This paper presents a 5-bit active LO phase shifter with a new vector sum method for 9–12 GHz applications. The 5-bit phase shifter is composed of four 3-bit sub phase shifters by adopting the new vector sum method, ...This paper presents a 5-bit active LO phase shifter with a new vector sum method for 9–12 GHz applications. The 5-bit phase shifter is composed of four 3-bit sub phase shifters by adopting the new vector sum method, which reduces the requirements on the resolution of the variable gain amplifier（VGA）. The variable gain function is realized by switch on/off parallel input transistor pairs rather than changing the bias current of the VGA,which avoids the linearity variation and drain-source voltage variation existing in the quadrature vector sum active phase shifter. The 5-bit active LO phase shifter is fabricated in TSMC 0.13μm CMOS technology. The measured results show that the phase shifter achieves 5-bit phase shift accuracy. The average conversion gain for 32 phase states is 0：5 to 7 d B from 9 to 12 GHz. The RMS gain error and the RMS phase error are smaller than 0.8 d B and 4° respectively. The current consumption is 27.7 m A from a 1.2 V supply voltage.展开更多
设计了一种应用于X波段本振移相的新型矢量合成移相器,该新型矢量合成移相器主要由4个3bit的子移相器组成,可以实现5bit的移相精度.该移相器降低了对可变增益放大器（Variable Gain Amplifier,VGA）的精度要求.可变增益放大器的可变增...设计了一种应用于X波段本振移相的新型矢量合成移相器,该新型矢量合成移相器主要由4个3bit的子移相器组成,可以实现5bit的移相精度.该移相器降低了对可变增益放大器（Variable Gain Amplifier,VGA）的精度要求.可变增益放大器的可变增益通过一组开关控制增益单元来实现,从而避免了传统正交矢量合成移相器中VGA偏置电流改变造成的线性度波动和漏源波动问题,故应用于本振移相时可以实现较小的移相增益误差和相位误差.为了验证该移相器的本振移相性能,设计了一个混频器作为测试电路.本设计采用0.13μm CMOS工艺实现,电源电压为1.2V.测试结果表明,在9-12GHz内,混频器在本振移相器驱动下的平均转换增益为-0.5-7dB,移相器的移相精度为5bit,均方根增益误差最大值为0.8dB,均方根相位误差最大值为4°.直流功耗为40mW.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61376037)the National Twelve-Five Project(No.513***)
文摘This paper presents a 5-bit active LO phase shifter with a new vector sum method for 9–12 GHz applications. The 5-bit phase shifter is composed of four 3-bit sub phase shifters by adopting the new vector sum method, which reduces the requirements on the resolution of the variable gain amplifier（VGA）. The variable gain function is realized by switch on/off parallel input transistor pairs rather than changing the bias current of the VGA,which avoids the linearity variation and drain-source voltage variation existing in the quadrature vector sum active phase shifter. The 5-bit active LO phase shifter is fabricated in TSMC 0.13μm CMOS technology. The measured results show that the phase shifter achieves 5-bit phase shift accuracy. The average conversion gain for 32 phase states is 0：5 to 7 d B from 9 to 12 GHz. The RMS gain error and the RMS phase error are smaller than 0.8 d B and 4° respectively. The current consumption is 27.7 m A from a 1.2 V supply voltage.
文摘设计了一种应用于X波段本振移相的新型矢量合成移相器,该新型矢量合成移相器主要由4个3bit的子移相器组成,可以实现5bit的移相精度.该移相器降低了对可变增益放大器（Variable Gain Amplifier,VGA）的精度要求.可变增益放大器的可变增益通过一组开关控制增益单元来实现,从而避免了传统正交矢量合成移相器中VGA偏置电流改变造成的线性度波动和漏源波动问题,故应用于本振移相时可以实现较小的移相增益误差和相位误差.为了验证该移相器的本振移相性能,设计了一个混频器作为测试电路.本设计采用0.13μm CMOS工艺实现,电源电压为1.2V.测试结果表明,在9-12GHz内,混频器在本振移相器驱动下的平均转换增益为-0.5-7dB,移相器的移相精度为5bit,均方根增益误差最大值为0.8dB,均方根相位误差最大值为4°.直流功耗为40mW.
