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沙尘暴中多物理场的结构和耦合特征
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作者 张欢 《Acta Mechanica Sinica》 SCIE EI CAS CSCD 2024年第3期28-39,共12页
沙尘暴是典型的分散两相大气湍流,其中沙尘颗粒高度带电.虽然在单相高雷诺数湍流中已经确认存在超大尺度运动(very-large-scale motions,VLSMs),但在沙尘暴中,尤其是涉及湍动电场方面的研究还相对较少.在本文中,利用大气表面层内现场观... 沙尘暴是典型的分散两相大气湍流,其中沙尘颗粒高度带电.虽然在单相高雷诺数湍流中已经确认存在超大尺度运动(very-large-scale motions,VLSMs),但在沙尘暴中,尤其是涉及湍动电场方面的研究还相对较少.在本文中,利用大气表面层内现场观测数据,我们证明沙尘暴的风速、直径小于10微米的沙尘颗粒浓度(PM10沙尘浓度)和电场存在大致相同大小的VLSMs.此外,我们发现这些多物理场在VLSMs尺度上具有最大的线性耦合,线性相干谱在0.5–0.8之间.通过传递熵分析,我们进一步证明风速和PM10沙尘浓度在波数k_(1)=0.002 m^(-1)处具有最大的非线性耦合,而PM10沙尘浓度和电场在k_(1)=0.15 m^(-1)处具有最大的非线性耦合,这表明风场-粉尘和粉尘-静电相互作用之间存在不同的非线性耦合行为.我们的研究结果揭示了沙尘暴中多物理场的结构和耦合特征,从而为理解复杂的分散两相湍流流动提供了关键信息. 展开更多
关键词 very-large-scale motions Electric fields Particle-laden flow Dust storms
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Large eddy simulation of high-Reynolds-number atmospheric boundary layer flow with improved near-wall correction 被引量:2
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作者 Shengjun FENG Xiaojing ZHENG +1 位作者 Ruifeng HU Ping WANG 《Applied Mathematics and Mechanics(English Edition)》 SCIE EI CSCD 2020年第1期33-50,共18页
It is highly attractive to develop an efficient and flexible large eddy simulation(LES)technique for high-Reynolds-number atmospheric boundary layer(ABL)simulation using the low-order numerical scheme on a relatively ... It is highly attractive to develop an efficient and flexible large eddy simulation(LES)technique for high-Reynolds-number atmospheric boundary layer(ABL)simulation using the low-order numerical scheme on a relatively coarse grid,that could reproduce the logarithmic profile of the mean velocity and some key features of large-scale coherent structures in the outer layer.In this study,an improved near-wall correction scheme for the vertical gradient of the resolved streamwise velocity in the strain-rate tensor is proposed to calculate the eddy viscosity coefficient in the subgrid-scale(SGS)model.The LES code is realized with a second-order finite-difference scheme,the scale-dependent dynamic SGS stress model,the equilibrium wall stress model,and the proposed correction scheme.Very-high-Reynolds-number ABL flow simulation under the neutral stratification condition is conducted to assess the performance of the method in predicting the mean and fluctuating characteristics of the rough-wall turbulence.It is found that the logarithmic profile of the mean streamwise velocity and some key features of large-scale coherent structures can be reasonably predicted by adopting the proposed correction method and the low-order numerical scheme. 展开更多
关键词 atmospheric boundary layer near-wall correction large-eddy simulation(LES) very-large-scale motion
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A reconfigurable low-cost memory-efficient VLSI architecture for video scaling 被引量:1
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作者 汪彦刚 Peng Silong 《High Technology Letters》 EI CAS 2013年第2期137-144,共8页
A runtime reconfigurable very-large-scale integration (VLSI) architecture for image and video scaling by arbitrary factors with good antialiasing performance is presented in this paper. Video scal- ing is used in a ... A runtime reconfigurable very-large-scale integration (VLSI) architecture for image and video scaling by arbitrary factors with good antialiasing performance is presented in this paper. Video scal- ing is used in a wide range of applications from broadcast, medical imaging and high-resolution video effects to video surveillance, and video conferencing. Many algorithms have been proposed for these applications, such as piecewise polynomial kernels and windowed sinc kernels. The sum of three shifted versions of a B-spline function, whose weights can be adjusted for different applications, is adopted as the main filter. The proposed algorithm is confirmed to be effective on image scaling ap- plications and also verified by many widely acknowledged image quality measures. The reconfigu- rable hardware architecture constitutes an arbitrary scaler with low resource consumption and high performance targeted for field programmable gate array (FPGA) devices. The scaling factor can be changed on-the-fly, and the filter can also be changed during runtime within a unifying framework. 展开更多
关键词 video scaling very-large-scale integration (VLSI) architecture polyphase filter RECONFIGURATION
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Wafer-scale carbon-based CMOS PDK compatible with siliconbased VLSI design flow
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作者 Minghui Yin Haitao Xu +7 位作者 Yunxia You Ningfei Gao Weihua Zhang Hongwei Liu Huanhuan Zhou Chen Wang Lian-Mao Peng Zhiqiang Li 《Nano Research》 SCIE EI CSCD 2024年第8期7557-7566,共10页
Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,enc... Carbon nanotube field-effect transistors(CNTFETs)are increasingly recognized as a viable option for creating high-performance,low-power,and densely integrated circuits(ICs).Advancements in carbon-based electronics,encompassing materials and device technology,have enabled the fabrication of circuits with over 1000 gates,marking carbon-based integrated circuit design as a burgeoning field of research.A critical challenge in the realm of carbon-based very-large-scale integration(VLSI)is the lack of suitable automated design methodologies and infrastructure platforms.In this study,we present the development of a waferscale 3μm carbon-based complementary metal-oxide-semiconductor(CMOS)process design kit(PDK)(3μm-CNTFETs-PDK)compatible with silicon-based Electronic Design Automation(EDA)tools and VLSI circuit design flow.The proposed 3μm-CNTFETs-PDK features a contacted gate pitch(CGP)of 21μm,a gate density of 128 gates/mm^(2),and a transistor density of 554 transistors/mm^(2),with an intrinsic gate delay around 134 ns.Validation of the 3μm-CNTFETs-PDK was achieved through the successful design and tape-out of 153 standard cells and 333-stage ring oscillator circuits.Leveraging the carbon-based PDK and a silicon-based design platform,we successfully implemented a complete 64-bit static random-access memory(SRAM)circuit system for the first time,which exhibited timing,power,and area characteristics of clock@10 kHz,122.1μW,3795μm×2810μm.This research confirms that carbon-based IC design can be compatible with existing EDA tools and silicon-based VLSI design flow,thereby laying the groundwork for future carbon-based VLSI advancements. 展开更多
关键词 carbon nanotube field-effect transistors(CNTFETs) complementary metal-oxide-semiconductor(CMOS) process design kit(PDK) wafer-scale very-large-scale integration(VLSI)
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