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Effect of grain size of primary α phase on bonding interface characteristic and mechanical property of press bonded Ti-6Al-4V alloy 被引量:3
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作者 李宏 李淼泉 +1 位作者 刘宏彬 张超 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第1期93-99,共7页
The effect of grain size of primary α phase on the bonding interface characteristic and shear strength of bond was investigated in the press bonding of Ti-6Al-4V alloy. The quantitative results show that the average ... The effect of grain size of primary α phase on the bonding interface characteristic and shear strength of bond was investigated in the press bonding of Ti-6Al-4V alloy. The quantitative results show that the average size of voids increases from 0.8 to 2.6 μm and the bonding ratio decreases from 90.9% to 77.8% with an increase in grain size of primary α phase from 8.2 to 16.4 μm. The shape of voids changes from the tiny round to the irregular strip. The highest shear strength of bond can be obtained in the Ti-6Al-4V alloy with a grain size of 8.2 μm. This is contributed to the higher ability of plastic flow and more short-paths for diffusion in the alloy with smaller grain size of primary α phase, which promote the void closure process and the formation of α/β grains across bonding interface. 展开更多
关键词 grain size bonding interface void closure shear strength press bonding Ti-6Al-4V alloy
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接入网中V5.2接口ASIC芯片设计
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作者 孟李林 徐敏 《半导体技术》 CAS CSCD 北大核心 2001年第7期31-34,共4页
V5接口提供了接入网与本地交换机间的新型开放式数字接口。重点讨论了符合V5.2接口协议的ASIC芯片的实现方案。根据该方案使用硬件描述语言(Verilog HDL)和采用自顶向下(TOP-DOWN)的设计方法实现了具... V5接口提供了接入网与本地交换机间的新型开放式数字接口。重点讨论了符合V5.2接口协议的ASIC芯片的实现方案。根据该方案使用硬件描述语言(Verilog HDL)和采用自顶向下(TOP-DOWN)的设计方法实现了具体电路,并使用FPGA芯片对该电路进行了物理验证。实验表明根据本方案设计的电路正确,工作稳定可靠。 展开更多
关键词 v5.2接口 接入网 ASIC FPGA 通信网 集成电路设计
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具有V5.2接口的基站控制器的设计与实现
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作者 杨勤 《解放军理工大学学报(自然科学版)》 EI 2001年第2期34-36,共3页
无线固定接入系统以其投资少、安装速度快、扩容方便、抗灾性强等诸多优点越来越受到人们重视。其中 ,基站控制器 (BSC)是系统重要的组成设备之一 ,用于对多基站 (BS)进行组网控制。详细介绍了一种通过 V5 .2接口与本地交换机 (LE)相连... 无线固定接入系统以其投资少、安装速度快、扩容方便、抗灾性强等诸多优点越来越受到人们重视。其中 ,基站控制器 (BSC)是系统重要的组成设备之一 ,用于对多基站 (BS)进行组网控制。详细介绍了一种通过 V5 .2接口与本地交换机 (LE)相连的基站控制器的总体设计结构 ,从系统的硬件功能结构、软件功能结构和维护台软件功能结构等方面进行了详细的论述。 展开更多
关键词 接入网 固定无线接入 v5.2接口 基站控制器 BSC 无级接入网
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彩用面向对象技术的V5.2接口光纤接入网系统软件设计
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作者 吴大鹏 《电信交换》 1997年第2期16-21,40,共7页
本文探讨了采用面向对象技术设计V5.2接口光纤接入网系统软件的方法,以此来克服传统结构化程序设计中存在的问题。
关键词 面向对象 v5.2接口 光纤接入网 任务调度
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β-Ga_(2)O_(3)MOS界面缺陷表征方法研究进展
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作者 张雲龙 马培培 《微纳电子技术》 2026年第3期46-57,共12页
β-Ga_(2)O_(3)MOSFET凭借其高击穿电场强度、低导通电阻和较低的材料成本等优势,在高压及大功率应用领域展现出重要的应用前景。然而,在强电场、高低温循环等苛刻工作条件下,界面缺陷会显著影响器件性能,引发阈值电压漂移和击穿电压退... β-Ga_(2)O_(3)MOSFET凭借其高击穿电场强度、低导通电阻和较低的材料成本等优势,在高压及大功率应用领域展现出重要的应用前景。然而,在强电场、高低温循环等苛刻工作条件下,界面缺陷会显著影响器件性能,引发阈值电压漂移和击穿电压退化等可靠性问题。鉴于陷阱效应是制约β-Ga_(2)O_(3)MOSFET可靠性的核心因素,系统综述了β-Ga_(2)O_(3)MOS结构中典型的界面缺陷表征方法,从测试原理、适用场景与技术特点等方面对各类方法进行了对比分析。其中,传统表征手段(如Terman法、高低频电容-电压(C-V)法、电导法)适用于提取界面态密度,但难以探测深能级缺陷;而新兴技术(如深能级瞬态光谱法(DLTS)、深紫外光辅助C-V法)不仅能够精准表征深能级缺陷,还能获取缺陷的能级位置、俘获截面等信息。在总结当前β-Ga_(2)O_(3)MOS界面缺陷研究进展的基础上,对界面质量优化的关键研究方向进行了展望,以期为提升β-Ga_(2)O_(3)MOSFET的长期可靠性提供理论参考。 展开更多
关键词 β-Ga_(2)O_(3) 可靠性 阈值电压漂移 电容-电压(C-V)迟滞 界面缺陷表征
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Influence of α/β interface phase on the tensile properties of laser cladding deposited Ti–6Al–4V titanium alloy 被引量:19
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作者 Zhuang Zhao Jing Chen +2 位作者 Shuai Guo Hua Tan Weidong Huang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2017年第7期675-681,共7页
