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Modified model of gate leakage currents in AlGaN/GaN HEMTs
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作者 王元刚 冯志红 +4 位作者 吕元杰 谭鑫 敦少博 房玉龙 蔡树军 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第10期345-349,共5页
It has been reported that the gate leakage currents are described by the Frenkel-Poole emission(FPE) model,at temperatures higher than 250 K.However,the gate leakage currents of our passivated devices do not accord wi... It has been reported that the gate leakage currents are described by the Frenkel-Poole emission(FPE) model,at temperatures higher than 250 K.However,the gate leakage currents of our passivated devices do not accord with the FPE model.Therefore,a modified FPE model is developed in which an additional leakage current,besides the gate(ⅠⅡ),is added.Based on the samples with different passivations,the ⅠⅡcaused by a large number of surface traps is separated from total gate currents,and is found to be linear with respect to(φB-Vg)0.5.Compared with these from the FPE model,the calculated results from the modified model agree well with the Ig-Vgmeasurements at temperatures ranging from 295 K to 475 K. 展开更多
关键词 gate leakage currents FPE model additional leakage current surface traps
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