We prepared thulium-doped tantalum (V) oxide (Ta2O5:Tm) thin films using co-sputtering of two Tm2O3 pellets and a Ta2O5 disc, and we observed photoluminescence (PL) peaks not only around a wavelength of 800 nm due to ...We prepared thulium-doped tantalum (V) oxide (Ta2O5:Tm) thin films using co-sputtering of two Tm2O3 pellets and a Ta2O5 disc, and we observed photoluminescence (PL) peaks not only around a wavelength of 800 nm due to the 3H4→3H6 transition of Tm3+ but also around a wavelength of 400 nm (violet) from the films after annealing for the first time. Comparatively narrow PL peaks around the wavelength of 400 nm were observed from the films annealed at 800°C and 900°C for 20 min. The peak intensity from the film annealed at 900°C was approximately four-times stronger than that from the film annealed at 800°C. The origin of the 400-nm peaks seems to be the same as our non-doped Ta2O5 thin films deposited using radio-frequency sputtering because we observe PL peaks around 400 - 430 nm from the Ta2O5 films. Such a Ta2O5:Tm co-sputtered thin film seems to be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.展开更多
以低温水热法制备了TiO2-SnO2复合纳米晶粒,采用提拉法涂敷于带有金电极的氧化铝陶瓷管表面形成敏感薄膜,设计了一种新型薄膜式臭氧传感器。采用 X 射线衍射仪、热场发射扫描电子显微镜、能量色散X 射线谱仪和紫外-可见光谱能谱仪,表征...以低温水热法制备了TiO2-SnO2复合纳米晶粒,采用提拉法涂敷于带有金电极的氧化铝陶瓷管表面形成敏感薄膜,设计了一种新型薄膜式臭氧传感器。采用 X 射线衍射仪、热场发射扫描电子显微镜、能量色散X 射线谱仪和紫外-可见光谱能谱仪,表征了TiO2-SnO2纳米晶粒的晶体结构和微观形貌。采用紫外-可见吸收光谱法和电化学方法,讨论了TiO2-SnO2纳米晶粒对臭氧敏感机理与光电化学特性。在气体传感器静态测试系统上,采用XEDWS-60A型气敏元件分析仪测试了紫外光下臭氧传感器敏感特性、动态响应、抗干扰和稳定性。结果表明,以Ti与Sn摩尔比为6的TiO2-SnO2纳米晶粒为敏感薄膜的臭氧传感器,在相对湿度为40%和温度为25℃条件下,臭氧浓度为0.1~1.8μg/L时,有、无紫外光照射的臭氧传感器线性度分别为97.5%和78.5%,动态响应分别为2和9 s,恢复时间分别为5.5和15 s。此传感器对CO、NOx、甲醛、丙酮、丁醇和甲醇等气体具有良好的抗干扰性能。在汽车上连续使用12个月后,响应衰减了4.7%,响应正常时间为8.5个月。展开更多
文摘We prepared thulium-doped tantalum (V) oxide (Ta2O5:Tm) thin films using co-sputtering of two Tm2O3 pellets and a Ta2O5 disc, and we observed photoluminescence (PL) peaks not only around a wavelength of 800 nm due to the 3H4→3H6 transition of Tm3+ but also around a wavelength of 400 nm (violet) from the films after annealing for the first time. Comparatively narrow PL peaks around the wavelength of 400 nm were observed from the films annealed at 800°C and 900°C for 20 min. The peak intensity from the film annealed at 900°C was approximately four-times stronger than that from the film annealed at 800°C. The origin of the 400-nm peaks seems to be the same as our non-doped Ta2O5 thin films deposited using radio-frequency sputtering because we observe PL peaks around 400 - 430 nm from the Ta2O5 films. Such a Ta2O5:Tm co-sputtered thin film seems to be used as a multi-functional coating film having both anti-reflection and down-conversion effects for realizing a high-efficiency silicon solar cell.