Laser cladding deposited Ti-6Al-4V titanium alloy universally shows more complex microstructures,each of which has significant effect on mechanical properties. Of particular α/β interface phase has been observed in ... Laser cladding deposited Ti-6Al-4V titanium alloy universally shows more complex microstructures,each of which has significant effect on mechanical properties. Of particular α/β interface phase has been observed in this paper under certain conditions. It demonstrates that the influence of the α/β interface phase on the tensile properties is closely associated with dislocations and twin substructure through comparison experiments. The results show that the α/β interface phase hinders dislocation motion and decreases effective slip length. In addition, the twin substructure has been activated in the α/β interface phase during tensile process and has acted somehow like grain boundaries. Therefore, the strength and the work-hardening rate of the laser cladding deposited Ti-6Al-4V titanium alloy have been significantly improved due to the dynamic Hall-Petch effect. Besides, the α/β interface phase leads to more uniform dislocations distribution, which implies that relative lower local concentrated stress will be produced along the α/β interface phase or colony boundary after the same amount of plastic deformation. Moreover,the twinning-induced plasticity effects in the α/β interface phase further increase the plastic deformation capacity. These results in higher elongation for the laser cladding deposited Ti-6Al-4V titanium alloy.It can be concluded that the current work suggests an effective method to simultaneously improve the strength and plasticity of laser cladding deposited Ti-6Al-4V titanium alloy based on the α/β interface phase. 展开更多
关键词 TI-6AL-4V Laser cladding deposition α/βinterface phase DISLOCATION TWINS Tensile properties
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Insights into in-situ TiB/dual-phase Ti alloy interface and its high load-bearing capacity 被引量:4
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作者 Qi An Lujun Huang +5 位作者 Qi Qian Yong Jiang Shuai Wang Rui Zhang Lin Geng Liqin Wang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第24期156-166,共11页
To better understand the strengthening mechanism of in-situ formed TiB reinforcements in dual-phase Ti6 Al4 V alloy,the interface characters and properties ofα-Ti/β-Ti/TiB system were thoroughly investigated with th... To better understand the strengthening mechanism of in-situ formed TiB reinforcements in dual-phase Ti6 Al4 V alloy,the interface characters and properties ofα-Ti/β-Ti/TiB system were thoroughly investigated with the combined use of high-resolution transmission electron microscopy(HRTEM),abinitio calculations,and indentation tests.The ab-initio calculations suggest that the highly coherent(100)_(TiB)/(121)_(β-Ti)phase boundary(PB)has fairly low interface energy of 0.082 J/m^(2)with an exceptionally high adhesion strength of 6.04 J/m^(2),owing to the formation of strong interfacial Ti–B ionic bonds.The semi-coherent(201)_(TiB)/(0001)_(α-Ti)interface shows a relatively higher interface energy of 1.442 J/m^(2)but still with a fairly high adhesion strength of 4.95 J/m^(2).With the obtained interfacial energetics,thermodynamics analyses were further carried out to explore the nucleation mechanism ofα-Ti in TiB reinforced Ti6Al4V composite.Superior to the heterogeneous nucleation at TiB/β-Ti interface,the homogeneous nucleation ofα-Ti within theβ-Ti phase can be more energy-preferred,due to its lower nucleation energy barrier and critical radius.Further indentation tests under various loads of different modes confirmed a remarkably enhanced load-bearing capacity of dual-phase Ti6Al4V alloys,under the critical significance of the strong interfacial bonding achieved by reinforcements of in-situ formed TiB. 展开更多
