As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM c...As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.展开更多
Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial ...Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional(2D) ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP_(2)S_(6)/α-In_(2)Se_(3)/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP_(2)S_(6)/α-In_(2)Se_(3) heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In_(2)Se_(3). Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.展开更多
The magnons(the quanta of collective spin-wave excitations)in two-dimensional van der Waals(vd W)magnets exhibit some intriguing characteristics,such as spin Nernst effect,topological magnons,Weyl magnons,moiréma...The magnons(the quanta of collective spin-wave excitations)in two-dimensional van der Waals(vd W)magnets exhibit some intriguing characteristics,such as spin Nernst effect,topological magnons,Weyl magnons,moirémagnons,magnon valley Hall effect,etc.,and can be regulated through approaches such as stacking,electric doping,pressure,strain and twisting,opening unprecedented avenues to explore fundamental magnetic physics and spin-based technologies.Over the past few years,intense research efforts have been invested in unraveling magnon properties in vd W materials.This review comprehensively summarizes recent advancements in understanding magnons in vd W magnetic systems,spanning fundamental theories and experimental frontiers.It also introduces the experimental techniques widely used in this field,including inelastic neutron scattering,Raman/Brillouin spectroscopy,time-resolved spectroscopy and inelastic magnetotunneling spectroscopy,and discusses the coupling between magnons and other excitations,such as phonons and excitons.展开更多
Two-dimensional van der Waals ferromagnet Fe_(3)GeTe_(2)(FGT)holds a great potential for applications in spintronic devices due to its high Curie temperature,easy tunability,and excellent structural stability in air.T...Two-dimensional van der Waals ferromagnet Fe_(3)GeTe_(2)(FGT)holds a great potential for applications in spintronic devices due to its high Curie temperature,easy tunability,and excellent structural stability in air.Theoretical studies have shown that pressure,as an external parameter,significantly affects its ferromagnetic properties.In this study,we have performed comprehensive high-pressure neutron powder diffraction(NPD)experiments on FGT up to 5 GPa to investigate the evolution of its structural and magnetic properties with hydrostatic pressure.The NPD data clearly reveal the robustness of the ferromagnetism in FGT,despite of an apparent suppression by hydrostatic pressure.As the pressure increases from 0 to 5 GPa,the Curie temperature is found to decrease monotonically from 225(5)K to 175(5)K,together with a dramatically suppressed ordered moment of Fe,which is well supported by the first-principles calculations.Although no pressure-driven structural phase transition is observed up to 5 GPa,quantitative analysis on the changes of bond lengths and bond angles indicates a significant modification of the exchange interactions,which accounts for the pressure-induced suppression of the ferromagnetism in FGT.展开更多
The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typicall...The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typically achieved via ionic gating)to shift the vHS to the Fermi level provides a general mechanism for engineering such magnetism,its volatile nature often leads to the collapse of induced states upon gate field removal.Here,a novel scheme is presented for non-volatile magnetic control by utilizing ferroelectric heterostructures to achieve reversible magnetism switching.Using two-dimensional VSiN_(3),a nonmagnetic material with Mexican-hat electronic band dispersions hosting vHSs,as a prototype,it is preliminarily demonstrated that both electron and hole doping can robustly induce magnetism.Further,by interfacing VSiN_(3)with ferroelectric Sc_(2)CO_(2),reversible switching of its magnetic state via polarization-driven heterointerfacial charge transfer is achieved.This mechanism enables a dynamic transition between insulating and half-metallic phases in VSiN_(3),establishing a pathway to design multiferroic tunnel junctions with giant tunneling electroresistance or magnetoresistance.This work bridges non-volatile ferroelectric control with vHS-enhanced magnetism,opening opportunities for energy-efficient and high-performance spintronic devices and non-volatile memory devices.展开更多
