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Effect of grain size of primary α phase on bonding interface characteristic and mechanical property of press bonded Ti-6Al-4V alloy 被引量:3
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作者 李宏 李淼泉 +1 位作者 刘宏彬 张超 《Transactions of Nonferrous Metals Society of China》 SCIE EI CAS CSCD 2016年第1期93-99,共7页
The effect of grain size of primary α phase on the bonding interface characteristic and shear strength of bond was investigated in the press bonding of Ti-6Al-4V alloy. The quantitative results show that the average ... The effect of grain size of primary α phase on the bonding interface characteristic and shear strength of bond was investigated in the press bonding of Ti-6Al-4V alloy. The quantitative results show that the average size of voids increases from 0.8 to 2.6 μm and the bonding ratio decreases from 90.9% to 77.8% with an increase in grain size of primary α phase from 8.2 to 16.4 μm. The shape of voids changes from the tiny round to the irregular strip. The highest shear strength of bond can be obtained in the Ti-6Al-4V alloy with a grain size of 8.2 μm. This is contributed to the higher ability of plastic flow and more short-paths for diffusion in the alloy with smaller grain size of primary α phase, which promote the void closure process and the formation of α/β grains across bonding interface. 展开更多
关键词 grain size bonding interface void closure shear strength press bonding Ti-6Al-4V alloy
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长波p-on-n碲镉汞表界面电学特性及载流子输运行为研究
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作者 王娇 戴永喜 +6 位作者 李浩冉 刘世光 王鑫 刘兴新 任秀娟 刘铭 陈彦冠 《红外与激光工程》 北大核心 2026年第3期197-207,共11页
文中对长波HgCdTe与钝化层界面电学特性及HgCdTe材料载流子输运行为进行了系统研究。首先利用AFM、椭偏仪和SEM表征手段对不同生长条件下钝化层的表面形貌、光学性能和微观结构进行深入分析,获得致密性高和均匀性好的高质量钝化层。通... 文中对长波HgCdTe与钝化层界面电学特性及HgCdTe材料载流子输运行为进行了系统研究。首先利用AFM、椭偏仪和SEM表征手段对不同生长条件下钝化层的表面形貌、光学性能和微观结构进行深入分析,获得致密性高和均匀性好的高质量钝化层。通过结合C-V、I-V表征手段,对n型HgCdTe与钝化层的界面电学性质和光电二极管性能进行表征分析。结果表明,钝化条件优化后制备的MIS器件具有更低的界面固定电荷密度9.4×10^(10) cm^(-2)和慢界面态密度3×10^(10) cm^(-2),同时此条件制备的二极管器件能有效抑制器件表面漏电现象。然后设计了一种新型的Hall bar结构器件,测试不同退火条件下碲镉汞多载流子迁移率谱。通过对退火条件进行优化,器件的电子迁移率由10~4 cm^(2)/V·s提高到10~5 cm^(2)/V·s量级,能有效抑制载流子复合过程,提高长波探测器性能。最终对于p-on-n双层异质结长波红外探测器,通过工艺优化,在77 K测试条件下,器件暗电流可达到1.8 pA,暗电流密度可达到2.9×10^(-7) A/cm^(2)水平,与Rule22理论值基本一致。 展开更多
关键词 HGCDTE 表界面电学性质 C-V 载流子迁移率谱 暗电流密度
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硅基太阳能电池I-V曲线S形异常的多尺度解析与教学策略优化
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作者 谢子昂 AHMED Tanvir +7 位作者 陈森 张师平 闫松涛 王玉荣 裴艺丽 李莉 YEN Sros 吴平 《物理与工程》 2026年第1期225-236,共12页
本文聚焦于硅基太阳能电池I-V曲线测量中常见的S形异常现象,选取晶体硅(c-Si)、多晶硅(mc-Si)与非晶硅(a-Si:H)三种典型材料体系为研究对象,系统分析其在不同结构与界面条件下出现I-V曲线S形异常的微观物理机制。通过引入界面能带工程... 本文聚焦于硅基太阳能电池I-V曲线测量中常见的S形异常现象,选取晶体硅(c-Si)、多晶硅(mc-Si)与非晶硅(a-Si:H)三种典型材料体系为研究对象,系统分析其在不同结构与界面条件下出现I-V曲线S形异常的微观物理机制。通过引入界面能带工程、界面态诱导势垒、电荷积聚与载流子复合行为等理论模型,揭示了界面能带未对齐、Fermi能级钉扎及高密度缺陷态所导致的电荷输运障碍是该异常的本质成因。我们进一步结合温度依赖性分析,明确了低温条件下热发射能力减弱对S形异常增强的关键影响。教学实践方面,本文提出将S形异常引入大学物理实验课程,构建融合实验测量、理论建模与数值仿真的探究式教学模式,培养学生从现象出发反溯基础物理知识,深入研究其微观物理机制,并利用仿真工具进行性能优化的科研能力。通过多种材料体系和实验条件的比较分析,学生能够形成从器件结构出发,集合材料特性、界面物理方面的知识研究宏观输出响应。该项教学措施不仅深化了对光伏器件非理想特性的物理认知,也为大学物理实验教学改革提供了可操作性强的理论框架与实践范式。 展开更多
关键词 太阳能电池 I-V曲线S形异常 界面势垒 缺陷态 实验教学改革
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接入网中V5.2接口ASIC芯片设计
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作者 孟李林 徐敏 《半导体技术》 CAS CSCD 北大核心 2001年第7期31-34,共4页
