Helsmoortel-Van der Aa综合征(HVDAS)是一种罕见的神经发育障碍性疾病,主要由活性依赖性神经保护蛋白(ADNP)基因突变引起,是最常见的孤独症谱系障碍(ASD)单基因病因之一。本文分析2024年就诊于海口市妇幼保健院的1例患儿,男,3岁10个月...Helsmoortel-Van der Aa综合征(HVDAS)是一种罕见的神经发育障碍性疾病,主要由活性依赖性神经保护蛋白(ADNP)基因突变引起,是最常见的孤独症谱系障碍(ASD)单基因病因之一。本文分析2024年就诊于海口市妇幼保健院的1例患儿,男,3岁10个月,因“运动、语言发育迟缓2年余,社交障碍1年余”入院,检查发现患儿存在孤独症谱系障碍、全面发育迟缓、特殊面容、矮小、脑积水等临床表现,基因检测发现患儿携带ADNP基因杂合突变{NM_001282531.3(ADNP):c.2189(exon6)delG[p.(Arg730Glnfs3)]},其父母及妹妹均未携带该突变。总结临床资料并结合文献复习,ADNP基因在染色质重塑和神经发育障碍中发挥重要作用,ADNP基因突变可累及多系统。此例HVDAS具有典型临床表现,并拓宽了脑积水的表型谱,为此类基因变异的遗传咨询以及临床医师的早期识别提供了参考依据。展开更多
The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typicall...The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typically achieved via ionic gating)to shift the vHS to the Fermi level provides a general mechanism for engineering such magnetism,its volatile nature often leads to the collapse of induced states upon gate field removal.Here,a novel scheme is presented for non-volatile magnetic control by utilizing ferroelectric heterostructures to achieve reversible magnetism switching.Using two-dimensional VSiN_(3),a nonmagnetic material with Mexican-hat electronic band dispersions hosting vHSs,as a prototype,it is preliminarily demonstrated that both electron and hole doping can robustly induce magnetism.Further,by interfacing VSiN_(3)with ferroelectric Sc_(2)CO_(2),reversible switching of its magnetic state via polarization-driven heterointerfacial charge transfer is achieved.This mechanism enables a dynamic transition between insulating and half-metallic phases in VSiN_(3),establishing a pathway to design multiferroic tunnel junctions with giant tunneling electroresistance or magnetoresistance.This work bridges non-volatile ferroelectric control with vHS-enhanced magnetism,opening opportunities for energy-efficient and high-performance spintronic devices and non-volatile memory devices.展开更多
As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM c...As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.展开更多
为深入了解Bonhoeffer-van der Pol系统在随机激励下系统动力学行为的演化规律,研究了随机Bonhoeffer-van der Pol系统的稳态响应和随机分岔。借助路径积分方法、高斯闭合方法和蒙特卡洛模拟等,求解了噪声激励下Bonhoeffer-van der Pol...为深入了解Bonhoeffer-van der Pol系统在随机激励下系统动力学行为的演化规律,研究了随机Bonhoeffer-van der Pol系统的稳态响应和随机分岔。借助路径积分方法、高斯闭合方法和蒙特卡洛模拟等,求解了噪声激励下Bonhoeffer-van der Pol系统的平稳解,发现系统参数诱导的随机P-分岔(唯像分岔)现象。通过与蒙特卡洛模拟结果的对比,验证了所述路径积分方法的准确性。展开更多
Two-dimensional van der Waals ferromagnet Fe_(3)GeTe_(2)(FGT)holds a great potential for applications in spintronic devices due to its high Curie temperature,easy tunability,and excellent structural stability in air.T...Two-dimensional van der Waals ferromagnet Fe_(3)GeTe_(2)(FGT)holds a great potential for applications in spintronic devices due to its high Curie temperature,easy tunability,and excellent structural stability in air.Theoretical studies have shown that pressure,as an external parameter,significantly affects its ferromagnetic properties.In this study,we have performed comprehensive high-pressure neutron powder diffraction(NPD)experiments on FGT up to 5 GPa to investigate the evolution of its structural and magnetic properties with hydrostatic pressure.The NPD data clearly reveal the robustness of the ferromagnetism in FGT,despite of an apparent suppression by hydrostatic pressure.As the pressure increases from 0 to 5 GPa,the Curie temperature is found to decrease monotonically from 225(5)K to 175(5)K,together with a dramatically suppressed ordered moment of Fe,which is well supported by the first-principles calculations.Although no pressure-driven structural phase transition is observed up to 5 GPa,quantitative analysis on the changes of bond lengths and bond angles indicates a significant modification of the exchange interactions,which accounts for the pressure-induced suppression of the ferromagnetism in FGT.展开更多
