近几年来,SOI(silicon on Insulator)材料因用于制备抗辐照、高速CMOS电路及三维集成电路等受到人们越来越多的关注。在各种SOI技术中,离子注入形成SOI材料有其独到的优点,制备工艺简单方便,可获得高质量的表层单晶硅。本文以XTEM研究...近几年来,SOI(silicon on Insulator)材料因用于制备抗辐照、高速CMOS电路及三维集成电路等受到人们越来越多的关注。在各种SOI技术中,离子注入形成SOI材料有其独到的优点,制备工艺简单方便,可获得高质量的表层单晶硅。本文以XTEM研究大束流,高剂量的氮离子或氧离子注入单晶硅形成的SOI材料,用于确定表面层硅的辐照损伤和氮化硅或氧化硅埋层剖面的显微结构。注N^+SOI试样的制备,采用Φ50毫米的硅晶片(n型、3～6Ωcm,<110>)注入能量为190kev,剂量为1.8×10_1^(18)N^+/厘米~2,N^+束流密度为50微安/厘米~2.展开更多
In this paper, the cross sectional microstructure and crystal structure of ion plated multi layer films of stainless steel (1Cr18Ni9Ti ) were studied by cross sectional transmission electron microscopy (XTEM). The re...In this paper, the cross sectional microstructure and crystal structure of ion plated multi layer films of stainless steel (1Cr18Ni9Ti ) were studied by cross sectional transmission electron microscopy (XTEM). The results show that ion plated stainless steel multi layer films are fine grained double phase steel films of austenites and ferrites.Cross section film growing microstructures can be divided into three zones: fine equiaxed crystals, fine columnar crystals and coarse columnar crystals. Interfaces in multi layer films can promote fine grained growing and interrupt columnar grained growing,and improve properties of film materials.展开更多
成功制备了多弧离子镀 Ti Al N/Ti多元复合涂层的截面透射试样 ,并分别用 TEM和 EDS等手段研究了涂层的组织结构和界面结构。结果表明 ,多晶 (Ti,Al) N相是 Ti Al N的主要组成相 ,过渡 Ti层呈现多晶 α- Ti结构。研究发现 ,在 Ti Al N-...成功制备了多弧离子镀 Ti Al N/Ti多元复合涂层的截面透射试样 ,并分别用 TEM和 EDS等手段研究了涂层的组织结构和界面结构。结果表明 ,多晶 (Ti,Al) N相是 Ti Al N的主要组成相 ,过渡 Ti层呈现多晶 α- Ti结构。研究发现 ,在 Ti Al N- Ti过渡层界面、Ti过渡层 - HSS基体界面分别存在一个薄的中间层 ,通过衍射和 EDS分析认为前者是 Ti2 Al N相 ,而后者则是 Fe Ti界面相 ,用 XTEM还观察到 Fe Ti相与基体展开更多
A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microsco...A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.展开更多
文摘近几年来,SOI(silicon on Insulator)材料因用于制备抗辐照、高速CMOS电路及三维集成电路等受到人们越来越多的关注。在各种SOI技术中,离子注入形成SOI材料有其独到的优点,制备工艺简单方便,可获得高质量的表层单晶硅。本文以XTEM研究大束流,高剂量的氮离子或氧离子注入单晶硅形成的SOI材料,用于确定表面层硅的辐照损伤和氮化硅或氧化硅埋层剖面的显微结构。注N^+SOI试样的制备,采用Φ50毫米的硅晶片(n型、3～6Ωcm,<110>)注入能量为190kev,剂量为1.8×10_1^(18)N^+/厘米~2,N^+束流密度为50微安/厘米~2.
文摘In this paper, the cross sectional microstructure and crystal structure of ion plated multi layer films of stainless steel (1Cr18Ni9Ti ) were studied by cross sectional transmission electron microscopy (XTEM). The results show that ion plated stainless steel multi layer films are fine grained double phase steel films of austenites and ferrites.Cross section film growing microstructures can be divided into three zones: fine equiaxed crystals, fine columnar crystals and coarse columnar crystals. Interfaces in multi layer films can promote fine grained growing and interrupt columnar grained growing,and improve properties of film materials.
文摘成功制备了多弧离子镀 Ti Al N/Ti多元复合涂层的截面透射试样 ,并分别用 TEM和 EDS等手段研究了涂层的组织结构和界面结构。结果表明 ,多晶 (Ti,Al) N相是 Ti Al N的主要组成相 ,过渡 Ti层呈现多晶 α- Ti结构。研究发现 ,在 Ti Al N- Ti过渡层界面、Ti过渡层 - HSS基体界面分别存在一个薄的中间层 ,通过衍射和 EDS分析认为前者是 Ti2 Al N相 ,而后者则是 Fe Ti界面相 ,用 XTEM还观察到 Fe Ti相与基体
基金Supported by the National Natural Science Foundation of China(No.69906005)and the Shanghai Youth Foundation(No.01 QMH1403)
文摘A SOI material with thick BOX (2.2 μm) was successfully fabricated using the Smart-cut technology. The thick BOX SOI microstructures were investigated by high resolution cross-sectional transmission electron microscopy (XTEM), while the electrical properties were studied by the spreading resistance profile (SRP). Experimental results demonstrate that both structural and electrical properties of the SOI structure are very good.
