Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models...Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.展开更多
Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the i...Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.展开更多
By formation of an intermediate semiconductor layer （ISL） with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An arr...By formation of an intermediate semiconductor layer （ISL） with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method （TLM） test patterns is formed on N-wells created by P＋ ion implantation into Si-faced p-type 4H- SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance pc as low as 4.23×10-5Ω·cm2 is achieved after annealing in N2 at 800 ℃ for 3 min, which is much lower than that （〉 900℃） in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge＋ ion implantations.展开更多
Motivated by the success of graphene research,atomically-thin transition metal dichalcogenide(TMDC)semiconductors are considered as promising field-effect transistor(FET)channel materials for fundamental research and ...Motivated by the success of graphene research,atomically-thin transition metal dichalcogenide(TMDC)semiconductors are considered as promising field-effect transistor(FET)channel materials for fundamental research and potential applications.Bridging atomically-thin TMDC channels to external circuitry using metallic leads is one of the most critical steps towards high-performance devices and cutting-edge materials physics research.展开更多
The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:p...The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters.展开更多
Ohmic contacts are fundamental components in semiconductor technology,facilitating efficient electrical connection and excellent device performance.We employ first-principles calculations to show that semimetallic gra...Ohmic contacts are fundamental components in semiconductor technology,facilitating efficient electrical connection and excellent device performance.We employ first-principles calculations to show that semimetallic graphene is a natural Ohmic contact partner of monolayer semiconducting black arsenic(BAs),for which the top of the valence band is below the Fermi energy of the order of 10~2 meV.The Ohmic contact arises from the giant Stark effect induced by van der Waals electron transfer from BAs to graphene,which does not destroy their respective band features.Remarkably,we show that this intrinsic Ohmic contact remains robust across a wide range of interlayer distances(adjustable by strain)or vertical electric fields,whereas the weak spin splitting of the order of 1 meV induced by symmetry breaking plays little part in Ohmic contact.These findings reveal the potential applications of graphene–BAs in ultralow dissipation transistors.展开更多
Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silico...Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]).展开更多
Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing （RTP）. Since abnormal resistance values were observed during the conta...Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing （RTP）. Since abnormal resistance values were observed during the contact resistance testing,the surface morphology and contact borders of the samples were analyzed to determine the physical mechanism. Such abnormal phenomenon is found to originate from cracking of the AlGaN layer during RTP,flowing of Ti/Al metallic liquid along the crevices,and continuous reaction of the metallic liquid with AlGaN/GaN. Such processes result in abnormal conduction channels. The possible mechanism of the crevice formation was discussed,and the possible solutions to avoid the crevices were proposed.展开更多
When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit （IC） electronics field. The parame...When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit （IC） electronics field. The parameters of such contacts can be determined from their current-voltage （I-V） characteristics. The literature contains many proposals for extracting the contact parameters using graphical methods. However, such methods are generally applicable only to contacts with a forward bias, whereas many Schottky contacts actually operate un- der a reverse bias. Accordingly, the present study proposed a generalized reverse current-voltage （I-V） plot which enables the series resis- tance, barrier height, and ideality factor of a reverse biased Schottky contact to be extracted from a single set of I-V measurements. A theo- retical derivation of the proposed approach was presented and a series of validation tests were then performed. The results show that the pro- posed method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.展开更多
Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- an...Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- and two- dimensional Poisson＇s equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering （DIBL） effect. The calculated results reveal that the dual material gate （DMG） structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor （SMGFET）.展开更多
The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on...The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane （CIP） structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.展开更多