V5接口提供了接入网与本地交换机间的新型开放式数字接口。重点讨论了符合V5.2接口协议的ASIC芯片的实现方案。根据该方案使用硬件描述语言(Verilog HDL)和采用自顶向下(TOP-DOWN)的设计方法实现了具... V5接口提供了接入网与本地交换机间的新型开放式数字接口。重点讨论了符合V5.2接口协议的ASIC芯片的实现方案。根据该方案使用硬件描述语言(Verilog HDL)和采用自顶向下(TOP-DOWN)的设计方法实现了具体电路,并使用FPGA芯片对该电路进行了物理验证。实验表明根据本方案设计的电路正确,工作稳定可靠。 展开更多
关键词 v5.2接口 接入网 ASIC FPGA 通信网 集成电路设计
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具有V5.2接口的基站控制器的设计与实现
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作者 杨勤 《解放军理工大学学报(自然科学版)》 EI 2001年第2期34-36,共3页
无线固定接入系统以其投资少、安装速度快、扩容方便、抗灾性强等诸多优点越来越受到人们重视。其中 ,基站控制器 (BSC)是系统重要的组成设备之一 ,用于对多基站 (BS)进行组网控制。详细介绍了一种通过 V5 .2接口与本地交换机 (LE)相连... 无线固定接入系统以其投资少、安装速度快、扩容方便、抗灾性强等诸多优点越来越受到人们重视。其中 ,基站控制器 (BSC)是系统重要的组成设备之一 ,用于对多基站 (BS)进行组网控制。详细介绍了一种通过 V5 .2接口与本地交换机 (LE)相连的基站控制器的总体设计结构 ,从系统的硬件功能结构、软件功能结构和维护台软件功能结构等方面进行了详细的论述。 展开更多
关键词 接入网 固定无线接入 v5.2接口 基站控制器 BSC 无级接入网
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彩用面向对象技术的V5.2接口光纤接入网系统软件设计
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作者 吴大鹏 《电信交换》 1997年第2期16-21,40,共7页
本文探讨了采用面向对象技术设计V5.2接口光纤接入网系统软件的方法,以此来克服传统结构化程序设计中存在的问题。
关键词 面向对象 v5.2接口 光纤接入网 任务调度
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微动H/V谱比法在岩土工程勘察中的应用
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作者 黄佳坤 《工程地球物理学报》 2026年第2期54-64,共11页
本文系统阐述了微动H/V(Horizontal to Vertical)谱比法的计算原理及其在岩土工程勘察中的应用。微动H/V谱比的本质为震动在不同岩土层结构中传播时垂直方向与水平方向的能量分配占比,通过5组实测微动信号的H/V谱比的结果分析,验证了H/... 本文系统阐述了微动H/V(Horizontal to Vertical)谱比法的计算原理及其在岩土工程勘察中的应用。微动H/V谱比的本质为震动在不同岩土层结构中传播时垂直方向与水平方向的能量分配占比,通过5组实测微动信号的H/V谱比的结果分析,验证了H/V谱比法在岩土层探测领域的稳定性,即微动H/V谱比能够直接反映地下岩土层的结构变化。研究通过近似地质条件下的实例验证,建立了基岩埋深与H/V谱比最大峰值频率的拟合关系,拟合优度R^(2)均高于0.9,显著提升了土石分界面探测精度。结合H/V谱比剖面和速度剖面的联合解译,进一步提高了土石分界面探测结果的准确性。此外,在古城墙遗址探测中的应用案例表明,该方法对地下人工构筑物具有高灵敏度性,可有效识别地下构筑物及其背景地层。实践证实微动H/V谱比法具备现场操作简便、探测精度高、分辨率强等优势,为岩土工程勘察提供了高效、准确且对环境无干扰的技术手段,具有重要的推广价值。 展开更多
关键词 微动 H/V谱比法 岩土工程勘察 土石分界面 古城墙
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β-Ga_(2)O_(3)MOS界面缺陷表征方法研究进展
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作者 张雲龙 马培培 《微纳电子技术》 2026年第3期46-57,共12页
β-Ga_(2)O_(3)MOSFET凭借其高击穿电场强度、低导通电阻和较低的材料成本等优势,在高压及大功率应用领域展现出重要的应用前景。然而,在强电场、高低温循环等苛刻工作条件下,界面缺陷会显著影响器件性能,引发阈值电压漂移和击穿电压退... β-Ga_(2)O_(3)MOSFET凭借其高击穿电场强度、低导通电阻和较低的材料成本等优势,在高压及大功率应用领域展现出重要的应用前景。然而,在强电场、高低温循环等苛刻工作条件下,界面缺陷会显著影响器件性能,引发阈值电压漂移和击穿电压退化等可靠性问题。鉴于陷阱效应是制约β-Ga_(2)O_(3)MOSFET可靠性的核心因素,系统综述了β-Ga_(2)O_(3)MOS结构中典型的界面缺陷表征方法,从测试原理、适用场景与技术特点等方面对各类方法进行了对比分析。其中,传统表征手段(如Terman法、高低频电容-电压(C-V)法、电导法)适用于提取界面态密度,但难以探测深能级缺陷;而新兴技术(如深能级瞬态光谱法(DLTS)、深紫外光辅助C-V法)不仅能够精准表征深能级缺陷,还能获取缺陷的能级位置、俘获截面等信息。在总结当前β-Ga_(2)O_(3)MOS界面缺陷研究进展的基础上,对界面质量优化的关键研究方向进行了展望,以期为提升β-Ga_(2)O_(3)MOSFET的长期可靠性提供理论参考。 展开更多
关键词 β-Ga_(2)O_(3) 可靠性 阈值电压漂移 电容-电压(C-V)迟滞 界面缺陷表征
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Influence of α/β interface phase on the tensile properties of laser cladding deposited Ti–6Al–4V titanium alloy 被引量:19
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作者 Zhuang Zhao Jing Chen +2 位作者 Shuai Guo Hua Tan Weidong Huang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2017年第7期675-681,共7页
