The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technolo...The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technologies based on amorphous Si,poly Si,and IGZO,face challenges in meeting the requirements of next-generation displays,including larger dimensions,higher refresh rates,increased pixel density,greater brightness,and reduced power consumption.In this context,2D chalcogenides have emerged as promising candidates for thin-film transistors(TFTs)in display backplanes,offering advantages such as high mobility,low leakage current,mechanical robustness,and transparency.This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes.We delve into the structural characteristics,electronic properties,and synthesis methods of 2D chalcogenides,emphasizing scalable growth strategies that are relevant to large-area display backplanes.Additionally,we discuss mechanical flexibility and strain engineering,crucial for the development of flexible displays.Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization,while considering scaling over a large area.Active-matrix implementation of 2D TFTs in various applications is also explored,benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes.Furthermore,the latest development on the integration of 2D chalcogenide TFTs with different display technologies,such as OLED,quantum dot,and MicroLED displays has been reviewed in detail.Finally,challenges and opportunities in the field are discussed with a brief insight into emerging trends and research directions.展开更多
This paper presents a new compensation pixe] circuit suitable for active-matrix organic light-emitting diode （AMOLED） stereoscopic three dimensional （3D~ displays with shutter glasses. The simultaneous emissio~ met...This paper presents a new compensation pixe] circuit suitable for active-matrix organic light-emitting diode （AMOLED） stereoscopic three dimensional （3D~ displays with shutter glasses. The simultaneous emissio~ method was used to solve the crosstalk problem, in which the periods of initialization and threshold voltage detectio11 occur for each pixel of whole panel simultaneously. Furthermore, there was no need of the periods of initialization and threshold voltage detection from the second frame beginning by one-time detection method. employing threshold voltage The non-uniformity of the proposed pixel circuit was considerably low with an average value of 8.6% measured from 20 discrete proposed pixel circuits integrated by In-Zn-O thin film transistors （IZO TFTs）. It was shown that the OLED current almost remains constant for the number of frames up to 70 even the threshold voltage detection period only exists in the first frame.展开更多
Optoelectronic devices,including light sensors and light-emitting diodes,are indispensable for our daily lives.Lead-based optoelectronic materials,including colloidal quantum dots and lead-halide perovskites,have emer...Optoelectronic devices,including light sensors and light-emitting diodes,are indispensable for our daily lives.Lead-based optoelectronic materials,including colloidal quantum dots and lead-halide perovskites,have emerged as promising candidates for the next-generation optoelectronic devices.This is primarily attributed to their tailorable optoelectronic properties,industrialization-compatible manufacturing techniques,seamless integration with silicon technology and excellent device performance.In this perspective,we review recent advancements in lead-based optoelectronic devices,specifically focusing on photodetectors and active displays.By discussing the current challenges and limitations of lead-based optoelectronics,we find the exciting potential of on-chip,in-situ fabrication methods for realizing high-performance optoelectronic systems.展开更多
This work presents a new voltage programmed pixel circuit for an active-matrix organic light-emitting diode（AMOLED） display.The proposed pixel circuit consists of six low temperature polycrystalline silicon thinfilm...This work presents a new voltage programmed pixel circuit for an active-matrix organic light-emitting diode（AMOLED） display.The proposed pixel circuit consists of six low temperature polycrystalline silicon thinfilm transistors（LTPS TFTs）,one storage capacitor,and one OLED,and is verified by simulation work using HSPICE software.Besides effectively compensating for the threshold voltage variation of the driving TFT and OLED,the proposed pixel circuit offers an AC driving mode for the OLED,which can suppress the degradation of the OLED.Moreover,a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.展开更多
A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the conseque...A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N – 1 post-compensation frames without periods of initialization and threshold voltage detection.The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors（5T2C）. In–Zn–O thin-film transistors（IZO TFTs） are used to build the proposed 5T2 C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames（N） preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range.Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits.展开更多
基金supported in part by the National Research Foundation of Korea Grant Number:RS-2024-00448809National Research Foundation of Korea Grant Number:RS-2025-00517255+1 种基金National Research Foundation of Korea Grant Number:No.2021M3H4A1A02056037supported by Basic Science Research Program through the National Research Foundation of Korean(NRF)funded by the Ministry of Education(2020R1A6A1A03040516).
