Roman scattering measurement of （ 1 - x ） GeS2-x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3 . According to the change of Raman spectra with t...Roman scattering measurement of （ 1 - x ） GeS2-x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3 . According to the change of Raman spectra with the addition of Ga2S3, two main structural transformations were deduced ： the gradual enhancement of ethane- like structural units S3 Ge- GeS3 （ 250 cm ^- 1） and S3 Ga- GaS3 （270 cm ^- 1 ） and the appearance of charge imbalanced units [ Ga2 S2 （ S1/2 ）4 ]^2- and [Ga（ S1/2 ）4 ]^- . And this change of structural aspect seems to give as a clue to understanding the cause of the increased rare-earth solubility.展开更多
The effects of different x values on the dielectric properties in the Ba6-3xSm8+2xTi18O54 microwave dielectric ceramics(0.3≤x≤0.7) were studied. The results showed that the major crystal phase was BaSm2Ti4O12 and th...The effects of different x values on the dielectric properties in the Ba6-3xSm8+2xTi18O54 microwave dielectric ceramics(0.3≤x≤0.7) were studied. The results showed that the major crystal phase was BaSm2Ti4O12 and the sintering temperature of the ceramics was 1340 ℃ when the x value was 0.67. The dielectric properties were better: εr≈79, tanδ≈1×10-4(1 MHz); εr≈80, Q·f=9230 GHz(3.97 GHz), τf=-17 ppm·℃-1.展开更多
文摘Roman scattering measurement of （ 1 - x ） GeS2-x Ga2S3 system glasses was conducted in order to understand the microstructural change caused by the addition of Ga2S3 . According to the change of Raman spectra with the addition of Ga2S3, two main structural transformations were deduced ： the gradual enhancement of ethane- like structural units S3 Ge- GeS3 （ 250 cm ^- 1） and S3 Ga- GaS3 （270 cm ^- 1 ） and the appearance of charge imbalanced units [ Ga2 S2 （ S1/2 ）4 ]^2- and [Ga（ S1/2 ）4 ]^- . And this change of structural aspect seems to give as a clue to understanding the cause of the increased rare-earth solubility.
文摘The effects of different x values on the dielectric properties in the Ba6-3xSm8+2xTi18O54 microwave dielectric ceramics(0.3≤x≤0.7) were studied. The results showed that the major crystal phase was BaSm2Ti4O12 and the sintering temperature of the ceramics was 1340 ℃ when the x value was 0.67. The dielectric properties were better: εr≈79, tanδ≈1×10-4(1 MHz); εr≈80, Q·f=9230 GHz(3.97 GHz), τf=-17 ppm·℃-1.