Self-intercalated van der Waals magnets,characterized by self-intercalating native atoms into van der Waals layered structures with intrinsic magnetism,exhibit a variety of novel physical properties.Here,using first-p...Self-intercalated van der Waals magnets,characterized by self-intercalating native atoms into van der Waals layered structures with intrinsic magnetism,exhibit a variety of novel physical properties.Here,using first-principles calculations and Monte Carlo simulations,we report a self-intercalated van der Waals ferromagnet,Cr_(3)Ge_(2)Te_(6),which has a high Curie temperature of 492 K.We find that Cr_(3)Ge_(2)Te_(6)is nearly half-metallic with a spin polarization reaching up to 90.9%.Due to the ferromagnetism and strong spin-orbit coupling effect in Cr_(3)Ge_(2)Te_(6),a large anomalous Hall conductivity of 138Ω^(-1)·cm^(-1)and 305Ω^(-1)·cm^(-1)can be realized when its magnetization is along its magnetic easy axis and hard axis,respectively.By doping electrons(holes)into Cr_(3)Ge_(2)Te_(6),these anomalous Hall conductivities can be increased up to 318Ω^(-1)·cm^(-1)(648Ω^(-1)·cm^(-1)).Interestingly,a five-layer Cr_(3)Ge_(2)Te_(6)thin film retains room-temperature ferromagnetism with a higher spin polarization and larger anomalous Hall conductivity.Our study demonstrates that Cr_(3)Ge_(2)Te_(6)is a novel room-temperature self-intercalated ferromagnet with high-spin polarization and large anomalous Hall conductivity,offering great opportunities for designing nano-scale electronic devices.展开更多
Spin waves in van der Waals magnets hold promise for magnonic devices and circuits down to the two-dimensional limit.However,their short decay lengths pose challenges for practical applications.Here,we report on a mat...Spin waves in van der Waals magnets hold promise for magnonic devices and circuits down to the two-dimensional limit.However,their short decay lengths pose challenges for practical applications.Here,we report on a material platform consisting of a van der Waals magnet,Fe_(5)GeTe_(2)(FGT),and a ferrimagnetic insulator of yttrium iron garnet,Y_(3)Fe_(5)O_(12)(YIG),which supports the low-loss propagation of spin waves.Using broadband spin-wave spectroscopy,we observed an increase in spin-wave group velocity with decreasing temperature,which peaks at 30 K in the YIG and FGT/YIG films.This effect is ascribed to a change in the saturation magnetization of YIG and FGT/YIG at low temperature,resulting in a change in the spin-wave dispersion relations.Using micromagnetic simulations,we further investigated spin-wave propagation in an FGT/YIG bilayer and revealed a longer spin-wave decay length in the bilayer than in a single FGT layer,which is due to the lower effective damping in the bilayer.Moreover,asymmetric spin-wave dispersion,induced by a chiral dipolar interaction between the YIG and FGT layers,enables nonreciprocal control of spin-wave propagation.展开更多
