Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet response.In order to obtain photodet...Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet response.In order to obtain photodetectors(PDs)with superior response,higher demands are placed on the quality of growth and processing of doped films.In this work,Zn-doped ternary metal oxide ZnGaO(ZGO)thin films were grown using the atomic layer deposition technique and annealed at different temperatures under an oxy-gen atmosphere.The results showed that the high-quality ZGO films with good uniformity,high visible light transmittance,low roughness,and significant reduction of oxygen vacancies were obtained after an-nealing.Subsequently,metal-semiconductor-metal PDs were prepared based on the studied ZGO films.The responsivity(R),detectivity(D^(∗)),and external quantum efficiency(EQE)of the optimized device are 61.8 A W^(-1),1.2×10^(12) Jones,and 255.9%,respectively.Compared to the unannealed device,the an-nealed ZGO PD achieves a maximum 309-fold increase in responsivity.This thermal engineering work may provide a strong reference for the development of low-cost,large-area,high-performance ultraviolet detection.And it also broadens the application of ternary metal oxides in optoelectronics.展开更多
基金supported by the National Natural Science Foundation of China(Nos.62027818,61874034,11974320)the National Key R&D Program of China(No.2021YFB3202500)+1 种基金the Key R&D Program of Shanxi Province(No.202102030201008)the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300).
文摘Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet response.In order to obtain photodetectors(PDs)with superior response,higher demands are placed on the quality of growth and processing of doped films.In this work,Zn-doped ternary metal oxide ZnGaO(ZGO)thin films were grown using the atomic layer deposition technique and annealed at different temperatures under an oxy-gen atmosphere.The results showed that the high-quality ZGO films with good uniformity,high visible light transmittance,low roughness,and significant reduction of oxygen vacancies were obtained after an-nealing.Subsequently,metal-semiconductor-metal PDs were prepared based on the studied ZGO films.The responsivity(R),detectivity(D^(∗)),and external quantum efficiency(EQE)of the optimized device are 61.8 A W^(-1),1.2×10^(12) Jones,and 255.9%,respectively.Compared to the unannealed device,the an-nealed ZGO PD achieves a maximum 309-fold increase in responsivity.This thermal engineering work may provide a strong reference for the development of low-cost,large-area,high-performance ultraviolet detection.And it also broadens the application of ternary metal oxides in optoelectronics.
