Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results ...Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.展开更多
To reveal the drop failure modes of the wafer level chip scale packages （WLCSPs） with Sn-3.0Ag-0.5Cu solder joints, board level drop tests were performed according to the JEDEC standard. Six failure modes were iden...To reveal the drop failure modes of the wafer level chip scale packages （WLCSPs） with Sn-3.0Ag-0.5Cu solder joints, board level drop tests were performed according to the JEDEC standard. Six failure modes were identified, i.e., short FR-4 cracks and complete FR-4 cracks at the printing circuit board （PCB） side, split between redistribution layer （RDL） and Cu under bump metallization （UBM）, RDL fracture, bulk cracks and partial bulk and intermetallic compound （IMC） cracks at the chip side. For the outmost solder joints, complete FR-4 cracks tended to occur, due to large deformation of PCB and low strength of FR-4 dielectric layer. The formation of complete FR-4 cracks largely absorbed the impact energy, resulting in the absence of other failure modes. For the inner solder joints, the absorption of impact energy by the short FR-4 cracks was limited, resulting in other failure modes at the chip side.展开更多
Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied dur...Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxidation,decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique （DECT）. The cleaning effects of DECT were compared with the RCA cleaning technique, including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique.展开更多
We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of...We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.展开更多
The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demon...The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demonstrated that a high density of oxygen precipitates and thin denuded zone are obtained in N2/NH3 ambient,while a relatively lower density of oxygen precipitates and thicker denuded zone are observed in N2 ambient. As the RTA duration times increased, the oxygen precipitate density increased and the denuded zone depth decreased. X-ray photoelectron spectroscopy （XPS） data and atomic force microscope （AFM） results show that there RTA process,which can explain the different effect of RTA was a surface nitriding reaction during the N2/NH3 ambient ambient.展开更多
A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon fil...A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam evaporator.This wafer is bonded with other silicon wafer with a thermal oxide layer at room temperature.The bonded pairs are split along the porous silicon layer during subsequent thermal annealing.Thus the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator structure.SEM,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.展开更多
In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a waf...In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a wafer-scale-based (WaferICTM) rapid prototyping platform for electronic systems. This technique will be embedded into the structure of the WaferIC, and will be used as a preventive measure to protect the wafer from possible damages that can be caused by excessive thermomechanical stress. The paper also presents spatial and spatiotemporal algorithms and the experimental results from an IR images collection campaign conducted using an IR camera.展开更多
The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wh...The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wheels respectively,are analyzed.In addition,considering the effects of grain size and grinding depth on surface grinding temperature during these two grinding processes,significant results and conclusions are obtained from experimental research.展开更多
The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyz...The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyzed. The results show that many microcracks, fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel. No obvious microstructure change exists. The amorphous layer with a thickness of about 100 nm, microcracks, high density dislocations, and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel. For the wafer ground by the #2000 grinding wheel, an amorphous layer of about 30 nm thickness, a polycrystalline silicon layer, a few dislocations, and an elastic deformation layer exist. In general, with the decrease in grit size, the material removal mode changes from micro-fracture mode to ductile mode gradually.展开更多
Single-crystal silicon is an important material in the semiconductor and optical industries.However,being hard and brittle,a silicon wafer is vulnerable to subsurface cracks(SSCs)during grinding,which is detrimental t...Single-crystal silicon is an important material in the semiconductor and optical industries.However,being hard and brittle,a silicon wafer is vulnerable to subsurface cracks(SSCs)during grinding,which is detrimental to the performance and lifetime of a wafer product.Therefore,studying the formation of SSCs is important for optimizing SSC-removal processes and thus improving surface integrity.In this study,a statistical method is used to study the formation of SSCs induced during grinding of silicon wafers.The statistical results show that grinding-induced SSCs are not stochastic but anisotropic in their distributions.Generally,when grinding with coarse abrasive grains,SSCs form along the cleavage planes,primarily the{111}planes.However,when grinding with finer abrasive grains,SSCs tend to form along planes with a fracture-surface energy higher than that of the cleavage planes.These findings provide a guidance for the accurate detection of SSCs in ground silicon wafers.展开更多