Current studies on carbon nanotube (CNT) size effects predominantly employ Eringen’s differential nonlocal model, which is widely recognized as ill-suited for bounded domains. This paper investigates the free vibrati...Current studies on carbon nanotube (CNT) size effects predominantly employ Eringen’s differential nonlocal model, which is widely recognized as ill-suited for bounded domains. This paper investigates the free vibration of multi-walled CNTs (MWCNTs) with mathematically well-posed two-phase strain-driven and stress-driven nonlocal integral models incorporating the bi-Helmholtz kernel. The van der Waals (vdW) forces coupling MWCNT layers are similarly modeled as size-dependent via the bi-Helmholtz two-phase nonlocal integral framework. Critically, conventional pure strain-driven or stress-driven formulations become over-constrained when nonlocal vdW interactions are considered. The two-phase strategy resolves this limitation by enabling consistent coupling. Each bi-Helmholtz integral constitutive equation is equivalently transformed into a differential form requiring four additional constitutive boundary conditions (CBCs). The numerical solutions are obtained with the generalized differential quadrature method (GDQM) for these coupled higher-order equations. The parametric studies on double-walled CNTs (DWCNTs) and triple-walled CNTs (TWCNTs) elucidate the nonlocal effects predicted by both formulations. Additionally, the influence of nonlocal parameters within vdW forces is systematically evaluated to comprehensively characterize the size effects in MWCNTs.展开更多
研究了修正的等熵Van der Waals气体动力学Euler方程Riemann问题及其基本波的相互作用.利用Maxwell提出的等面积法则,将Van der Waals气体状态方程修正为与实际相符,从而守恒律方程组从混合型转化为双曲型.利用广义特征线分析法,构造性...研究了修正的等熵Van der Waals气体动力学Euler方程Riemann问题及其基本波的相互作用.利用Maxwell提出的等面积法则,将Van der Waals气体状态方程修正为与实际相符,从而守恒律方程组从混合型转化为双曲型.利用广义特征线分析法,构造性地得到了Riemann问题的解是存在的.进一步,得到了基本波相互作用.展开更多
Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable displays...Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable displays.Traditional bulk-material-based flexible devices considerably rely on lattice-matched crystal structures and are usually plagued by unavoidable chemical disorders at the interface.Two-dimensional van der Waals materials(2D VdWMs)have exceptional multifunctional properties,including large specific area,dangling-bond-free interface,plane-to-plane van der Waals interactions,and excellent mechanical,electrical,and optical properties.Thus,2D VdWMs have considerable application potential in functional intelligent flexible devices.To utilize the unique properties of 2D VdWMs and their van der Waals heterostructures,new designs and configurations of electronics and optoelectronics have emerged.However,these new designs and configurations do not consider lattice mismatch and process incompatibility issues.In this review,we summarized the recently reported 2D VdWM-based flexible electronic and optoelectronic devices with various functions thoroughly.Moreover,we identified the challenges and opportunities for further applications of 2D VdWM-based flexible electronics and optoelectronics.展开更多
讨论了一维可压缩黏性van der Waals流体系统的渐近稳定性,其中黏性系数为满足Bird-Carreau模型的非线性函数,压力为非凸函数。通过构造能量函数并运用能量估计方法及单调算子理论,证明得出:大黏性条件下初值位于稳定区域时,以及大黏性...讨论了一维可压缩黏性van der Waals流体系统的渐近稳定性,其中黏性系数为满足Bird-Carreau模型的非线性函数,压力为非凸函数。通过构造能量函数并运用能量估计方法及单调算子理论,证明得出:大黏性条件下初值位于稳定区域时,以及大黏性、小扰动条件下初值位于亚稳定区域时,该类van der Waals流体的解是渐近稳定的。展开更多
Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic de...Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.展开更多
基于流体体积分数的混合型多流体数值模型,将Piecewise Parabolic Method(PPM)方法应用于可压缩多流体流动的数值模拟,采用双波近似求解多流体van der Waals状态方程的Riemann问题.模拟高密度比且含有激波的可压缩多流体流动,典型的纯...基于流体体积分数的混合型多流体数值模型,将Piecewise Parabolic Method(PPM)方法应用于可压缩多流体流动的数值模拟,采用双波近似求解多流体van der Waals状态方程的Riemann问题.模拟高密度比且含有激波的可压缩多流体流动,典型的纯界面平移问题模拟结果表明,在接触间断的界面附近,压力和速度没有任何的振荡且界面数值耗散都被控制在2-3个网格之内;一维和二维算例表明,该数值方法可以有效地处理接触间断、激波和多维滑移线等物理问题,并能够比其它多流体数值方法更精细地模拟多流体交界面.展开更多
Photocatalytic reduction of CO_(2) into valuable fuels is one of the potential strategies to solve the carbon cycle and energy crisis.Graphitic carbon nitride(g-C_(3)N_(4)),as a typical two-dimensional(2D)semiconducto...Photocatalytic reduction of CO_(2) into valuable fuels is one of the potential strategies to solve the carbon cycle and energy crisis.Graphitic carbon nitride(g-C_(3)N_(4)),as a typical two-dimensional(2D)semiconductor with a bandgap of∼2.7 eV,has attracted wide attention in photocatalytic CO_(2) reduction.However,the performance of g-C_(3)N_(4) is greatly limited by the rapid recombination of photogenerated charge carriers and weak