The combined effects of martensite-austenite（MA）constituent and pearlite colony on cleavage crack initiation in the simulated coarse-grained heat-affected zone（CGHAZ）of V-N-Ti microalloyed offshore platform steel ...The combined effects of martensite-austenite（MA）constituent and pearlite colony on cleavage crack initiation in the simulated coarse-grained heat-affected zone（CGHAZ）of V-N-Ti microalloyed offshore platform steel under different heat inputs were investigated.The results of welding simulation,instrumented impact test,and quantitative analysis indicated that the size of the MA constituent decreased with the increase in cooling time,and by contrast,the size of the pearlite colony increased.According to Griffith theory,the critical sizes of cleavage microcracks were calculated.With the increase of cooling time,the calculated microcrack size could be characterized by the size of the MA constituent first,and then fitted with the size of the pearlite colony.Moreover,the calculated microcrack size variation was opposite to the microcrack initiation energy.This phenomenon is probably due to the combined effects of the MA constituent and pearlite colony with increasing the cooling time of the specimen′s temperature from800 to 500 ℃.展开更多
The precipitation of Ti(V)N(C)in high-carbon steel PD_3 during thermomechanicol treatment at austenitic temperatures after deformation has been observed.The average size of Ti(V)N(C)particles may reduce with the incre...The precipitation of Ti(V)N(C)in high-carbon steel PD_3 during thermomechanicol treatment at austenitic temperatures after deformation has been observed.The average size of Ti(V)N(C)particles may reduce with the increase of strain and the decrease of thermomechanical treatment temperature,and vise versa.The growth of Ti(V)N(C)particles at 920°C is found to be controlled by the interface reaction between precipitated particles and matrix.展开更多
We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideal...We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.展开更多
基金Item Sponsored by Vanitec-CISRI Vanadium Technology Center
文摘The combined effects of martensite-austenite（MA）constituent and pearlite colony on cleavage crack initiation in the simulated coarse-grained heat-affected zone（CGHAZ）of V-N-Ti microalloyed offshore platform steel under different heat inputs were investigated.The results of welding simulation,instrumented impact test,and quantitative analysis indicated that the size of the MA constituent decreased with the increase in cooling time,and by contrast,the size of the pearlite colony increased.According to Griffith theory,the critical sizes of cleavage microcracks were calculated.With the increase of cooling time,the calculated microcrack size could be characterized by the size of the MA constituent first,and then fitted with the size of the pearlite colony.Moreover,the calculated microcrack size variation was opposite to the microcrack initiation energy.This phenomenon is probably due to the combined effects of the MA constituent and pearlite colony with increasing the cooling time of the specimen′s temperature from800 to 500 ℃.
文摘The precipitation of Ti(V)N(C)in high-carbon steel PD_3 during thermomechanicol treatment at austenitic temperatures after deformation has been observed.The average size of Ti(V)N(C)particles may reduce with the increase of strain and the decrease of thermomechanical treatment temperature,and vise versa.The growth of Ti(V)N(C)particles at 920°C is found to be controlled by the interface reaction between precipitated particles and matrix.
文摘We report on the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of the Pd/Ti/n-InP Schottky barrier diodes (SBDs) in the temperature range 160-400 K in steps of 40 K. The barrier heights and ideality factors of Schottky contact are found in the range 0.35 eV (I-V), 0.73 eV (C-V) at 160 K and 0.63 eV (I-V), 0.61 eV (C-V) at 400 K, respectively. It is observed that the zero-bias barrier height decreases and ideality factor n increase with a decrease in temperature, this behaviour is attributed to barrier inhomogeneities by assuming Gaussian distribution at the interface. The calculated value of series resistance (Rs) from the forward I-V characteristics is decreased with an increase in temperature. The homogeneous barrier height value of approximately 0.71 eV for the Pd/Ti Schottky diode has been obtained from the linear relationship between the temperature-dependent experimentally effective barrier heights and ideality factors. The zero-bias barrier height ( ) versus 1/2kT plot has been drawn to obtain evidence of a Gaussian distribution of the barrier heights and values of = 0.80 eV and = 114 mV for the mean barrier height and standard deviation have been obtained from the plot, respectively. The modified Richardson ln(I0/T2)- ( ) versus 1000/T plot has a good linearity over the investigated temperature range and gives the mean barrier height ( ) and Richardson constant (A*) values as 0.796 eV and 6.16 Acm-2K-2 respectively. The discrepancy between Schottky barrier heights obtained from I-V and C-V measurements is also interpreted.