关键词 Dual-phase Ti6Al4V alloy In-situ TiB interface Ab-initio calculation Indentation test
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The Richtmyer–Meshkov instability of a 'V' shaped air/helium interface subjected to a weak shock 被引量:3
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作者 Zhigang Zhai Xisheng Luo Ping Dong 《Theoretical & Applied Mechanics Letters》 CAS CSCD 2016年第5期226-229,共4页
The Richtmyer-Meshkov instability ofa ‘V' shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V' shaped interface with accura... The Richtmyer-Meshkov instability ofa ‘V' shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V' shaped interface with accurate initial conditions. Five kinds of ‘V' shaped interfaces with different vertex angles are formed to highlight the effects of initial conditions on the flow characteristics. The results show that a spike is generated after the shock impact, and grows constantly with time. As the vertex angle increases, vortices generated on the interface become less noticeable, and the spike develops less pronouncedly. The linear growth rate of interface width after compression phase is estimated by a linear model and a revised linear model, and the latter is proven to be more effective for the interface with high initial amplitudes. The linear growth rate of interface width is, for the first time in a heavy/light interface configuration, found to be a non-monotonous function of the initial perturbation amplitude-wavelength ratio. 展开更多
关键词 Richtmyer-Meshkov instability V shaped interface High-speed schlieren photography
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光纤综合业务传输网中V5.2接口的设计与实现
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作者 陈张泵 韩涛 《计算机与数字工程》 2006年第4期117-120,共4页
首先分析了现有光纤综合业务传输平台中模拟电话和ISDN业务接入方式的不足,然后根据该网络的特点和需求,提出了在汇集网元中设置V5模块的解决方案,接着讨论了V5.2接口技术并详细介绍了一种实际设计方案,最后对该方案的可行性进行总结。
关键词 光纤综合业务传输网 接入网 v5.2接口 Nucleus嵌入式操作系统
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NGN网络测试仪中V5UA及V5.2协议解码的实现
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作者 邓洁 雒江涛 叶健涛 《通信技术》 2008年第6期46-48,共3页
简要介绍了V5UA和V5.2的基本概念、功能,以及它们在NGN中的组网应用方式,并在深入分析V5UA和V5.2消息结构的基础上,实现NGN网络测试仪的V5UA协议的解码、上层协议数据提取、以及V5.2的解码方法。
关键词 下一代网络 信令网关 v5.2用户适配层协议 v5.2协议
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新型的带V5.2接口的综合接入系统AN-2000
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作者 祝斐 《通讯世界》 1998年第2期77-79,共3页
新型的带V5.2接口的综合接入系统AN-2000UT斯达康公司祝斐一、接入网及V5接口发展历史连接本地交换局(LE)和用户终端设备(TE)的用户线(或称用户环路)无论从实现业务接入或是占通信投资比重方面都占重要地位。... 新型的带V5.2接口的综合接入系统AN-2000UT斯达康公司祝斐一、接入网及V5接口发展历史连接本地交换局(LE)和用户终端设备(TE)的用户线(或称用户环路)无论从实现业务接入或是占通信投资比重方面都占重要地位。长期以来,世界各国的通信网关系到国... 展开更多
关键词 v5.2接口 AN-2000 接入网 通信网
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勒索病毒GANDCRAB V5.2的防御与查杀策略 被引量:1
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作者 李荣玮 黄慧扬 罗欢 《数字传媒研究》 2021年第4期37-40,共4页
GANDCRAB V5.2是一种主要对政企以及机构网络进行攻击传播的勒索病毒,主机受到感染后,其数据和文件将被加密,影响相关业务的正常运行,给用户带来巨大损失。本文详细介绍了近年来最活跃的勒索病毒GANDCRAB V5.2,概述了勒索病毒的特点、... GANDCRAB V5.2是一种主要对政企以及机构网络进行攻击传播的勒索病毒,主机受到感染后,其数据和文件将被加密,影响相关业务的正常运行,给用户带来巨大损失。本文详细介绍了近年来最活跃的勒索病毒GANDCRAB V5.2,概述了勒索病毒的特点、传播方式和强大破坏力,探讨了在广电内部业务网络的技术架构下,针对该病毒的应对防御措施,中毒主机的确认,以及病毒查杀的策略,最终起到保障数据信息安全,维护节目制播系统的日常运行的目的。 展开更多
关键词 勒索病毒GANDCRAB v5.2 防御措施 病毒查杀
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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors
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作者 Si-Qin-Gao-Wa Bao Xiao-Hua Ma +5 位作者 Wei-Wei Chen Ling Yang Bin Hou Qing Zhu Jie-Jie Zhu Yue Hao 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第6期378-383,共6页
