ZnO varistor ceramics doped with Bi2O3, Sb2O3, CO2O3, Cr2O3, and MnO2 were prepared separately by two high-energy ball milling processes： oxide-doped and varistor ceramic powder. A comparison in the electrical and mi...ZnO varistor ceramics doped with Bi2O3, Sb2O3, CO2O3, Cr2O3, and MnO2 were prepared separately by two high-energy ball milling processes： oxide-doped and varistor ceramic powder. A comparison in the electrical and microstructural properties of the samples obtained by both methods was made. The best results on these characteristics were achieved through the high-energy ball milling varistor ceramic powder route, obtaining a nonlinear coefficient of 57 and a breakdown field of 617 V/mm at a sintering temperature of 1000 ℃ for 3 h. The samples synthesized by this technique show not only high density value, 95% of the theoretical density, but also a homogeneous microstructure, which compete with those obtained by the high-energy ball milling oxide-doped powder route. With the advantage that the high-energy ball milling varistor ceramic powder route can refine grain, increase the driving force of sintering, accelerate the sintering process, and reduce the sintering temperature.展开更多
The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor...The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor increases with the content of Nd_2O_3 in the range of 0～0.04 (%,mol fraction). However when the content of Nd_2O_3 is more than 0.04 (%,mol fraction),the varistor voltage of ZnO varistor decreases with the content increase. The microstructure analysis indicates that a small amount of new compound with Nd exists at ZnO grain boundary and hinders the movement of grain boundary,which decreases the size of ZnO grain and makes the grain size and distribution homogeneous,as a result,additive (Nd_2O_3) raises the varistor voltage of the varistor greatly.展开更多
Semiconducting SrTiO 3 based voltage sensing and dielectric ceramics were prepared by single step sintering with Li 2CO 3 SiO 2 as liquid phase additives.The effects of the content of liquid phase,the ratio o...Semiconducting SrTiO 3 based voltage sensing and dielectric ceramics were prepared by single step sintering with Li 2CO 3 SiO 2 as liquid phase additives.The effects of the content of liquid phase,the ratio of Li/Si and the sintering temperatures on properties were discussed in terms of electrical properties and microstructures of materials.The results showed thatSrTiO 3 based varistor ceramics,with 0.6 mol% Li 2CO 3 SiO 2(Li/Si=3/2) and sintered at 1 380 ℃ in graphite and N 2 reducing atomosphere,had excellent current volatage sensing and dielectric characteristics.展开更多
The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the ...The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the range from 875 to 950 °C decreased the densities of sintered pellets in the range of 5.55 to 5.45 g/cm3 and increased the average grain size in the range of 4.1 to 8.8 ？m. The breakdown field decreased noticeably from 7443 to 1064 V/cm with increasing sintering temperature from 875 to 950 °C. The varistor ceramics sintered at 900 ？C exhibited nonlinear properties, with 49.4 in the nonlinear coefficient and 0.21 m A/cm2 in the leakage current density. The dielectric constant increased greatly from 440.1 to 2197.2 with increasing sintering temperature from 875 to 950 °C; however, the dissipation factor exhibited a fluctuation between 0.237 and 0.5. These ceramic compositions and sintering conditions can be applied to the development of advanced multiplayer varistors with silver as an inner electrode.展开更多
Semiconducting SrTiO 3 based voltage sensing and dielectric ceramics were prepared by single step sintering with Li 2CO 3 SiO 2 as liquid phase additives.The effects of the content of liquid phase,the ratio o...Semiconducting SrTiO 3 based voltage sensing and dielectric ceramics were prepared by single step sintering with Li 2CO 3 SiO 2 as liquid phase additives.The effects of the content of liquid phase,the ratio of Li/Si and the sintering temperatures on properties were discussed in terms of electrical properties and microstructures of materials.The results showed thatSrTiO 3 based varistor ceramics,with 0.6 mol% Li 2CO 3 SiO 2(Li/Si=3/2) and sintered at 1 380 ℃ in graphite and N 2 reducing atomosphere,had excellent current volatage sensing and dielectric characteristics.展开更多
The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron micro...The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase （Zn2SiO4） and a glass phase （Bi2SiO5） are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8-69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.展开更多
Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, le...Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor con- centration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.展开更多
