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Structural,optical,and electrical properties of Cu-doped ZrO_2 films prepared by magnetron co-sputtering
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作者 姚念琦 刘智超 +1 位作者 顾广瑞 吴宝嘉 《Chinese Physics B》 SCIE EI CAS CSCD 2017年第10期384-388,共5页
Copper (Cu)-doped ZrO2 (CZO) films with different Cu content (0 at.%- 8.07 at.%) are successfully deposited on Si (100) substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. T... Copper (Cu)-doped ZrO2 (CZO) films with different Cu content (0 at.%- 8.07 at.%) are successfully deposited on Si (100) substrates by direct current (DC) and radio frequency (RF) magnetron co-sputtering. The influences of Cu content on structural, morphological, optical and electrical properties of CZO films are discussed in detail. The CZO films exhibit ZrO2 monocline (1^-11) preferred orientation, which indicates that Cu atoms are doped in ZrO2 host lattice. The crystallite size estimated form x-ray diffraction (XRD) increases by Cu doping, which accords with the result observed from the scanning electron microscope (SEM). The electrical resistivity decreases from 2.63 Ω·cm to 1.48 Ω·cm with Cu doping content increasing, which indicates that the conductivity of CZO film is improved. However, the visible light transmittances decrease slightly by Cu doping and the optical band gap values decrease from 4.64 eV to 4.48 eV for CZO fihns. 展开更多
关键词 Cu-doped zro2 films magnetron co-sputtering RESISTIVITY TRANSMITTANCE
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