The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the...The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition （ALD） and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide （Al2O3） is used to fabricate the nanostep. There are three steps of Al2O3 in this structure including 8 nm, 18 nm and 44 inn. The thickness of Al2O3 film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al2O3 film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikaliseh-Technische Bundesanstalt （PTB） and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references.展开更多
Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of th...Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.展开更多
The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solu...The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.展开更多
Diamond films have great potential for micro-electro-mechanical system（MEMS） application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facil...Diamond films have great potential for micro-electro-mechanical system（MEMS） application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facile methods will be demonstrated for smart patterning of diamond films,in which two etching techniques,i.e.,plasma dry etching and chemical wet etching（including isotropic-etching and anisotropic-etching） have been developed for obtaining diamond microstructures with different morphology demands.Free-standing diamond micro-gears and micro-combs were achieved as examples by using the experimental procedures.It is confirmed that as-designed diamond structures with a straight side wall and a distinct boundary can be fabricated effectively and efficiently by using such methods.展开更多
Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrat...Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrate and Si sub-strate are prepared.It is found that the performance of sapphire substrate device is better than that of silicon substrate.Comparing these two devices,the maximum drain current of sapphire substrate device(401 mA/mm)is 1.76 times that of silicon substrate device(228 mA/mm),and the field-effect mobility(μ_(FEmax))of sapphire substrate device(176 cm^(2)/V·s)is 1.83 times that of silicon substrate device(96 cm^(2)/V·s).The conductive resistance of silicon substrate device is 21.2Ω-mm,while that of sapphire substrate device is only 15.2Ω·mm,which is 61%that of silicon substrate device.The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al_(2)O_(3)/GaN interface.Experimental studies show that(i)interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device,(ii)Both the border traps in Al_(2)O_(3) dielectric near Al_(2)O_(3)/GaN and the interface traps in Al_(2)O_(3)/GaN interface have a significantly effect on device channel mobility,and(iii)the properties of gallium nitride materials on different substrates are different due to wet etching.The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.展开更多
We present large-scale molecular dynamics(MD)simulations based on a neural network potential(NNP)to investigate alkaline wet etching of GaN,a process critical to nitride-based semiconductor fabrication.A Behler–Parri...We present large-scale molecular dynamics(MD)simulations based on a neural network potential(NNP)to investigate alkaline wet etching of GaN,a process critical to nitride-based semiconductor fabrication.A Behler–Parrinello-type NNP is trained on extensive DFT datasets to capture chemical reactions between GaN and KOH.Using temperature-accelerated dynamics,our NNP-MD simulations accurately reproduce experimentally observed structural modifications of GaN nanorods during etching.The etching simulations reveal surface-specific morphological evolution:pyramidal pits on the−c plane,truncated pyramids on the+c plane,and planar morphologies on non-polar m and a surfaces.We also identify key chemical reactions governing the etching mechanisms.Enhanced-sampling simulations provide free-energy profiles for Ga dissolution,which critically influences the etching rate.The−c,a,and m planes exhibit moderate activation barriers,confirming their etchability,while the+c surface shows a significantly higher barrier,indicating strong resistance.Wealso observe the formation of Ga-O-Ga bridges on etched surfaces,which may act as carrier traps.This work provides atomistic insights into the mechanisms and kinetics of GaN wet etching,offering guidance for the fabrication of nanostructures in advanced GaN-based electronic and display applications.展开更多
A 3-dB paired interference （PI） optical coupler in silicon-on-insulator （SOI） based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation me...A 3-dB paired interference （PI） optical coupler in silicon-on-insulator （SOI） based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method （FD-BPM） and fabricated by potassium hydroxide （KOH） anisotropic chemical wet etching. Theoretically, tolerances of width, length, and port distance are more than 1, 100, and 1 μm, respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55 μm. The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB.展开更多
The wet etching properties ofa HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based sol...The wet etching properties ofa HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900℃ for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of SiN bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.展开更多
A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation f ollowed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxid...A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation f ollowed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700℃could be etched off in a homothermal（70℃） KOH solution while the KOH solution had no etching effects on the region of the AlGaN/GaN heterostructure protected by a SiO_2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900℃followed by 30 min treatment in 70℃KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed.展开更多
Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparat...Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution （HC1/H3PO4）, and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system （ICP）. The results show that the wet etching （HCl-based） offers low cost and approximately vertical sidewall, whilst ICP system （C12-based） offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of 0.6 p.m/min and 1.2 pm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.展开更多
Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH...Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH at temperatures in the range of 90～300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH based solutions produce rectangular pits rather than square pits.The etch pits elongate in 1 0] direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers. direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers.展开更多
The surface of a commercial Y3Al5O12：Ce^3＋ phosphor was modified by 99% NH_4F＋CH_3COOH solution in a supersonic bath with water temperature of 80 oC for 4 h. The scanning electron microscopy（SEM） results showed t...The surface of a commercial Y3Al5O12：Ce^3＋ phosphor was modified by 99% NH_4F＋CH_3COOH solution in a supersonic bath with water temperature of 80 oC for 4 h. The scanning electron microscopy（SEM） results showed that the edge angles were not as sharp as the unmodified particles and the flat surfaces turned rough with many micro-structures covered. Positron lifetime measurements quantitatively showed that surface defects were removed away by more than 50%. As a result, the photoluminescence determinations showed that the backscatter loss was reduced by 4.2% and the emission power was enhanced by 5.6% after the surface modification. The conversion efficiency was greatly improved from 47.3% to 51.1%, as presented by the fluorescence images. Therefore, it would be greatly helpful for the improvement of efficiency, transparency and stability of pc-LED. Moreover, this method was significantly suitable for mass production due to its easy operation and low cost.展开更多
Quartz crystals are the most widely used material in resonant sensors,owing to their excellent piezoelectric and mechanical properties.With the development of portable and wearable devices,higher processing efficiency...Quartz crystals are the most widely used material in resonant sensors,owing to their excellent piezoelectric and mechanical properties.With the development of portable and wearable devices,higher processing efficiency and geometrical precision are required.Wet etching has been proven to be the most efficient etching method for large-scale production of quartz devices,and many wet etching approaches have been developed over the years.However,until now,there has been no systematic review of quartz crystal etching in liquid phase environments.Therefore,this article provides a comprehensive review of the development of wet etching processes and the achievements of the latest research in thisfield,covering conventional wet etching,additive etching,laser-induced backside wet etching,electrochemical etching,and electrochemical discharge machining.For each technique,a brief overview of its characteristics is provided,associated problems are described,and possible solutions are discussed.This review should provide an essential reference and guidance for the future development of processing strategies for the manufacture of quartz crystal devices.展开更多
This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a patte...This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.展开更多
Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This ...Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.展开更多
Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes （VLEDs）. The electrical characteristics of VLEDs with n-type contacts on a roughened an...Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes （VLEDs）. The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.展开更多
A new hybrid method, which combines improved glass-blown technology with wet etching, is reported to fabricate micro wine-glass resonators with high-quality fused silica. The optimum placement is compared to achieve t...A new hybrid method, which combines improved glass-blown technology with wet etching, is reported to fabricate micro wine-glass resonators with high-quality fused silica. The optimum placement is compared to achieve the resonators with good shell shape. The typical shell diameter is about 4 mm and its thickness covers from dozens to hundreds of micrometers. The etching rates in corrosion solutions with different ratios and at different thicknesses of hemispherical shells are studied. We also conclude how to precisely control the thickness.The corrosion solutions with different ratios of HF solution to NH4 F solution make the spherical shells rougher in different degrees. The best roughness is 0.581 nm in the 1 : 8 ratio corrosion solution while the original roughness is 0.537 nm. This fact shows that the resonator remains atomically smooth surface. Based on the glassblowing spherical fused silica structure, the thickness of the resonator is effectively controlled by buffered oxide etch(BOE)technology according to the measured etching rate. The measured resonant frequency of the hemispherical shell at ambient pressure and room temperature is 1.75 k Hz of rocking mode which is close to the simulated frequency.Using such a low-cost hybrid approach, we can fabricate high-quality microscale resonators in batch.展开更多
The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching...The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching solutions simultaneously corroding InGaP and A1GalnP layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.展开更多
