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Waveguide external cavity narrow linewidth semiconductor lasers 被引量:4
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作者 Chanchan Luo Ruiying Zhang +1 位作者 Bocang Qiu Wei Wang 《Journal of Semiconductors》 EI CAS CSCD 2021年第4期90-97,共8页
Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive... Narrow linewidth light source is a prerequisite for high-performance coherent optical communication and sensing.Waveguide-based external cavity narrow linewidth semiconductor lasers(WEC-NLSLs)have become a competitive and attractive candidate for many coherent applications due to their small size,volume,low energy consumption,low cost and the ability to integrate with other optical components.In this paper,we present an overview of WEC-NLSLs from their required technologies to the state-of-the-art progress.Moreover,we highlight the common problems occurring to current WEC-NLSLs and show the possible approaches to resolving the issues.Finally,we present the possible development directions for the next phase and hope this review will be beneficial to the advancements of WEC-NLSLs. 展开更多
关键词 semiconductor laser narrow linewidth waveguide external cavity
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Analysis and engineering of coupled cavity waveguides based on coupled-mode theory
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作者 林旭升 陈雄文 兰胜 《Chinese Physics B》 SCIE EI CAS CSCD 2005年第10期2033-2040,共8页
The analytical expression for the transmission spectra of coupled cavity waveguides (CCWs) in photonic crystals (PCs) is derived based on the coupled-mode theory (CMT). Parameters in the analytical expression ca... The analytical expression for the transmission spectra of coupled cavity waveguides (CCWs) in photonic crystals (PCs) is derived based on the coupled-mode theory (CMT). Parameters in the analytical expression can be extracted by simple numerical simulations. We reveal that it is the phase shift between the two adjacent PC defects that uniquely determines the flatness of the impurity bands of CCWs. In addition, it is found that the phase shift also greatly affects the bandwidth of CCWs. Thus, the engineering of the impurity bands of CCWs can be realized through the adjustment of the phase shift. Based on the theoretical results, an interesting phenomenon in which a CCW acts as a single PC defect and its impurity band possesses a Lorentz lineshape is predicted. Very good agreement between the analytical results and the numerical simulations based on transfer matrix method has been achieved. 展开更多
关键词 photonic crystals coupled cavity waveguides coupled-mode theory phase shift
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Controllable single-photon transport in an optical waveguide coupled to an optomechanical cavity with a V-type three-level atom 被引量:1
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作者 张玉青 朱中华 +3 位作者 彭朝晖 姜春蕾 柴一峰 谭磊 《Chinese Optics Letters》 SCIE EI CAS CSCD 2018年第1期76-80,共5页
An optomechanical cavity embedded with a V-type three-level atom is exploited to control single-photon transport in a one-dimensional waveguide. The effects of the atom–cavity detuning, the optomechanical effect,the ... An optomechanical cavity embedded with a V-type three-level atom is exploited to control single-photon transport in a one-dimensional waveguide. The effects of the atom–cavity detuning, the optomechanical effect,the coupling strengths between the cavity and the atom or the waveguide, and the atomic dissipation on the single-photon transport properties are analyzed systematically. Interestingly, the single-photon transmission spectra show multiple double electromagnetically induced transparency. Moreover, the double electromagnetically induced transparency can be switched to a single one by tuning the atom–cavity detuning. 展开更多
关键词 EIT Controllable single-photon transport in an optical waveguide coupled to an optomechanical cavity with a V-type three-level atom
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1.06 μm high-power InGaAs/GaAsP quantum well lasers 被引量:2
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作者 Haili Wang Li Zhong +2 位作者 Jida Hou Suping Liu Xiaoyu Ma 《Journal of Semiconductors》 EI CAS CSCD 2017年第11期66-70,共5页
The high power and low internal loss 1.06 μm InGaAs/GaAsP quantum well lasers with asymmetric waveguide structure were designed and fabricated. For a 4000 μm cavity length and 100 μm stripe width device,the maximum... The high power and low internal loss 1.06 μm InGaAs/GaAsP quantum well lasers with asymmetric waveguide structure were designed and fabricated. For a 4000 μm cavity length and 100 μm stripe width device,the maximum output power and conversion efficiency of the device are 7.13 W and 56.4%, respectively. The cavity length dependence of the threshold current density and conversion efficiency have been investigated theoretically and experimentally; the laser diode with 4000 μm cavity length shows better characteristics than that with 3000 and 4500 μm cavity length: the threshold current density is 132.5 A/cm^2, the slope efficiency of 1.00 W/A and the junction temperature of 15.62 K were achieved. 展开更多
关键词 semiconductor laser high power asymmetric waveguide cavity length
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