The secondary electrons spectrum in XPS can be used to determine the work function of polyaniline (PANI). It is shown that the work function of PANI depends on the protonation state and the polymerization method used.
Necessity of XPS spectrum deconvolution, disadvantages of the traditional Fast Fourier Transform decon-volution method (FFT) , principle, method and advantages of Maximum Entropy Deconvolution Method (MEM) are de-scri...Necessity of XPS spectrum deconvolution, disadvantages of the traditional Fast Fourier Transform decon-volution method (FFT) , principle, method and advantages of Maximum Entropy Deconvolution Method (MEM) are de-scribed. Criteria for determing the number of data points sam-pled in MEM are the main point disccussed in the paper,some XPS deconvolution applications of our MEM software show that the MEM makes XPS deconvolution much easier than the traditional FFT method.展开更多
The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance (EPR) technique, an investigation of the effect of dopant type a...The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance (EPR) technique, an investigation of the effect of dopant type and concentration on EPR signal variations was carried out by using p-type and n-type silicon(111) wafers with concentration of 1×1015 cm 3 and 1×1017 cm 3, and the changes of intensity of defect paramagnetic centers before and after irradiation of electrons were compared. The chemical states of Si-SiO2 structure were determined by X-ray photoelectrons spectroscopy(XPS). The results clearly indicate that the effects of dopant variations (type and concentration) are of obvious difference. Compared with p-type silicon, n-type silicon, especially with higher dopant concentration, tends to produce defect at the interface under low-energy electron irradiation with certain flux, which arises from the hole trapped on a nonbridging oxygen atom bonded to P. It is represented in the form of distinct changes of POHC intensity and P2P spectrum. According to the theoretical and experimental data, the relationship among electron energy deposition, chemical states of element Si at SiO2 -Si(111) interface, and radiation effect were analyzed and discussed.展开更多
In this paper, we show how Operating Deflection Shapes (ODS’s) andmode shapes can be obtained experimentally from measurements thatare made using only two sensors and two short wires to connect them to amulti-channel...In this paper, we show how Operating Deflection Shapes (ODS’s) andmode shapes can be obtained experimentally from measurements thatare made using only two sensors and two short wires to connect them to amulti-channel acquisition system. This new test procedure is depicted inFigure 1. Not only is the equipment required to do a test much more costeffective, but this method can be used to test any sized test article, especiallylarge ones.展开更多
文摘The secondary electrons spectrum in XPS can be used to determine the work function of polyaniline (PANI). It is shown that the work function of PANI depends on the protonation state and the polymerization method used.
文摘Necessity of XPS spectrum deconvolution, disadvantages of the traditional Fast Fourier Transform decon-volution method (FFT) , principle, method and advantages of Maximum Entropy Deconvolution Method (MEM) are de-scribed. Criteria for determing the number of data points sam-pled in MEM are the main point disccussed in the paper,some XPS deconvolution applications of our MEM software show that the MEM makes XPS deconvolution much easier than the traditional FFT method.
基金supported by Major Foundation for Development of Science and Technology of China Academy of Engineering Physics (No. 2007A02001)
文摘The energy deposition for low-energy electron beam on Si-SiO2 models was calculated by Monte-Carlo method. Making use of electron paramagnetic resonance (EPR) technique, an investigation of the effect of dopant type and concentration on EPR signal variations was carried out by using p-type and n-type silicon(111) wafers with concentration of 1×1015 cm 3 and 1×1017 cm 3, and the changes of intensity of defect paramagnetic centers before and after irradiation of electrons were compared. The chemical states of Si-SiO2 structure were determined by X-ray photoelectrons spectroscopy(XPS). The results clearly indicate that the effects of dopant variations (type and concentration) are of obvious difference. Compared with p-type silicon, n-type silicon, especially with higher dopant concentration, tends to produce defect at the interface under low-energy electron irradiation with certain flux, which arises from the hole trapped on a nonbridging oxygen atom bonded to P. It is represented in the form of distinct changes of POHC intensity and P2P spectrum. According to the theoretical and experimental data, the relationship among electron energy deposition, chemical states of element Si at SiO2 -Si(111) interface, and radiation effect were analyzed and discussed.
文摘In this paper, we show how Operating Deflection Shapes (ODS’s) andmode shapes can be obtained experimentally from measurements thatare made using only two sensors and two short wires to connect them to amulti-channel acquisition system. This new test procedure is depicted inFigure 1. Not only is the equipment required to do a test much more costeffective, but this method can be used to test any sized test article, especiallylarge ones.
