Changes in refractive index and the corresponding changes in the characteristics of an optical waveguide in enabling propagation of light are the basis for many modern silicon photonic devices. Optical properties of t...Changes in refractive index and the corresponding changes in the characteristics of an optical waveguide in enabling propagation of light are the basis for many modern silicon photonic devices. Optical properties of these active nanoscale waveguides are sensitive to the little changes in geometry, external injection/biasing, and doping profiles, and can be crucial in design and manufacturing processes. This paper brings the active silicon waveguide for complete characterization of various distinctive guiding parameters, including perturbation in real and imaginary refractive index, mode loss, group velocity dispersion, and bending loss, which can be instrumental in developing optimal design specifications for various application-centric active silicon waveguides.展开更多
In order to improve the oxidation resistance of Ti Al alloy, silicide coatings were prepared by pack cementation method at 1273, 1323, and 1373 K for 1-3 hours. Scanning electron microscopy（SEM）, energy dispersive s...In order to improve the oxidation resistance of Ti Al alloy, silicide coatings were prepared by pack cementation method at 1273, 1323, and 1373 K for 1-3 hours. Scanning electron microscopy（SEM）, energy dispersive spectrometry（EDS） and X-ray diffraction（XRD） were employed to investigate the microstructures and phase constitutions of the coatings. The experimental results show that all silicon deposition coatings have multi-layer structure. The microstructure and composition of silicide coatings strongly depend on siliconizing temperatures. In order to investigate the rate controlling step of pack siliconizing on Ti Al alloy, coating growth kinetics was analyzed by measuring the mass gains per unit area of silicided samples as a function of time and temperature. The results showed that the rate controlling step was gas-phase diffusion step and the growth rate constant（k） ranged from 1.53 mg^2/（cm^4·h^2） to 2.3 mg^2/（cm^4·h^2）. Activation energy（Q） for the process was calculated as 109 k J/mol, determined by Arrhenius＇ equation： k = k0 exp[–Q/（RT）].展开更多
文摘Changes in refractive index and the corresponding changes in the characteristics of an optical waveguide in enabling propagation of light are the basis for many modern silicon photonic devices. Optical properties of these active nanoscale waveguides are sensitive to the little changes in geometry, external injection/biasing, and doping profiles, and can be crucial in design and manufacturing processes. This paper brings the active silicon waveguide for complete characterization of various distinctive guiding parameters, including perturbation in real and imaginary refractive index, mode loss, group velocity dispersion, and bending loss, which can be instrumental in developing optimal design specifications for various application-centric active silicon waveguides.
基金Funded by the Natural Science Program for Basic Research in Key Areas of Shaanxi Province(2014JZ012)
文摘In order to improve the oxidation resistance of Ti Al alloy, silicide coatings were prepared by pack cementation method at 1273, 1323, and 1373 K for 1-3 hours. Scanning electron microscopy（SEM）, energy dispersive spectrometry（EDS） and X-ray diffraction（XRD） were employed to investigate the microstructures and phase constitutions of the coatings. The experimental results show that all silicon deposition coatings have multi-layer structure. The microstructure and composition of silicide coatings strongly depend on siliconizing temperatures. In order to investigate the rate controlling step of pack siliconizing on Ti Al alloy, coating growth kinetics was analyzed by measuring the mass gains per unit area of silicided samples as a function of time and temperature. The results showed that the rate controlling step was gas-phase diffusion step and the growth rate constant（k） ranged from 1.53 mg^2/（cm^4·h^2） to 2.3 mg^2/（cm^4·h^2）. Activation energy（Q） for the process was calculated as 109 k J/mol, determined by Arrhenius＇ equation： k = k0 exp[–Q/（RT）].
