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SESAM锁模OP-VECSELs技术 被引量:3
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作者 张鹏 于未茗 +1 位作者 宋晏蓉 张志刚 《激光技术》 CAS CSCD 北大核心 2007年第3期291-294,共4页
综述了半导体可饱和吸收镜(SESAM)锁模光抽运垂直外腔面发射半导体激光器的理论,分析总结了相关实验技术手段,对SESAM锁模OP-VECSELs的最新研究成果作了介绍。
关键词 激光技术 半导体可饱和吸收镜锁模 光抽运垂直外腔面发射半导体激光器 重复频率 饱和能量 饱和参数 调制深度
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VECSEL Semiconductor Lasers
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作者 SHANXiao-nan LUGuo-guang +5 位作者 HEChun-feng SUNYan-fang LITe QINLi NINGYong-qiang WANGLi-jun 《光机电信息》 2005年第4期9-16,共8页
Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is no... Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking. 展开更多
关键词 vecsel 半导体激光器 光泵 倍频 锁模
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OPS-VECSEL芯片的生长与光谱研究
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作者 黄祖炎 韦欣 +1 位作者 王青 宋国峰 《半导体技术》 CAS CSCD 北大核心 2009年第10期998-1001,共4页
光泵浦半导体垂直外腔面发射激光器(OPS-VECSEL)是一种新型激光器,在很多领域都具有广阔的应用前景。采用MOCVD生长了工作波长为980nm的VECSEL芯片,测量了芯片X射线衍射(XRD)图谱,光致发光(PL)谱和反射谱,结果表明,芯片生长的准确性较... 光泵浦半导体垂直外腔面发射激光器(OPS-VECSEL)是一种新型激光器,在很多领域都具有广阔的应用前景。采用MOCVD生长了工作波长为980nm的VECSEL芯片,测量了芯片X射线衍射(XRD)图谱,光致发光(PL)谱和反射谱,结果表明,芯片生长的准确性较高。同时采用物理光学的理论结合实际模型,运用矩阵分析方法计算了VECSEL的反射谱,计算结果与实验结果吻合良好。最后,通过对不同窗口层厚度的纵向增强因子的计算和分析得到了共振结构具有高的峰值增强,反共振结构具有大的增益带宽。在理论上提出,对于该OPS-VECSEL结构,采用共振和反共振结构之间的窗口厚度可以使其稳定工作在特定波长而又不严格限制增益带宽。 展开更多
关键词 垂直外腔面发射激光器 金属有机化合物气相淀积 反射谱 纵向增强因子
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VECSEL热焦距测量以及角度调谐研究
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作者 高勇喜 郭洁 +2 位作者 王巍 佟存柱 梁晓燕 《中国激光》 EI CAS CSCD 北大核心 2021年第5期243-249,共7页
为了使半导体激光器输出高功率、高光束质量的激光,垂直外腔面发射激光器(VECSEL)应运而生。本文通过对激光器谐振腔的稳定条件进行计算,并结合实验估算出VECSEL中增益芯片的热透镜在泵浦功率为31.3 W时的热焦距在45.7 mm到53.6 mm之间... 为了使半导体激光器输出高功率、高光束质量的激光,垂直外腔面发射激光器(VECSEL)应运而生。本文通过对激光器谐振腔的稳定条件进行计算,并结合实验估算出VECSEL中增益芯片的热透镜在泵浦功率为31.3 W时的热焦距在45.7 mm到53.6 mm之间。实验过程中观测到增益芯片的荧光光谱随观测角度变化的现象,并提出一种通过观测增益芯片在不同角度下的荧光光谱来直接估算VECSEL的调谐范围的方法,用所提方法测得增益芯片调谐范围为995~1030 nm。 展开更多
关键词 激光器 垂直外腔面发射激光器(vecsel) 热焦距 角度调谐 荧光光谱
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光抽运垂直外腔面发射激光器特性与研究进展 被引量:4
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作者 张冠杰 舒永春 +5 位作者 刘如彬 舒强 林耀望 姚江宏 王占国 许京军 《激光技术》 CAS CSCD 北大核心 2006年第4期351-354,共4页
介绍了光抽运半导体垂直外腔面发射激光器的结构特点、设计原理及其性能优势,综合评述该领域的最新研究进展,并探讨该类型激光器的发展前景和技术发展方向。