Compared with traditional mechanical seals,magnetic fluid seals have unique characters of high airtightness,minimal friction torque requirements,pollution-free and long life-span,widely used in vacuum robots.With the ...Compared with traditional mechanical seals,magnetic fluid seals have unique characters of high airtightness,minimal friction torque requirements,pollution-free and long life-span,widely used in vacuum robots.With the rapid development of Integrate Circuit（IC）,there is a stringent requirement for sealing wafer-handling robots when working in a vacuum environment.The parameters of magnetic fluid seals structure is very important in the vacuum robot design.This paper gives a magnetic fluid seal device for the robot.Firstly,the seal differential pressure formulas of magnetic fluid seal are deduced according to the theory of ferrohydrodynamics,which indicate that the magnetic field gradient in the sealing gap determines the seal capacity of magnetic fluid seal.Secondly,the magnetic analysis model of twin-shaft magnetic fluid seals structure is established.By analyzing the magnetic field distribution of dual magnetic fluid seal,the optimal value ranges of important parameters,including parameters of the permanent magnetic ring,the magnetic pole tooth,the outer shaft,the outer shaft sleeve and the axial relative position of two permanent magnetic rings,which affect the seal differential pressure,are obtained.A wafer-handling robot equipped with coaxial twin-shaft magnetic fluid rotary seals and bellows seal is devised and an optimized twin-shaft magnetic fluid seals experimental platform is built.Test result shows that when the speed of the two rotational shafts ranges from 0-500 r/min,the maximum burst pressure is about 0.24 MPa.Magnetic fluid rotary seals can provide satisfactory performance in the application of wafer-handling robot.The proposed coaxial twin-shaft magnetic fluid rotary seal provides the instruction to design high-speed vacuum robot.展开更多
Grinding residual stresses of silicon wafers affect the performance of IC circuits. Based on the wafer rotation ultra-precision grinding ma-chine, the residual stress distribution along grinding marks and ground surfa...Grinding residual stresses of silicon wafers affect the performance of IC circuits. Based on the wafer rotation ultra-precision grinding ma-chine, the residual stress distribution along grinding marks and ground surface layer depth of the ground wafers are investigated using Raman microspectroscopy. The results show that the ground wafer surfaces mainly present compressive stress. The vicinity of pile-ups between two grinding marks presents higher a compressive stress. The stress value of the rough ground wafer is the least because the material is removed by the brittle fracture mode. The stress of the semi-fine ground wafer is the largest because the wafer surface presents stronger phase trans-formations and elastic-plastic deformation. The stress of the fine ground wafer is between the above two. The strained layer depths for the rough, semi-fine, and fine ground wafers are about 7.6 m, 2.6 m, and 1.1 m, respectively. The main reasons for generation of residual stresses are phase transformations and elastic-plastic deformation.展开更多
The p-GaAs/n-InP heterojunction was fabricated by direct wafer bonding technology. The optimized atomic level contact between GaAs and InP is critical for getting good ohmic contact and removing the bubbles or voids a...The p-GaAs/n-InP heterojunction was fabricated by direct wafer bonding technology. The optimized atomic level contact between GaAs and InP is critical for getting good ohmic contact and removing the bubbles or voids at the interface, which is helpful to enhance the efficiency of wafer bonded multi-junction solar cells. Through the surface megasonic cleaning and the plasma treatment, we have achieved the high quality bonding interface without bubbles or voids and with interface resistivity of about 0.1 ohms/cm^2. A GaInP/GaAs//InGaAsP/InGaAs 4-junction solar cell was prepared with the high efficiency of 34.4%(AM0)at 1 sun.展开更多
CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were investigated.The surface damages are mainly induced by three-body abrasive wear and embedded abra...CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were investigated.The surface damages are mainly induced by three-body abrasive wear and embedded abrasive wear during lapping process.A new damage type,which is induced by the indentation of embedded abrasives,is found in the subsurface.When a floss pad is used to replace the lapping plate during machining,the surface damage is mainly induced by two-body abrasive and three-body abrasive wear,and the effect of embedded abrasives on the surface is greatly weakened.Moreover,this new damage type nearly disappears on the subsurface.展开更多