CO_(2) activation capacity.Construction of van der Waals heterostructure with the maximum interface contact area can improve the transfer/seperation efficiency of interface charge carriers.Ultrathin metal antimony(Sb)nanosheet(antimonene)with high carrier mobility and 2D layered structure,is a good candidate material to construct 2D/2D Sb/g-C_(3)N_(4) van der Waals heterostructure.In this work,the density functional theory(DFT)calculations indicated that antimonene has higher carrier mobility than g-C_(3)N_(4) nanosheets.Obvious charge transfer and in-plane structure distortion will occur at the interface of Sb/g-C_(3)N_(4),which endow stronger CO_(2) activation ability on di-coordinated N active site.The ultrathin g-C_(3)N_(4) and antimonene nanosheets were prepared by ultrasonic exfoliation method,and Sb/g-C_(3)N_(4) van der Waals heterostructures were constructed by self-assembly process.The photoluminescence(PL)and time-resolved photoluminescence(TRPL)indicated that the Sb/g-C_(3)N_(4) van der Waals heterostructures have a better photogenerated charge separation efficiency than pure g-C_(3)N_(4) nanosheets.In-situ FTIR spectroscopy demonstrated a stronger ability of CO_(2) activation to^ (∗)COOH on Sb/g-C_(3)N_(4) van der Waals heterostructure.As a result,the Sb/g-C_(3)N_(4) van der Waals heterostructures showed a higher CO yield with 2.03 umol g^(−1) h^(−1),which is 3.2 times that of pure g-C_(3)N_(4).This work provides a reference for activating CO_(2) and promoting CO_(2) reduction by van der Waals heterostructure.展开更多
Reducing CO_(2) to hydrocarbon fuels by solar irradiation provides a feasible channel for mitigating excessive CO_(2) emissions and addressing resource depletion.Nevertheless,severe charge recombi‐nation and the high...Reducing CO_(2) to hydrocarbon fuels by solar irradiation provides a feasible channel for mitigating excessive CO_(2) emissions and addressing resource depletion.Nevertheless,severe charge recombi‐nation and the high energy barrier for CO_(2) photoreduction on the surface of photocatalysts com‐promise the catalytic performance.Herein,a 2D/2D Bi_(2)MoO_(6)/BiOI composite was fabricated to achieve improved CO_(2) photoreduction efficiency.Charge transfer in the composite was facilitated by the van der Waals heterojunction with a large‐area interface.Work function calculation demon‐strated that S‐scheme charge transfer is operative in the composite,and effective charge separation and strong redox capability were revealed by time‐resolved photoluminescence and electron para‐magnetic resonance spectroscopy.Moreover,the intermediates of CO_(2) photoreduction were identi‐fied based on the in situ diffuse reflectance infrared Fourier‐transform spectra.Density functional theory calculations showed that CO_(2) hydrogenation is the rate‐determining step for yielding CH_(4) and CO.Introducing Bi_(2)MoO_(6) into the composite further decreased the energy barrier for CO_(2) photoreduction on BiOI by 0.35 eV.This study verifies the synergistic effect of the S‐scheme heterojunction and van der Waals heterojunction in the 2D/2D composite.展开更多
基金supported by the National Key Research&Development Projects of China(Grant No.2022YFA1204100)National Natural Science Foundation of China(Grant No.62488201)+1 种基金CAS Project for Young Scientists in Basic Research(YSBR-003)the Innovation Program of Quantum Science and Technology(2021ZD0302700)。
文摘As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.
基金supported by the Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-049)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302800)the Fundamental Research Funds for the Central Universities(Grant No.WK3510000013)。
文摘Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional(2D) ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP_(2)S_(6)/α-In_(2)Se_(3)/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP_(2)S_(6)/α-In_(2)Se_(3) heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In_(2)Se_(3). Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.