Self-intercalated van der Waals magnets,characterized by self-intercalating native atoms into van der Waals layered structures with intrinsic magnetism,exhibit a variety of novel physical properties.Here,using first-p...Self-intercalated van der Waals magnets,characterized by self-intercalating native atoms into van der Waals layered structures with intrinsic magnetism,exhibit a variety of novel physical properties.Here,using first-principles calculations and Monte Carlo simulations,we report a self-intercalated van der Waals ferromagnet,Cr_(3)Ge_(2)Te_(6),which has a high Curie temperature of 492 K.We find that Cr_(3)Ge_(2)Te_(6)is nearly half-metallic with a spin polarization reaching up to 90.9%.Due to the ferromagnetism and strong spin-orbit coupling effect in Cr_(3)Ge_(2)Te_(6),a large anomalous Hall conductivity of 138Ω^(-1)·cm^(-1)and 305Ω^(-1)·cm^(-1)can be realized when its magnetization is along its magnetic easy axis and hard axis,respectively.By doping electrons(holes)into Cr_(3)Ge_(2)Te_(6),these anomalous Hall conductivities can be increased up to 318Ω^(-1)·cm^(-1)(648Ω^(-1)·cm^(-1)).Interestingly,a five-layer Cr_(3)Ge_(2)Te_(6)thin film retains room-temperature ferromagnetism with a higher spin polarization and larger anomalous Hall conductivity.Our study demonstrates that Cr_(3)Ge_(2)Te_(6)is a novel room-temperature self-intercalated ferromagnet with high-spin polarization and large anomalous Hall conductivity,offering great opportunities for designing nano-scale electronic devices.展开更多
2月27日,苏州中材与伊拉克Galiawa Group VAN Company举行战略合作协议签约仪式。双方就推动苏州中材在综合工程服务领域的强大履约能力与Galiawa Group VAN Company的本地市场资源优势实现充分整合,加强水泥及轻质建材工程、新能源项...2月27日,苏州中材与伊拉克Galiawa Group VAN Company举行战略合作协议签约仪式。双方就推动苏州中材在综合工程服务领域的强大履约能力与Galiawa Group VAN Company的本地市场资源优势实现充分整合,加强水泥及轻质建材工程、新能源项目开发等领域业务合作,共同推动资源互补、市场共拓等进行了深入座谈交流。展开更多
Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial ...Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional(2D) ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP_(2)S_(6)/α-In_(2)Se_(3)/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP_(2)S_(6)/α-In_(2)Se_(3) heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In_(2)Se_(3). Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.展开更多
The city of Van is located to the Eastern Region of Turkey and has experienced two large earthquakes recently. Van earthquakes have caused big damages and demolitions in the city center, districts and in villages. As ...The city of Van is located to the Eastern Region of Turkey and has experienced two large earthquakes recently. Van earthquakes have caused big damages and demolitions in the city center, districts and in villages. As a result of precautions works have been realized to remove its effects shortly. However, it can be seen that the either urban or rural areas of the city carry the earthquake’s traces. Damages that the eartquake left on the buildings formed the most apparent and standing ones of the traces. Mud-brick buildings are the primary of those damaged buildings both in the centre of Van and in villages. Especially roofs’ collapsing and then walls’ demolition for mud-brick houses which were abandoned, and therefore were not maintained properly for a long time, are quite familiar situations after the earthquake. However, inhabited and maintained houses have been survived sturdily by contrast of other houses with modern materials and they helpt life to continue after the earthquake. In this study, mud-brick houses which were survived after earthquakes in Van and in the villages will be discussed. Reasons for demolition of those demolished and the qualities of those surviving ones will be scrutinized. It is going to be discussed how the mud-brick material which is distinguishing and struggling to gain it deserves as an ecological material today to resist against natural disasters sturdily when it is applied in decent way in scope with examples in the city of Van. Purpose of this study is to document right and wrong usage of the mud-brick materials with examples.展开更多
