Power loss of Fe-3%Sigrain-oriented silicon steelwas measured after ballscribing with different spacing using a self-designed tool.Three different sections of power loss,including hysteresis loss,abnormalloss,and eddy...Power loss of Fe-3%Sigrain-oriented silicon steelwas measured after ballscribing with different spacing using a self-designed tool.Three different sections of power loss,including hysteresis loss,abnormalloss,and eddy current loss,were measured and calculated,respectively.The loss variation and ratio were analyzed based on the experimentaldata.At 1.0 T,hysteresis loss of tested steelwith scribing spacing of 8 mm descends by 8.2% compared to samples without scribing,which is similar to the totalloss variation,and abnormalloss descends by 16.8%.At 1.0 T,hysteresis loss ratio of the steelwith scribing spacing of 16 mm ascends from 55.7% to 57.9%,and eddy current loss increases from 17.4% to 24.1%,while abnormalloss descends from 26.9% to 23.7%.The experimentalresults show that the reduction of power loss after scribing is mainly due to decreasing of hysteresis loss and abnormalloss.展开更多
In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for th...In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence（PL）spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.展开更多
基金Funded by the National Natural Science Foundation of China(Nos.51174057 and 51404159)the National High Technology Research and Development Program(No.2012AA03A503)Research Fund for the Doctoral Program of Higher Education of China(No.20130042110040)
文摘Power loss of Fe-3%Sigrain-oriented silicon steelwas measured after ballscribing with different spacing using a self-designed tool.Three different sections of power loss,including hysteresis loss,abnormalloss,and eddy current loss,were measured and calculated,respectively.The loss variation and ratio were analyzed based on the experimentaldata.At 1.0 T,hysteresis loss of tested steelwith scribing spacing of 8 mm descends by 8.2% compared to samples without scribing,which is similar to the totalloss variation,and abnormalloss descends by 16.8%.At 1.0 T,hysteresis loss ratio of the steelwith scribing spacing of 16 mm ascends from 55.7% to 57.9%,and eddy current loss increases from 17.4% to 24.1%,while abnormalloss descends from 26.9% to 23.7%.The experimentalresults show that the reduction of power loss after scribing is mainly due to decreasing of hysteresis loss and abnormalloss.
基金supported by the National Natural Science Foundation of China under Grant Nos.61376067 and61474118
文摘In this Letter, the loss and gain characteristics of an unconventional InxGa1-xAs∕Ga As asymmetrical step well structure consisting of variable indium contents of InxGa1-xAs materials are measured and analyzed for the first time, to the best of our knowledge. This special well structure is formed based on the indium-rich effect from the material growth process. The loss and gain are obtained by optical pumping and photoluminescence（PL）spectrum measurement at dual facets of an edge-emitting device. Unlike conventional quasi-rectangle wells, the asymmetrical step well may lead to a hybrid strain configuration containing both compressive and tensile strains and, thus, special loss and gain characteristics. The results will be very helpful in the development of multiple wavelength In Ga As-based semiconductor lasers.