基金the Chinese Academy of Sciences—the Scientific and the CAS Project for Young Scientists in Basic Research(Grant No.YSBR-120)the National Science Foundation of China(Grant No.NSFC12525405)。
文摘The magnons(the quanta of collective spin-wave excitations)in two-dimensional van der Waals(vd W)magnets exhibit some intriguing characteristics,such as spin Nernst effect,topological magnons,Weyl magnons,moirémagnons,magnon valley Hall effect,etc.,and can be regulated through approaches such as stacking,electric doping,pressure,strain and twisting,opening unprecedented avenues to explore fundamental magnetic physics and spin-based technologies.Over the past few years,intense research efforts have been invested in unraveling magnon properties in vd W materials.This review comprehensively summarizes recent advancements in understanding magnons in vd W magnetic systems,spanning fundamental theories and experimental frontiers.It also introduces the experimental techniques widely used in this field,including inelastic neutron scattering,Raman/Brillouin spectroscopy,time-resolved spectroscopy and inelastic magnetotunneling spectroscopy,and discusses the coupling between magnons and other excitations,such as phonons and excitons.
基金Project supported by the National Natural Science Foundation of China(Grant No.12074023)the Large Scientific Facility Open Subject of Songshan Lake(Grant No.KFKT2022B05)+1 种基金the Fundamental Research Funds for the Central Universities in ChinaNeutron diffraction experiments at the Materials and Life Science Experimental Facility of the J-PARC were performed through the user program(Proposal No.2023A0185).
文摘Two-dimensional van der Waals ferromagnet Fe_(3)GeTe_(2)(FGT)holds a great potential for applications in spintronic devices due to its high Curie temperature,easy tunability,and excellent structural stability in air.Theoretical studies have shown that pressure,as an external parameter,significantly affects its ferromagnetic properties.In this study,we have performed comprehensive high-pressure neutron powder diffraction(NPD)experiments on FGT up to 5 GPa to investigate the evolution of its structural and magnetic properties with hydrostatic pressure.The NPD data clearly reveal the robustness of the ferromagnetism in FGT,despite of an apparent suppression by hydrostatic pressure.As the pressure increases from 0 to 5 GPa,the Curie temperature is found to decrease monotonically from 225(5)K to 175(5)K,together with a dramatically suppressed ordered moment of Fe,which is well supported by the first-principles calculations.Although no pressure-driven structural phase transition is observed up to 5 GPa,quantitative analysis on the changes of bond lengths and bond angles indicates a significant modification of the exchange interactions,which accounts for the pressure-induced suppression of the ferromagnetism in FGT.
基金supported by the National Natural Science Foundation of China(Grant Nos.62174016,12474047,12204202,and 11974355)the Basic Research Program of Jiangsu(Grant No.BK20220679)+1 种基金the Fund for Shanxi“1331Project”the Research Project Supported by Shanxi Scholarship Council of China.
文摘The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typically achieved via ionic gating)to shift the vHS to the Fermi level provides a general mechanism for engineering such magnetism,its volatile nature often leads to the collapse of induced states upon gate field removal.Here,a novel scheme is presented for non-volatile magnetic control by utilizing ferroelectric heterostructures to achieve reversible magnetism switching.Using two-dimensional VSiN_(3),a nonmagnetic material with Mexican-hat electronic band dispersions hosting vHSs,as a prototype,it is preliminarily demonstrated that both electron and hole doping can robustly induce magnetism.Further,by interfacing VSiN_(3)with ferroelectric Sc_(2)CO_(2),reversible switching of its magnetic state via polarization-driven heterointerfacial charge transfer is achieved.This mechanism enables a dynamic transition between insulating and half-metallic phases in VSiN_(3),establishing a pathway to design multiferroic tunnel junctions with giant tunneling electroresistance or magnetoresistance.This work bridges non-volatile ferroelectric control with vHS-enhanced magnetism,opening opportunities for energy-efficient and high-performance spintronic devices and non-volatile memory devices.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFA1403301)the National Natural Science Foundation of China(Grant Nos.12474247 and 92165204)+1 种基金the Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(Grant No.2022B1212010008)the support from the Fundamental Research Funds for the Central Universities,Sun Yat-Sen University(Grant No.24qnpy108)。