Theoretical studies show that a Hertzian-conical crack can be considered to be composed of double cone faces for simplicity. In the present study, the three-dimensional finite-difference time-domain method is employed...Theoretical studies show that a Hertzian-conical crack can be considered to be composed of double cone faces for simplicity. In the present study, the three-dimensional finite-difference time-domain method is employed to quantify the electric-field distribution within the subsurface in the presence of such a defect under normal incidence irradiation. Both impurities （inside the crack） and the chemical etching have been investigated. The results show that the maximum electric field amplitude │E│max is 9.57374 V/m when the relative dielectric constant of transparent impurity equals 8.5. And the near-field modulation will be improved if the crack is filled with the remainder polishing powders or water vapor/drops. Meanwhile, the laser-induced initial damage moves to the glass-air surface. In the etched section, the magnitude of intensification is strongly dependent on the inclination angle θ. There will be a highest modulation when θ is around π/6, and the maximum value of IEImax is 18.57314 V/m. When θ ranges from π/θ to π/4, the light intensity enhancement factor can easily be larger than 100, and the modulation follows a decreasing trend. On the other hand, the modulation curves become smooth when θ〉π/4 or θ 〈 π/8.展开更多
In this work,we have developed a new method for manipulating and transferring up to 5 mm×10 mm epitaxial oxide thin films.The method involves fixing a PET frame onto a PMMA attachment film,enabling transfer of ep...In this work,we have developed a new method for manipulating and transferring up to 5 mm×10 mm epitaxial oxide thin films.The method involves fixing a PET frame onto a PMMA attachment film,enabling transfer of epitaxial films lifted-off by wet chemical etching of a Sr3Al2O6 sacrificial layer.The crystallinity,surface morphology,continuity,and purity of the films are all preserved in the transfer process.We demonstrate the applicability of our method for three different film compositions and structures of thickness~100 nm.Furthermore,we show that by using epitaxial nanocomposite films,lift-off yield is improved by~50% compared to plain epitaxial films and we ascribe this effect to the higher fracture toughness of the composites.This work shows important steps towards large-scale perovskite thin-film-based electronic device applications.展开更多
基金Supported by National Natural Science Foundation of China(Grant No.51175418)Major Research Program on Nanomanufacturing of National Natural Science Foundation of China(Grant No.91323303)+1 种基金Fund of the State Key Laboratory of Precision Measuring Technology and Instruments(Tianjin University and Tsinghua University)of China(Grant No.PIL1403)Collaborative Innovation Center of Suzhou Nano Science and Technology of China
文摘The current techniques used for the fabrication of nanosteps are normally done by layer growth and then ion beam thinning. There are also extra films grown on the step surfaces in order to reduce the roughness. So the whole process is time consuming. In this paper, a nanoscale step height structure is fabricated by atomic layer deposition （ALD） and wet etching techniques. According to the traceable of the step height value, the fabrication process is controllable. Because ALD technology can grow a variety of materials, aluminum oxide （Al2O3） is used to fabricate the nanostep. There are three steps of Al2O3 in this structure including 8 nm, 18 nm and 44 inn. The thickness of Al2O3 film and the height of the step are measured by anellipsometer. The experimental results show that the thickness of Al2O3 film is consistent with the height of the step. The height of the step is measured by AFM. The measurement results show that the height is related to the number of cycles of ALD and the wet etching time. The bottom and the sidewall surface roughness are related to the wet etching time. The step height is calibrated by Physikaliseh-Technische Bundesanstalt （PTB） and the results were 7.5±1.5 nm, 15.5±2.0 nm and 41.8±2.1 nm, respectively. This research provides a method for the fabrication of step height at nanoscale and the nanostep fabricated is potential used for standard references.
基金Project supported by the National Natural Science Foundation of China(Grant No.61204006)the Fundamental Research Funds for the Central Universities,China(Grant No.K50511250002)the National Key Science & Technology Special Project,China(Grant No.2008ZX01002-002)
文摘Nonpolar （1120） GaN films are grown on the etched a-plane GaN substrates via metalorganic vapor phase epitaxy. High-resolution X-ray diffraction analysis shows great decreases in the full width at half maximum of the samples grown on etched substrates compared with those of the sample without etching, both on-axis and off-axis, indicating the reduced dislocation densities and improved crystalline quality of these samples. The spatial mapping of the E2 （high） phonon mode demonstrates the smaller line width with a black background in the wing region, which testifies the reduced dislocation densities and enhanced crystalline quality of the epitaxial lateral overgrowth areas. Raman scattering spectra of the E2 （high） peaks exhibit in-plane compressive stress for all the overgrowth samples, and the E2 （high） peaks of samples grown on etched substrates shift toward the lower frequency range, indicating the relaxations of in-plane stress in these GaN films. Furthermore, room temperature photoluminescence measurement demonstrates a significant decrease in the yellow-band emission intensity of a-plane GaN grown on etched templates, which also illustrates the better optical properties of these samples.
