Lateral two-dimensional(2D) heterostructures have opened up unprecedented opportunities in modern electronic device and material science. In this work, electronic properties of size-dependent MoTe2/WTe2 lateral hetero...Lateral two-dimensional(2D) heterostructures have opened up unprecedented opportunities in modern electronic device and material science. In this work, electronic properties of size-dependent MoTe2/WTe2 lateral heterostructures(LHSs)are investigated through the first-principles density functional calculations. The constructed periodic multi-interfaces patterns can also be defined as superlattice structures. Consequently, the direct band gap character remains in all considered LHSs without any external modulation, while the gap size changes within little difference range with the building blocks increasing due to the perfect lattice matching. The location of the conduction band minimum(CBM) and the valence band maximum(VBM) will change from P-point to Γ-point when m plus n is a multiple of 3 for A-mn LHSs as a result of Brillouin zone folding. The bandgap located at high symmetry Γ-point is favourable to electron transition, which might be useful to optoelectronic device and could be achieved by band engineering. Type-II band alignment occurs in the MoTe2/WTe2 LHSs, for electrons and holes are separated on the opposite domains, which would reduce the recombination rate of the charge carriers and facilitate the quantum efficiency. Moreover, external biaxial strain leads to efficient bandgap engineering. MoTe2/WTe2 LHSs could serve as potential candidate materials for next-generation electronic devices.展开更多
Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight differen...Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio （i.e., the degree of non-stoichiometry）, which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.展开更多
WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-b...WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concen- tration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range,and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identify a fiat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a fiat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.展开更多
Our scanning tunneling microscopy (STM) study observes, for the first time, twin domain boundary (TDB) formations on the surface of WTe2 single crystal, which is glued by solidifying indium to Si substrate. In these T...Our scanning tunneling microscopy (STM) study observes, for the first time, twin domain boundary (TDB) formations on the surface of WTe2 single crystal, which is glued by solidifying indium to Si substrate. In these TDB regions, a large inhomogeneous strain field, especially a critical shear strain of about 7%, is observed by geometric phase analysis. This observation does not obey the old believe that a small mechanical stress is sufficient to drive thermally-induced TDB formations in two-dimensional materials. To resolve the contradiction, we perform density functional theory calculations combined with elasticity theory analysis, which show that TDBs on WTe2 are entirely displacement-induced, for which a critical strain is necessary to overcome the onset barrier.展开更多
Unsaturated magnetoresistance （MR） has been reported in type-II Weyl semimetal WTe2, manifested as a perfect compensation of opposite carriers. We report linear MR （LMR） in WTe2 crystals, the onset of which was id...Unsaturated magnetoresistance （MR） has been reported in type-II Weyl semimetal WTe2, manifested as a perfect compensation of opposite carriers. We report linear MR （LMR） in WTe2 crystals, the onset of which was identified by constructing the MR mobility spectra for weak fields. The LMR further increased and became dominant for fields stronger than 20 T, while the parabolic MR gradually decayed. The LMR was also observed in high-pressure conditions.展开更多
Using scanning tunneling microscopy/spectroscopy(STM/STS),we examine quasiparticle scattering and interference properties at the surface of WTe2.WTe2,layered transition metal dichalcogenide,is predicted to be a type-l...Using scanning tunneling microscopy/spectroscopy(STM/STS),we examine quasiparticle scattering and interference properties at the surface of WTe2.WTe2,layered transition metal dichalcogenide,is predicted to be a type-ll Weyl semimetal.The Weyl fermion states in WTe2 emerge as topologically protected touching points of electron and hole pockets,and Fermi arcs connecting them can be visible in the spectral function on the surface.To probe the properties of surface states,we have conducted low-temperature STM/STS(at 2.7 K)on the surfaces of WTe2 single crystals.We visualize the surface states of WTe2 with atomic scale resolution.Clear surface states emerging from the bulk electron pocket have been identified and their connection with the bulk electronic states shows good agreement with calculations.We show the interesting double resonance peaks in the local density of states appearing at localized impurities.The low-energy resonant peak occurs near the Weyl point above the Fermi energy and it may be mixed with the surface state of Weyl points,which makes it difficult to observe the topological nature of the Weyl semimetal WTe2.展开更多