文摘Self-intercalated van der Waals magnets,characterized by self-intercalating native atoms into van der Waals layered structures with intrinsic magnetism,exhibit a variety of novel physical properties.Here,using first-principles calculations and Monte Carlo simulations,we report a self-intercalated van der Waals ferromagnet,Cr_(3)Ge_(2)Te_(6),which has a high Curie temperature of 492 K.We find that Cr_(3)Ge_(2)Te_(6)is nearly half-metallic with a spin polarization reaching up to 90.9%.Due to the ferromagnetism and strong spin-orbit coupling effect in Cr_(3)Ge_(2)Te_(6),a large anomalous Hall conductivity of 138Ω^(-1)·cm^(-1)and 305Ω^(-1)·cm^(-1)can be realized when its magnetization is along its magnetic easy axis and hard axis,respectively.By doping electrons(holes)into Cr_(3)Ge_(2)Te_(6),these anomalous Hall conductivities can be increased up to 318Ω^(-1)·cm^(-1)(648Ω^(-1)·cm^(-1)).Interestingly,a five-layer Cr_(3)Ge_(2)Te_(6)thin film retains room-temperature ferromagnetism with a higher spin polarization and larger anomalous Hall conductivity.Our study demonstrates that Cr_(3)Ge_(2)Te_(6)is a novel room-temperature self-intercalated ferromagnet with high-spin polarization and large anomalous Hall conductivity,offering great opportunities for designing nano-scale electronic devices.
基金supported by the National Key Research and Development Program of China(Grant No.2022YFA1402400)the National Natural Science Foundation of China(Grant No.12374119)the support of the Center for Nanoscience and Nanotechnology and the Supercomputing Center at Wuhan University in China。
文摘Spin waves in van der Waals magnets hold promise for magnonic devices and circuits down to the two-dimensional limit.However,their short decay lengths pose challenges for practical applications.Here,we report on a material platform consisting of a van der Waals magnet,Fe_(5)GeTe_(2)(FGT),and a ferrimagnetic insulator of yttrium iron garnet,Y_(3)Fe_(5)O_(12)(YIG),which supports the low-loss propagation of spin waves.Using broadband spin-wave spectroscopy,we observed an increase in spin-wave group velocity with decreasing temperature,which peaks at 30 K in the YIG and FGT/YIG films.This effect is ascribed to a change in the saturation magnetization of YIG and FGT/YIG at low temperature,resulting in a change in the spin-wave dispersion relations.Using micromagnetic simulations,we further investigated spin-wave propagation in an FGT/YIG bilayer and revealed a longer spin-wave decay length in the bilayer than in a single FGT layer,which is due to the lower effective damping in the bilayer.Moreover,asymmetric spin-wave dispersion,induced by a chiral dipolar interaction between the YIG and FGT layers,enables nonreciprocal control of spin-wave propagation.
基金Project supported by the National Natural Science Foundation of China(Nos.12172169 and 12272064)the Natural Science Foundation of Jiangsu Province of China(No.BK20241773)the Priority Academic Program Development of Jiangsu Higher Education Institutions of China。
文摘Current studies on carbon nanotube (CNT) size effects predominantly employ Eringen’s differential nonlocal model, which is widely recognized as ill-suited for bounded domains. This paper investigates the free vibration of multi-walled CNTs (MWCNTs) with mathematically well-posed two-phase strain-driven and stress-driven nonlocal integral models incorporating the bi-Helmholtz kernel. The van der Waals (vdW) forces coupling MWCNT layers are similarly modeled as size-dependent via the bi-Helmholtz two-phase nonlocal integral framework. Critically, conventional pure strain-driven or stress-driven formulations become over-constrained when nonlocal vdW interactions are considered. The two-phase strategy resolves this limitation by enabling consistent coupling. Each bi-Helmholtz integral constitutive equation is equivalently transformed into a differential form requiring four additional constitutive boundary conditions (CBCs). The numerical solutions are obtained with the generalized differential quadrature method (GDQM) for these coupled higher-order equations. The parametric studies on double-walled CNTs (DWCNTs) and triple-walled CNTs (TWCNTs) elucidate the nonlocal effects predicted by both formulations. Additionally, the influence of nonlocal parameters within vdW forces is systematically evaluated to comprehensively characterize the size effects in MWCNTs.