Laser cladding deposited Ti-6Al-4V titanium alloy universally shows more complex microstructures,each of which has significant effect on mechanical properties. Of particular α/β interface phase has been observed in ... Laser cladding deposited Ti-6Al-4V titanium alloy universally shows more complex microstructures,each of which has significant effect on mechanical properties. Of particular α/β interface phase has been observed in this paper under certain conditions. It demonstrates that the influence of the α/β interface phase on the tensile properties is closely associated with dislocations and twin substructure through comparison experiments. The results show that the α/β interface phase hinders dislocation motion and decreases effective slip length. In addition, the twin substructure has been activated in the α/β interface phase during tensile process and has acted somehow like grain boundaries. Therefore, the strength and the work-hardening rate of the laser cladding deposited Ti-6Al-4V titanium alloy have been significantly improved due to the dynamic Hall-Petch effect. Besides, the α/β interface phase leads to more uniform dislocations distribution, which implies that relative lower local concentrated stress will be produced along the α/β interface phase or colony boundary after the same amount of plastic deformation. Moreover,the twinning-induced plasticity effects in the α/β interface phase further increase the plastic deformation capacity. These results in higher elongation for the laser cladding deposited Ti-6Al-4V titanium alloy.It can be concluded that the current work suggests an effective method to simultaneously improve the strength and plasticity of laser cladding deposited Ti-6Al-4V titanium alloy based on the α/β interface phase. 展开更多
关键词 TI-6AL-4V Laser cladding deposition α/βinterface phase DISLOCATION TWINS Tensile properties
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Insights into in-situ TiB/dual-phase Ti alloy interface and its high load-bearing capacity 被引量:4
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作者 Qi An Lujun Huang +5 位作者 Qi Qian Yong Jiang Shuai Wang Rui Zhang Lin Geng Liqin Wang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第24期156-166,共11页
To better understand the strengthening mechanism of in-situ formed TiB reinforcements in dual-phase Ti6 Al4 V alloy,the interface characters and properties ofα-Ti/β-Ti/TiB system were thoroughly investigated with th... To better understand the strengthening mechanism of in-situ formed TiB reinforcements in dual-phase Ti6 Al4 V alloy,the interface characters and properties ofα-Ti/β-Ti/TiB system were thoroughly investigated with the combined use of high-resolution transmission electron microscopy(HRTEM),abinitio calculations,and indentation tests.The ab-initio calculations suggest that the highly coherent(100)_(TiB)/(121)_(β-Ti)phase boundary(PB)has fairly low interface energy of 0.082 J/m^(2)with an exceptionally high adhesion strength of 6.04 J/m^(2),owing to the formation of strong interfacial Ti–B ionic bonds.The semi-coherent(201)_(TiB)/(0001)_(α-Ti)interface shows a relatively higher interface energy of 1.442 J/m^(2)but still with a fairly high adhesion strength of 4.95 J/m^(2).With the obtained interfacial energetics,thermodynamics analyses were further carried out to explore the nucleation mechanism ofα-Ti in TiB reinforced Ti6Al4V composite.Superior to the heterogeneous nucleation at TiB/β-Ti interface,the homogeneous nucleation ofα-Ti within theβ-Ti phase can be more energy-preferred,due to its lower nucleation energy barrier and critical radius.Further indentation tests under various loads of different modes confirmed a remarkably enhanced load-bearing capacity of dual-phase Ti6Al4V alloys,under the critical significance of the strong interfacial bonding achieved by reinforcements of in-situ formed TiB. 展开更多