The microstructure, electrical properties and density of ZnO-based varistor ceramics with different Er2O3 content prepared by high-energy ball milling （HEBM） and sintered at 800℃ were investigated. With increasing ...The microstructure, electrical properties and density of ZnO-based varistor ceramics with different Er2O3 content prepared by high-energy ball milling （HEBM） and sintered at 800℃ were investigated. With increasing Er2O3 content, the ZnO grain size decreases due to the Er-rich phases inhibiting grain growth ; and nonlinear coefficient （ α ） decreases because of the decrease of barrier height （φB） The breakdown voltage （Eb） and density increase, whereas leakage current （IL） decreases with increasing Er2O3 content. The barrier height （φB）, donor concentration （Nd）, density of interface states （Ns） decrease and barrier width （ω） increases with increasing Er2O3 content due to acceptor effect of Er2O3 in varistor ceramics.展开更多
The effects of rare-earth La_2O_3 addition on microstructures and electrical properties of SrTiO_3 ceramics were investigated. Semiconductor SrTiO_3-based voltage-sensing and dielectric dual functional ceramics was pr...The effects of rare-earth La_2O_3 addition on microstructures and electrical properties of SrTiO_3 ceramics were investigated. Semiconductor SrTiO_3-based voltage-sensing and dielectric dual functional ceramics was prepared by a single step sintering technology in this study, and the effects of the content of La_2O_3 on characteristics of the product were discussed in terms of microstructures and electrical properties of materials. The results show that SrTiO_3-based ceramics doped with La_2O_3 exhibits more homogeneous grain distribution, greater grain size, and excellent voltage sensing and dielectric characteristics than those without La_2O_3 doping. The samples doped with 1 1% La_2O_3 were sintered at 1420 ℃ in N_2+C weak reducing atmosphere. The average grain size of the samples doped with La_2O_3 is 40 μm, the breakdown voltage of 19.7 V·mm^(-1), the nonlinear exponent of 7.2, and dielectric constant of 22500. The results reveal that final products are suitable to use in low operating voltage.展开更多
The electrical properties and ageing behavior of the rare earths （Pr6O11-Er2O3-Y2O3）-doped ZnO varistor ceramics were systematically investigated at sintering temperature range of 1335-1350°C. With an increase ...The electrical properties and ageing behavior of the rare earths （Pr6O11-Er2O3-Y2O3）-doped ZnO varistor ceramics were systematically investigated at sintering temperature range of 1335-1350°C. With an increase in the sintering temperature, the sintered density increased from 5.41 to 5.64g/cm3 and the average grain size increased from 5.8 to 7.9μm. The varistor properties and ageing behavior were significantly affected by small sintering temperature range of 1335-1350°C. The breakdown field noticeably decreased from 5767 to 3628V/cm with an increase in the sintering temperature. The varistor ceramics exhibited the highest nonlinear coefficient （43.2） at the sintering temperature of 1340°C. The varistor ceramics sintered at 1350°C exhibited a surprisingly excellent stability by exhibiting 0.3% in the variation rate of the breakdown field and 0.3% in the variation rate of the nonlinear coefficient for ageing stress of 0.95 E1mA/150°C/24 h.展开更多
A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150oC. X-ray diffractometry （XRD） and scanning elec...A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150oC. X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics. A DC parameter instrument for varistor ceramics was applied to investigate the electronic properties and V-I characteristics. The results showed that there were no changes in crystal structure with Sc2O3-doped varistor ceramics and that the average size of ZnO grain increased first and then decreased. The best electronic characteristics of the varistor ceramics prepared by high-energy ball milling were found in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3 -based ceramics sintered at 1000 oC, which exhibited a threshold voltage of 821 V/mm, nonlinear coefficient of 62.1 and leakage current of 0.16 μA.展开更多
The microstructure, electrical properties, and density of Dy2O3-doped ZnO-based varistor ceramics, prepared using high-energy ball milling （HEBM） and sintered at 800℃, were investigated by increasing the cooling ra...The microstructure, electrical properties, and density of Dy2O3-doped ZnO-based varistor ceramics, prepared using high-energy ball milling （HEBM） and sintered at 800℃, were investigated by increasing the cooling rate in the order of H （slow cooling in furnace） → L （cooling in furnace） → K （cooling in air）. With the increase in cooling rate, the grain size and density decreased, the breakdown voltage （VImA/mm） increased, and the nonlinear coefficient （α） and leakage current （IL） exhibited extremum. The sample with the cooling type L showed the best properties with the breakdown voltage of 2650 V/ram, o：of 20.3, IL of 5.2 laA, and density of 5.42 g/cm^3. The barrier height （ФB）, donor concentration （Nd）, density of the interface states （Nd）, and barrier width （ω） all exhibited extremum during the alteration in cooling rate. The different relative amount of Bi-rich phase and its distribution as well as the characteristic parameters of grain boundary, resulting from the alteration of cooling rate, led to the changes in the properties of varistor ceramics.展开更多
Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics sa...Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry(XRD)and scanning electron microscopy(SEM);at the same time,the electrical properties and V-I characteristics of the varistor ceramics samples were investigated by a DC parameter instrument for varistors.The results show that the ZnO-Bi2O3-based varistor ceramics with 0.3%Lu2O3(molar fraction)sintered at 950°C exhibit comparatively ideal comprehensive electrical properties.The XRD analysis of the samples shows the presence of ZnO,Bi-rich,spinel Zn7Sb2O12 and Lu2O3-based phases.展开更多
ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were...ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics, and a DC parameter instrument for varistor ceramics was applied to investigate their electrical properties and V-I characteristics. The XRD analysis of the samples shows that the ZnO phase, Bi2O3 phase, ZnTSbaOl2-type spinel phase and Zn2Bi3Sb3O14-type pyrochlore are present, and the Yb2O3 phases and Sb2O4 phases are found in varistor ceramics with increasing amounts of Yb2O3. The average size of ZnO grain firstly increases and then decreases with the increase of Yb2O3 content. The result also shows that the threshold voltage is between 656 V/nun and 1 232 V/mm, the nonlinear coefficient is in the range of 14.1-22.3, and the leakage current is between 0.60 μA and 19.6 μA. The 0.20% Yb2O3-added ZnO-Bi2O3-based varistor ceramics sintered at 900 ℃ have the best electrical characteristics.展开更多
The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperat...The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperature increased, the average grain size increased from 6.1 to 8.7μm and the sintered density decreased from 5.52 to 5.43 g/cm3. The breakdown field decreased from 3856 to 922 V/cm with an increase in the sintering temperature up to 900 °C, whereas a further increase to 2352 V/cm at 925 °C. The nonlinear coefficient increased pronouncedly from 4.6 to 30.0 with an increase in the sintering temperature. The varistor ceramics sintered at 850 °C exhibited the best clamping characteristics, with the clamp voltage ratio of the range of 2.22-2.88 for pulse current of 1-25 A. The varistor ceramics sintered at 925 °C exhibited the strongest stability, with %ΔE1 mA/cm2=-8.8% after applying the multi-pulse current of 25 A.展开更多
The effect of different molar ratios of Y2O3 and Y（NO3）3 on the microstructure and electrical response of ZnO-Bi203-based varistor ceramics sintered at 1 000 ℃ was investigated, and the mechanism by which this dopi...The effect of different molar ratios of Y2O3 and Y（NO3）3 on the microstructure and electrical response of ZnO-Bi203-based varistor ceramics sintered at 1 000 ℃ was investigated, and the mechanism by which this doping improves the electrical characteristics of ZnO-Bi203-based varistor ceramics was discussed. With increasing amounts of Y（NO3）3 or Y2O3 in the starting composition, Y2O3, Sb204 and Y-containing Bi-rich phase form, and the average grain size significantly decreases. The average grain size significantly decreases as the contents of rare earth compounds of Y（NO3）3 or Y2O3 increase. The maximum value of the nonlinear coefficient is found at 0.16% Y（NO3）3 or 0.02% YaO3 （molar fraction） doped varistor ceramics, and there is an increase of 122% or 35% compared with the varistor ceramics without Y（NO3）3 or Y2O3. The threshold voltage VT of Y（NO3）3 and Y2O3 reaches at 1 460 V/mm and 1 035 V/ram, respectively. The results also show that varistor sample doped with Y（NO3）3 has a remarkably more homogeneous and denser microstructure in comparison to the sample doped with Y2O3.展开更多
The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics was investigated. Based on single sintering process, six disk samples of （Sr, Bi, Si, Ta）-...The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics was investigated. Based on single sintering process, six disk samples of （Sr, Bi, Si, Ta）-doped TiO2-based varistor ceramics were fabricated by sintering at 1 250 ℃ for 0.5-5.0 h. The samples were characterized by X-ray diffraction, voltage-current characteristics, energy spectra, metallographs, breakdown voltages, and apparent dielectric constant. It is found that the breakdown electrical field intensity at a current density of 10 mA/cma decreases from 5.5 to 4.1 V/mm first and then increases to 7.0 V/mm, the nonlinear coefficient increases from 2.39 to 2.62 first and then decreases to 2.42, and the apparent dielectric constant increases from 98 200 to 1l5 049 first and then decreases to 73 865 with the soaking time increasing from 0.5 to 5.0 h. These indicate that the optimal soaking time is 2.0-3.0 h considering both nonlinear electrical behavior and dielectric properties.展开更多
We investigated the influence of soaking time on the semi-conductivity and nonlinear electrical properties of TiO2- based varistor ceramic samples. We used a single sintering process and fabricated six disk samples of...We investigated the influence of soaking time on the semi-conductivity and nonlinear electrical properties of TiO2- based varistor ceramic samples. We used a single sintering process and fabricated six disk samples of （Sr, Bi, Si, Ta）-doped TiO2- based varistor ceramics sintered at 1 250℃ for 0.5 h, 1.0 h, 2.0 h, 3.0 h, 4.0 h, and 5.0 h, respectively. The samples were characterized by X-ray diffraction, breakdown voltage, and complex impedance. The results show that as the soaking time increases from 0.5 h to 5.0 h, the breakdown voltage drops before rising while the nonlinear coefficient increases and then decreases. We suggest that, considering both grain semi-conductivity and nonlinear electrical properties of the TiO2-based varistor ceramics, the optimal soaking time is between 2.0 h and 3.0 h.展开更多
ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that...ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The Vc decreases with the increase of sintered temperature, when the In2O3 content is fixed(0. 98 %, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.展开更多
Significantly enhanced varistor properties via tailoring interface states were obtained in Ca_(1-2x/3)Y_(x)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12) composite ceramics.The breakdown field was improved to 35.8 kV cm^(-1)...Significantly enhanced varistor properties via tailoring interface states were obtained in Ca_(1-2x/3)Y_(x)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12) composite ceramics.The breakdown field was improved to 35.8 kV cm^(-1) and the nonlinear coefficient in 0.1-1 mA cm^(-2) was enhanced to 14.6 for Ca_(0.67)Y_(0.5)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12).Noticeably,the withstand voltage of single grain boundary reached up to 24 V while the reported ones were constant to about 3 V.Greatly improved properties were attributed to the formation of superior grain boundary rather than the reduced grain size.Surprisingly,with distinct discrepancy of nonlinear performance in the composites,the resistance and activation energy of grain boundary exhibited little differences.Based on the double Schottky barrier at grain boundary and the field-assisted thermal emission model,it was found that the excellent electrical nonlinearity arose from the formation of deeper and broader interface states at grain boundary.In this case,interface states were not easily entirely filled and the barrier could maintain its height under applied voltage.This work provides a novel routine for enhancing the varistor properties of CaCu_(3)Ti_(4)O_(12) based ceramics by manipulating interface states at grain boundary.展开更多
基金Project (BK2011243) supported by the Natural Science Foundation of Jiangsu Province,ChinaProject (EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment,China+4 种基金Project (KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing,ChinaProject (KFJJ201105) supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject (2011-22) supported by State Key Laboratory of Inorganic Synthesis and Preparative Chemistry,ChinaProject (10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,ChinaProject (11JDG084) supported by the Research Foundation of Jiangsu University,China
文摘ZnO varistor ceramics doped with Bi2O3, Sb2O3, CO2O3, Cr2O3, and MnO2 were prepared separately by two high-energy ball milling processes： oxide-doped and varistor ceramic powder. A comparison in the electrical and microstructural properties of the samples obtained by both methods was made. The best results on these characteristics were achieved through the high-energy ball milling varistor ceramic powder route, obtaining a nonlinear coefficient of 57 and a breakdown field of 617 V/mm at a sintering temperature of 1000 ℃ for 3 h. The samples synthesized by this technique show not only high density value, 95% of the theoretical density, but also a homogeneous microstructure, which compete with those obtained by the high-energy ball milling oxide-doped powder route. With the advantage that the high-energy ball milling varistor ceramic powder route can refine grain, increase the driving force of sintering, accelerate the sintering process, and reduce the sintering temperature.
文摘The influence of additive Nd_2O_3 on varistor voltage and microstructure of ZnO varistor was studied,and its mechanism was proposed from theoretical analysis. The results show that the varistor voltage of ZnO varistor increases with the content of Nd_2O_3 in the range of 0～0.04 (%,mol fraction). However when the content of Nd_2O_3 is more than 0.04 (%,mol fraction),the varistor voltage of ZnO varistor decreases with the content increase. The microstructure analysis indicates that a small amount of new compound with Nd exists at ZnO grain boundary and hinders the movement of grain boundary,which decreases the size of ZnO grain and makes the grain size and distribution homogeneous,as a result,additive (Nd_2O_3) raises the varistor voltage of the varistor greatly.
文摘Semiconducting SrTiO 3 based voltage sensing and dielectric ceramics were prepared by single step sintering with Li 2CO 3 SiO 2 as liquid phase additives.The effects of the content of liquid phase,the ratio of Li/Si and the sintering temperatures on properties were discussed in terms of electrical properties and microstructures of materials.The results showed thatSrTiO 3 based varistor ceramics,with 0.6 mol% Li 2CO 3 SiO 2(Li/Si=3/2) and sintered at 1 380 ℃ in graphite and N 2 reducing atomosphere,had excellent current volatage sensing and dielectric characteristics.