采用磁控溅射沉积的WTe_(2)作为可饱和吸收体,在掺铒光纤激光器中实现了超快脉冲的产生。在1559.31 nm波长处,实验测得的3 d B光谱带宽为11.54 nm,脉冲宽度为231 fs。在26.6 MHz基频处获得了最大平均输出功率为58 m W、脉冲能量为2.18 ...采用磁控溅射沉积的WTe_(2)作为可饱和吸收体,在掺铒光纤激光器中实现了超快脉冲的产生。在1559.31 nm波长处,实验测得的3 d B光谱带宽为11.54 nm,脉冲宽度为231 fs。在26.6 MHz基频处获得了最大平均输出功率为58 m W、脉冲能量为2.18 n J的超短脉冲。研究结果表明,WTe_(2)可饱和吸收体可作为一种性能优异的光子器件,在1.5μm波段实现超短脉冲的产生。展开更多
Inducing or enhancing superconductivity in topological materials is an important route toward topological superconductivity.Reducing the thickness of transition metal dichalcogenides(e.g.WTe2 and MoTe2)has provided an...Inducing or enhancing superconductivity in topological materials is an important route toward topological superconductivity.Reducing the thickness of transition metal dichalcogenides(e.g.WTe2 and MoTe2)has provided an important pathway to engineer superconductivity in topological matters.However,such monolayer sample is difficult to obtain,unstable in air,and with extremely low Tc.Here we report an experimentally convenient approach to control the interlayer coupling to achieve tailored topological properties,enhanced superconductivity and good sample stability through organic-cation intercalation of the Weyl semimetals MoTe2 and WTe2.The as-formed organic-inorganic hybrid crystals are weak topological insulators with enhanced Tc of 7.0 K for intercalated MoTe2(0.25 K for pristine crystal)and2.3 K for intercalated WTe2(2.8 times compared to monolayer WTe2).Such organic-cation intercalation method can be readily applied to many other layered crystals,providing a new pathway for manipulating their electronic,topological and superconducting properties.展开更多
We have investigated the electronic properties of WTe2 armchair nanoribbons with defects. WTe2 nanoribbons can be categorized depending on the edge structure in two types： armchair and zigzag. WTe2 in its bulk form h...We have investigated the electronic properties of WTe2 armchair nanoribbons with defects. WTe2 nanoribbons can be categorized depending on the edge structure in two types： armchair and zigzag. WTe2 in its bulk form has an indirect band gap but nanoribbons and nanosheets of WTe2 have direct band gaps. Interestingly, the zigzag nanoribbon is metallic while the armchair nanoribbons are semiconducting. Thus they can find applications in device fabrication. Therefore, it is very important to study the effect of defects on the electronic properties of the armchair nanoribbons as these defects can impair the device properties and characteristics. We have considered defects such as： vacancy, rough edge, wrap, ripple and twist in this work. We report the band gap variation with these defects. We have also studied the change in band gap and total energy with varying degrees of wrap, ripple and twist.展开更多
The potential of bulk-like WTe2 particles for the realization of a passive Q-switch operating at the 1 μm wavelength was investigated. The WTe2 particles were prepared using a simple mechanical exfoliation method tog...The potential of bulk-like WTe2 particles for the realization of a passive Q-switch operating at the 1 μm wavelength was investigated. The WTe2 particles were prepared using a simple mechanical exfoliation method together with Scotch tape. By attaching bulk-like WTe2 particles, which remained on the top of the sticky surface of a small segment of the Scotch tape, to the flat side of a side-polished fiber, a saturable absorber（SA） was readily implemented. A strong saturable absorption was then readily obtained through an evanescent field interaction with the WTe2 particles. The modulation depth of the prepared SA was measured as ~2.18% at 1.03 μm. By incorporating the proposed SA into an all-fiberized ytterbium-doped fiber ring cavity, stable Qswitched pulses were readily achieved.展开更多
We explore the impact of edge states in three types of transition metal dichalcogenides （TMDs）, namely metallic Td-phase WTe2 and semiconducting 2H-phase MoTe2 and MoS2, by patterning thin flakes into ribbons with v...We explore the impact of edge states in three types of transition metal dichalcogenides （TMDs）, namely metallic Td-phase WTe2 and semiconducting 2H-phase MoTe2 and MoS2, by patterning thin flakes into ribbons with varying channel widths. No obvious charge depletion at the edges is observed for any of these three materials, in contrast to observations made for graphene nanoribbon devices. The semiconducting ribbons are characterized in a three-terminal field-effect transistor （FET） geometry. In addition, two ribbon array designs have been carefully investigated and found to exhibit current levels higher than those observed for conventional one-channel devices. Our results suggest that device structures incorporating a high number of edges can improve the performance of TMD FETs. This improvement is attributed to a higher local electric field, resulting from the edges, increasing the effective number of charge carriers, and the absence of any detrimental edge-related scattering.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61674053 and 11881240254)the Natural Science Foundation of Henan Province,China(Grant No.162300410325)+1 种基金the Key Young Teachers of Henan Province,China(Grant No.2017GGJS179)the Program for Science&Technology Innovation Talents in Universities of Henan Province,China(Grant No.18HASTIT030)