In this paper,the interface states of the AlGaN/GaN metal–insulator–semiconductor(MIS)high electron mobility transistors(HEMTs)with an Al2 O3 gate dielectric are systematically evaluated.By frequency-dependent capac... In this paper,the interface states of the AlGaN/GaN metal–insulator–semiconductor(MIS)high electron mobility transistors(HEMTs)with an Al2 O3 gate dielectric are systematically evaluated.By frequency-dependent capacitance and conductance measurements,trap density and time constant at Al2 O3/AlGaN and AlGaN/GaN interface are determined.The experimental results reveal that the density of trap states and the activation energy at the Al2 O3/AlGaN interface are much higher than at the AlGaN/GaN interface.The photo-assisted capacitance-voltage measurements are performed to characterize the deep-level traps located near mid-gap at the Al2 O3/AlGaN interface,which indicates that a density of deep-level traps is lower than the density of the shallow-level states. 展开更多
关键词 AlGaN/GaN HEMTS interface TRAPS frequency-dependent C–V MEASUREMENTS photo-assisted C–V MEASUREMENTS
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e-Pesticide Manual v5.2出版
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作者 杨新玲 《农药学学报》 CAS CSCD 北大核心 2012年第1期110-110,共1页
《e-农药手册》5.2版本(2011-2012)于2011年11月由英国作物保护协会出版,在包含2009年出版的第15版《农药手册》所有数据的基础上,最新版增加了如下信息:新的活性成分;将近10 000种产品名称信息(其中包括逾3 000种停用农药名称);40... 《e-农药手册》5.2版本(2011-2012)于2011年11月由英国作物保护协会出版,在包含2009年出版的第15版《农药手册》所有数据的基础上,最新版增加了如下信息:新的活性成分;将近10 000种产品名称信息(其中包括逾3 000种停用农药名称);400多个化学物质词条(截止到2010年7月公布的ISO建议用名);比纸质版有更多的更新词条;增加了200个化学物质的结构;Smiles编码;更多数据的更新。 展开更多
关键词 出版 v5.2 农药名称 化学物质 作物保护 活性成分 产品名称 ISO
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Effect of V content on microstructures and properties of TiC cermet fusion welding interface
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作者 魏炜 徐莹 +2 位作者 王旭 黄智泉 刘胜新 《China Welding》 CAS 2024年第1期40-45,共6页
The effects of vanadium(V)on the microstructures and mechanical properties of the TiC cermet fusion welding interface were studied by adjusting the content of V in the self-developed flux-cored wires using metal inert... The effects of vanadium(V)on the microstructures and mechanical properties of the TiC cermet fusion welding interface were studied by adjusting the content of V in the self-developed flux-cored wires using metal inert gas arc(MIG)welding for surfacing on the TiC cermet.The results show that the increase in V content promotes the element diffusion between TiC cermet and weld metal.There are no de-fects observed in the interface,and the diffusion of elements refers to excellent metallurgical bonding.The shear strength of the fusion zone initially decreases and then increases with the increase in V content.The maximum shear strength of the TiC cermet/weld interface,reaching 552 MPa,occurred when the V content reached 0.65%.Meanwhile,the average hardness in the transition zone reached 488.2 HV0.2. 展开更多
关键词 TiC cermet MIG welding interface V content shear strength
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Methods for Reducing Interface Aperture Inconsistency During NC Orbital Milling of Aircraft Laminates with Coarse Pitch
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作者 SHAN Yicai HE Ning +1 位作者 LI Liang WU Kai 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2020年第3期446-459,共14页
The methods for reducing interface aperture inconsistency are studied in NC orbital milling(NCOM)of CFRP/Ti6Al4V laminates with coarse pitch.Comparative experiments show burr,aperture inconsistency and error are typic... The methods for reducing interface aperture inconsistency are studied in NC orbital milling(NCOM)of CFRP/Ti6Al4V laminates with coarse pitch.Comparative experiments show burr,aperture inconsistency and error are typical interface defects.Meanwhile,aperture inconsistency and error are more serious than burr in NCOM with coarse pitch.As one of the major causes of interface defects,axial force and radial force are intensively studied.Based upon