文摘The effect of sintering temperature on microstructure and varistor properties of Zn-V-O-based ceramics incorporated with Mn-Nb-Tb was investigated. The results showed that the increase of sintering temperature in the range from 875 to 950 °C decreased the densities of sintered pellets in the range of 5.55 to 5.45 g/cm3 and increased the average grain size in the range of 4.1 to 8.8 ？m. The breakdown field decreased noticeably from 7443 to 1064 V/cm with increasing sintering temperature from 875 to 950 °C. The varistor ceramics sintered at 900 ？C exhibited nonlinear properties, with 49.4 in the nonlinear coefficient and 0.21 m A/cm2 in the leakage current density. The dielectric constant increased greatly from 440.1 to 2197.2 with increasing sintering temperature from 875 to 950 °C; however, the dissipation factor exhibited a fluctuation between 0.237 and 0.5. These ceramic compositions and sintering conditions can be applied to the development of advanced multiplayer varistors with silver as an inner electrode.
文摘Semiconducting SrTiO 3 based voltage sensing and dielectric ceramics were prepared by single step sintering with Li 2CO 3 SiO 2 as liquid phase additives.The effects of the content of liquid phase,the ratio of Li/Si and the sintering temperatures on properties were discussed in terms of electrical properties and microstructures of materials.The results showed thatSrTiO 3 based varistor ceramics,with 0.6 mol% Li 2CO 3 SiO 2(Li/Si=3/2) and sintered at 1 380 ℃ in graphite and N 2 reducing atomosphere,had excellent current volatage sensing and dielectric characteristics.
文摘The microstructure and electrical properties of ZnO-based varistors with the SiO2 content in the range of 0-1.00mol% were prepared by a solid reaction route. The varistors were characterized by scanning electron microscopy, X-ray diffraction, energy-dispersive X-ray spectrometry, inductively coupled plasma-atomic emission spectrometry, and X-ray photoelectron spectroscopy. The results indicate that the average grain size of ZnO decreases with the SiO2 content increasing. A new second phase （Zn2SiO4） and a glass phase （Bi2SiO5） are found. Element Si mainly exists in the grain boundary and plays an important role in controlling the Bi2O3 vaporization. The electric measurement shows that the incorporation of SiO2 can significantly improve the nonlinear properties of ZnO-based varistors, and the nonlinear coefficients of the varistors with SiO2 are in the range of 36.8-69.5. The varistor voltage reaches the maximum value of 463 V/mm and the leakage current reaches the minimum value of 0.11 μA at the SiO2 content of 0.75mol%.
文摘Y2O3-doped ZnO-based varistor ceramics were prepared using high-energy ball milling （HEBM） and low-temperature sin- tering technique, with voltage-gradient of 1934-2197 V/mm, non-linear coefficients of 20.8-21.8, leakage currents of 0.59-1.04 μA, and densities of 5.46-5.57 g/cm3. With increasing Y2O3 content, the voltage-gradient increases because of the decrease of ZnO grain size; the non-linear coefficient and the leakage current improve but the density decreases because of more porosity; the donor con- centration and density of interface states decrease, whereas the barrier height and width increase because of the acceptor effect of Y2O3 in varistor ceramics.
基金Project supported by National Natural Science Foundation of China (50471045) Shanghai Nano-Technology PromotionCenter (0452nm026)
文摘The microstructure, electrical properties and density of ZnO-based varistor ceramics with different Er2O3 content prepared by high-energy ball milling （HEBM） and sintered at 800℃ were investigated. With increasing Er2O3 content, the ZnO grain size decreases due to the Er-rich phases inhibiting grain growth ; and nonlinear coefficient （ α ） decreases because of the decrease of barrier height （φB） The breakdown voltage （Eb） and density increase, whereas leakage current （IL） decreases with increasing Er2O3 content. The barrier height （φB）, donor concentration （Nd）, density of interface states （Ns） decrease and barrier width （ω） increases with increasing Er2O3 content due to acceptor effect of Er2O3 in varistor ceramics.
基金Project supported by Science and Technology Foundation of Yunnan Province (2002GG-09)
文摘The effects of rare-earth La_2O_3 addition on microstructures and electrical properties of SrTiO_3 ceramics were investigated. Semiconductor SrTiO_3-based voltage-sensing and dielectric dual functional ceramics was prepared by a single step sintering technology in this study, and the effects of the content of La_2O_3 on characteristics of the product were discussed in terms of microstructures and electrical properties of materials. The results show that SrTiO_3-based ceramics doped with La_2O_3 exhibits more homogeneous grain distribution, greater grain size, and excellent voltage sensing and dielectric characteristics than those without La_2O_3 doping. The samples doped with 1 1% La_2O_3 were sintered at 1420 ℃ in N_2+C weak reducing atmosphere. The average grain size of the samples doped with La_2O_3 is 40 μm, the breakdown voltage of 19.7 V·mm^(-1), the nonlinear exponent of 7.2, and dielectric constant of 22500. The results reveal that final products are suitable to use in low operating voltage.