目的对一个常染色体显性遗传的Van der Hoeve综合征家系进行详尽的临床表型分析及基因突变检测,明确该家系的致病基因突变位点及该突变对基因编码的影响。方法对收集到的Van der Hoeve综合征家系进行包括病史、体格检查及辅助检查在内...目的对一个常染色体显性遗传的Van der Hoeve综合征家系进行详尽的临床表型分析及基因突变检测,明确该家系的致病基因突变位点及该突变对基因编码的影响。方法对收集到的Van der Hoeve综合征家系进行包括病史、体格检查及辅助检查在内的临床资料的收集及外周血液样本的采集,并对22位家系成员进行外显子组测序以及Sanger测序,利用生物信息学软件分析数据。结果该家系共五代,各代连续发病,且每一代男女均可患病,符合常染色体显性遗传特点。该家系中12例患者均自出生时巩膜即呈蓝色且身材矮小,8例患者有骨折病史,可正常愈合,3例患者考虑有Van der Hoeve综合征所致的听力下降,12例患者的COL1A1基因第17号外显子有一个碱基的缺失(c.1128delT),使第376位后的氨基酸编码改变,在第539位提前结束氨基酸编码,该家系中10例无症状者无此突变。结论该家系患者确定为由COL1A1基因c.1128delT突变导致的Van der Hoeve综合征。展开更多
The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal percept...The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are scarce.Here,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der Waals heterojunctions.Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power consumption.Furthermore,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal perception.This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.展开更多
Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene base...Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography technology.The single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals heterojunction.Thin polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles.Moreover,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.展开更多
文摘Helsmoortel-Van der Aa综合征(HVDAS)是一种罕见的神经发育障碍性疾病,主要由活性依赖性神经保护蛋白(ADNP)基因突变引起,是最常见的孤独症谱系障碍(ASD)单基因病因之一。本文分析2024年就诊于海口市妇幼保健院的1例患儿,男,3岁10个月,因“运动、语言发育迟缓2年余,社交障碍1年余”入院,检查发现患儿存在孤独症谱系障碍、全面发育迟缓、特殊面容、矮小、脑积水等临床表现,基因检测发现患儿携带ADNP基因杂合突变{NM_001282531.3(ADNP):c.2189(exon6)delG[p.(Arg730Glnfs3)]},其父母及妹妹均未携带该突变。总结临床资料并结合文献复习,ADNP基因在染色质重塑和神经发育障碍中发挥重要作用,ADNP基因突变可累及多系统。此例HVDAS具有典型临床表现,并拓宽了脑积水的表型谱,为此类基因变异的遗传咨询以及临床医师的早期识别提供了参考依据。
基金supported by the National Natural Science Foundation of China(Grant Nos.62174016,12474047,12204202,and 11974355)the Basic Research Program of Jiangsu(Grant No.BK20220679)+1 种基金the Fund for Shanxi“1331Project”the Research Project Supported by Shanxi Scholarship Council of China.
文摘The presence of a van Hove singularity(vHS)at the Fermi level can trigger magnetic instability by mediating a spontaneous transition from paramagnetic to magnetically ordered states.While electrostatic doping(typically achieved via ionic gating)to shift the vHS to the Fermi level provides a general mechanism for engineering such magnetism,its volatile nature often leads to the collapse of induced states upon gate field removal.Here,a novel scheme is presented for non-volatile magnetic control by utilizing ferroelectric heterostructures to achieve reversible magnetism switching.Using two-dimensional VSiN_(3),a nonmagnetic material with Mexican-hat electronic band dispersions hosting vHSs,as a prototype,it is preliminarily demonstrated that both electron and hole doping can robustly induce magnetism.Further,by interfacing VSiN_(3)with ferroelectric Sc_(2)CO_(2),reversible switching of its magnetic state via polarization-driven heterointerfacial charge transfer is achieved.This mechanism enables a dynamic transition between insulating and half-metallic phases in VSiN_(3),establishing a pathway to design multiferroic tunnel junctions with giant tunneling electroresistance or magnetoresistance.This work bridges non-volatile ferroelectric control with vHS-enhanced magnetism,opening opportunities for energy-efficient and high-performance spintronic devices and non-volatile memory devices.
