Two-dimensional(2 D)few-layerVSe_(2),V_(1-x)Fe_(x)Se_(2) nanosheets have been synthesized by a hightemperature organic solution-phase method. The thickness of VSe_(2) nanosheets can be tuned from 12 to 5 layers by dec...Two-dimensional(2 D)few-layerVSe_(2),V_(1-x)Fe_(x)Se_(2) nanosheets have been synthesized by a hightemperature organic solution-phase method. The thickness of VSe_(2) nanosheets can be tuned from 12 to 5 layers by decreasing the precursor concentrations. The few-layer VSe_(2) nanosheets show the room-temperature ferromagnetism. The coercivity and magnetization reach 0.024 T and 0.036 mA·m^(2)·g^(-1) at room temperature. The chargedensity wave behavior is also confirmed in VSe_(2) by the hysteresis loops and zero-field-cooling curve. V_(1-x)Fe_(x)Se_(2) nanosheets can be obtained by doping Fe(acac)3 in the reaction process. The room-temperature coercivity and magnetization of V_(0.8)Fe_(0.2)Se_(2) nanosheets are 5 times higher than those of the pure VSe_(2) nanosheets without destroying the structures. The enhancement of magnetization is due to the coupling interaction of 3 d orbits between V and Fe atoms. Higher Fe concentration is beneficial to improve the coercivity, which is attributed to the formation of the second phase Fe3 Se4. This simple chemical preparation method can be extended to prepare the other 2 D materials.展开更多
Lithium–sulfur batteries have been attracting considerable research attention due to their high energy densities and low costs. However, one of their main challenges is the undesired shuttling of polysulfides, causin...Lithium–sulfur batteries have been attracting considerable research attention due to their high energy densities and low costs. However, one of their main challenges is the undesired shuttling of polysulfides, causing rapid capacity degradation. Herein, we report the first example of sulfiphilic VSe2 ultrafine nanocrystals immobilized on nitrogen-doped graphene to modify the battery separator for alleviating the shuttling problem. VSe2 nanocrystals provide numerous active sites for chemisorption of polysulfides as well as benefit the nucleation and growth of Li2S. Furthermore, the kinetic reactions are accelerated which is confirmed by higher exchange current density and higher lithium ion diffusion coefficient. And the first-principles calculations further show that the exposed sulfiphilic planes of VSe2 boost the redox of Li2S. When used as separators within the lithium sulfur batteries, the cell indicates greatly enhanced electrochemical performances with excellent long cycling stability and exceptional rate capability up to 8 C. Moreover, it delivers a higher areal capacity of 4.04 mAh·cm^−2 as well as superior cycling stability with sulfur areal loading up to 6.1 mg·cm^−2. The present strategy can encourage us in engineering novel multifunctional separators for energy-storage devices.展开更多
Recent experimental breakthroughs open up new opportunities for magnetism in few-atomic-layer twodimensional(2 D) materials, which makes fabrication of new magnetic 2 D materials a fascinating issue.Here, we report th...Recent experimental breakthroughs open up new opportunities for magnetism in few-atomic-layer twodimensional(2 D) materials, which makes fabrication of new magnetic 2 D materials a fascinating issue.Here, we report the growth of monolayer VSe_2 by molecular beam epitaxy(MBE) method. Electronic properties measurements by scanning tunneling spectroscopy(STS) method revealed that the asgrown monolayer VSe_2 has magnetic characteristic peaks in its electronic density of states and a lower work-function at its edges. Moreover, air exposure experiments show air-stability of the monolayer VSe_2. This high-quality monolayer VSe_2, a very air-inert 2 D material with magnetism and low edge work function, is promising for applications in developing next-generation low power-consumption, high efficiency spintronic devices and new electrocatalysts.展开更多
VSe2 is with high electrical conductivity and high work function,thus it is beneficial for the carrier transport in the optoelectronic devices.However,the performance and mechanism of its effect on the photoelectronic...VSe2 is with high electrical conductivity and high work function,thus it is beneficial for the carrier transport in the optoelectronic devices.However,the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood.In this work,we fabricate VSe2 film between back contact and absorber layer Cu2ZnSn(S,Se)4(CZTSSe)film.We demonstrate that the VSe2 film in back contact region increases solar cell efficiency by 39%.Besides improving the carrier transport in the back contact region,the increasing can also be attributed to the reduction of the decomposition reaction of CZTSSe during the nucleation of CZTSSe as VSe2 fabricated between back contact and absorber layer.The present work not only provides an effective method to improve the performance of the optoelectronic device,but also shows an attractive application of metallic TMDs in optoelectronic device and solar cell energy generation.展开更多