基金supported by the National Basic Research Program of China(Grant Nos.2018YFA0209102 and 2019YFA070104)the National Natural Science Foundation of China(Grant Nos.61790581 and 61274013)the Key Research Program of the Chinese Academy of Sciences(Grant No.XDPB22)。
文摘The etching and passivation processes of very long wavelength infrared(VLWIR)detector based on the InAs/GaSb/AlSb type-II superlattice have been studied.By studying the effect of each component in the citric acid solution(citric acid,phosphoric acid,hydrogen peroxide,deionized water),the best solution ratio is obtained.After comparing different passivation materials such as sulfide+SiO_(2),Al_(2)O_(3),Si_(3)N_(4) and SU8,it is found that SU8 passivation can reduce the dark current of the device to a greater degree.Combining this wet etching and SU8 passivation,the of VLWIR detector with a mesa diameter of 500μm is about 3.6Ω·cm^(2) at 77 K.
基金supported by National Natural Science Foundation of China(No.60908023)the Open Project of State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials of China(No.Ilzxfkl9)
文摘Diamond films have great potential for micro-electro-mechanical system（MEMS） application.For device realization,precise patterning of diamond films at micrometer scale is indispensable.In this paper,simple and facile methods will be demonstrated for smart patterning of diamond films,in which two etching techniques,i.e.,plasma dry etching and chemical wet etching（including isotropic-etching and anisotropic-etching） have been developed for obtaining diamond microstructures with different morphology demands.Free-standing diamond micro-gears and micro-combs were achieved as examples by using the experimental procedures.It is confirmed that as-designed diamond structures with a straight side wall and a distinct boundary can be fabricated effectively and efficiently by using such methods.
基金Project supported by the Research on Key Techniques in Reliability of Low Power Sensor Chip for IOTIPS and the Technology Project of Headquarters,State Grid Corporation of China(Grant No.5700-202041397A-0-0-00).
文摘Based on the self-terminating thermal oxidation-assisted wet etching technique,two kinds of enhancement mode Al_(2)O_(3)/GaN MOSFETs(metal-oxide-semiconductor field-effect transistors)separately with sapphire substrate and Si sub-strate are prepared.It is found that the performance of sapphire substrate device is better than that of silicon substrate.Comparing these two devices,the maximum drain current of sapphire substrate device(401 mA/mm)is 1.76 times that of silicon substrate device(228 mA/mm),and the field-effect mobility(μ_(FEmax))of sapphire substrate device(176 cm^(2)/V·s)is 1.83 times that of silicon substrate device(96 cm^(2)/V·s).The conductive resistance of silicon substrate device is 21.2Ω-mm,while that of sapphire substrate device is only 15.2Ω·mm,which is 61%that of silicon substrate device.The significant difference in performance between sapphire substrate and Si substrate is related to the differences in interface and border trap near Al_(2)O_(3)/GaN interface.Experimental studies show that(i)interface/border trap density in the sapphire substrate device is one order of magnitude lower than in the Si substrate device,(ii)Both the border traps in Al_(2)O_(3) dielectric near Al_(2)O_(3)/GaN and the interface traps in Al_(2)O_(3)/GaN interface have a significantly effect on device channel mobility,and(iii)the properties of gallium nitride materials on different substrates are different due to wet etching.The research results in this work provide a reference for further optimizing the performances of silicon substrate devices.
基金supported by Samsung Electronics Co., Ltd (IO201214-08143-01)the Nano & Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by Ministry of Science and ICT (RS-2024-00407995). We are grateful to Jisu Jung for the technical discussion.