关键词 Dual-phase Ti6Al4V alloy In-situ TiB interface Ab-initio calculation Indentation test
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The Richtmyer–Meshkov instability of a 'V' shaped air/helium interface subjected to a weak shock 被引量:3
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作者 Zhigang Zhai Xisheng Luo Ping Dong 《Theoretical & Applied Mechanics Letters》 CAS CSCD 2016年第5期226-229,共4页
The Richtmyer-Meshkov instability ofa ‘V' shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V' shaped interface with accura... The Richtmyer-Meshkov instability ofa ‘V' shaped air/helium gaseous interface subjected to a weak shock wave is experimentally studied. A soap film technique is adopted to create a ‘V' shaped interface with accurate initial conditions. Five kinds of ‘V' shaped interfaces with different vertex angles are formed to highlight the effects of initial conditions on the flow characteristics. The results show that a spike is generated after the shock impact, and grows constantly with time. As the vertex angle increases, vortices generated on the interface become less noticeable, and the spike develops less pronouncedly. The linear growth rate of interface width after compression phase is estimated by a linear model and a revised linear model, and the latter is proven to be more effective for the interface with high initial amplitudes. The linear growth rate of interface width is, for the first time in a heavy/light interface configuration, found to be a non-monotonous function of the initial perturbation amplitude-wavelength ratio. 展开更多
关键词 Richtmyer-Meshkov instability V shaped interface High-speed schlieren photography
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光纤综合业务传输网中V5.2接口的设计与实现
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作者 陈张泵 韩涛 《计算机与数字工程》 2006年第4期117-120,共4页
首先分析了现有光纤综合业务传输平台中模拟电话和ISDN业务接入方式的不足,然后根据该网络的特点和需求,提出了在汇集网元中设置V5模块的解决方案,接着讨论了V5.2接口技术并详细介绍了一种实际设计方案,最后对该方案的可行性进行总结。
关键词 光纤综合业务传输网 接入网 v5.2接口 Nucleus嵌入式操作系统
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NGN网络测试仪中V5UA及V5.2协议解码的实现
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作者 邓洁 雒江涛 叶健涛 《通信技术》 2008年第6期46-48,共3页
简要介绍了V5UA和V5.2的基本概念、功能,以及它们在NGN中的组网应用方式,并在深入分析V5UA和V5.2消息结构的基础上,实现NGN网络测试仪的V5UA协议的解码、上层协议数据提取、以及V5.2的解码方法。
关键词 下一代网络 信令网关 v5.2用户适配层协议 v5.2协议
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新型的带V5.2接口的综合接入系统AN-2000
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作者 祝斐 《通讯世界》 1998年第2期77-79,共3页
新型的带V5.2接口的综合接入系统AN-2000UT斯达康公司祝斐一、接入网及V5接口发展历史连接本地交换局(LE)和用户终端设备(TE)的用户线(或称用户环路)无论从实现业务接入或是占通信投资比重方面都占重要地位。... 新型的带V5.2接口的综合接入系统AN-2000UT斯达康公司祝斐一、接入网及V5接口发展历史连接本地交换局(LE)和用户终端设备(TE)的用户线(或称用户环路)无论从实现业务接入或是占通信投资比重方面都占重要地位。长期以来,世界各国的通信网关系到国... 展开更多
关键词 v5.2接口 AN-2000 接入网 通信网
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勒索病毒GANDCRAB V5.2的防御与查杀策略 被引量:1
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作者 李荣玮 黄慧扬 罗欢 《数字传媒研究》 2021年第4期37-40,共4页
GANDCRAB V5.2是一种主要对政企以及机构网络进行攻击传播的勒索病毒,主机受到感染后,其数据和文件将被加密,影响相关业务的正常运行,给用户带来巨大损失。本文详细介绍了近年来最活跃的勒索病毒GANDCRAB V5.2,概述了勒索病毒的特点、... GANDCRAB V5.2是一种主要对政企以及机构网络进行攻击传播的勒索病毒,主机受到感染后,其数据和文件将被加密,影响相关业务的正常运行,给用户带来巨大损失。本文详细介绍了近年来最活跃的勒索病毒GANDCRAB V5.2,概述了勒索病毒的特点、传播方式和强大破坏力,探讨了在广电内部业务网络的技术架构下,针对该病毒的应对防御措施,中毒主机的确认,以及病毒查杀的策略,最终起到保障数据信息安全,维护节目制播系统的日常运行的目的。 展开更多
关键词 勒索病毒GANDCRAB v5.2 防御措施 病毒查杀
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Method of evaluating interface traps in Al2O3/AlGaN/GaN high electron mobility transistors