We put forward a two-step route to synthesize vanadium diselenide(VSe_2), a typical transition metal dichalcogenide(TMD). To obtain the VSe_2 film, we first prepare a vanadium film by electron beam evaporation and we ...We put forward a two-step route to synthesize vanadium diselenide(VSe_2), a typical transition metal dichalcogenide(TMD). To obtain the VSe_2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400?C selenization temperature, we successfully prepare VSe_2 films on both glass and Mo substrates. The prepared VSe_2 has the characteristic of preferential growth along the c-axis, with low transmittance.It is found that the contact between Al and VSe_2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe_2/Mo sample reveal that the VSe_2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe_2 in photovoltaic devices.展开更多
This study used density functional theory and the quantum transport method to investigate the interfacial coupling and spin transport of transition metals(TMs)with a Fe,Co,and Ni/2H-VSe_(2)hybrid nanostructure.Because...This study used density functional theory and the quantum transport method to investigate the interfacial coupling and spin transport of transition metals(TMs)with a Fe,Co,and Ni/2H-VSe_(2)hybrid nanostructure.Because the indirect coupling of TM-Se-V led to an obvious reduction of the magnetic moment and the disappearance of the half-metal characteristics of 2H-VSe_(2),the expected spin-filtering effect of individual TMs and 2H-VSe_(2)deteriorated at the contact region.Nevertheless,all the TM/2H-VSe_(2)-based dual-probe devices exhibited an interesting bias-dependent spin-injection efficiency with a maximum output spin-polarized current of 666 mA mm-1 in Co/2H-VSe_(2).The proposed TM/2H-VSe_(2)-based spin-field-effect transistor demonstrated outstanding performance.The Ni/2H-VSe_(2)-based transistor achieved a maximum output spin-polarized current of 3117 m A mm-1 and demonstrated a good switching characteristic of 106 mV dec-1.Importantly,all transistors achieved a widely tunable scale of spin-extraction efficiency ranging consistently between 96%and-92%with gate bias.These results indicate a promising candidate for use in high-performance spintronic devices.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.51971122,51571135 and 51701106)the National Key R&D Program of China(No.2017YFB0405703)。
文摘Two-dimensional(2 D)few-layerVSe_(2),V_(1-x)Fe_(x)Se_(2) nanosheets have been synthesized by a hightemperature organic solution-phase method. The thickness of VSe_(2) nanosheets can be tuned from 12 to 5 layers by decreasing the precursor concentrations. The few-layer VSe_(2) nanosheets show the room-temperature ferromagnetism. The coercivity and magnetization reach 0.024 T and 0.036 mA·m^(2)·g^(-1) at room temperature. The chargedensity wave behavior is also confirmed in VSe_(2) by the hysteresis loops and zero-field-cooling curve. V_(1-x)Fe_(x)Se_(2) nanosheets can be obtained by doping Fe(acac)3 in the reaction process. The room-temperature coercivity and magnetization of V_(0.8)Fe_(0.2)Se_(2) nanosheets are 5 times higher than those of the pure VSe_(2) nanosheets without destroying the structures. The enhancement of magnetization is due to the coupling interaction of 3 d orbits between V and Fe atoms. Higher Fe concentration is beneficial to improve the coercivity, which is attributed to the formation of the second phase Fe3 Se4. This simple chemical preparation method can be extended to prepare the other 2 D materials.
基金The authors acknowledge the financial supports provided by the National Natural Science Foundation of China(Nos.21871164,21803036,and U1764258)the Taishan Scholar Project Foundation of Shandong Province(Nos.ts20190908 and ts201511004)the National Science Foundation of Shandong Province(No.ZR2019MB024).The theoretical calculations in this work were performed on the HPC Cloud Platform of Shandong University.We also thank Anhui Kemi Machinery Technology Co,Ltd for providing Teflon-lined stainless steel autoclave.
文摘Lithium–sulfur batteries have been attracting considerable research attention due to their high energy densities and low costs. However, one of their main challenges is the undesired shuttling of polysulfides, causing rapid capacity degradation. Herein, we report the first example of sulfiphilic VSe2 ultrafine nanocrystals immobilized on nitrogen-doped graphene to modify the battery separator for alleviating the shuttling problem. VSe2 nanocrystals provide numerous active sites for chemisorption of polysulfides as well as benefit the nucleation and growth of Li2S. Furthermore, the kinetic reactions are accelerated which is confirmed by higher exchange current density and higher lithium ion diffusion coefficient. And the first-principles calculations further show that the exposed sulfiphilic planes of VSe2 boost the redox of Li2S. When used as separators within the lithium sulfur batteries, the cell indicates greatly enhanced electrochemical performances with excellent long cycling stability and exceptional rate capability up to 8 C. Moreover, it delivers a higher areal capacity of 4.04 mAh·cm^−2 as well as superior cycling stability with sulfur areal loading up to 6.1 mg·cm^−2. The present strategy can encourage us in engineering novel multifunctional separators for energy-storage devices.