文摘The electrical properties and ageing behavior of the rare earths （Pr6O11-Er2O3-Y2O3）-doped ZnO varistor ceramics were systematically investigated at sintering temperature range of 1335-1350°C. With an increase in the sintering temperature, the sintered density increased from 5.41 to 5.64g/cm3 and the average grain size increased from 5.8 to 7.9μm. The varistor properties and ageing behavior were significantly affected by small sintering temperature range of 1335-1350°C. The breakdown field noticeably decreased from 5767 to 3628V/cm with an increase in the sintering temperature. The varistor ceramics exhibited the highest nonlinear coefficient （43.2） at the sintering temperature of 1340°C. The varistor ceramics sintered at 1350°C exhibited a surprisingly excellent stability by exhibiting 0.3% in the variation rate of the breakdown field and 0.3% in the variation rate of the nonlinear coefficient for ageing stress of 0.95 E1mA/150°C/24 h.
基金Project supported by Natural Science Foundation of Jiangsu Province(BK2011243,BK2012156)the Specialized Research Fund for the Doctoral Program of Higher Education of China(20123227120021)+5 种基金Universities Natural Science Research Project of Jiangsu Province(10KJD430002)financially supported by the State Key Laboratory of Electrical Insulation and Power Equipment(EIPE11204)State Key Laboratory of New Ceramic and Fine Processing(KF201104)Project supported by the Opening Project of State key Laboratory of Electronic ThinFilms and Integrated Devices(KFJJ201105)Research Foundation of Jiangsu University(11JDG084)Application Program for Basic Research of Changzhou(CJ20125001)
文摘A series of ZnO-Bi2O3-based varistor ceramics doped with 0-0.4 mol.% Sc2O3 were prepared by high-energy ball milling and sintered at temperatures between 1000 and 1150oC. X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics. A DC parameter instrument for varistor ceramics was applied to investigate the electronic properties and V-I characteristics. The results showed that there were no changes in crystal structure with Sc2O3-doped varistor ceramics and that the average size of ZnO grain increased first and then decreased. The best electronic characteristics of the varistor ceramics prepared by high-energy ball milling were found in 0.3 mol.% Sc2O3-doped ZnO-Bi2O3 -based ceramics sintered at 1000 oC, which exhibited a threshold voltage of 821 V/mm, nonlinear coefficient of 62.1 and leakage current of 0.16 μA.
基金This work is financially supported by the National Natural Science Foundation of China (No. 50471045)Shanghai Nano-technology Promotion Center (No. 0452nm026).
文摘The microstructure, electrical properties, and density of Dy2O3-doped ZnO-based varistor ceramics, prepared using high-energy ball milling （HEBM） and sintered at 800℃, were investigated by increasing the cooling rate in the order of H （slow cooling in furnace） → L （cooling in furnace） → K （cooling in air）. With the increase in cooling rate, the grain size and density decreased, the breakdown voltage （VImA/mm） increased, and the nonlinear coefficient （α） and leakage current （IL） exhibited extremum. The sample with the cooling type L showed the best properties with the breakdown voltage of 2650 V/ram, o：of 20.3, IL of 5.2 laA, and density of 5.42 g/cm^3. The barrier height （ФB）, donor concentration （Nd）, density of the interface states （Nd）, and barrier width （ω） all exhibited extremum during the alteration in cooling rate. The different relative amount of Bi-rich phase and its distribution as well as the characteristic parameters of grain boundary, resulting from the alteration of cooling rate, led to the changes in the properties of varistor ceramics.
基金Project(50902061)supported by the National Natural Science Foundation of ChinaProject(2011-22)supported by the State Key Laboratory of Inorganic Synthesis and Preparative Chemistry of Jilin University,China+3 种基金Project(20100471380)supported by the China Postdoctoral Science FoundationProject(J50102)supported by the Leading Academic Discipline Program of Shanghai Municipal Education Commission,ChinaProject(10KJD430002)supported by the Universities Natural Science Research Program of Jiangsu Province,ChinaProject(2010002)supported by the Jiangsu University Undergraduate Practice-Innovation Training Program,China
文摘Lu2O3-doped ZnO-Bi2O3-based varistor ceramics samples were prepared by a conventional mixed oxide route and sintered at temperatures in the range of 900-1 000°C,and the microstructures of the varistor ceramics samples were characterized by X-ray diffractometry(XRD)and scanning electron microscopy(SEM);at the same time,the electrical properties and V-I characteristics of the varistor ceramics samples were investigated by a DC parameter instrument for varistors.The results show that the ZnO-Bi2O3-based varistor ceramics with 0.3%Lu2O3(molar fraction)sintered at 950°C exhibit comparatively ideal comprehensive electrical properties.The XRD analysis of the samples shows the presence of ZnO,Bi-rich,spinel Zn7Sb2O12 and Lu2O3-based phases.