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作者 Si-Qin-Gao-Wa Bao Xiao-Hua Ma +5 位作者 Wei-Wei Chen Ling Yang Bin Hou Qing Zhu Jie-Jie Zhu Yue Hao 《Chinese Physics B》 SCIE EI CAS CSCD 2019年第6期378-383,共6页
In this paper,the interface states of the AlGaN/GaN metal–insulator–semiconductor(MIS)high electron mobility transistors(HEMTs)with an Al2 O3 gate dielectric are systematically evaluated.By frequency-dependent capac... In this paper,the interface states of the AlGaN/GaN metal–insulator–semiconductor(MIS)high electron mobility transistors(HEMTs)with an Al2 O3 gate dielectric are systematically evaluated.By frequency-dependent capacitance and conductance measurements,trap density and time constant at Al2 O3/AlGaN and AlGaN/GaN interface are determined.The experimental results reveal that the density of trap states and the activation energy at the Al2 O3/AlGaN interface are much higher than at the AlGaN/GaN interface.The photo-assisted capacitance-voltage measurements are performed to characterize the deep-level traps located near mid-gap at the Al2 O3/AlGaN interface,which indicates that a density of deep-level traps is lower than the density of the shallow-level states. 展开更多
关键词 AlGaN/GaN HEMTS interface TRAPS frequency-dependent C–V MEASUREMENTS photo-assisted C–V MEASUREMENTS
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e-Pesticide Manual v5.2出版
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作者 杨新玲 《农药学学报》 CAS CSCD 北大核心 2012年第1期110-110,共1页
《e-农药手册》5.2版本(2011-2012)于2011年11月由英国作物保护协会出版,在包含2009年出版的第15版《农药手册》所有数据的基础上,最新版增加了如下信息:新的活性成分;将近10 000种产品名称信息(其中包括逾3 000种停用农药名称);40... 《e-农药手册》5.2版本(2011-2012)于2011年11月由英国作物保护协会出版,在包含2009年出版的第15版《农药手册》所有数据的基础上,最新版增加了如下信息:新的活性成分;将近10 000种产品名称信息(其中包括逾3 000种停用农药名称);400多个化学物质词条(截止到2010年7月公布的ISO建议用名);比纸质版有更多的更新词条;增加了200个化学物质的结构;Smiles编码;更多数据的更新。 展开更多
关键词 出版 v5.2 农药名称 化学物质 作物保护 活性成分 产品名称 ISO
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Effect of V content on microstructures and properties of TiC cermet fusion welding interface
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作者 魏炜 徐莹 +2 位作者 王旭 黄智泉 刘胜新 《China Welding》 CAS 2024年第1期40-45,共6页
The effects of vanadium(V)on the microstructures and mechanical properties of the TiC cermet fusion welding interface were studied by adjusting the content of V in the self-developed flux-cored wires using metal inert... The effects of vanadium(V)on the microstructures and mechanical properties of the TiC cermet fusion welding interface were studied by adjusting the content of V in the self-developed flux-cored wires using metal inert gas arc(MIG)welding for surfacing on the TiC cermet.The results show that the increase in V content promotes the element diffusion between TiC cermet and weld metal.There are no de-fects observed in the interface,and the diffusion of elements refers to excellent metallurgical bonding.The shear strength of the fusion zone initially decreases and then increases with the increase in V content.The maximum shear strength of the TiC cermet/weld interface,reaching 552 MPa,occurred when the V content reached 0.65%.Meanwhile,the average hardness in the transition zone reached 488.2 HV0.2. 展开更多
关键词 TiC cermet MIG welding interface V content shear strength
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Methods for Reducing Interface Aperture Inconsistency During NC Orbital Milling of Aircraft Laminates with Coarse Pitch