基金supported by the National Natural Science Foundation of China(61725107,51572290 and 11334006)National Key Research&Development Projects of China(2016YFA0202301)+1 种基金National Basic Research Program of China(2013CBA01601)Strategic Priority Research Program(B)of Chinese Academy of Sciences(XDPB06)
文摘Recent experimental breakthroughs open up new opportunities for magnetism in few-atomic-layer twodimensional(2 D) materials, which makes fabrication of new magnetic 2 D materials a fascinating issue.Here, we report the growth of monolayer VSe_2 by molecular beam epitaxy(MBE) method. Electronic properties measurements by scanning tunneling spectroscopy(STS) method revealed that the asgrown monolayer VSe_2 has magnetic characteristic peaks in its electronic density of states and a lower work-function at its edges. Moreover, air exposure experiments show air-stability of the monolayer VSe_2. This high-quality monolayer VSe_2, a very air-inert 2 D material with magnetism and low edge work function, is promising for applications in developing next-generation low power-consumption, high efficiency spintronic devices and new electrocatalysts.
基金supported by the National Key R&D Program of China(2019YFB1503500,2018YFE0203400,2018YFB1500200)National Natural Science Foundation of China(U1902218,11774187),and 111 Project(B16027).
文摘VSe2 is with high electrical conductivity and high work function,thus it is beneficial for the carrier transport in the optoelectronic devices.However,the performance and mechanism of its effect on the photoelectronic devices conversion efficiency is still beyond understood.In this work,we fabricate VSe2 film between back contact and absorber layer Cu2ZnSn(S,Se)4(CZTSSe)film.We demonstrate that the VSe2 film in back contact region increases solar cell efficiency by 39%.Besides improving the carrier transport in the back contact region,the increasing can also be attributed to the reduction of the decomposition reaction of CZTSSe during the nucleation of CZTSSe as VSe2 fabricated between back contact and absorber layer.The present work not only provides an effective method to improve the performance of the optoelectronic device,but also shows an attractive application of metallic TMDs in optoelectronic device and solar cell energy generation.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.51572132,61674082,and 61774089)the National Key R&D Program of China(Grant No.2018YFB1500202)+3 种基金Tianjin Natural Science Foundation of Key Project,China(Grant Nos.18JCZDJC31200 and 16JCZDJC30700)Yang Fan Innovative and Entrepreneurial Research Team Project,China(Grant No.2014YT02N037)111 Project,China(Grant No.B16027)the International Cooperation Base,China(Grant No.2016D01025)
文摘We put forward a two-step route to synthesize vanadium diselenide(VSe_2), a typical transition metal dichalcogenide(TMD). To obtain the VSe_2 film, we first prepare a vanadium film by electron beam evaporation and we then perform selenization in a vacuum chamber. This method has the advantages of low temperature, is less time-consuming, has a large area, and has a stable performance. At 400?C selenization temperature, we successfully prepare VSe_2 films on both glass and Mo substrates. The prepared VSe_2 has the characteristic of preferential growth along the c-axis, with low transmittance.It is found that the contact between Al and VSe_2/Mo is ohmic contact. Compared to Mo substrate, lower square resistance and higher carrier concentration of the VSe_2/Mo sample reveal that the VSe_2 film may be a potential material for thin film solar cells or other semiconductor devices. The new synthetic strategy that is developed here paves a sustainable way to the application of VSe_2 in photovoltaic devices.
基金the support of the Strategic Priority Research Program of the Chinese Academy of Sciences (XDB0450101)the Innovation Program for Quantum Science and Technology (2021ZD0303306)+2 种基金the National Natural Science Foundation of China (12125408, 11974322 and 12334004)the Informatization Plan of the Chinese Academy of Sciences (CASWX2021SF-0105)the support of the National Natural Science Foundation of China (12174363)。
基金the 111 project(B12026)the National Natural Science Foundation of China(61904142)the Natural Science Basic Research Plan in Shaanxi Province of China(2019ZDLGY16-03)。
文摘This study used density functional theory and the quantum transport method to investigate the interfacial coupling and spin transport of transition metals(TMs)with a Fe,Co,and Ni/2H-VSe_(2)hybrid nanostructure.Because the indirect coupling of TM-Se-V led to an obvious reduction of the magnetic moment and the disappearance of the half-metal characteristics of 2H-VSe_(2),the expected spin-filtering effect of individual TMs and 2H-VSe_(2)deteriorated at the contact region.Nevertheless,all the TM/2H-VSe_(2)-based dual-probe devices exhibited an interesting bias-dependent spin-injection efficiency with a maximum output spin-polarized current of 666 mA mm-1 in Co/2H-VSe_(2).The proposed TM/2H-VSe_(2)-based spin-field-effect transistor demonstrated outstanding performance.The Ni/2H-VSe_(2)-based transistor achieved a maximum output spin-polarized current of 3117 m A mm-1 and demonstrated a good switching characteristic of 106 mV dec-1.Importantly,all transistors achieved a widely tunable scale of spin-extraction efficiency ranging consistently between 96%and-92%with gate bias.These results indicate a promising candidate for use in high-performance spintronic devices.