基金Project(BK2011243) supported by the Natural Science Foundation of Jiangsu Province,ChinaProject(2007DA10512711408) supported by the Visiting Scholarship of State Key Laboratory of Power Transmission Equipment & System Security and New Technology (Chongqing University),China+4 种基金Project(EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment,ChinaProject(KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing,ChinaProject(KFJJ201105) supported by the Opening Project of State Key Laboratory of Electronic Thin Films and Integrated Devices,ChinaProject(10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province,ChinaProject(11JDG084) supported by the Research Foundation of Jiangsu University,China
文摘ZnO-Bi2O3-based varistor ceramics doped with Yb2O3 in the range from 0 to 0.4% （molar fraction） were obtained by a solid reaction route. The X-ray diffractometry （XRD） and scanning electron microscopy （SEM） were applied to characterize the phases and microstructure of the varistor ceramics, and a DC parameter instrument for varistor ceramics was applied to investigate their electrical properties and V-I characteristics. The XRD analysis of the samples shows that the ZnO phase, Bi2O3 phase, ZnTSbaOl2-type spinel phase and Zn2Bi3Sb3O14-type pyrochlore are present, and the Yb2O3 phases and Sb2O4 phases are found in varistor ceramics with increasing amounts of Yb2O3. The average size of ZnO grain firstly increases and then decreases with the increase of Yb2O3 content. The result also shows that the threshold voltage is between 656 V/nun and 1 232 V/mm, the nonlinear coefficient is in the range of 14.1-22.3, and the leakage current is between 0.60 μA and 19.6 μA. The 0.20% Yb2O3-added ZnO-Bi2O3-based varistor ceramics sintered at 900 ℃ have the best electrical characteristics.
文摘The effect of sintering temperature on microstructure, electrical properties, and pulse aging behavior of （V2O5-Mn3O4-Er2O3）-doped zinc oxide varistor ceramics was systematically studied. When the sintering temperature increased, the average grain size increased from 6.1 to 8.7μm and the sintered density decreased from 5.52 to 5.43 g/cm3. The breakdown field decreased from 3856 to 922 V/cm with an increase in the sintering temperature up to 900 °C, whereas a further increase to 2352 V/cm at 925 °C. The nonlinear coefficient increased pronouncedly from 4.6 to 30.0 with an increase in the sintering temperature. The varistor ceramics sintered at 850 °C exhibited the best clamping characteristics, with the clamp voltage ratio of the range of 2.22-2.88 for pulse current of 1-25 A. The varistor ceramics sintered at 925 °C exhibited the strongest stability, with %ΔE1 mA/cm2=-8.8% after applying the multi-pulse current of 25 A.
基金Project(BK2011243) supported by the Natural Science Foundation of Jiangsu Province, ChinaProject(EIPE11204) supported by the State Key Laboratory of Electrical Insulation and Power Equipment, China+4 种基金Project(KF201104) supported by the State Key Laboratory of New Ceramic and Fine Processing, ChinaProject(KFJJ201105) supported by the Opening Program of State key Laboratory of Electronic Thin Films and Integrated Devices, ChinaProject(2011-22) supported by the State Key Laboratory of Inorganic Synthesis and Preparative Chemistry of Jilin University, ChinaProject(10KJD430002) supported by the Universities Natural Science Research Project of Jiangsu Province, ChinaProject(11JDG084) supported by the Research Foundation of Jiangsu University, China
文摘The effect of different molar ratios of Y2O3 and Y（NO3）3 on the microstructure and electrical response of ZnO-Bi203-based varistor ceramics sintered at 1 000 ℃ was investigated, and the mechanism by which this doping improves the electrical characteristics of ZnO-Bi203-based varistor ceramics was discussed. With increasing amounts of Y（NO3）3 or Y2O3 in the starting composition, Y2O3, Sb204 and Y-containing Bi-rich phase form, and the average grain size significantly decreases. The average grain size significantly decreases as the contents of rare earth compounds of Y（NO3）3 or Y2O3 increase. The maximum value of the nonlinear coefficient is found at 0.16% Y（NO3）3 or 0.02% YaO3 （molar fraction） doped varistor ceramics, and there is an increase of 122% or 35% compared with the varistor ceramics without Y（NO3）3 or Y2O3. The threshold voltage VT of Y（NO3）3 and Y2O3 reaches at 1 460 V/mm and 1 035 V/ram, respectively. The results also show that varistor sample doped with Y（NO3）3 has a remarkably more homogeneous and denser microstructure in comparison to the sample doped with Y2O3.