Two-dimensional transition metal dichalcogenides(TMDs)have emerged as promising candidate materials for next-generation electronic and optoelectronic devices due to their exceptional carrier mobility,strong light-matt...Two-dimensional transition metal dichalcogenides(TMDs)have emerged as promising candidate materials for next-generation electronic and optoelectronic devices due to their exceptional carrier mobility,strong light-matter interactions,and remarkable mechanical flexibility[1].However,their transition from laboratory prototypes to industrial-scale manufacturing is fundamentally limited by van der Waals(vd W)contacts,which,in stark contrast to covalent bonding in silicon technologies,exhibit weak interfacial band coupling and low bonding strength,resulting in unacceptably high contact resistance(RC)and poor thermomechanical stability[2].展开更多
Currently,the development of high-efficiency two-dimensional(2D)transistors is still hindered by the limited availability of suitable semiconductors and the contact resistance between the metal contact and the 2D semi...Currently,the development of high-efficiency two-dimensional(2D)transistors is still hindered by the limited availability of suitable semiconductors and the contact resistance between the metal contact and the 2D semiconductors.Endeavors to address these challenges are highly desired.In this study,we conducted a comprehensive exploration of the potential 2D transition metal dinitrides(TMN_(2)s,TM=all the 3d,4d and 5d transition metals)with hexagonal(h-)and trigonal(t-)phases through systematic first-principles calculations.Among all h-TMN_(2)s and t-TMN_(2)s structures,we identified 8 TMN_(2)s that exhibit dynamical and thermal stability at room temperature.Of these,the h-TiN_(2),h-ZrN_(2)and h-HfN_(2)arefound to be semiconductors,and their direct bang gap,calculated at the HSE06 level,are 1.48,1.96 and 2.64 eV,respectively.The electron and hole mobility(μ_(e)andμ_(h))of these three structures exceed 1×10^(4)and1×10^(3)cm^(2)·V^(-1)·s^(-1),respectively.Especially,theμeof h-TiN_(2)amounts to 2.5×10^(4)cm^(2)·V^(-1)·s^(-1),and theμhof h-ZrN_(2)reaches to 7.7×10^(3)cm^(2)·V^(-1)·s^(-1).Importantly,unlike the MoS_(2)system,h-TMN_(2)forms Ohm contacts with both transition metals(e.g.,Cu)and 2D metals(e.g.,graphene),with tunneling possibilities exceeding 50%in the Cu system.These outstanding intrinsic semiconductor properties and contact characteristics exhibited by h-TMN_(2)highlight the immense potential of transition metal dinitrides in driving the advancement of next-generation information devices.Our findings significantly broaden the range of 2D materials and provide valuable insights for the development of high-eficiency 2D information devices.展开更多
Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturiza...Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3].展开更多
基金Project supported by the National Natural Science Foundation of China(No.12402113)the Sichuan Science and Technology Program(No.2024NSFSC0037)。
文摘Piezoelectric semiconductor(PSC)materials exhibit strong electromechanical coupling affected by free carriers,which makes their contact behavior essential for sensors,actuators,and electronic devices.Analytical models for three-dimensional(3D)PSC contact problems are still scarce,especially for conductive indenters.This work develops a semi-analytical framework to study the 3D frictionless contact between a conductive indenter and a PSC half-space.Fundamental solutions under a unit force and a unit electric charge are derived,and the corresponding frequency response functions are combined with a discrete convolution-fast Fourier transform(DC-FFT)algorithm to achieve an efficient semi-analytical contact model.The numerical results demonstrate that an increase in the surface charge density reduces the indentation pressure and modifies the electric potential distribution.A higher steady carrier concentration enhances the screening effect,suppresses the electromechanical coupling,and shifts the system response toward purely elastic behaviors.The sensitivity analysis shows that the indentation depth is dominated by the elastic constants,while the electric potential is mainly affected by the piezoelectric coefficient.Although the analysis is carried out with spherical indenters,the model is not limited to a specific indenter shape.It provides an effective tool for investigating complex 3D PSC contact problems and offers useful insights into the design of PSC materials-based devices.
文摘Considering the tunneling effect and the Schottky effect,the metal semiconductor contact is simulated by using self consistent ensemble Monte Carlo method.Under different biases or at different barrier heights,the investigation into the tunneling current indicates that the tunneling effect is of great importance under reverse biases.The Schottky barrier diode current due to Schottky effect is in agreement with the theoretical one.The barrier lowering is found a profound effect on the current transport at the metal semiconductor interface.
基金Project supported by the National Natural Science Foundation of China (Grant No J54508250120)Xi’an Applied Materials Innovation Fund (Grant No XA-AM-200704)
文摘By formation of an intermediate semiconductor layer （ISL） with a narrow band gap at the metallic contact/SiC interface, this paper realises a new method to fabricate the low-resistance Ohmic contacts for SiC. An array of transfer length method （TLM） test patterns is formed on N-wells created by P＋ ion implantation into Si-faced p-type 4H- SiC epilayer. The ISL of nickel-metal Ohmic contacts to n-type 4H-SiC could be formed by using Germanium ion implantation into SiC. The specific contact resistance pc as low as 4.23×10-5Ω·cm2 is achieved after annealing in N2 at 800 ℃ for 3 min, which is much lower than that （〉 900℃） in the typical SiC metallisation process. The sheet resistance Rsh of the implanted layers is 1.5 kΩ/□. The technique for converting photoresist into nanocrystalline graphite is used to protect the SiC surface in the annealing after Ge＋ ion implantations.