文摘研究了修正的等熵Van der Waals气体动力学Euler方程Riemann问题及其基本波的相互作用.利用Maxwell提出的等面积法则,将Van der Waals气体状态方程修正为与实际相符,从而守恒律方程组从混合型转化为双曲型.利用广义特征线分析法,构造性地得到了Riemann问题的解是存在的.进一步,得到了基本波相互作用.
基金supported by the Natural Science Foundation of Beijing Municipality(No.Z180011)the National Natural Science Foundation of China(Nos.51991340,51991342,51972022,92163205,and 52188101)+2 种基金the National Key Research and Development Program of China(No.2016YFA0202701)the Fundamental Research Funds for the Central Universities(No.FRF-TP-19-025A3)the Overseas Expertise Introduction Projects for Discipline Innovation(No.B14003)。
文摘Flexible electronics and optoelectronics exhibit inevitable trends in next-generation intelligent industries,including healthcare and wellness,electronic skins,the automotive industry,and foldable or rollable displays.Traditional bulk-material-based flexible devices considerably rely on lattice-matched crystal structures and are usually plagued by unavoidable chemical disorders at the interface.Two-dimensional van der Waals materials(2D VdWMs)have exceptional multifunctional properties,including large specific area,dangling-bond-free interface,plane-to-plane van der Waals interactions,and excellent mechanical,electrical,and optical properties.Thus,2D VdWMs have considerable application potential in functional intelligent flexible devices.To utilize the unique properties of 2D VdWMs and their van der Waals heterostructures,new designs and configurations of electronics and optoelectronics have emerged.However,these new designs and configurations do not consider lattice mismatch and process incompatibility issues.In this review,we summarized the recently reported 2D VdWM-based flexible electronic and optoelectronic devices with various functions thoroughly.Moreover,we identified the challenges and opportunities for further applications of 2D VdWM-based flexible electronics and optoelectronics.
文摘讨论了一维可压缩黏性van der Waals流体系统的渐近稳定性,其中黏性系数为满足Bird-Carreau模型的非线性函数,压力为非凸函数。通过构造能量函数并运用能量估计方法及单调算子理论,证明得出:大黏性条件下初值位于稳定区域时,以及大黏性、小扰动条件下初值位于亚稳定区域时,该类van der Waals流体的解是渐近稳定的。
文摘Two-dimensional transition metal dichalcogenides heterostructures have stimulated wide in- terest not only for the fundamental research, but also for the application of next generation electronic and optoelectronic devices. Herein, we report a successful two-step chemical vapor deposition strategy to construct vertically stacked van der Waals epitaxial In2Se3/MoSe2 heterostructures. Transmission electron microscopy characterization reveals clearly that the In2Se3 has well-aligned lattice orientation with the substrate of monolayer MoSe2. Due to the interaction between the In2Se3 and MoSe2 layers, the heterostructure shows the quench- ing and red-shift of photoluminescence. Moreover, the current rectification behavior and photovoltaic effect can be observed from the heterostructure, which is attributed to the unique band structure alignment of the heterostructure, and is further confirmed by Kevin probe force microscopy measurement. The synthesis approach via van der Waals epitaxy in this work can expand the way to fabricate a variety of two-dimensional heterostructures for potential applications in electronic and optoelectronic devices.
文摘基于流体体积分数的混合型多流体数值模型,将Piecewise Parabolic Method(PPM)方法应用于可压缩多流体流动的数值模拟,采用双波近似求解多流体van der Waals状态方程的Riemann问题.模拟高密度比且含有激波的可压缩多流体流动,典型的纯界面平移问题模拟结果表明,在接触间断的界面附近,压力和速度没有任何的振荡且界面数值耗散都被控制在2-3个网格之内;一维和二维算例表明,该数值方法可以有效地处理接触间断、激波和多维滑移线等物理问题,并能够比其它多流体数值方法更精细地模拟多流体交界面.