基金Project(50872001) supported by the National Natural Science Foundation of ChinaProjects(KJ2007B132, KJ2009A006Z) supported by the Scientific Research Foundation of Education Department of Anhui Province, ChinaProject(XJ200907) supported by the Foundation of Construction of Quality Project of Anhui University, China
文摘The influence of soaking time on the nonlinear electrical behavior and dielectric properties of TiO2-based varistor ceramics was investigated. Based on single sintering process, six disk samples of （Sr, Bi, Si, Ta）-doped TiO2-based varistor ceramics were fabricated by sintering at 1 250 ℃ for 0.5-5.0 h. The samples were characterized by X-ray diffraction, voltage-current characteristics, energy spectra, metallographs, breakdown voltages, and apparent dielectric constant. It is found that the breakdown electrical field intensity at a current density of 10 mA/cma decreases from 5.5 to 4.1 V/mm first and then increases to 7.0 V/mm, the nonlinear coefficient increases from 2.39 to 2.62 first and then decreases to 2.42, and the apparent dielectric constant increases from 98 200 to 1l5 049 first and then decreases to 73 865 with the soaking time increasing from 0.5 to 5.0 h. These indicate that the optimal soaking time is 2.0-3.0 h considering both nonlinear electrical behavior and dielectric properties.
基金Funded by the Natural Science Foundation of China (No. 50872001 and No. 50642038)the Scientific Research Foundation of Education Ministry of Anhui Province (No. 2005KJ224 and No. KJ2007B132)the Graduate Student Innovation Programs of Anhui University (No. 20072006)
文摘We investigated the influence of soaking time on the semi-conductivity and nonlinear electrical properties of TiO2- based varistor ceramic samples. We used a single sintering process and fabricated six disk samples of （Sr, Bi, Si, Ta）-doped TiO2- based varistor ceramics sintered at 1 250℃ for 0.5 h, 1.0 h, 2.0 h, 3.0 h, 4.0 h, and 5.0 h, respectively. The samples were characterized by X-ray diffraction, breakdown voltage, and complex impedance. The results show that as the soaking time increases from 0.5 h to 5.0 h, the breakdown voltage drops before rising while the nonlinear coefficient increases and then decreases. We suggest that, considering both grain semi-conductivity and nonlinear electrical properties of the TiO2-based varistor ceramics, the optimal soaking time is between 2.0 h and 3.0 h.
文摘ZnO varistors are prepared using the 0.1-0.3mm ZnO powders. The effects of the sintering temperature, contents of In2O3 doping on the non-linear properties of ZnO varistors have been investigated. Theresults show that this kind of ZnO powder has a high sintering activity. It is suitable for making the low voltage varistors. The Vc decreases with the increase of sintered temperature, when the In2O3 content is fixed(0. 98 %, mass fraction), and increases with the increase of In2O3 contents when the temperature is steady.
基金financially supported by the National Natural Science Foundation of China(No.51937008)the Science and Technology Project of State Grid Corporation of China(SGCC)(No.5216A01600W3)。
文摘Significantly enhanced varistor properties via tailoring interface states were obtained in Ca_(1-2x/3)Y_(x)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12) composite ceramics.The breakdown field was improved to 35.8 kV cm^(-1) and the nonlinear coefficient in 0.1-1 mA cm^(-2) was enhanced to 14.6 for Ca_(0.67)Y_(0.5)Cu_(3)Ti_(4)O_(12)-SrCu_(3)Ti_(4)O_(12).Noticeably,the withstand voltage of single grain boundary reached up to 24 V while the reported ones were constant to about 3 V.Greatly improved properties were attributed to the formation of superior grain boundary rather than the reduced grain size.Surprisingly,with distinct discrepancy of nonlinear performance in the composites,the resistance and activation energy of grain boundary exhibited little differences.Based on the double Schottky barrier at grain boundary and the field-assisted thermal emission model,it was found that the excellent electrical nonlinearity arose from the formation of deeper and broader interface states at grain boundary.In this case,interface states were not easily entirely filled and the barrier could maintain its height under applied voltage.This work provides a novel routine for enhancing the varistor properties of CaCu_(3)Ti_(4)O_(12) based ceramics by manipulating interface states at grain boundary.