文摘Motivated by the success of graphene research,atomically-thin transition metal dichalcogenide(TMDC)semiconductors are considered as promising field-effect transistor(FET)channel materials for fundamental research and potential applications.Bridging atomically-thin TMDC channels to external circuitry using metallic leads is one of the most critical steps towards high-performance devices and cutting-edge materials physics research.
文摘The purpose of this work is to analyze the electrical properties of the metal–semiconductor contact(MSC)in the framework of the theory of complex systems.The effect of inhomogeneity of the different microstructures:polycrystalline,monocrystalline,amorphous metal–semiconductor contact surface is investigated,considering a Schottky diode(SD)as a parallel connection of numerous subdiodes.It has been shown that the polycrystallinity of the metal translates a homogeneous contact into a complex system,which consists of parallel connected numerous elementary contacts having different properties and parameters.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62374088 and 12074193)。
文摘Ohmic contacts are fundamental components in semiconductor technology,facilitating efficient electrical connection and excellent device performance.We employ first-principles calculations to show that semimetallic graphene is a natural Ohmic contact partner of monolayer semiconducting black arsenic(BAs),for which the top of the valence band is below the Fermi energy of the order of 10~2 meV.The Ohmic contact arises from the giant Stark effect induced by van der Waals electron transfer from BAs to graphene,which does not destroy their respective band features.Remarkably,we show that this intrinsic Ohmic contact remains robust across a wide range of interlayer distances(adjustable by strain)or vertical electric fields,whereas the weak spin splitting of the order of 1 meV induced by symmetry breaking plays little part in Ohmic contact.These findings reveal the potential applications of graphene–BAs in ultralow dissipation transistors.
文摘Two-dimensional(2D)transition metal dichalcogenides(TMDs),which allow atomic-scale manipulation,have supe-rior electrical and optical properties that challenge the limits of traditional bulk semiconductors like silicon^([1,2]).As a repre-sentative TMD and a promising 2D channel material for high-performance,scalable p-type transistors,tungsten diselenide(WSe_(2))has attracted considerable academic and industrial interest for its potential in advanced complementary metal−oxide−semiconductor(CMOS)logic technology and in extending Moore’s Law^([3−7]).
文摘Ti/Al/Ti/Au and Ti/Al/Ni/Au ohmic contacts were fabricated on AlGaN/GaN heterostructure under different temperatures of rapid thermal processing （RTP）. Since abnormal resistance values were observed during the contact resistance testing,the surface morphology and contact borders of the samples were analyzed to determine the physical mechanism. Such abnormal phenomenon is found to originate from cracking of the AlGaN layer during RTP,flowing of Ti/Al metallic liquid along the crevices,and continuous reaction of the metallic liquid with AlGaN/GaN. Such processes result in abnormal conduction channels. The possible mechanism of the crevice formation was discussed,and the possible solutions to avoid the crevices were proposed.
基金financially supported by the Fund under Grant No.NSC95-2516-S-020-003
文摘When a metal makes intimate contact with a semiconductor material, a Schottky barrier may be created. The Schottky contact has many important applications in the integrated circuit （IC） electronics field. The parameters of such contacts can be determined from their current-voltage （I-V） characteristics. The literature contains many proposals for extracting the contact parameters using graphical methods. However, such methods are generally applicable only to contacts with a forward bias, whereas many Schottky contacts actually operate un- der a reverse bias. Accordingly, the present study proposed a generalized reverse current-voltage （I-V） plot which enables the series resis- tance, barrier height, and ideality factor of a reverse biased Schottky contact to be extracted from a single set of I-V measurements. A theo- retical derivation of the proposed approach was presented and a series of validation tests were then performed. The results show that the pro- posed method is capable of extracting reliable estimates of the contact parameters even in the presence of experimental noise.
