shaped tunnel field-effect transistor(TTFET) with gate dielectric spacer(GDS) structure is proposed in this paper. To further studied the effects of GDS structure on the TTFET, detailed device characteristics such as current-voltage relationships, energy band diagrams, band-to-band tunneling(BTBT) rate and the magnitude of the electric field are investigated by using TCAD simulation. It is found that compared with conventional TTFET and TTFET with gate-drain overlap(GDO) structure, GDS-TTFET not only has the minimum ambipolar current but also can suppress the ambipolar current under a more extensive bias range. Furthermore, the analog/RF performances of GDS-TTFET are also investigated in terms of transconductance, gate-source capacitance, gate-drain capacitance, cutoff frequency, and gain bandwidth production. By inserting a low-κ spacer layer between the gate electrode and the gate dielectric, the GDS structure can effectively reduce parasitic capacitances between the gate and the source/drain, which leads to better performance in term of cutoff frequency and gain bandwidth production. Finally, the thickness of the gate dielectric spacer is optimized for better ambipolar current suppression and improved analog/RF performance.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092)
文摘A Ge/Si heterojunction L-shaped tunnel field-effect transistor combined with hetero-gate-dielectric （GHL-TFET） is proposed and investigated by TCAD simulation. Current-voltage characteristics, energy-band diagrams, and the distri- bution of the band-to-band tunneling （BTBT） generation rate of GHL-TFET are analyzed. In addition, the effect of the vertical channel width on the ON-current is studied and the thickness of the gate dielectric is optimized for better suppression of ambipolar current. Moreover, analog/RF figure-of-merits of GHL-TFET are also investigated in terms of the cut-off frequency and gain bandwidth production. Simulation results indicate that the ON-current of GHL-TFET is increased by about three orders of magnitude compared with that of the conventional L-shaped TFET. Besides, the introduction of the hetero-gate-dielectric not only suppresses the ambipolar current effectively but also improves the analog/RF performance drastically. It is demonstrated that the maximum cut-off frequency of GHL-TFET is about 160 GHz, which is 20 times higher than that of the conventional L-shaped TFET.
基金supported by the Ministry of Science and Technology of China(2011CB933001and2011CB933002)the National Natural Science Foundation of China(61071013)
文摘Graphene is considered as a promising material to construct field-effect transistors (FETs) for high frequency electronic applications due to its unique structure and properties,mainly including extremely high carrier mobility and saturation velocity,the ultimate thinnest body and stability.Through continuously scaling down the gate length and optimizing the structure,the cut-off frequency of graphene FET (GFET) was rapidly increased and up to about 300 GHz,and further improvements are also expected.Because of the lack of an intrinsic band gap,the GFETs present typical ambipolar transfer characteristic without off state,which means GFETs are suitable for analog electronics rather than digital applications.Taking advantage of the ambipolar characteristic,GFET is demonstrated as an excellent building block for ambipolar electronic circuits,and has been used in applications such as highperformance frequency doublers,radio frequency mixers,digital modulators,and phase detectors.
基金Project supported by the National Natural Science Foundation of China(Nos.61475074,61204095)
文摘We fabricated heterojunction organic field-effect transistors （OFETs） using copper phthalocyanine （CuPc） and hexadecafluorophtholocyaninatocopper （F16CuPc） as hole transport layer and electron transport layer, respectively. Compared with F 16 CuPc based OFETs, the electron field-effect mobility in the heterojunction OFETs increased from 3.1 × 10-3 to 8.7 ×10-3 cm2/（V.s）, but the p-type behavior was not observed. To enhanced the hole injection, we modified the source-lrain electrodes using the MoO3 buffer layer, and the hole injection can be effectively improved. Eventually, the ambipolar transport characteristics of the CuPc/F16CuPc based OFETs with a MoO3 buffer layer were achieved, and the field-effect mobilities of electron and hole were 2.5 × 10-3 and 3.1 × 10-3 cm2/（V.s）, respectively.
基金support by National Natural Science Foundation of China (Grant No. 11904040)Chongqing Research Program of Basic Research and Frontier Technology,China (Grant No. cstc2020jcyj-msxm X0263)Chinesisch-Deutsche Mobilit?tsprogamm of Chinesisch-Deutsche Zentrum für Wissenschaftsf?rderung (Grant No. M-0496)。
文摘The interplay between lattice geometry,band topology and electronic correlations in the newly discovered kagome compounds AV3Sb5(A=K,Rb,Cs) makes this family a novel playground to investigate emergent quantum phenomena,such as unconventional superconductivity,chiral charge density wave and electronic nematicity.These exotic quantum phases naturally leave nontrivial fingerprints in transport properties of AV3Sb5,both in electrical and thermal channels,which are prominent probes to uncover the underlying mechanisms.In this brief review,we highlight the unusual electrical and thermal transport properties observed in the unconventional charge ordered state of A V3Sb5,including giant anomalous Hall,anomalous Nernst,ambipolar Nernst and anomalous thermal Hall effects.Connections of these anomalous transport properties to time-reversal symmetry breaking,topological and multiband fermiology,as well as electronic nematicity,are also discussed.Finally,a perspective together with challenges of this rapid growing field are given.