文摘We present large-scale molecular dynamics(MD)simulations based on a neural network potential(NNP)to investigate alkaline wet etching of GaN,a process critical to nitride-based semiconductor fabrication.A Behler–Parrinello-type NNP is trained on extensive DFT datasets to capture chemical reactions between GaN and KOH.Using temperature-accelerated dynamics,our NNP-MD simulations accurately reproduce experimentally observed structural modifications of GaN nanorods during etching.The etching simulations reveal surface-specific morphological evolution:pyramidal pits on the−c plane,truncated pyramids on the+c plane,and planar morphologies on non-polar m and a surfaces.We also identify key chemical reactions governing the etching mechanisms.Enhanced-sampling simulations provide free-energy profiles for Ga dissolution,which critically influences the etching rate.The−c,a,and m planes exhibit moderate activation barriers,confirming their etchability,while the+c surface shows a significantly higher barrier,indicating strong resistance.Wealso observe the formation of Ga-O-Ga bridges on etched surfaces,which may act as carrier traps.This work provides atomistic insights into the mechanisms and kinetics of GaN wet etching,offering guidance for the fabrication of nanostructures in advanced GaN-based electronic and display applications.
基金This work was supported in part by the National Natural Science Foundation of China (No.60336010)the"973"Plan of China (No.G2000-03-66) the"863"Program of China (No.2002AA312060).
文摘A 3-dB paired interference （PI） optical coupler in silicon-on-insulator （SOI） based on rib waveguides with trapezoidal cross section was designed with simulation by a modified finite-difference beam propagation method （FD-BPM） and fabricated by potassium hydroxide （KOH） anisotropic chemical wet etching. Theoretically, tolerances of width, length, and port distance are more than 1, 100, and 1 μm, respectively. Smooth interface was obtained with the propagation loss of 1.1 dB/cm at the wavelength of 1.55 μm. The coupler has a good uniformity of 0.2 dB and low excess loss of less than 2 dB.
基金supported by the Special Funds for Major State Basic Research Projects(No.2006CB302704)the National Natural Science Foundation of China(No.60776030).
文摘The wet etching properties ofa HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900℃ for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of SiN bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.
基金supported by the National Natural Science Foundation of China(Nos.60406004,60890193,60736033)the National Key Micrometer/Nanometer Processing Laboratory,China
文摘A novel wet etching method for AlGaN/GaN heterojunction structures is proposed using thermal oxidation f ollowed by wet etching in KOH solution.It is found that an AlGaN/GaN heterostructure after high temperature oxidation above 700℃could be etched off in a homothermal（70℃） KOH solution while the KOH solution had no etching effects on the region of the AlGaN/GaN heterostructure protected by a SiO_2 layer during the oxidation process.A groove structure with 150 nm step depth on an AlGaN/GaN heterostructure was formed after 8 h thermal oxidation at 900℃followed by 30 min treatment in 70℃KOH solution.As the oxidation time increases,the etching depth approaches saturation and the roughness of the etched surface becomes much better.The physical mechanism of this phenomenon is also discussed.
基金supported by the Main Direction Program of Knowledge Innovation of the Chinese Academy of Sciences(Grant No.2A2011YYYJ-1123)
文摘Mesa etching technology is considerably important in the Gunn diode fabrication process. In this paper we fabricate InP Gunn diodes with two different kinds of chlorine-based etchants for the mesa etching for comparative study. We use two chlorine-based etchants, one is HCl-based solution （HC1/H3PO4）, and the other is Cl2-based gas mixture by utilizing inductively coupled plasma system （ICP）. The results show that the wet etching （HCl-based） offers low cost and approximately vertical sidewall, whilst ICP system （C12-based） offers an excellent and uniform vertical sidewall, and the over-etching is tiny on the top and the bottom of mesa. And the fabricated mesas of Gunn diodes have average etching rates of 0.6 p.m/min and 1.2 pm/min, respectively. The measured data show that the current of Gunn diode by wet etching is lower than that by ICP, and the former has a higher threshold voltage. It provides a low-cost and reliable method which is potentially applied to the fabrication of chip terahertz sources.
文摘Wet etching characteristics of cubic GaN (c GaN) thin films grown on GaAs(001) by metalorganic vapor phase epitaxy (MOVPE) are investigated.The samples are etched in HCl,H 3PO 4,KOH aqueous solutions,and molten KOH at temperatures in the range of 90～300℃.It is found that different solution produces different etch figure on the surfaces of a sample.KOH based solutions produce rectangular pits rather than square pits.The etch pits elongate in 1 0] direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers. direction,indicating asymmetric etching behavior in the two orthogonal <110> directions.An explanation based on relative reactivity of the various crystallographic planes is employed to interpret qualitatively the asymmetric etching behavior.In addition,it is found that KOH aqueous solution would be more suitable than molten KOH and the two acids for the evaluation of stacking faults in c GaN epilayers.