文摘Lateral two-dimensional(2D) heterostructures have opened up unprecedented opportunities in modern electronic device and material science. In this work, electronic properties of size-dependent MoTe2/WTe2 lateral heterostructures(LHSs)are investigated through the first-principles density functional calculations. The constructed periodic multi-interfaces patterns can also be defined as superlattice structures. Consequently, the direct band gap character remains in all considered LHSs without any external modulation, while the gap size changes within little difference range with the building blocks increasing due to the perfect lattice matching. The location of the conduction band minimum(CBM) and the valence band maximum(VBM) will change from P-point to Γ-point when m plus n is a multiple of 3 for A-mn LHSs as a result of Brillouin zone folding. The bandgap located at high symmetry Γ-point is favourable to electron transition, which might be useful to optoelectronic device and could be achieved by band engineering. Type-II band alignment occurs in the MoTe2/WTe2 LHSs, for electrons and holes are separated on the opposite domains, which would reduce the recombination rate of the charge carriers and facilitate the quantum efficiency. Moreover, external biaxial strain leads to efficient bandgap engineering. MoTe2/WTe2 LHSs could serve as potential candidate materials for next-generation electronic devices.
基金Supported by the National Key R&D Program of China under Grant Nos 2016YFA0300404 and 2017YFA0403600the National Natural Science Foundation of China under Grant Nos 51603207,U1532267,11574288 and 11674327the Natural Science Foundation of Anhui Province under Grant No 1708085MA08
文摘Non-stoiehiometry effect on the extreme magnetoresistanee is systematically investigated for the Weyl semimetal WTe2. Magnetoresistance and Hall resistivity are measured for the as-grown samples with a slight difference in Te vacancies and the annealed samples with increased Te vacancies. The fits to a two-band model show that the magnetoresistanee is strongly dependent on the residual resistivity ratio （i.e., the degree of non-stoichiometry）, which is eventually understood in terms of electron doping that not only breaks the balance between electron-type and hole-type carrier densities, but also reduces the average carrier mobility. Thus the compensation effect and ultrahigh mobility are probably the main driving force of the extreme magnetoresistance in WTe2.
基金Supported by the National Natural Science Foundation of China under Grant No 11574367the National Basic Research Program of China under Grant Nos 2013CB921904 and 2015CB921300+2 种基金the National Key Research and Development Program of China under Grant No 2016YFA0300600the Strategic Priority Research Program(B)of the Chinese Academy of Sciences under Grant No XDB07020300the US Department of Energy under Grant No DE-SC0014208
文摘WTe2 has attracted a great deal of attention because it exhibits extremely large and non-saturating magnetore- sistance. The underlying origin of such a giant magnetoresistance is still under debate. Utilizing laser-based angle-resolved photoemission spectroscopy with high energy and momentum resolutions, we reveal the complete electronic structure of WTe2. This makes it possible to determine accurately the electron and hole concentrations and their temperature dependence. We find that, with increasing the temperature, the overall electron concen- tration increases while the total hole concentration decreases. It indicates that the electron-hole compensation, if it exists, can only occur in a narrow temperature range,and in most of the temperature range there is an electron-hole imbalance. Our results are not consistent with the perfect electron-hole compensation picture that is commonly considered to be the cause of the unusual magnetoresistance in WTe2. We identify a fiat band near the Brillouin zone center that is close to the Fermi level and exhibits a pronounced temperature dependence. Such a fiat band can play an important role in dictating the transport properties of WTe2. Our results provide new insight on understanding the origin of the unusual magnetoresistance in WTe2.
