Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential f...Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy.The angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.展开更多
基于人眼视觉感知特性,提出了一种新型的边缘检测和XOR编码相结合的图像自适应隐写算法。通过设计基于灰狼优化(grey wolf optimization,GWO)算法的边缘检测,根据秘密信息的大小自适应地调整边缘检测阈值,利用粒子群优化(particle swarm...基于人眼视觉感知特性,提出了一种新型的边缘检测和XOR编码相结合的图像自适应隐写算法。通过设计基于灰狼优化(grey wolf optimization,GWO)算法的边缘检测,根据秘密信息的大小自适应地调整边缘检测阈值,利用粒子群优化(particle swarm optimization,PSO)算法优化边缘和非边缘像素的嵌入位数,结合XOR编码实现对混沌加密后的秘密信息的嵌入。实验结果表明,该隐写算法比现有文献算法具有更大的隐写容量,能较好地保持载密图像的不可感知性,并已通过像素差值直方图(pixel difference histogram,PDH)安全性分析。展开更多
基金financially supported by the Chinese Academy of Sciences (Nos.XDA18000000 and Y201926)the Youth Innovation Promotion Association of CAS (No.2020118)+1 种基金Beijing Municipal Natural Science Foundation (No.4244071)the Funding Support from Research Grants Council—Early Career Scheme (No.26200520)。
文摘Spin logics have emerged as a promising avenue for the development of logic-in-memory architectures.In particular,the realization of XOR spin logic gates using a single spin-orbit torque device shows great potential for low-power stateful logic circuits in the next generation.In this study,we successfully obtained the XOR logic gate by utilizing a spin-orbit torque device with a lateral interface,which was created by local ion implantation in the Ta/Pt/Co/Ta Hall device exhibiting perpendicular magnetic anisotropy.The angle of the lateral interface is set at 45°relative to the current direction,leading to the competition between symmetry breaking and current-driven Néel-type domain wall motion.Consequently,the field-free magnetic switching reversed is realized by the same sign of current amplitude at this interface.Based on this field-free magnetic switching behavior,we successfully proposed an XOR logic gate that could be implemented using only a single spin-orbit torque Hall device.This study provides a potentially viable approach toward efficient spin logics and in-memory computing architectures.