基金Project supported by National Natural Science Foundation of China(11175049,51177017)
文摘The surface of a commercial Y3Al5O12：Ce^3＋ phosphor was modified by 99% NH_4F＋CH_3COOH solution in a supersonic bath with water temperature of 80 oC for 4 h. The scanning electron microscopy（SEM） results showed that the edge angles were not as sharp as the unmodified particles and the flat surfaces turned rough with many micro-structures covered. Positron lifetime measurements quantitatively showed that surface defects were removed away by more than 50%. As a result, the photoluminescence determinations showed that the backscatter loss was reduced by 4.2% and the emission power was enhanced by 5.6% after the surface modification. The conversion efficiency was greatly improved from 47.3% to 51.1%, as presented by the fluorescence images. Therefore, it would be greatly helpful for the improvement of efficiency, transparency and stability of pc-LED. Moreover, this method was significantly suitable for mass production due to its easy operation and low cost.
基金supported by the Natural Science Foundation of China (Grant No.12234005)the major research and development program of Jiangsu Province (Grant Nos.BE2021007-2 and BK20222007)。
文摘Quartz crystals are the most widely used material in resonant sensors,owing to their excellent piezoelectric and mechanical properties.With the development of portable and wearable devices,higher processing efficiency and geometrical precision are required.Wet etching has been proven to be the most efficient etching method for large-scale production of quartz devices,and many wet etching approaches have been developed over the years.However,until now,there has been no systematic review of quartz crystal etching in liquid phase environments.Therefore,this article provides a comprehensive review of the development of wet etching processes and the achievements of the latest research in thisfield,covering conventional wet etching,additive etching,laser-induced backside wet etching,electrochemical etching,and electrochemical discharge machining.For each technique,a brief overview of its characteristics is provided,associated problems are described,and possible solutions are discussed.This review should provide an essential reference and guidance for the future development of processing strategies for the manufacture of quartz crystal devices.
基金supported by the National Natural Science Foundation of China (Grant Nos. 90406007, 61076069, 60776053, and 10434010)the National Basic Research Program of China (Grant No. 2007CB936800)
文摘This paper describes a new method to create nanoscale SiO2 pits or channels using single-walled carbon nanotubes （SWNTs） in an HF solution at room temperature within a few seconds. Using aligned SWNT arrays, a pattern of nanoscale SiO2 channels can be prepared. The nanoscale SiO2 patterns can also be created on the surface of three- dimensional （3D） SiO2 substrate and even the nanoscale trenches can be constructed with arbitrary shapes. A possible mechanism for this enhanced etching of SiO2 has been qualitatively analysed using defects in SWNTs, combined with H3O＋ electric double layers around SWNTs in an HF solution.
文摘Silicon crystal-facet-dependent nanostructures have been successfully fabricated on a （100）-oriented silicon-oninsulator wafer using electron-beam lithography and the silicon anisotropic wet etching technique. This technique takes advantage of the large difference in etching properties for different crystallographic planes in alkaline solution. The minimum size of the trapezoidal top for those Si nanostructures can be reduced to less than 10nm. Scanning electron microscopy （SEM） and atomic force microscopy （AFM） observations indicate that the etched nanostructures have controllable shapes and smooth surfaces.
基金Project supported by the Knowledge Innovation Program of ISCAS(No.08S4060000)
文摘Low resistance and thermally stable n-type contacts to N-polar GaN are essentially important for vertical light emitting diodes （VLEDs）. The electrical characteristics of VLEDs with n-type contacts on a roughened and flat N-polar surface have been compared. VLEDs with contacts deposited on a roughened surface exhibit lower leakage currents yet a higher operating voltage. Based on this, a new scheme by depositing metallization contacts on a selectively wet-etching roughened surface has been developed. Excellent electrical and optical characteristics have been achieved with this method. An aging test further confirmed its stability.