The prediction of indentation depth of abrasive grain in hydrophilic fixed-abrasive(FA)lapping is crucial for controlling material removal rate and surface quality of the work-piece being machined.By applying the theo...The prediction of indentation depth of abrasive grain in hydrophilic fixed-abrasive(FA)lapping is crucial for controlling material removal rate and surface quality of the work-piece being machined.By applying the theory of contact mechanics,a theoretical model of the indentation depth of abrasive grain was developed and the relationships between indentation depth and properties of contact pairs and abrasive back-off were studied.Also,the average surface roughness(Ra)of lapped wafer was approximately calculated according to the obtained indentation depth.To verify the rationality of the proposed model,a series of lapping experiments on lithium niobate(LN)wafers were carried out,whose average surface roughness Ra was measured by atomic force microscope(AFM).The experimental results were coincided with the theoretical predictions,verifying the rationality of the proposed model.It is concluded that the indentation depth of the fixed abrasive was primarily affected by the applied load,wafer micro hardness and pad Young′s modulus and so on.Moreover,the larger the applied load,the more significant the back-off of the abrasive grain.The model established in this paper is helpful to the design of FA pad and its machining parameters,and the prediction of Ra as well.展开更多
基金Project (50975040) supported by the National Natural Science Foundation of China
文摘Nanogrinding of SiC wafers with high flatness and low subsurface damage was proposed and nanogrinding experiments were carried out on an ultra precision grinding machine with fine diamond wheels. Experimental results show that nanogrinding can produce flatness less than 1.0μm and a surface roughness Ra of 0.42nm. It is found that nanogrinding is capable of producing much flatter SiC wafers with a lower damage than double side lapping and mechanical polishing in much less time and it can replace double side lapping and mechanical polishing and reduce the removal amount of chemical mechanical polishing.
基金Projects(51475072,51171036)supported by the National Natural Science Foundation of China
文摘To reveal the drop failure modes of the wafer level chip scale packages （WLCSPs） with Sn-3.0Ag-0.5Cu solder joints, board level drop tests were performed according to the JEDEC standard. Six failure modes were identified, i.e., short FR-4 cracks and complete FR-4 cracks at the printing circuit board （PCB） side, split between redistribution layer （RDL） and Cu under bump metallization （UBM）, RDL fracture, bulk cracks and partial bulk and intermetallic compound （IMC） cracks at the chip side. For the outmost solder joints, complete FR-4 cracks tended to occur, due to large deformation of PCB and low strength of FR-4 dielectric layer. The formation of complete FR-4 cracks largely absorbed the impact energy, resulting in the absence of other failure modes. For the inner solder joints, the absorption of impact energy by the short FR-4 cracks was limited, resulting in other failure modes at the chip side.
文摘Peroxodiphosphate anion （a powerful oxidant） can be formed in a special water-based cleaning agent through an electrochemical reaction on boron-doped diamond electrodes. This electrochemical reaction was applied during the oxidation,decomposition, and removal of organic contaminations on a silicon wafer surface, and it was used as the first step in the diamond electrochemical cleaning technique （DECT）. The cleaning effects of DECT were compared with the RCA cleaning technique, including the silicon surface chemical composition that was observed with X-ray photoelectron spectroscopy and the morphology observed with atomic force microscopy. The measurement results show that the silicon surface cleaned by DECT has slightly less organic residue and lower micro-roughness,so the new technique is more effective than the RCA cleaning technique.
文摘We present an improved angle polishing method in which the end of the cover slice near the glue layer is beveled into a thin,defect-free wedge,the straight edge of which is used as the datum for measuring the depth of subsurface damage. The bevel angle can be calculated from the interference fringes formed in the wedge. The minimum depth of the subsurface damage that can be measured by this method is a few hundred nanometers. Our results show that the method is straightforward, accurate, and convenient.
文摘The effect of rapid thermal annealing （RTA） ambient on denuded zone and oxygen precipitates in Czochralski （CZ） silicon wafers is studied in this paper. N2 and a N2/NH3 mixture are used as RTA ambient. It is demonstrated that a high density of oxygen precipitates and thin denuded zone are obtained in N2/NH3 ambient,while a relatively lower density of oxygen precipitates and thicker denuded zone are observed in N2 ambient. As the RTA duration times increased, the oxygen precipitate density increased and the denuded zone depth decreased. X-ray photoelectron spectroscopy （XPS） data and atomic force microscope （AFM） results show that there RTA process,which can explain the different effect of RTA was a surface nitriding reaction during the N2/NH3 ambient ambient.
