A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser i...A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 3 05ps at 1 044μm.The pulse frequency is 375MHz;the output power is 45mW.展开更多
Crystal growth and optical properties of YbxY1 - xAl(BO3)(4)(abbreviated as Yb:YAB) are reported. Experimental results indicate that K2Mo3O10 is the most favorable flux for the growth of Yb:YAB. Based on the measured ...Crystal growth and optical properties of YbxY1 - xAl(BO3)(4)(abbreviated as Yb:YAB) are reported. Experimental results indicate that K2Mo3O10 is the most favorable flux for the growth of Yb:YAB. Based on the measured refractive indices, type I phase matching angle is calculated as theta (m) ( I ) = 34 degrees 12', which agrees well with the experimental result, theta (m) ( I ) = 34 degrees 38'. In the absorption spectra of this crystal, there exist two absorption bands located at 956 and 975 nm, respectively, which are suitable for InGaAs diode laser pumping, pi polarized absorption is slightly stronger than sigma polarized absorption at room temperature. In the fluorescence spectra, there are two fluorescence peaks located at 1.03 and 1.04 mu m respectively. The fluorescence lifetime at 1.03 mu m is 1.379 ms. The estimated emission cross section is in the magnitude of 10(-21) cm(2).展开更多
文摘A novel high reflectivity type of semiconductor saturable absorption mirror grown by metal organic chemical vapor deposition is presented.Using the mirror as well as an end mirror,passively mode locked Yb∶YAB laser is realized,which produces a pulse as short as 3 05ps at 1 044μm.The pulse frequency is 375MHz;the output power is 45mW.
文摘Crystal growth and optical properties of YbxY1 - xAl(BO3)(4)(abbreviated as Yb:YAB) are reported. Experimental results indicate that K2Mo3O10 is the most favorable flux for the growth of Yb:YAB. Based on the measured refractive indices, type I phase matching angle is calculated as theta (m) ( I ) = 34 degrees 12', which agrees well with the experimental result, theta (m) ( I ) = 34 degrees 38'. In the absorption spectra of this crystal, there exist two absorption bands located at 956 and 975 nm, respectively, which are suitable for InGaAs diode laser pumping, pi polarized absorption is slightly stronger than sigma polarized absorption at room temperature. In the fluorescence spectra, there are two fluorescence peaks located at 1.03 and 1.04 mu m respectively. The fluorescence lifetime at 1.03 mu m is 1.379 ms. The estimated emission cross section is in the magnitude of 10(-21) cm(2).