关键词 光电子学 垂直外腔面发射激光器 光抽运 分布布喇格反射镜 超短脉冲
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垂直外腔面发射激光器的模拟分析 被引量:3
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作者 倪演海 戴特力 +2 位作者 梁一平 杜亮 伍喻 《重庆师范大学学报(自然科学版)》 CAS 2011年第1期55-59,共5页
垂直外腔面发射激光器芯片的生长工艺要求精确到nm量级,制作成本高,有必要用软件对设计好的VECSEL芯片进行仿真,实现优化。通过PICS3D软件对已经设计好的一个底发射的VECSEL芯片结构进行仿真,获得了量子阱有源区的带隙结构、材料增益曲... 垂直外腔面发射激光器芯片的生长工艺要求精确到nm量级,制作成本高,有必要用软件对设计好的VECSEL芯片进行仿真,实现优化。通过PICS3D软件对已经设计好的一个底发射的VECSEL芯片结构进行仿真,获得了量子阱有源区的带隙结构、材料增益曲线及子腔谐振谱线等特性。结果表明,InGaAs/GaAsP/AlGaAs材料体系能够有效地吸收808 nm的泵浦光,产生足够多的光生载流子(电子—空穴对),这些载流子能轻易地渡越应变补偿层,被量子阱俘获,产生复合发光。其发光带隙1.25 eV,相应波长992 nm,接近设计波长980 nm。InGaAs的材料增益峰值波长正好在980 nm处,增益系数高达4 000 cm-1。InGaAs/GaAsP/AlGaAs量子阱的谐振峰值波长为983 nm,与980nm的分布布拉格反射镜(DBR)的反射中心波长非常接近,其峰值功率高达23 dB,理论上能够获得较大的输出功率。 展开更多
关键词 C42+分子 电声耦合 Td对称性 哈密顿量 杨-泰勒畸变 能级分裂
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From MEMS to NEMS: Smart Chips with Senses and Muscles
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作者 Ali Jazairy 《Journal of Chemistry and Chemical Engineering》 2013年第10期1001-1005,共5页
The last half-century was transformed by the electronic revolution that essentially reproduced the human brain and its computing capacity on a chip. But over time, scientists have realized that something was missing t... The last half-century was transformed by the electronic revolution that essentially reproduced the human brain and its computing capacity on a chip. But over time, scientists have realized that something was missing to give life, so to speak, to the small chip with a brain: One needed to awaken its senses and develop its muscles! This challenge was solved through MEMS (micro electro mechanical systems). Indeed, MEMS today are equipped with the sense of sight, smell, hearing, taste and touch through microsensors. They are also capable of physical exertion through small muscles called microactuators. These new capabilities open wide fields of imagination and important specific applications. 展开更多
关键词 MEMS MOEMS (micro opto electro mechanical systems) NEMS (nano electro mechanical systems) wavelength-tunable FP (Fabry-P6rot) interferometer DWDM (dense wavelength division multiplexing) telecommunication vecselS (vertical external cavity surface emitting lasers).