基金supported by the National Key Research&Development Projects of China(Grant No.2022YFA1204100)National Natural Science Foundation of China(Grant No.62488201)+1 种基金CAS Project for Young Scientists in Basic Research(YSBR-003)the Innovation Program of Quantum Science and Technology(2021ZD0302700)。
文摘As a typical in-memory computing hardware design, nonvolatile ternary content-addressable memories(TCAMs) enable the logic operation and data storage for high throughout in parallel big data processing. However,TCAM cells based on conventional silicon-based devices suffer from structural complexity and large footprintlimitations. Here, we demonstrate an ultrafast nonvolatile TCAM cell based on the MoTe2/hBN/multilayergraphene (MLG) van der Waals heterostructure using a top-gated partial floating-gate field-effect transistor(PFGFET) architecture. Based on its ambipolar transport properties, the carrier type in the source/drain andcentral channel regions of the MoTe2 channel can be efficiently tuned by the control gate and top gate, respectively,enabling the reconfigurable operation of the device in either memory or FET mode. When working inthe memory mode, it achieves an ultrafast 60 ns programming/erase speed with a current on-off ratio of ∼105,excellent retention capability, and robust endurance. When serving as a reconfigurable transistor, unipolar p-typeand n-type FETs are obtained by adopting ultrafast 60 ns control-gate voltage pulses with different polarities.The monolithic integration of memory and logic within a single device enables the content-addressable memory(CAM) functionality. Finally, by integrating two PFGFETs in parallel, a TCAM cell with a high current ratioof ∼10^(5) between the match and mismatch states is achieved without requiring additional peripheral circuitry.These results provide a promising route for the design of high-performance TCAM devices for future in-memorycomputing applications.
文摘为深入了解Bonhoeffer-van der Pol系统在随机激励下系统动力学行为的演化规律,研究了随机Bonhoeffer-van der Pol系统的稳态响应和随机分岔。借助路径积分方法、高斯闭合方法和蒙特卡洛模拟等,求解了噪声激励下Bonhoeffer-van der Pol系统的平稳解,发现系统参数诱导的随机P-分岔(唯像分岔)现象。通过与蒙特卡洛模拟结果的对比,验证了所述路径积分方法的准确性。
基金Project supported by the National Natural Science Foundation of China(Grant No.12074023)the Large Scientific Facility Open Subject of Songshan Lake(Grant No.KFKT2022B05)+1 种基金the Fundamental Research Funds for the Central Universities in ChinaNeutron diffraction experiments at the Materials and Life Science Experimental Facility of the J-PARC were performed through the user program(Proposal No.2023A0185).
文摘Two-dimensional van der Waals ferromagnet Fe_(3)GeTe_(2)(FGT)holds a great potential for applications in spintronic devices due to its high Curie temperature,easy tunability,and excellent structural stability in air.Theoretical studies have shown that pressure,as an external parameter,significantly affects its ferromagnetic properties.In this study,we have performed comprehensive high-pressure neutron powder diffraction(NPD)experiments on FGT up to 5 GPa to investigate the evolution of its structural and magnetic properties with hydrostatic pressure.The NPD data clearly reveal the robustness of the ferromagnetism in FGT,despite of an apparent suppression by hydrostatic pressure.As the pressure increases from 0 to 5 GPa,the Curie temperature is found to decrease monotonically from 225(5)K to 175(5)K,together with a dramatically suppressed ordered moment of Fe,which is well supported by the first-principles calculations.Although no pressure-driven structural phase transition is observed up to 5 GPa,quantitative analysis on the changes of bond lengths and bond angles indicates a significant modification of the exchange interactions,which accounts for the pressure-induced suppression of the ferromagnetism in FGT.