文摘A double layered porous silicon with different porosity is formed on a heavy doped p type Si(111) substrate by changing current density during the anodizing.Then a high quality epitaxial mono crystalline silicon film is grown on the porous silicon using an ultra high vacuum electron beam evaporator.This wafer is bonded with other silicon wafer with a thermal oxide layer at room temperature.The bonded pairs are split along the porous silicon layer during subsequent thermal annealing.Thus the epitaxial Si film is transferred to the oxidized wafer to form a silicon on insulator structure.SEM,XTEM,spreading resistance probe and Hall measurement show that the SOI structure has good structural and electrical quality.
文摘In this paper, we describe a new silicon-die thermal monitoring approach using spatiotemporal signal processing technique for Wafer-Scale IC thermome- chanical stress monitoring. It is proposed in the context of a wafer-scale-based (WaferICTM) rapid prototyping platform for electronic systems. This technique will be embedded into the structure of the WaferIC, and will be used as a preventive measure to protect the wafer from possible damages that can be caused by excessive thermomechanical stress. The paper also presents spatial and spatiotemporal algorithms and the experimental results from an IR images collection campaign conducted using an IR camera.
基金Supported by the Open L ab.Foundation of Educational Ministryof China
文摘The surface grinding temperature of the silicon wafer ground by diamond wheels is studied.Rudimentally,the properties of the surface grinding temperature generated by two grinding methods,ground by straight and cup wheels respectively,are analyzed.In addition,considering the effects of grain size and grinding depth on surface grinding temperature during these two grinding processes,significant results and conclusions are obtained from experimental research.
基金This study was financially supported by the National Natural Science Foundation of China in Major Project Program (No. 50390061)the National Science Fund for Distinguished Young Scholars (No. 50325518).
文摘The depth and nature of the subsurface damage in a silicon wafer will limit the performance of IC components. Damage microstructures of the silicon wafers ground by the #325, #600, and #2000 grinding wheels was analyzed. The results show that many microcracks, fractures, and dislocation rosettes appear in the surface and subsurface of the wafer ground by the #325 grinding wheel. No obvious microstructure change exists. The amorphous layer with a thickness of about 100 nm, microcracks, high density dislocations, and polycrystalline silicon are observed in the subsurface of the wafer ground by the #600 grinding wheel. For the wafer ground by the #2000 grinding wheel, an amorphous layer of about 30 nm thickness, a polycrystalline silicon layer, a few dislocations, and an elastic deformation layer exist. In general, with the decrease in grit size, the material removal mode changes from micro-fracture mode to ductile mode gradually.
基金Financial supports from the National Natural Science Foundation of China (Grants No.51575084)the Science Fund for Creative Research Groups of NSFC (Grants No.51621064) are gratefully acknowledged
文摘Single-crystal silicon is an important material in the semiconductor and optical industries.However,being hard and brittle,a silicon wafer is vulnerable to subsurface cracks(SSCs)during grinding,which is detrimental to the performance and lifetime of a wafer product.Therefore,studying the formation of SSCs is important for optimizing SSC-removal processes and thus improving surface integrity.In this study,a statistical method is used to study the formation of SSCs induced during grinding of silicon wafers.The statistical results show that grinding-induced SSCs are not stochastic but anisotropic in their distributions.Generally,when grinding with coarse abrasive grains,SSCs form along the cleavage planes,primarily the{111}planes.However,when grinding with finer abrasive grains,SSCs tend to form along planes with a fracture-surface energy higher than that of the cleavage planes.These findings provide a guidance for the accurate detection of SSCs in ground silicon wafers.
基金supported by National Natural Science Foundation of China (Grant No. 50675027)
文摘Compared with traditional mechanical seals,magnetic fluid seals have unique characters of high airtightness,minimal friction torque requirements,pollution-free and long life-span,widely used in vacuum robots.With the rapid development of Integrate Circuit（IC）,there is a stringent requirement for sealing wafer-handling robots when working in a vacuum environment.The parameters of magnetic fluid seals structure is very important in the vacuum robot design.This paper gives a magnetic fluid seal device for the robot.Firstly,the seal differential pressure formulas of magnetic fluid seal are deduced according to the theory of ferrohydrodynamics,which indicate that the magnetic field gradient in the sealing gap determines the seal capacity of magnetic fluid seal.Secondly,the magnetic analysis model of twin-shaft magnetic fluid seals structure is established.By analyzing the magnetic field distribution of dual magnetic fluid seal,the optimal value ranges of important parameters,including parameters of the permanent magnetic ring,the magnetic pole tooth,the outer shaft,the outer shaft sleeve and the axial relative position of two permanent magnetic rings,which affect the seal differential pressure,are obtained.A wafer-handling robot equipped with coaxial twin-shaft magnetic fluid rotary seals and bellows seal is devised and an optimized twin-shaft magnetic fluid seals experimental platform is built.Test result shows that when the speed of the two rotational shafts ranges from 0-500 r/min,the maximum burst pressure is about 0.24 MPa.Magnetic fluid rotary seals can provide satisfactory performance in the application of wafer-handling robot.The proposed coaxial twin-shaft magnetic fluid rotary seal provides the instruction to design high-speed vacuum robot.