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光泵浦外腔半导体激光器的研究进展 被引量:1
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作者 张守权 邵志强 《激光与红外》 CAS CSCD 北大核心 2016年第2期127-131,共5页
从谐振腔和半导体增益介质的角度介绍了光泵浦外腔面发射半导体激光器的基本结构,评述了国内外在该领域的最新研究进展,探讨了该类型激光器在大功率、小型化技术方面的发展前景。
关键词 谐振腔 半导体增益介质 光泵浦垂直外腔面发射半导体激光器 大功率
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半导体激光器
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《光机电信息》 2005年第9期26-26,共1页
Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is no... Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking. 展开更多
关键词 半导体激光器 电源组件 控制面板 工业应用 时间分配 光纤 芯径 系统化 振荡
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Comprehensive and fully self-consistent modeling of modern semiconductor lasers 被引量:1
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作者 W.Nakwaski R.P.Sarza?a 《Journal of Semiconductors》 EI CAS CSCD 2016年第2期45-56,共12页
The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers d... The fully self-consistent model of modern semiconductor lasers used to design their advanced structures and to understand more deeply their properties is given in the present paper. Operation of semiconductor lasers de- pends not only on many optical, electrical, thermal, recombination, and sometimes mechanical phenomena taking place within their volumes but also on numerous mutual interactions between these phenomena. Their experimental investigation is quite complex, mostly because of miniature device sizes. Therefore, the most convenient and exact method to analyze expected laser operation and to determine laser optimal structures for various applications is to examine the details of their performance with the aid of a simulation of laser operation in various considered condi- tions. Such a simulation of an operation of semiconductor lasers is presented in this paper in a full complexity of all mutual interactions between the above individual physical processes. In particular, the hole-buming effect has been discussed. The impacts on laser performance introduced by oxide apertures (their sizes and localization) have been analyzed in detail. Also, some important details concerning the operation of various types of semiconductor lasers are discussed. The results of some applications of semiconductor lasers are shown for successive laser structures. 展开更多
关键词 semiconductor lasers simulation model EEL VCSEL vecsel DBF QCL
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An ultra-narrow linewidth solution-processed organic laser 被引量:2
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作者 Oussama Mhibik Sebastien Forget +4 位作者 Dan Ott George Venus Ivan Divliansky Leonid Glebov Sebastien Chénais 《Light(Science & Applications)》 SCIE EI CAS CSCD 2016年第1期660-664,共5页
Optically pumped lasers based on solution-processed thin-film gain media have recently emerged as low-cost,broadly tunable,and versatile active photonics components that can fit any substrate and are useful for,e.g.,c... Optically pumped lasers based on solution-processed thin-film gain media have recently emerged as low-cost,broadly tunable,and versatile active photonics components that can fit any substrate and are useful for,e.g.,chemo-or biosensing or visible spectroscopy.Although single-mode operation has been demonstrated in various resonator architectures with a large variety of gain media-including dye-doped polymers,organic semiconductors,and,more recently,hybrid perovskites-the reported linewidths are typically on the order of a fraction of a nanometer or broader,i.e.,the coherence lengths are no longer than a few millimeters,which does not enable high-resolution spectroscopy or coherent sensing.The linewidth is fundamentally constrained by the short photon cavity lifetime in the standard resonator geometries.We demonstrate here a novel structure for an organic thin-film solid-state laser that is based on a vertical external cavity,wherein a holographic volume Bragg grating ensures both spectral selection and output coupling in an otherwise very compact(,cm3)design.Under short-pulse(0.4 ns)pumping,Fourier-transform-limited laser pulses are obtained,with a full width at half-maximum linewidth of 900 MHz(1.25 pm).Using 20-ns-long pump pulses,the linewidth can be further reduced to 200 MHz(0.26 pm),which is four times above the Fourier limit and corresponds to an unprecedented coherence length of 1m.The concept is potentially transferrable to any type of thin-film laser and can be ultimately made tunable;it also represents a very compact alternative to bulky grating systems in dye lasers. 展开更多