文摘The evolution of display backplane technologies has been driven by the relentless pursuit of higher form factor and superior performance coupled with lower power consumption.Current state-of-the-art backplane technologies based on amorphous Si,poly Si,and IGZO,face challenges in meeting the requirements of next-generation displays,including larger dimensions,higher refresh rates,increased pixel density,greater brightness,and reduced power consumption.In this context,2D chalcogenides have emerged as promising candidates for thin-film transistors(TFTs)in display backplanes,offering advantages such as high mobility,low leakage current,mechanical robustness,and transparency.This comprehensive review explores the significance of 2D chalcogenides as materials for TFTs in next-generation display backplanes.We delve into the structural characteristics,electronic properties,and synthesis methods of 2D chalcogenides,emphasizing scalable growth strategies that are relevant to large-area display backplanes.Additionally,we discuss mechanical flexibility and strain engineering,crucial for the development of flexible displays.Performance enhancement strategies for 2D chalcogenide TFTs have been explored encompassing techniques in device engineering and geometry optimization,while considering scaling over a large area.Active-matrix implementation of 2D TFTs in various applications is also explored,benchmarking device performance on a large scale which is a necessary aspect of TFTs used in display backplanes.Furthermore,the latest development on the integration of 2D chalcogenide TFTs with different display technologies,such as OLED,quantum dot,and MicroLED displays has been reviewed in detail.Finally,challenges and opportunities in the field are discussed with a brief insight into emerging trends and research directions.
文摘This paper presents a new compensation pixe] circuit suitable for active-matrix organic light-emitting diode （AMOLED） stereoscopic three dimensional （3D~ displays with shutter glasses. The simultaneous emissio~ method was used to solve the crosstalk problem, in which the periods of initialization and threshold voltage detectio11 occur for each pixel of whole panel simultaneously. Furthermore, there was no need of the periods of initialization and threshold voltage detection from the second frame beginning by one-time detection method. employing threshold voltage The non-uniformity of the proposed pixel circuit was considerably low with an average value of 8.6% measured from 20 discrete proposed pixel circuits integrated by In-Zn-O thin film transistors （IZO TFTs）. It was shown that the OLED current almost remains constant for the number of frames up to 70 even the threshold voltage detection period only exists in the first frame.
基金supported by the National Key Research and Development Program of China(Nos.2024YFA1209503 and 2021YFB3501800)the National Natural Science Foundation of China(Grant Nos.62322505 and 62374069)the Innovation Project of Optics Valley Laboratory(No.OVL2023ZD002).
文摘Optoelectronic devices,including light sensors and light-emitting diodes,are indispensable for our daily lives.Lead-based optoelectronic materials,including colloidal quantum dots and lead-halide perovskites,have emerged as promising candidates for the next-generation optoelectronic devices.This is primarily attributed to their tailorable optoelectronic properties,industrialization-compatible manufacturing techniques,seamless integration with silicon technology and excellent device performance.In this perspective,we review recent advancements in lead-based optoelectronic devices,specifically focusing on photodetectors and active displays.By discussing the current challenges and limitations of lead-based optoelectronics,we find the exciting potential of on-chip,in-situ fabrication methods for realizing high-performance optoelectronic systems.
文摘This work presents a new voltage programmed pixel circuit for an active-matrix organic light-emitting diode（AMOLED） display.The proposed pixel circuit consists of six low temperature polycrystalline silicon thinfilm transistors（LTPS TFTs）,one storage capacitor,and one OLED,and is verified by simulation work using HSPICE software.Besides effectively compensating for the threshold voltage variation of the driving TFT and OLED,the proposed pixel circuit offers an AC driving mode for the OLED,which can suppress the degradation of the OLED.Moreover,a high contrast ratio can be achieved by the proposed pixel circuit since the OLED does not emit any light except for the emission period.
基金supported by the State Key Development Program for Basic Research of China(No.2015CB655000)the National Natural Science Foundation of China(Nos.61204089,61306099,61036007,51173049+1 种基金U1301243)the Fundamental Research Funds for the Central Universities(Nos.2013ZZ0046,2014ZZ0028)
文摘A new voltage-programmed driving scheme named the mixed parallel addressing scheme is presented for AMOLED displays, in which one compensation interval can be divided into the first compensation frame and the consequent N – 1 post-compensation frames without periods of initialization and threshold voltage detection.The proposed driving scheme has the advantages of both high speed and low driving power due to the mixture of the pipeline technology and the threshold voltage one-time detection technology. Corresponding to the proposed driving scheme, we also propose a new voltage-programmed compensation pixel circuit, which consists of five TFTs and two capacitors（5T2C）. In–Zn–O thin-film transistors（IZO TFTs） are used to build the proposed 5T2 C pixel circuit. It is shown that the non-uniformity of the proposed pixel circuit is considerably reduced compared with that of the conventional 2T1C pixel circuit. The number of frames（N） preserved in the proposed driving scheme are measured and can be up to 35 with the variation of the OLED current remaining in an acceptable range.Moreover, the proposed voltage-programmed driving scheme can be more valuable for an AMOLED display with high resolution, and may also be applied to other compensation pixel circuits.
