Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ...Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.展开更多
Ti-10V-2Fe-3Al alloy with fine-grainedβphases was fabricated by friction stir processing with opti-mized processing parameters.The superplastic behavior of the specimens was investigated by tensile deformation at dif...Ti-10V-2Fe-3Al alloy with fine-grainedβphases was fabricated by friction stir processing with opti-mized processing parameters.The superplastic behavior of the specimens was investigated by tensile deformation at different strain rates and temperatures,and an optimal superplastic elongation of 634%was achieved at 700℃ and 3×10^(-4)/s.An annealing treatment at 650℃ for 60 min showed a mi-crostructure withαprecipitates distributed in theβmatrix in the friction stir specimen.Such pre-heat treatment improves the superplasticity of the specimen,achieving an elongation of up to 807%at 750℃ and 3×10^(-4)/s.The influences of tensile temperatures and strain rates on the microstructural evolution,such as grain size variation,grain morphology,and phase transformations,were discussed.The super-plastic deformation behavior of fine-grained Ti-10V-2Fe-3Al alloy is controlled by grain boundary sliding and accompanied by dynamic phase transformation and recrystallization.展开更多
Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric fo...Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric for dynamic random access memory(DRAM)applications,offering a high dielectric constant with a remarkable leakage-lowering effect by Al acceptor doping.However,ATO fabrication via conventional supercycle-based ALD suffers from severe crystallinity loss during the growth of TiO_(2) upon Al doping owing to the dopant-induced lattice disorder.In addition,Al doping cannot reduce any inherent O vacancies(V_(O))of TiO_(2),although the original purpose of doping was to address the n-type nature caused by V_(O).To resolve these limitations,we propose a single-step,in-situ Ar/O_(2) post-doping plasma(PDP)process immediately after the Al dopant incorporation.Using the PDP process,simultaneous atomic-scale dopant migration-mediated crystallization and V_(O) annihilation were successfully initiated.Thus,the surface concentration of the dopant decreased,reducing the dopant-induced lattice distortion,while promoting the highly crystallized seed layer-like surface.Consequently,strong rutile-phase recovery was accompanied by enhanced lattice-matched growth.In addition,the PDP process significantly lowers the V_(O)-to-lattice oxygen ratio by facilitating the recombination between reactive O species and V_(O),increasing the corresponding 0.4 e V of conduction band offset(CBO).Despite the common trade-off between the dielectric constant and leakage,the Pt/PDP-ATO/Ru capacitor exhibited a simultaneous 30%increase in dielectric constant and up to a 1.6-order reduction in leakage current density.展开更多
针对装配式钢筋模板一体化(Integration of reinforcement and framework,IRF)体系采用硫铝酸盐水泥存在成本高、性能调控难度大等问题,基于最紧密堆积理论设计了满足装配式IRF体系性能要求的P·Ⅱ水泥砂浆配合比,研究了该砂浆在不...针对装配式钢筋模板一体化(Integration of reinforcement and framework,IRF)体系采用硫铝酸盐水泥存在成本高、性能调控难度大等问题,基于最紧密堆积理论设计了满足装配式IRF体系性能要求的P·Ⅱ水泥砂浆配合比,研究了该砂浆在不同CO_(2)养护温度(40℃、60℃)和养护压强(0.3、0.5、0.8 MPa)下的力学性能、水化热、水化产物和孔结构的变化规律,并与60℃、常压蒸汽养护组进行了对比。结果表明:60℃下,与蒸汽养护相比,CO_(2)养护有效促进了砂浆早期抗压强度发展,建议CO_(2)养护压强为0.5 MPa;CO_(2)养护延长了胶凝材料的水化诱导期,降低了水化放热速率峰值和24 h水化放热量;养护压强对胶凝材料水化动力学的影响不显著;用适量辅助胶凝材料替代水泥细化了硬化水泥浆体的孔结构,且碳减排效果显著。展开更多
基金funded by the research startup funding of National Research Foundation (NRF) of Korea through the Ministry of Science and ICT 2022R1G1A1009887Part of this study was supported by research start-up funding of Anhui University (S202418001/078)。
文摘Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.