关键词 narrow linewidth organic lasers vecsel volume Bragg grating
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基于增益特性的光抽运垂直外腔面发射激光器优化设计 被引量:1
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作者 华玲玲 杨阳 《光学学报》 EI CAS CSCD 北大核心 2013年第3期183-191,共9页
介绍了光抽运垂直外腔面发射激光器的材料增益特性,以InGaAs/AlGaAs应变量子阱系统为例,建立了将带边偏置、能带结构和材料增益系统结合起来的理论模型。用Model-Solid模型确定带边偏置比,然后采用导带抛物线近似及价带6×6Luttinge... 介绍了光抽运垂直外腔面发射激光器的材料增益特性,以InGaAs/AlGaAs应变量子阱系统为例,建立了将带边偏置、能带结构和材料增益系统结合起来的理论模型。用Model-Solid模型确定带边偏置比,然后采用导带抛物线近似及价带6×6Luttinger哈密顿量精确计算了能带结构和材料增益。基于对材料增益特性的分析研究,优化设计了1μm波段的量子阱有源区,分别对量子阱的阱宽、阱深和阱的构成形式进行了优化设计并得到了最优选择,为光抽运垂直外腔面发射激光器的优化设计提供了理论依据。 展开更多
关键词 激光器 光抽运垂直外腔面发射激光器 优化设计 6×6 Luttinger哈密顿量 材料增益 能带结构
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Recent advances in development of vertical-cavity based short pulse source at 1.55 μm
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作者 Zhuang ZHAO Sophie BOUCHOULE Jean-Christophe HARMAND Gilles PATRIARCHE Guy AUBIN Jean-Louis OUDAR 《Frontiers of Optoelectronics》 EI CSCD 2014年第1期1-19,共19页
This paper reviews and discusses recent developments in passively mode-locked vertical external cavity surface emitting lasers (ML-VECSELs) for short pulse generation at 1.55 gin. After comparing ML- VECSELs to othe... This paper reviews and discusses recent developments in passively mode-locked vertical external cavity surface emitting lasers (ML-VECSELs) for short pulse generation at 1.55 gin. After comparing ML- VECSELs to other options for short pulse generation, we reviewed the results of ML-VECSELs operating at telecommunication wavelength and point out the chal- lenges in achieving sub-picosecond operation from a ML- VECSEL at 1.55 gm. We described our recent work in the VECSELs and semiconductor saturable absorber mirrors (SESAMs), their structure design, optimization and characterization, with the goal of moving the pulse width from picosecond to sub-picosecond. 展开更多
关键词 semiconductor laser vertical external cavitysurface emitting laser vecsel indium phosphide heatdissipation saturable absorber mirror MODE-LOCKING
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Vertical-external-cavity surface-emitting lasers and quantum dot lasers
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作者 Guangcun SHAN Xinghai ZHAO +2 位作者 Mingjun HU Chan-Hung SHEIK WeiHUANG 《Frontiers of Optoelectronics》 2012年第2期157-170,共14页
The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular... The use of cavity to manipulate photon emission of quantum dots (QDs) has been opening unprecedented opportunities for realizing quantum functional nanophotonic devices and quantum information devices. In particular, in the field of semiconductor lasers, QDs were introduced as a superior alternative to quantum wells (QWs) to suppress the temperature dependence of the threshold current in vertical-external-cavity surfaceemitting lasers (VECSELs). In this work, a review of properties and development of semiconductor VECSEL devices and QD laser devices is given. Based on the features of VECSEL devices, the main emphasis is put on the recent development of technological approach on semiconductor QD VECSELs. Then, from the viewpoint of both single QD nanolaser and cavity quantum electro- dynamics (QED), a single-QD-cavity system resulting from the strong coupling of QD cavity is presented. In this review, we will cover both fundamental aspects and technological approaches of QD VECSEL devices. Lastly, the presented review here has provided deep insight into useful guideline for the development of QD VECSEL technology, future quantum functional nanophotonic devices and monolithic photonic integrated circuits (MPhlCs). 展开更多
关键词 vertical-external-cavity surface-emittinglasers vecsels) quantum dot (QD) QD laser quantumelectrodynamics (QED) cavity QED
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