This paper proposes a generalization of the MoM-GEC method [1] needed for studying planar structures excited with a source located at perpendicular plan relative to circuit plan. A general formulation is detailed...This paper proposes a generalization of the MoM-GEC method [1] needed for studying planar structures excited with a source located at perpendicular plan relative to circuit plan. A general formulation is detailed to allow modeling excitation of a planar structure with one or more sources located in plans other than the circuit plan. The numerical approach elaborated is based on the definition of new admittance operators and rotational transformations describing the transition from one plan to another. To validate this approach, we consider the case of a single source located in the perpendicular plan to the circuit.展开更多
A novel vertical graded source tunnel field-effect transistor(VGS-TFET)is proposed to improve device performance.By introducing a source with linearly graded component,the on-state current increases by more than two d...A novel vertical graded source tunnel field-effect transistor(VGS-TFET)is proposed to improve device performance.By introducing a source with linearly graded component,the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing(SS)due to the improved band-to-band tunneling efficiency.Compared with the conventional TFETs,much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec.Furthermore,the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.展开更多
We present a 3D approach to numerical modeling of the borehole-surface electromagnetic （BSEM） method. The 3D electromagnetic response created by a vertical line current source in a layered medium is modeled using th...We present a 3D approach to numerical modeling of the borehole-surface electromagnetic （BSEM） method. The 3D electromagnetic response created by a vertical line current source in a layered medium is modeled using the 3D integral equation method. The modeling results are consistent with analytical solutions. 3D Born approximation inversion of BSEM data is also conducted for reservoir delineation. The inversion method is verified by a synthetic reservoir model.展开更多
In this paper, by using the fast iterative method of mode decomposition[12], source range-depth localization performance of MMP for three kinds of vertical array (short, sparse and short-sparse arrays) in shallow wate...In this paper, by using the fast iterative method of mode decomposition[12], source range-depth localization performance of MMP for three kinds of vertical array (short, sparse and short-sparse arrays) in shallow water with a downward refraction sound-speed profile in the surnmertime is discussed; the accuracy of mode decomposition is measured by its rootmean-square error, RMS. The numerical results illustrate that the accuracy of source range and depth estimation are raised and the sidelobes are effectively suppressed. The short-sparse vertical array not only has shorter length and fewer hydrophones, but also can be applied to the different sea areas with various depth, so it is a practical type of vertical arrny in the engineering project of the passive source localization.展开更多
文摘This paper proposes a generalization of the MoM-GEC method [1] needed for studying planar structures excited with a source located at perpendicular plan relative to circuit plan. A general formulation is detailed to allow modeling excitation of a planar structure with one or more sources located in plans other than the circuit plan. The numerical approach elaborated is based on the definition of new admittance operators and rotational transformations describing the transition from one plan to another. To validate this approach, we consider the case of a single source located in the perpendicular plan to the circuit.
基金Project supported by the National Natural Science Foundation of China(Grant No.90304190002).
文摘A novel vertical graded source tunnel field-effect transistor(VGS-TFET)is proposed to improve device performance.By introducing a source with linearly graded component,the on-state current increases by more than two decades higher than that of the conventional GaAs TFETs without sacrificing the subthreshold swing(SS)due to the improved band-to-band tunneling efficiency.Compared with the conventional TFETs,much larger drive current range can be achieved by the proposed VGS-TFET with SS below the thermionic limitation of 60 mV/dec.Furthermore,the minimum SS about 20 mV/dec indicates its promising potential for further ultralow power applications.
文摘We present a 3D approach to numerical modeling of the borehole-surface electromagnetic （BSEM） method. The 3D electromagnetic response created by a vertical line current source in a layered medium is modeled using the 3D integral equation method. The modeling results are consistent with analytical solutions. 3D Born approximation inversion of BSEM data is also conducted for reservoir delineation. The inversion method is verified by a synthetic reservoir model.
文摘In this paper, by using the fast iterative method of mode decomposition[12], source range-depth localization performance of MMP for three kinds of vertical array (short, sparse and short-sparse arrays) in shallow water with a downward refraction sound-speed profile in the surnmertime is discussed; the accuracy of mode decomposition is measured by its rootmean-square error, RMS. The numerical results illustrate that the accuracy of source range and depth estimation are raised and the sidelobes are effectively suppressed. The short-sparse vertical array not only has shorter length and fewer hydrophones, but also can be applied to the different sea areas with various depth, so it is a practical type of vertical arrny in the engineering project of the passive source localization.