基金financially supported by the National Natural Science Foundation of China(No.52105373)the China Scholarship Council(No.202106020094).
文摘Ti-10V-2Fe-3Al alloy with fine-grainedβphases was fabricated by friction stir processing with opti-mized processing parameters.The superplastic behavior of the specimens was investigated by tensile deformation at different strain rates and temperatures,and an optimal superplastic elongation of 634%was achieved at 700℃ and 3×10^(-4)/s.An annealing treatment at 650℃ for 60 min showed a mi-crostructure withαprecipitates distributed in theβmatrix in the friction stir specimen.Such pre-heat treatment improves the superplasticity of the specimen,achieving an elongation of up to 807%at 750℃ and 3×10^(-4)/s.The influences of tensile temperatures and strain rates on the microstructural evolution,such as grain size variation,grain morphology,and phase transformations,were discussed.The super-plastic deformation behavior of fine-grained Ti-10V-2Fe-3Al alloy is controlled by grain boundary sliding and accompanied by dynamic phase transformation and recrystallization.
基金supported by the Samsung Electronics Co.,Ltd.(ISO230414-05954-01)Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(NRF2021R1A6A1A03039981)+2 种基金the Korea Institute for Advancement of Technology(KIAT)Grant,funded by the Korea Government(MOTIE)(P0023703,HRD Program for Industrial Innovation)The computations were performed at the Korea Institute of Science and Technology Information(KISTI)National Supercomputing Center(KSC-2024-CRE-0316)the UNIST Supercomputing Center。
文摘Atomic layer deposition(ALD)is extensively used to fabricate doped dielectrics due to its ability to deposit conformal films with atomic-scale thickness control.Al-doped TiO_(2)(ATO)is a promising high-k dielectric for dynamic random access memory(DRAM)applications,offering a high dielectric constant with a remarkable leakage-lowering effect by Al acceptor doping.However,ATO fabrication via conventional supercycle-based ALD suffers from severe crystallinity loss during the growth of TiO_(2) upon Al doping owing to the dopant-induced lattice disorder.In addition,Al doping cannot reduce any inherent O vacancies(V_(O))of TiO_(2),although the original purpose of doping was to address the n-type nature caused by V_(O).To resolve these limitations,we propose a single-step,in-situ Ar/O_(2) post-doping plasma(PDP)process immediately after the Al dopant incorporation.Using the PDP process,simultaneous atomic-scale dopant migration-mediated crystallization and V_(O) annihilation were successfully initiated.Thus,the surface concentration of the dopant decreased,reducing the dopant-induced lattice distortion,while promoting the highly crystallized seed layer-like surface.Consequently,strong rutile-phase recovery was accompanied by enhanced lattice-matched growth.In addition,the PDP process significantly lowers the V_(O)-to-lattice oxygen ratio by facilitating the recombination between reactive O species and V_(O),increasing the corresponding 0.4 e V of conduction band offset(CBO).Despite the common trade-off between the dielectric constant and leakage,the Pt/PDP-ATO/Ru capacitor exhibited a simultaneous 30%increase in dielectric constant and up to a 1.6-order reduction in leakage current density.
文摘针对装配式钢筋模板一体化(Integration of reinforcement and framework,IRF)体系采用硫铝酸盐水泥存在成本高、性能调控难度大等问题,基于最紧密堆积理论设计了满足装配式IRF体系性能要求的P·Ⅱ水泥砂浆配合比,研究了该砂浆在不同CO_(2)养护温度(40℃、60℃)和养护压强(0.3、0.5、0.8 MPa)下的力学性能、水化热、水化产物和孔结构的变化规律,并与60℃、常压蒸汽养护组进行了对比。结果表明:60℃下,与蒸汽养护相比,CO_(2)养护有效促进了砂浆早期抗压强度发展,建议CO_(2)养护压强为0.5 MPa;CO_(2)养护延长了胶凝材料的水化诱导期,降低了水化放热速率峰值和24 h水化放热量;养护压强对胶凝材料水化动力学的影响不显著;用适量辅助胶凝材料替代水泥细化了硬化水泥浆体的孔结构,且碳减排效果显著。
