High-performance thin-film transistors （TFTs） with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fa...High-performance thin-film transistors （TFTs） with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fabricated under the maximum process temperature of 200℃. First, we investigate the effect of post-annealing environment such as N2, H2-N2 （4%） and O2 on the device performance, revealing that o2 annealing can greatly enhance the device performance. Further, we compare the influences of annealing temperature and time on the device performance. It is found that long anneMing at 200℃is equivalent to and even outperforms short annealing at 300℃. Excellent electrical characteristics of the TFTs are demonstrated after 02 anneMing at 200℃ for 35 rain, including a low off-current of 2.3 × 10-13 A, a small sub-threshold swing of 245 m V/dec, a large on/off current ratio of 7.6×10s, and a high electron effective mobility of 22.1cm2/V.s. Under negative gate bias stress at -10 V, the above devices show better electrical stabilities than those post-annealed at 300℃. Thus the fabricated high-performance ZnO TFT with a low thermal budget is very promising for flexible electronic applications.展开更多
The ineluctable introduction of lithium salt to polymer solid-state electrolytes incurs a compromise between strength,ionic conductivity,and thickness.Here,we propose Al_(2)O_(3)-coated polyimide(AO/PI)porous film as ...The ineluctable introduction of lithium salt to polymer solid-state electrolytes incurs a compromise between strength,ionic conductivity,and thickness.Here,we propose Al_(2)O_(3)-coated polyimide(AO/PI)porous film as a high-strength substrate to support fast-ion-conducting polymer-in-salt(PIS)solid-state electrolytes,aiming to suppress lithium dendrite growth and improve full-cell performance.The Al_(2)O_(3)coating layer not only refines the wettability of polyimide porous film to PIS,but also performs as a high modulus protective layer to suppress the growth of lithium dendrites.The resulting PI/AO@PIS exhibits a small thickness of only 35μm with an outstanding tensile strength of 11.3 MPa and Young's modulus of 537.6 MPa.In addition,the PI/AO@PIS delivers a high ionic conductivity of 0.1 m S/cm at 25°C.As a result,the PI/AO@PIS enables symmetric Li cells to achieve exceptional cyclability for over 1000 h at 0.1 m A/cm2without noticeable lithium dendrite formation.Moreover,the PI/AO@PIS-based LiFePO4||Li full cells demonstrate outstanding rate performance(125.7 m Ah/g at 5 C)and impressive cycling stability(96.1%capacity retention at 1 C after 200 cycles).This work highlights the efficacy of enhancing the mechanical properties of polymer matrices and extending cell performance through the incorporation of a dense inorganic interface layer.展开更多
以纳米ZrO 、微米Al O 为原料,采用无压烧结方式制备了ZTA 复相陶瓷。结果表明:nano-ZrO 的 2 2 3 2加入有利于制备细晶ZTA 复相陶瓷。此外,nano-ZrO 的加入对 Al O 陶瓷的显微结构也产生影响,ZrO ...以纳米ZrO 、微米Al O 为原料,采用无压烧结方式制备了ZTA 复相陶瓷。结果表明:nano-ZrO 的 2 2 3 2加入有利于制备细晶ZTA 复相陶瓷。此外,nano-ZrO 的加入对 Al O 陶瓷的显微结构也产生影响,ZrO 颗粒以 2 2 3 2“晶内型”和晶界型两种形式存在。合理的配方组成及制备工艺有利于 Z r O 以四方亚稳相存在。Z r O 含量为 2 23 0 w t % 时,其四方相含量可达 6 9 %,有利于应力诱导相变增韧,该 Z T A 复相陶瓷的抗弯强度、断裂韧性分别达到 604MPa、6.87MPa·m1/2。展开更多
基金Supported by the National Natural Science Foundation of China under Grant Nos 61474027 and 61376008
文摘High-performance thin-film transistors （TFTs） with a low thermal budget are highly desired for flexible electronic applications. In this work, the TFTs with atomic layer deposited ZnO-channel/Al2O3-dielectric are fabricated under the maximum process temperature of 200℃. First, we investigate the effect of post-annealing environment such as N2, H2-N2 （4%） and O2 on the device performance, revealing that o2 annealing can greatly enhance the device performance. Further, we compare the influences of annealing temperature and time on the device performance. It is found that long anneMing at 200℃is equivalent to and even outperforms short annealing at 300℃. Excellent electrical characteristics of the TFTs are demonstrated after 02 anneMing at 200℃ for 35 rain, including a low off-current of 2.3 × 10-13 A, a small sub-threshold swing of 245 m V/dec, a large on/off current ratio of 7.6×10s, and a high electron effective mobility of 22.1cm2/V.s. Under negative gate bias stress at -10 V, the above devices show better electrical stabilities than those post-annealed at 300℃. Thus the fabricated high-performance ZnO TFT with a low thermal budget is very promising for flexible electronic applications.
基金the financial support from the 261Project of MIIT and Natural Science Foundation of Jiangsu Province(No.BK20240179)。
文摘The ineluctable introduction of lithium salt to polymer solid-state electrolytes incurs a compromise between strength,ionic conductivity,and thickness.Here,we propose Al_(2)O_(3)-coated polyimide(AO/PI)porous film as a high-strength substrate to support fast-ion-conducting polymer-in-salt(PIS)solid-state electrolytes,aiming to suppress lithium dendrite growth and improve full-cell performance.The Al_(2)O_(3)coating layer not only refines the wettability of polyimide porous film to PIS,but also performs as a high modulus protective layer to suppress the growth of lithium dendrites.The resulting PI/AO@PIS exhibits a small thickness of only 35μm with an outstanding tensile strength of 11.3 MPa and Young's modulus of 537.6 MPa.In addition,the PI/AO@PIS delivers a high ionic conductivity of 0.1 m S/cm at 25°C.As a result,the PI/AO@PIS enables symmetric Li cells to achieve exceptional cyclability for over 1000 h at 0.1 m A/cm2without noticeable lithium dendrite formation.Moreover,the PI/AO@PIS-based LiFePO4||Li full cells demonstrate outstanding rate performance(125.7 m Ah/g at 5 C)and impressive cycling stability(96.1%capacity retention at 1 C after 200 cycles).This work highlights the efficacy of enhancing the mechanical properties of polymer matrices and extending cell performance through the incorporation of a dense inorganic interface layer.
文摘以纳米ZrO 、微米Al O 为原料,采用无压烧结方式制备了ZTA 复相陶瓷。结果表明:nano-ZrO 的 2 2 3 2加入有利于制备细晶ZTA 复相陶瓷。此外,nano-ZrO 的加入对 Al O 陶瓷的显微结构也产生影响,ZrO 颗粒以 2 2 3 2“晶内型”和晶界型两种形式存在。合理的配方组成及制备工艺有利于 Z r O 以四方亚稳相存在。Z r O 含量为 2 23 0 w t % 时,其四方相含量可达 6 9 %,有利于应力诱导相变增韧,该 Z T A 复相陶瓷的抗弯强度、断裂韧性分别达到 604MPa、6.87MPa·m1/2。