基金support of the Joint Fund of NSFC with Guangdong (No.U0734008)the National Natural Science Foundation of China (No.51075125)the Research Project Program of Natural Science of the Education Department of Henan Province (No.2011A460012)
文摘Grinding residual stresses of silicon wafers affect the performance of IC circuits. Based on the wafer rotation ultra-precision grinding ma-chine, the residual stress distribution along grinding marks and ground surface layer depth of the ground wafers are investigated using Raman microspectroscopy. The results show that the ground wafer surfaces mainly present compressive stress. The vicinity of pile-ups between two grinding marks presents higher a compressive stress. The stress value of the rough ground wafer is the least because the material is removed by the brittle fracture mode. The stress of the semi-fine ground wafer is the largest because the wafer surface presents stronger phase trans-formations and elastic-plastic deformation. The stress of the fine ground wafer is between the above two. The strained layer depths for the rough, semi-fine, and fine ground wafers are about 7.6 m, 2.6 m, and 1.1 m, respectively. The main reasons for generation of residual stresses are phase transformations and elastic-plastic deformation.
基金supported by the Shanghai Rising-Star Program (No. 14QB1402800)
文摘The p-GaAs/n-InP heterojunction was fabricated by direct wafer bonding technology. The optimized atomic level contact between GaAs and InP is critical for getting good ohmic contact and removing the bubbles or voids at the interface, which is helpful to enhance the efficiency of wafer bonded multi-junction solar cells. Through the surface megasonic cleaning and the plasma treatment, we have achieved the high quality bonding interface without bubbles or voids and with interface resistivity of about 0.1 ohms/cm^2. A GaInP/GaAs//InGaAsP/InGaAs 4-junction solar cell was prepared with the high efficiency of 34.4%(AM0)at 1 sun.
基金support from the Key Project of the National Natural Science Foundation of China (No. 50535020)
文摘CdZnTe wafers were machined by lapping and mechanical polishing processes,and their surface and subsurface damages were investigated.The surface damages are mainly induced by three-body abrasive wear and embedded abrasive wear during lapping process.A new damage type,which is induced by the indentation of embedded abrasives,is found in the subsurface.When a floss pad is used to replace the lapping plate during machining,the surface damage is mainly induced by two-body abrasive and three-body abrasive wear,and the effect of embedded abrasives on the surface is greatly weakened.Moreover,this new damage type nearly disappears on the subsurface.
基金supported by the Science Foundation of Aviation(No.2014ZE52055)the National Science Foundation of China(No.51675276)+1 种基金the Funding of Jiangsu Innovation Program for Graduate Education(No.KYLX_0231)the Fundamental Research Funds for the Central Universities
文摘The prediction of indentation depth of abrasive grain in hydrophilic fixed-abrasive(FA)lapping is crucial for controlling material removal rate and surface quality of the work-piece being machined.By applying the theory of contact mechanics,a theoretical model of the indentation depth of abrasive grain was developed and the relationships between indentation depth and properties of contact pairs and abrasive back-off were studied.Also,the average surface roughness(Ra)of lapped wafer was approximately calculated according to the obtained indentation depth.To verify the rationality of the proposed model,a series of lapping experiments on lithium niobate(LN)wafers were carried out,whose average surface roughness Ra was measured by atomic force microscope(AFM).The experimental results were coincided with the theoretical predictions,verifying the rationality of the proposed model.It is concluded that the indentation depth of the fixed abrasive was primarily affected by the applied load,wafer micro hardness and pad Young′s modulus and so on.Moreover,the larger the applied load,the more significant the back-off of the abrasive grain.The model established in this paper is helpful to the design of FA pad and its machining parameters,and the prediction of Ra as well.