基金Project supported by the National Key R&D Program of China(Grant No.2022YFA1403301)the National Natural Science Foundation of China(Grant Nos.12474247 and 92165204)+1 种基金the Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(Grant No.2022B1212010008)the support from the Fundamental Research Funds for the Central Universities,Sun Yat-Sen University(Grant No.24qnpy108)。
文摘Self-intercalated van der Waals magnets,characterized by self-intercalating native atoms into van der Waals layered structures with intrinsic magnetism,exhibit a variety of novel physical properties.Here,using first-principles calculations and Monte Carlo simulations,we report a self-intercalated van der Waals ferromagnet,Cr_(3)Ge_(2)Te_(6),which has a high Curie temperature of 492 K.We find that Cr_(3)Ge_(2)Te_(6)is nearly half-metallic with a spin polarization reaching up to 90.9%.Due to the ferromagnetism and strong spin-orbit coupling effect in Cr_(3)Ge_(2)Te_(6),a large anomalous Hall conductivity of 138Ω^(-1)·cm^(-1)and 305Ω^(-1)·cm^(-1)can be realized when its magnetization is along its magnetic easy axis and hard axis,respectively.By doping electrons(holes)into Cr_(3)Ge_(2)Te_(6),these anomalous Hall conductivities can be increased up to 318Ω^(-1)·cm^(-1)(648Ω^(-1)·cm^(-1)).Interestingly,a five-layer Cr_(3)Ge_(2)Te_(6)thin film retains room-temperature ferromagnetism with a higher spin polarization and larger anomalous Hall conductivity.Our study demonstrates that Cr_(3)Ge_(2)Te_(6)is a novel room-temperature self-intercalated ferromagnet with high-spin polarization and large anomalous Hall conductivity,offering great opportunities for designing nano-scale electronic devices.
文摘2月27日,苏州中材与伊拉克Galiawa Group VAN Company举行战略合作协议签约仪式。双方就推动苏州中材在综合工程服务领域的强大履约能力与Galiawa Group VAN Company的本地市场资源优势实现充分整合,加强水泥及轻质建材工程、新能源项目开发等领域业务合作,共同推动资源互补、市场共拓等进行了深入座谈交流。
基金supported by the Chinese Academy of Sciences Project for Young Scientists in Basic Research(Grant No.YSBR-049)the Innovation Program for Quantum Science and Technology(Grant No.2021ZD0302800)the Fundamental Research Funds for the Central Universities(Grant No.WK3510000013)。
文摘Recent advances in van der Waals(vdW) ferroelectrics have sparked the development of related heterostructures with non-volatile and field-tunable functionalities. In vdW ferroelectric heterojunctions, the interfacial electrical characteristics play a crucial role in determining their performance and functionality. In this study,we explore the interfacial polarization coupling in two-dimensional(2D) ferroelectric heterojunctions by fabricating a graphene/h-BN/CuInP_(2)S_(6)/α-In_(2)Se_(3)/Au ferroelectric field-effect transistor. By varying the gate electric field, the CuInP_(2)S_(6)/α-In_(2)Se_(3) heterojunction displays distinct interfacial polarization coupling states, resulting in significantly different electrical transport behaviors. Under strong gate electric fields, the migration of Cu ions further enhances the interfacial polarization effect, enabling continuous tuning of both the polarization state and carrier concentration in α-In_(2)Se_(3). Our findings offer valuable insights for the development of novel multifunctional devices based on 2D ferroelectric materials.