基金We thank the Ministry of Science and Technology of China (Nos. 2016YFA0301003 and 2016YFA0300403)the National Natural Science Foundation of China (Nos. 11521404, 11634009, U1632102, 11504230, 11674222, 11574202, 11674226, 11574201, 11655002, and U1632272) for partial support+4 种基金W Y. X. was supported by the National Science Foundation Award (No. DMR-1305293)S. B.乙 was supported by the US Department of Energy (DOE)(No. DESC0002623)The supercomputer time sponsored by National Energy aesearch Scientific Computing Center (NERSC) under DOE contract (No. DE-AC02-05CH11231)the Center for Computational Innovations (CCI) at Rensselaer Polytechnic Institute (RPI) are also acknowledgedThis project has been supported by a grant &om Science and Technology Commission of Shanghai Municipality (No. 16DZ2260200) and the Strategic Priority Research Program of Chinese Academy of Sciences (No. XDB28000000).
文摘Our scanning tunneling microscopy (STM) study observes, for the first time, twin domain boundary (TDB) formations on the surface of WTe2 single crystal, which is glued by solidifying indium to Si substrate. In these TDB regions, a large inhomogeneous strain field, especially a critical shear strain of about 7%, is observed by geometric phase analysis. This observation does not obey the old believe that a small mechanical stress is sufficient to drive thermally-induced TDB formations in two-dimensional materials. To resolve the contradiction, we perform density functional theory calculations combined with elasticity theory analysis, which show that TDBs on WTe2 are entirely displacement-induced, for which a critical strain is necessary to overcome the onset barrier.
文摘Unsaturated magnetoresistance （MR） has been reported in type-II Weyl semimetal WTe2, manifested as a perfect compensation of opposite carriers. We report linear MR （LMR） in WTe2 crystals, the onset of which was identified by constructing the MR mobility spectra for weak fields. The LMR further increased and became dominant for fields stronger than 20 T, while the parabolic MR gradually decayed. The LMR was also observed in high-pressure conditions.
基金We thank K.Lee and J.Heo for useful discussions and other colleagues at the Samsung Advanced Institute of Technology(SAIT)This work has been supported by the Global Research Laboratory Program(No.2016K1A1A2912707)+5 种基金Quantum Computing Development Program(No.2019M3E4A 1080227)the Basic Science Research Program(No.2015M3A7B4050455)the SRC Center for Topological Matter(No.2018R1A5A6075964)through the National Research Foundation(NRF)funded by the Ministry of Science and ICT(MSIT)in KoreaThis work has been supported by Indutrial Strategic Technology Development Program(No.10085617)funded by the Ministry of Trade Industry&Energy(MOTIE)in KoreaThis work has been supported by Institute for Basic Science(No.IBS-R011-D1)Supercomputing resources including technical service were supported by National Institute of Supercomputing and Network through Korea Institute of Science and Technology Information(No.KSC 2018-51-0008).
文摘Using scanning tunneling microscopy/spectroscopy(STM/STS),we examine quasiparticle scattering and interference properties at the surface of WTe2.WTe2,layered transition metal dichalcogenide,is predicted to be a type-ll Weyl semimetal.The Weyl fermion states in WTe2 emerge as topologically protected touching points of electron and hole pockets,and Fermi arcs connecting them can be visible in the spectral function on the surface.To probe the properties of surface states,we have conducted low-temperature STM/STS(at 2.7 K)on the surfaces of WTe2 single crystals.We visualize the surface states of WTe2 with atomic scale resolution.Clear surface states emerging from the bulk electron pocket have been identified and their connection with the bulk electronic states shows good agreement with calculations.We show the interesting double resonance peaks in the local density of states appearing at localized impurities.The low-energy resonant peak occurs near the Weyl point above the Fermi energy and it may be mixed with the surface state of Weyl points,which makes it difficult to observe the topological nature of the Weyl semimetal WTe2.
