Many classical clustering algorithms do good jobs on their prerequisite but do not scale well when being applied to deal with very large data sets(VLDS).In this work,a novel division and partition clustering method(DP...Many classical clustering algorithms do good jobs on their prerequisite but do not scale well when being applied to deal with very large data sets(VLDS).In this work,a novel division and partition clustering method(DP) was proposed to solve the problem.DP cut the source data set into data blocks,and extracted the eigenvector for each data block to form the local feature set.The local feature set was used in the second round of the characteristics polymerization process for the source data to find the global eigenvector.Ultimately according to the global eigenvector,the data set was assigned by criterion of minimum distance.The experimental results show that it is more robust than the conventional clusterings.Characteristics of not sensitive to data dimensions,distribution and number of nature clustering make it have a wide range of applications in clustering VLDS.展开更多
计算机实验室一般采用保护卡或还原精灵的有盘系统,该模式下,计算机故障率高且可维护性差,特别是计算机实验教学的许多内容都不能进行实验,严重影响了实验教学的质量。该文基于VLD(Virtual LAN Drive)技术,探索和研究在无盘网络模式下,...计算机实验室一般采用保护卡或还原精灵的有盘系统,该模式下,计算机故障率高且可维护性差,特别是计算机实验教学的许多内容都不能进行实验,严重影响了实验教学的质量。该文基于VLD(Virtual LAN Drive)技术,探索和研究在无盘网络模式下,彻底克服了计算机实验室有盘系统的缺点并解决了实验教学中长期存在的难题。展开更多
垂直双扩散金属-氧化物半导体场效应管(VDMOS)器件的反向耐压能力主要取决于器件结构中的特定pn结反偏击穿电压,由于pn结特性,击穿通常发生在结终端。随着结终端技术的发展,功率VDMOS器件的击穿特性有了很大的提升。主要介绍了几种目前...垂直双扩散金属-氧化物半导体场效应管(VDMOS)器件的反向耐压能力主要取决于器件结构中的特定pn结反偏击穿电压,由于pn结特性,击穿通常发生在结终端。随着结终端技术的发展,功率VDMOS器件的击穿特性有了很大的提升。主要介绍了几种目前常用的结终端技术的结构及工作原理,包括场限环技术、p+偏移技术、横向变掺杂技术、结终端扩展技术和RESURF技术。重点探讨了每种方法的优缺点,并指出几种结终端技术不同的设计难度、工艺控制和实现要点等。同时固定元胞设计,采用不同的结终端技术试制了600 V VDMOS产品,对比了采用不同结终端技术制作芯片的工艺制造以及成本,可为实际的制造生产提供理论指导。展开更多
Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and ...Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.展开更多
基金Projects(60903082,60975042)supported by the National Natural Science Foundation of ChinaProject(20070217043)supported by the Research Fund for the Doctoral Program of Higher Education of China
文摘Many classical clustering algorithms do good jobs on their prerequisite but do not scale well when being applied to deal with very large data sets(VLDS).In this work,a novel division and partition clustering method(DP) was proposed to solve the problem.DP cut the source data set into data blocks,and extracted the eigenvector for each data block to form the local feature set.The local feature set was used in the second round of the characteristics polymerization process for the source data to find the global eigenvector.Ultimately according to the global eigenvector,the data set was assigned by criterion of minimum distance.The experimental results show that it is more robust than the conventional clusterings.Characteristics of not sensitive to data dimensions,distribution and number of nature clustering make it have a wide range of applications in clustering VLDS.
文摘计算机实验室一般采用保护卡或还原精灵的有盘系统,该模式下,计算机故障率高且可维护性差,特别是计算机实验教学的许多内容都不能进行实验,严重影响了实验教学的质量。该文基于VLD(Virtual LAN Drive)技术,探索和研究在无盘网络模式下,彻底克服了计算机实验室有盘系统的缺点并解决了实验教学中长期存在的难题。
文摘垂直双扩散金属-氧化物半导体场效应管(VDMOS)器件的反向耐压能力主要取决于器件结构中的特定pn结反偏击穿电压,由于pn结特性,击穿通常发生在结终端。随着结终端技术的发展,功率VDMOS器件的击穿特性有了很大的提升。主要介绍了几种目前常用的结终端技术的结构及工作原理,包括场限环技术、p+偏移技术、横向变掺杂技术、结终端扩展技术和RESURF技术。重点探讨了每种方法的优缺点,并指出几种结终端技术不同的设计难度、工艺控制和实现要点等。同时固定元胞设计,采用不同的结终端技术试制了600 V VDMOS产品,对比了采用不同结终端技术制作芯片的工艺制造以及成本,可为实际的制造生产提供理论指导。
基金Project supported by the Key Research and Development Program of Jiangsu Province,China(Grant No.BE2020010)the Natural Science Foundation of Guangdong Province,China(Grant No.2023A1515012652)。
文摘Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OIDVLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.
