In the light of our previous result that the average bond energy E_h valuelines up across heterojunction interfaces,in this paper,the valence-band offsets in ten hete-rojunctions have been calculated using the E_h as ...In the light of our previous result that the average bond energy E_h valuelines up across heterojunction interfaces,in this paper,the valence-band offsets in ten hete-rojunctions have been calculated using the E_h as a reference level with the LMTO-ASAband-structure method.The calculated results are in excellent agreement with those fromthe more elaborate first-principles self-consistent interface calculations.As the presentmethod requires by far the smaller computational effort,it is very convenient for usingon medium-sized computers.展开更多
Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance（MR） of p-type diamond films, a revised model of valence band split-off over tempera...Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance（MR） of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films （Corbino discs）. It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.展开更多
The ternary alloy heterojunctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As are important materialswhich have been widely used in microwave and p...The ternary alloy heterojunctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As are important materialswhich have been widely used in microwave and photoelectric devices.The alloy hetero-junctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As（x=0.3）have great potential use in high electron mobili-ty transistors（HEMTs）,heterostructure insulated-gate FFTs（HIGFETs）and resonant tun-neling diodes（RTDs）.When x rises to 0.53,In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As can be widely used inthe high-speed electronic devices.The valence-band offset（the value of ΔE<sub>v</sub>展开更多
基金Project supported by the National Natural Science Foundation of China.
文摘In the light of our previous result that the average bond energy E_h valuelines up across heterojunction interfaces,in this paper,the valence-band offsets in ten hete-rojunctions have been calculated using the E_h as a reference level with the LMTO-ASAband-structure method.The calculated results are in excellent agreement with those fromthe more elaborate first-principles self-consistent interface calculations.As the presentmethod requires by far the smaller computational effort,it is very convenient for usingon medium-sized computers.
基金Project supported by the Chongqing City Education Commission of China (Grant No. 040804)
文摘Based on the analysis and the discussion of the influence of thermal ionization energy and various scatterings on magnetoresistance（MR） of p-type diamond films, a revised model of valence band split-off over temperature is put forward, and a corresponding calculation formula is given for the MR of p-type diamond films （Corbino discs）. It is shown that the theoretical calculation that the MR of diamond films changes with temperature is consistent with the experiment. The influence of Fermi energy level on MR of diamond films is discussed. Additionally, the thermal effect mechanism of MR in p-type diamond films is also explored.
基金Project supported by the National Natural Science Foundation of Chinathe Industrial Department of Xiamen Photoelectron Company.
文摘The ternary alloy heterojunctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As are important materialswhich have been widely used in microwave and photoelectric devices.The alloy hetero-junctions In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As（x=0.3）have great potential use in high electron mobili-ty transistors（HEMTs）,heterostructure insulated-gate FFTs（HIGFETs）and resonant tun-neling diodes（RTDs）.When x rises to 0.53,In<sub>x</sub>Ga<sub>1-x</sub>As/In<sub>x</sub>Al<sub>1-x</sub>As can be widely used inthe high-speed electronic devices.The valence-band offset（the value of ΔE<sub>v</sub>
