This paper presents a single chip CMOS power amplifier with neutralization capacitors for ZigbeeTM system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power ...This paper presents a single chip CMOS power amplifier with neutralization capacitors for ZigbeeTM system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power ofa PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P I dB point. The core area is 0.73 × 0.55 mm2.展开更多
文摘This paper presents a single chip CMOS power amplifier with neutralization capacitors for ZigbeeTM system according to IEEE 802.15.4. A novel structure with digital interface is adopted, which allows the output power ofa PA to be controlled by baseband signal directly, so there is no need for DAC. The neutralization capacitors will increase reverse isolation. The chip is implemented in SMIC 0.18 μm CMOS technology. Measurement shows that the proposed power amplifier has a 13.5 dB power gain, 3.48 dBm output power and 35.1% PAE at P I dB point. The core area is 0.73 × 0.55 mm2.