文摘The city of Van is located to the Eastern Region of Turkey and has experienced two large earthquakes recently. Van earthquakes have caused big damages and demolitions in the city center, districts and in villages. As a result of precautions works have been realized to remove its effects shortly. However, it can be seen that the either urban or rural areas of the city carry the earthquake’s traces. Damages that the eartquake left on the buildings formed the most apparent and standing ones of the traces. Mud-brick buildings are the primary of those damaged buildings both in the centre of Van and in villages. Especially roofs’ collapsing and then walls’ demolition for mud-brick houses which were abandoned, and therefore were not maintained properly for a long time, are quite familiar situations after the earthquake. However, inhabited and maintained houses have been survived sturdily by contrast of other houses with modern materials and they helpt life to continue after the earthquake. In this study, mud-brick houses which were survived after earthquakes in Van and in the villages will be discussed. Reasons for demolition of those demolished and the qualities of those surviving ones will be scrutinized. It is going to be discussed how the mud-brick material which is distinguishing and struggling to gain it deserves as an ecological material today to resist against natural disasters sturdily when it is applied in decent way in scope with examples in the city of Van. Purpose of this study is to document right and wrong usage of the mud-brick materials with examples.
文摘目的对一个常染色体显性遗传的Van der Hoeve综合征家系进行详尽的临床表型分析及基因突变检测,明确该家系的致病基因突变位点及该突变对基因编码的影响。方法对收集到的Van der Hoeve综合征家系进行包括病史、体格检查及辅助检查在内的临床资料的收集及外周血液样本的采集,并对22位家系成员进行外显子组测序以及Sanger测序,利用生物信息学软件分析数据。结果该家系共五代,各代连续发病,且每一代男女均可患病,符合常染色体显性遗传特点。该家系中12例患者均自出生时巩膜即呈蓝色且身材矮小,8例患者有骨折病史,可正常愈合,3例患者考虑有Van der Hoeve综合征所致的听力下降,12例患者的COL1A1基因第17号外显子有一个碱基的缺失(c.1128delT),使第376位后的氨基酸编码改变,在第539位提前结束氨基酸编码,该家系中10例无症状者无此突变。结论该家系患者确定为由COL1A1基因c.1128delT突变导致的Van der Hoeve综合征。
基金supported by National Natural Science Foundation of China(No.51902250).
文摘The crossmodal interaction of different senses,which is an important basis for learning and memory in the human brain,is highly desired to be mimicked at the device level for developing neuromorphic crossmodal perception,but related researches are scarce.Here,we demonstrate an optoelectronic synapse for vision-olfactory crossmodal perception based on MXene/violet phosphorus(VP)van der Waals heterojunctions.Benefiting from the efficient separation and transport of photogenerated carriers facilitated by conductive MXene,the photoelectric responsivity of VP is dramatically enhanced by 7 orders of magnitude,reaching up to 7.7 A W^(−1).Excited by ultraviolet light,multiple synaptic functions,including excitatory postsynaptic currents,pairedpulse facilitation,short/long-term plasticity and“learning-experience”behavior,were demonstrated with a low power consumption.Furthermore,the proposed optoelectronic synapse exhibits distinct synaptic behaviors in different gas environments,enabling it to simulate the interaction of visual and olfactory information for crossmodal perception.This work demonstrates the great potential of VP in optoelectronics and provides a promising platform for applications such as virtual reality and neurorobotics.
基金supported by National Natural Science Foundation of China(51672308,51972025,61888102,and 62004187).
文摘Two-dimension(2D)van der Waals heterojunction holds essential promise in achieving high-performance flexible near-infrared(NIR)photodetector.Here,we report the successful fabrication of ZnSb/Ti_(3)C_(2)T_(x)MXene based flexible NIR photodetector array via a facile photolithography technology.The single ZnSb/Ti_(3)C_(2)T_(x)photodetector exhibited a high light-to-dark current ratio of 4.98,fast response/recovery time(2.5/1.3 s)and excellent stability due to the tight connection between 2D ZnSb nanoplates and 2D Ti_(3)C_(2)T_(x)MXene nanoflakes,and the formed 2D van der Waals heterojunction.Thin polyethylene terephthalate(PET)substrate enables the ZnSb/Ti_(3)C_(2)T_(x)photodetector withstand bending such that stable photoelectrical properties with non-obvious change were maintained over 5000 bending cycles.Moreover,the ZnSb/Ti_(3)C_(2)T_(x)photodetectors were integrated into a 26×5 device array,realizing a NIR image sensing application.