基金Project supported by the Pre-research Foundation from the National Ministries and Commissions of China (GrantNo.51308030201)
文摘Sub-threshold characteristics of the dual material gate 4H-SiC MESFET （DMGFET） are investigated and the analytical models to describe the drain-induced barrier lowering （DIBL） effect are derived by solving one- and two- dimensional Poisson＇s equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering （DIBL） effect. The calculated results reveal that the dual material gate （DMG） structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal-semiconductor field-effect transistor （SMGFET）.
基金supported by the National Natural Science Foundation of China(Grant Nos.U1304518 and U1404109)
文摘The geometries and electronic properties of SnSe/metal contact have been investigated using first-principles calcula- tion. It is found that the geometries of monolayer SnSe were affected slightly when SnSe adsorbs on M （M = Ag,Au,Ta） substrate. Compared with the corresponding free-standing monolayer SnSe, the adsorbed SnSe undergoes a semiconductor- to-metal transition. The potential difference AV indicates that SnSefra contact is the best candidate for the Schottky contact of the three SnSe/M contacts. Two types of current-in-plane （CIP） structure, where a freestanding monolayer SnSe is con- nected to SnSe/M, are identified as the n-type CIP structure in SnSe/Ag contact and p-type CIP structure in SnSe/Au and SnSe/Ta contact. The results can stimulate further investigation for the multifunctional SnSe/metal contact.
文摘Two-dimensional transition metal dichalcogenides(TMDs)have emerged as promising candidate materials for next-generation electronic and optoelectronic devices due to their exceptional carrier mobility,strong light-matter interactions,and remarkable mechanical flexibility[1].However,their transition from laboratory prototypes to industrial-scale manufacturing is fundamentally limited by van der Waals(vd W)contacts,which,in stark contrast to covalent bonding in silicon technologies,exhibit weak interfacial band coupling and low bonding strength,resulting in unacceptably high contact resistance(RC)and poor thermomechanical stability[2].
基金financially supported by the National Natural Science Foundation of China(No.52171141)the Fund of Natural Science Special(Special Post)Research Foundation of Guizhou University(No.2023-032)the Fund of Research Foundation of Guizhou University(No.2024-33)
文摘Currently,the development of high-efficiency two-dimensional(2D)transistors is still hindered by the limited availability of suitable semiconductors and the contact resistance between the metal contact and the 2D semiconductors.Endeavors to address these challenges are highly desired.In this study,we conducted a comprehensive exploration of the potential 2D transition metal dinitrides(TMN_(2)s,TM=all the 3d,4d and 5d transition metals)with hexagonal(h-)and trigonal(t-)phases through systematic first-principles calculations.Among all h-TMN_(2)s and t-TMN_(2)s structures,we identified 8 TMN_(2)s that exhibit dynamical and thermal stability at room temperature.Of these,the h-TiN_(2),h-ZrN_(2)and h-HfN_(2)arefound to be semiconductors,and their direct bang gap,calculated at the HSE06 level,are 1.48,1.96 and 2.64 eV,respectively.The electron and hole mobility(μ_(e)andμ_(h))of these three structures exceed 1×10^(4)and1×10^(3)cm^(2)·V^(-1)·s^(-1),respectively.Especially,theμeof h-TiN_(2)amounts to 2.5×10^(4)cm^(2)·V^(-1)·s^(-1),and theμhof h-ZrN_(2)reaches to 7.7×10^(3)cm^(2)·V^(-1)·s^(-1).Importantly,unlike the MoS_(2)system,h-TMN_(2)forms Ohm contacts with both transition metals(e.g.,Cu)and 2D metals(e.g.,graphene),with tunneling possibilities exceeding 50%in the Cu system.These outstanding intrinsic semiconductor properties and contact characteristics exhibited by h-TMN_(2)highlight the immense potential of transition metal dinitrides in driving the advancement of next-generation information devices.Our findings significantly broaden the range of 2D materials and provide valuable insights for the development of high-eficiency 2D information devices.
文摘Doping is essential for modulating semiconductor conductivity,forming p-n junctions,and reducing contact resistance[1].Notably,as organic semiconductors(OSCs)advance toward high performance,flexibility,and miniaturization,achieving precise regionally selective doping becomes critical for building complex,highly integrated devices[2].In inorganic semiconductors(e.g.,silicon),sub-100-nanometer regional doping is achievable through photolithography and ion implantation—techniques foundational to modern complementary metaloxide-semiconductor(CMOS)technology[3].