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作者 SHAN Yicai HE Ning +1 位作者 LI Liang WU Kai 《Transactions of Nanjing University of Aeronautics and Astronautics》 EI CSCD 2020年第3期446-459,共14页
The methods for reducing interface aperture inconsistency are studied in NC orbital milling(NCOM)of CFRP/Ti6Al4V laminates with coarse pitch.Comparative experiments show burr,aperture inconsistency and error are typic... The methods for reducing interface aperture inconsistency are studied in NC orbital milling(NCOM)of CFRP/Ti6Al4V laminates with coarse pitch.Comparative experiments show burr,aperture inconsistency and error are typical interface defects.Meanwhile,aperture inconsistency and error are more serious than burr in NCOM with coarse pitch.As one of the major causes of interface defects,axial force and radial force are intensively studied.Based upon the machining principle of orbital milling(OM)and the actual hole-making condition in laminated structures,NCOM experiments with coarse pitch are conducted on CFRP/Ti6Al4V laminates under different cutting conditions.Then,the effects of interlayer clamping,minimal quantity lubrication(MQL),twice milling instead of reaming,and interlayer speed change on interface aperture are analyzed.Research shows that interlayer clamping,interlayer speed change and MQL can effectively reduce out-of-tolerance of interface aperture.When making holes of different diameters with one cutter,axial feed has a greater effect on interface aperture precision than tangential feed.When making holes of the same diameter with different cutters,small diameter cutter will reduce interface aperture precision in a single processing.But the method of“twice milling instead of reaming”can improve the aperture precision effectively. 展开更多
关键词 CFRP/Ti6Al4V laminates NC orbital milling coarse pitch feed interface aperture
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H_∞ Robust Control of DC-AC Interfaced Microsource in Microgrids
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作者 Chun-Xia Dou Fang Zhao +1 位作者 Xing-Bei Jia Dong-Le Liu 《International Journal of Automation and computing》 EI CSCD 2013年第1期73-78,共6页
This paper focuses on the direct current-alternating current (DC-AC) interfaced microsource based H∞ robust control strategies in microgrids. It presents detail of a DC-AC interfaced microsource model which is conn... This paper focuses on the direct current-alternating current (DC-AC) interfaced microsource based H∞ robust control strategies in microgrids. It presents detail of a DC-AC interfaced microsource model which is connected to the power grid through a controllable switch. A double loop current-regulated voltage control scheme for the DC-AC interface is designed. In the case of the load disturbance and the model uncertainties, the inner voltage and current loop are produced based on the H∞ robust control strategies. The outer power loop uses the droop characteristic controller. Finally, the scheme is simulated using the Matlab/Simulink. The simulation results demonstrate that DC-AC interfaced microsource system can supply high quality power. Also, the proposed control scheme can make the system switch smoothly between the isolated mode and grid-connected mode. 更多 展开更多
关键词 MICROGRID DC-AC interfaced microsource H∞ robust control f-v droop characteristic smooth switching
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