基金the National Natural Science Foundation of China(No.61574093)the Program for New Century Excellent Talents in University of Ministry of Education of China(No.NCET-10-0583)+2 种基金the Science Fund Program(No.2013ZC57003)the Pre-research Fund(No.9140A14010511JW0304)the Fund of National Key Laboratory of Science and Technology on Nano/Micro Fabrication,Shanghai Jiao Tong University(No.9140C790405110C7904)
文摘A new hybrid method, which combines improved glass-blown technology with wet etching, is reported to fabricate micro wine-glass resonators with high-quality fused silica. The optimum placement is compared to achieve the resonators with good shell shape. The typical shell diameter is about 4 mm and its thickness covers from dozens to hundreds of micrometers. The etching rates in corrosion solutions with different ratios and at different thicknesses of hemispherical shells are studied. We also conclude how to precisely control the thickness.The corrosion solutions with different ratios of HF solution to NH4 F solution make the spherical shells rougher in different degrees. The best roughness is 0.581 nm in the 1 : 8 ratio corrosion solution while the original roughness is 0.537 nm. This fact shows that the resonator remains atomically smooth surface. Based on the glassblowing spherical fused silica structure, the thickness of the resonator is effectively controlled by buffered oxide etch(BOE)technology according to the measured etching rate. The measured resonant frequency of the hemispherical shell at ambient pressure and room temperature is 1.75 k Hz of rocking mode which is close to the simulated frequency.Using such a low-cost hybrid approach, we can fabricate high-quality microscale resonators in batch.
基金Project supported by the National Natural Science Foundation of China(Nos.61474110,61377020,61376089,61223005,61176126)the National Science Fund for Distinguished Young Scholars(No.60925017)
文摘The fabrication of ridge waveguide of 808 nm GaAs-based laser diodes by wet chemical etching is investigated. The etching behavior of GaAs, InGaP and A1GalnP in various solutions is evaluated. As a result, the etching solutions simultaneously corroding InGaP and A1GalnP layers are searched successfully. Effects of etching time and the concentration of mixtures on etching depth and the geometrical shape of ridge are analyzed. It is found that under proper conditions, appropriate etching depth and smooth surfaces can be obtained and the steep degree of pattern can be accepted, especially for wide ridge waveguide laser diodes.
基金Project supported by the Young Scientists Fund of the National Natural Science Foundation of China (Grant No.10904008)the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (GrantNo. 11076008)the Scientific Research Foundation for the Central Universities of China (Grant Nos.ZYGX2009X007,ZYGX2010J045, and ZYGX2011J043)
文摘Theoretical studies show that a Hertzian-conical crack can be considered to be composed of double cone faces for simplicity. In the present study, the three-dimensional finite-difference time-domain method is employed to quantify the electric-field distribution within the subsurface in the presence of such a defect under normal incidence irradiation. Both impurities （inside the crack） and the chemical etching have been investigated. The results show that the maximum electric field amplitude │E│max is 9.57374 V/m when the relative dielectric constant of transparent impurity equals 8.5. And the near-field modulation will be improved if the crack is filled with the remainder polishing powders or water vapor/drops. Meanwhile, the laser-induced initial damage moves to the glass-air surface. In the etched section, the magnitude of intensification is strongly dependent on the inclination angle θ. There will be a highest modulation when θ is around π/6, and the maximum value of IEImax is 18.57314 V/m. When θ ranges from π/θ to π/4, the light intensity enhancement factor can easily be larger than 100, and the modulation follows a decreasing trend. On the other hand, the modulation curves become smooth when θ〉π/4 or θ 〈 π/8.
基金Cambridge Trust and China Scholarship Councilthe support from the UK Royal Academy of Engineering,grant CiET1819_24,EPSRC grants EP/L011700/1,EP/N004272/1,EP/P007767/1(CAM-IES),and EP/T012218/1。
文摘In this work,we have developed a new method for manipulating and transferring up to 5 mm×10 mm epitaxial oxide thin films.The method involves fixing a PET frame onto a PMMA attachment film,enabling transfer of epitaxial films lifted-off by wet chemical etching of a Sr3Al2O6 sacrificial layer.The crystallinity,surface morphology,continuity,and purity of the films are all preserved in the transfer process.We demonstrate the applicability of our method for three different film compositions and structures of thickness~100 nm.Furthermore,we show that by using epitaxial nanocomposite films,lift-off yield is improved by~50% compared to plain epitaxial films and we ascribe this effect to the higher fracture toughness of the composites.This work shows important steps towards large-scale perovskite thin-film-based electronic device applications.