文摘采用磁控溅射沉积的WTe_(2)作为可饱和吸收体,在掺铒光纤激光器中实现了超快脉冲的产生。在1559.31 nm波长处,实验测得的3 d B光谱带宽为11.54 nm,脉冲宽度为231 fs。在26.6 MHz基频处获得了最大平均输出功率为58 m W、脉冲能量为2.18 n J的超短脉冲。研究结果表明,WTe_(2)可饱和吸收体可作为一种性能优异的光子器件,在1.5μm波段实现超短脉冲的产生。
基金supported by the National Natural Science Foundation of China(11725418,21975140)Ministry of Science and Technology of China(2016YFA0301004,2016YFA0301001 and2015CB921001)+1 种基金the Basic Science Center Program of NSFC(51788104)Beijing Advanced Innovation Center for Future Chip(ICFC).
文摘Inducing or enhancing superconductivity in topological materials is an important route toward topological superconductivity.Reducing the thickness of transition metal dichalcogenides(e.g.WTe2 and MoTe2)has provided an important pathway to engineer superconductivity in topological matters.However,such monolayer sample is difficult to obtain,unstable in air,and with extremely low Tc.Here we report an experimentally convenient approach to control the interlayer coupling to achieve tailored topological properties,enhanced superconductivity and good sample stability through organic-cation intercalation of the Weyl semimetals MoTe2 and WTe2.The as-formed organic-inorganic hybrid crystals are weak topological insulators with enhanced Tc of 7.0 K for intercalated MoTe2(0.25 K for pristine crystal)and2.3 K for intercalated WTe2(2.8 times compared to monolayer WTe2).Such organic-cation intercalation method can be readily applied to many other layered crystals,providing a new pathway for manipulating their electronic,topological and superconducting properties.
基金the Department of Science and Technology of the government of India for partially funding this work
文摘We have investigated the electronic properties of WTe2 armchair nanoribbons with defects. WTe2 nanoribbons can be categorized depending on the edge structure in two types： armchair and zigzag. WTe2 in its bulk form has an indirect band gap but nanoribbons and nanosheets of WTe2 have direct band gaps. Interestingly, the zigzag nanoribbon is metallic while the armchair nanoribbons are semiconducting. Thus they can find applications in device fabrication. Therefore, it is very important to study the effect of defects on the electronic properties of the armchair nanoribbons as these defects can impair the device properties and characteristics. We have considered defects such as： vacancy, rough edge, wrap, ripple and twist in this work. We report the band gap variation with these defects. We have also studied the change in band gap and total energy with varying degrees of wrap, ripple and twist.
基金supported by the National Research Foundation of Korea funded by the Korean Government(MSIT),South Korea(Grant Nos.NRF-2015R1A2A2A11000907 and NRF-2015R1A2A2A04006979)Ministry of Science and ICT(MSIT),Korea,under the Information Technology Research Center(ITRC)support program(IITP-2017-2015-0-00385),supervised by the Institute for Information and Communications Technology Promotion(IITP)
文摘The potential of bulk-like WTe2 particles for the realization of a passive Q-switch operating at the 1 μm wavelength was investigated. The WTe2 particles were prepared using a simple mechanical exfoliation method together with Scotch tape. By attaching bulk-like WTe2 particles, which remained on the top of the sticky surface of a small segment of the Scotch tape, to the flat side of a side-polished fiber, a saturable absorber（SA） was readily implemented. A strong saturable absorption was then readily obtained through an evanescent field interaction with the WTe2 particles. The modulation depth of the prepared SA was measured as ~2.18% at 1.03 μm. By incorporating the proposed SA into an all-fiberized ytterbium-doped fiber ring cavity, stable Qswitched pulses were readily achieved.
文摘We explore the impact of edge states in three types of transition metal dichalcogenides （TMDs）, namely metallic Td-phase WTe2 and semiconducting 2H-phase MoTe2 and MoS2, by patterning thin flakes into ribbons with varying channel widths. No obvious charge depletion at the edges is observed for any of these three materials, in contrast to observations made for graphene nanoribbon devices. The semiconducting ribbons are characterized in a three-terminal field-effect transistor （FET） geometry. In addition, two ribbon array designs have been carefully investigated and found to exhibit current levels higher than those observed for conventional one-channel devices. Our results suggest that device structures incorporating a high number of edges can improve the performance of TMD FETs. This improvement is attributed to a higher local electric field, resulting from the edges, increasing the effective number of charge carriers, and the absence of any detrimental edge-related scattering.