基金supported by National Natural Science Foundation of China(Nos.22002189 and 51973078)the Open Project from Key Laboratory of Green and Precise Synthetic Chemistry and Applications(No.2020KF07)+1 种基金the Distinguished Young Scholar of Anhui Province(No.1808085J14)the Key Foundation of Educational Commission of Anhui Province(Nos.KJ2019A0595 and KJ2020ZD005)。
文摘Photocatalytic reduction of CO_(2) into valuable fuels is one of the potential strategies to solve the carbon cycle and energy crisis.Graphitic carbon nitride(g-C_(3)N_(4)),as a typical two-dimensional(2D)semiconductor with a bandgap of∼2.7 eV,has attracted wide attention in photocatalytic CO_(2) reduction.However,the performance of g-C_(3)N_(4) is greatly limited by the rapid recombination of photogenerated charge carriers and weak CO_(2) activation capacity.Construction of van der Waals heterostructure with the maximum interface contact area can improve the transfer/seperation efficiency of interface charge carriers.Ultrathin metal antimony(Sb)nanosheet(antimonene)with high carrier mobility and 2D layered structure,is a good candidate material to construct 2D/2D Sb/g-C_(3)N_(4) van der Waals heterostructure.In this work,the density functional theory(DFT)calculations indicated that antimonene has higher carrier mobility than g-C_(3)N_(4) nanosheets.Obvious charge transfer and in-plane structure distortion will occur at the interface of Sb/g-C_(3)N_(4),which endow stronger CO_(2) activation ability on di-coordinated N active site.The ultrathin g-C_(3)N_(4) and antimonene nanosheets were prepared by ultrasonic exfoliation method,and Sb/g-C_(3)N_(4) van der Waals heterostructures were constructed by self-assembly process.The photoluminescence(PL)and time-resolved photoluminescence(TRPL)indicated that the Sb/g-C_(3)N_(4) van der Waals heterostructures have a better photogenerated charge separation efficiency than pure g-C_(3)N_(4) nanosheets.In-situ FTIR spectroscopy demonstrated a stronger ability of CO_(2) activation to^ (∗)COOH on Sb/g-C_(3)N_(4) van der Waals heterostructure.As a result,the Sb/g-C_(3)N_(4) van der Waals heterostructures showed a higher CO yield with 2.03 umol g^(−1) h^(−1),which is 3.2 times that of pure g-C_(3)N_(4).This work provides a reference for activating CO_(2) and promoting CO_(2) reduction by van der Waals heterostructure.
文摘Reducing CO_(2) to hydrocarbon fuels by solar irradiation provides a feasible channel for mitigating excessive CO_(2) emissions and addressing resource depletion.Nevertheless,severe charge recombi‐nation and the high energy barrier for CO_(2) photoreduction on the surface of photocatalysts com‐promise the catalytic performance.Herein,a 2D/2D Bi_(2)MoO_(6)/BiOI composite was fabricated to achieve improved CO_(2) photoreduction efficiency.Charge transfer in the composite was facilitated by the van der Waals heterojunction with a large‐area interface.Work function calculation demon‐strated that S‐scheme charge transfer is operative in the composite,and effective charge separation and strong redox capability were revealed by time‐resolved photoluminescence and electron para‐magnetic resonance spectroscopy.Moreover,the intermediates of CO_(2) photoreduction were identi‐fied based on the in situ diffuse reflectance infrared Fourier‐transform spectra.Density functional theory calculations showed that CO_(2) hydrogenation is the rate‐determining step for yielding CH_(4) and CO.Introducing Bi_(2)MoO_(6) into the composite further decreased the energy barrier for CO_(2) photoreduction on BiOI by 0.35 eV.This study verifies the synergistic effect of the S‐scheme heterojunction and van der Waals heterojunction in the 2D/2D composite.