the machining principle of orbital milling(OM)and the actual hole-making condition in laminated structures,NCOM experiments with coarse pitch are conducted on CFRP/Ti6Al4V laminates under different cutting conditions.Then,the effects of interlayer clamping,minimal quantity lubrication(MQL),twice milling instead of reaming,and interlayer speed change on interface aperture are analyzed.Research shows that interlayer clamping,interlayer speed change and MQL can effectively reduce out-of-tolerance of interface aperture.When making holes of different diameters with one cutter,axial feed has a greater effect on interface aperture precision than tangential feed.When making holes of the same diameter with different cutters,small diameter cutter will reduce interface aperture precision in a single processing.But the method of“twice milling instead of reaming”can improve the aperture precision effectively. 展开更多
关键词 CFRP/Ti6Al4V laminates NC orbital milling coarse pitch feed interface aperture
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H_∞ Robust Control of DC-AC Interfaced Microsource in Microgrids
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作者 Chun-Xia Dou Fang Zhao +1 位作者 Xing-Bei Jia Dong-Le Liu 《International Journal of Automation and computing》 EI CSCD 2013年第1期73-78,共6页
This paper focuses on the direct current-alternating current (DC-AC) interfaced microsource based H∞ robust control strategies in microgrids. It presents detail of a DC-AC interfaced microsource model which is conn... This paper focuses on the direct current-alternating current (DC-AC) interfaced microsource based H∞ robust control strategies in microgrids. It presents detail of a DC-AC interfaced microsource model which is connected to the power grid through a controllable switch. A double loop current-regulated voltage control scheme for the DC-AC interface is designed. In the case of the load disturbance and the model uncertainties, the inner voltage and current loop are produced based on the H∞ robust control strategies. The outer power loop uses the droop characteristic controller. Finally, the scheme is simulated using the Matlab/Simulink. The simulation results demonstrate that DC-AC interfaced microsource system can supply high quality power. Also, the proposed control scheme can make the system switch smoothly between the isolated mode and grid-connected mode. 更多 展开更多
关键词 MICROGRID DC-AC interfaced microsource H∞ robust control f-v droop characteristic smooth switching
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如何实现DB2数据库系统从V5.2向V7.2升级
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作者 王培烨 《电脑编程技巧与维护》 2002年第10期83-88,共6页
最新推出的DB2数据库管理系统V7.2使用户实现了对Web应用、关键数据资源以及传统应用等数据资源的集成,并对电子商务集成、信息集成、可扩展性、多平台支持、安全可靠性以及易用性等六方面做了改进。IBM DB2 V7.2是目前业界内唯一能够支... 最新推出的DB2数据库管理系统V7.2使用户实现了对Web应用、关键数据资源以及传统应用等数据资源的集成,并对电子商务集成、信息集成、可扩展性、多平台支持、安全可靠性以及易用性等六方面做了改进。IBM DB2 V7.2是目前业界内唯一能够支持SOAP和UDDI等新的Web服务标准的数据库产品,也是仅有的一款能够对扩展的数据源提供高性能访问的数据库产品,并且V7.2增强了与WebSphere应用服务器和MQSeries的集成。 展开更多
关键词 DB2数据库系统 v5.2 V7.2
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CATT TSANET中以V5.2为接口协议的接入单元
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作者 范亚伟 《电信交换》 1998年第2期1-8,共8页
CATT TSANET网是邮电部电信科学研究院研制的全业务接入网,其中以V5.2为接口协议的接入单元是其PSTN接入和窄带ISDN接入的重要组成部分,本文阐述了V5.2接口协议的开发及其设备所支持的业务范围。
关键词 接入网 本地交换机 v5.2接口 协议 ISDN
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AN-2000:一种新型的带V5.2接口的综合接入系统
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作者 祝斐 《电子展望与决策》 1998年第1期44-47,共4页
AN-2000:一种新型的带V5.2接口的综合接入系统●祝斐一、接入网及V5接口发展历史连接本地交换局(LE)和用户终端设备(TE)的用户线(或称用户环路),无论从实现业务接入或是占通信投资比重方面都占重要地位。长期... AN-2000:一种新型的带V5.2接口的综合接入系统●祝斐一、接入网及V5接口发展历史连接本地交换局(LE)和用户终端设备(TE)的用户线(或称用户环路),无论从实现业务接入或是占通信投资比重方面都占重要地位。长期以来,世界各国的通信网关系到国家命... 展开更多
关键词 v5.2接口 接入网 AN-2000 电信网 数字网
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