The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperatu...The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2.14 at 100 ℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is -1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV.展开更多
High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were ...High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.展开更多
We study,by means of numerical simulation,the impact of doping and traps on the performance of the＂solar blind＂ultraviolet Schottky detector based on AlGaN.We implemented physical models and AlGaN material propertie...We study,by means of numerical simulation,the impact of doping and traps on the performance of the＂solar blind＂ultraviolet Schottky detector based on AlGaN.We implemented physical models and AlGaN material properties taken from the literature,or from the interpolation between the binary materials（GaN and AlN） weighted by the mole fractions.We found that doping and traps highly impact the spectral response of the device,and in particular a compromise in the doping concentration must be reached in order to optimize the spectral response of the detector.These results give us a powerful tool to quantitatively understand the impact of elaboration and processing conditions on photodetector characteristics,and thus identify the key issues for the development of the technology.展开更多
Based on the principles of metal-semiconductor-metal Schottky barrier photodetectors（MSM-PD）, using the carrier rate equations,the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is con...Based on the principles of metal-semiconductor-metal Schottky barrier photodetectors（MSM-PD）, using the carrier rate equations,the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is constructed through an appropriately equivalent process.By using the Pspice analytical function of Cadence soft on the model,the relationship between the photocurrent and the terminal voltage under different UV light powers is analyzed.The result shows that under the given UV power,the photocurrent increases and tends to become saturated gradually as the terminal voltage of the device increases,and that under different UV powers,the photocurrent increases with increasing incident power.Then the analysis of the relationship between the photocurrent and the terminal voltage under the different ratios of interdigital electrode space and width is carried out when the UV power is given.The results show that when the ratio of interdigital electrode space and width（L/W） equals 1,the photocurrent tends to be at a maximum.展开更多
Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) we...Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.展开更多
Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many resear...Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.展开更多
Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on gla...Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.展开更多
The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet(UV) detector is calculated by solving the photo-carrier continuity equation,and the photo-carrier screening electric field is calcul...The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet(UV) detector is calculated by solving the photo-carrier continuity equation,and the photo-carrier screening electric field is calculated according to Poisson's equation.Using the numerical calculation method,a novel model of photo-carrier screening effect is presented.Then the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is discussed.The influence of incident power,bias voltage and carrier life time on the photo-carrier screening effect is also analyzed.It is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone,the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied voltage.Besides,the incident light duration has strong impact on the photo-carrier screening effect.展开更多
Zinc oxide(ZnO)serves as a crucial functional semiconductor with a wide direct bandgap of approximately 3.37 eV.Solvothermal reaction is commonly used in the synthesis of ZnO micro/nanostructures,given its low cost,si...Zinc oxide(ZnO)serves as a crucial functional semiconductor with a wide direct bandgap of approximately 3.37 eV.Solvothermal reaction is commonly used in the synthesis of ZnO micro/nanostructures,given its low cost,simplicity,and easy implementation.Moreover,ZnO morphology engineering has become desirable through the alteration of minor conditions in the reaction process,particularly at room temperature.In this work,ZnO micro/nanostructures were synthesized in a solution by varying the amounts of the ammonia added at low temperatures(including room temperature).The formation of Zn^(2+)complexes by ammonia in the precursor regulated the reaction rate of the morphology engineering of ZnO,which resulted in various structures,such as nanoparticles,nanosheets,microflowers,and single crystals.Finally,the obtained ZnO was used in the optoelectronic application of ultraviolet detectors.展开更多
Low-cost and large-area uniform amorphous Ga_(2)O_(3)(α-Ga_(2)O_(3))solar-blind ultraviolet(UV)detectors have garnered significant attention in recent years.Oxygen vacancy(VO)defects are generally considered as the p...Low-cost and large-area uniform amorphous Ga_(2)O_(3)(α-Ga_(2)O_(3))solar-blind ultraviolet(UV)detectors have garnered significant attention in recent years.Oxygen vacancy(VO)defects are generally considered as the predominant defects affecting the detector performance.Reducing VOconcentration generally results in both low dark current and low photo current,significantly limiting further improvement of the photo-to-dark current ratio(PDCR)parameter.Herein,a delicately optimized atomic layer deposition(ALD)method is revealed having the capability to break through the trade-off in a-Ga_(2)O_(3),achieving both low dark current and high photocurrent simultaneously.For a clear demonstration,a-Ga_(2)O_(3)contrast sample is prepared by magnetron sputtering and compared as well.Combined tests are performed including xray photoelectron spectroscopy,photoluminescence,electron paramagnetic resonance and Fourier-transform infrared spectroscopy.It is found that ALDα-Ga_(2)O_(3)has a lower VOconcentration,but also a lower dangling bonds concentration which are strong non-irradiation recombination centers.Therefore,decrease of dangling bonds is suggested to compensate for the low optical gain induced by low VOconcentration and promote the PDCR to~2.06×10^(6).Our findings firstly prove that the dangling bonds also play an important role in determining the a-Ga_(2)O_(3)detection performance,offering new insights for further promotion ofα-Ga_(2)O_(3)UV detector performance via dual optimization of dangling bonds and VO.展开更多
This study describes the fabrication of ZnO-nanowire films by electro-chemical anodization of Zn foil. The ZnO films are characterized by field emission scanning electron microscopy, X-ray diffraction patterns, and tr...This study describes the fabrication of ZnO-nanowire films by electro-chemical anodization of Zn foil. The ZnO films are characterized by field emission scanning electron microscopy, X-ray diffraction patterns, and transmission electron microscopy, respectively. The ultraviolet （UV） photo-response properties of the surface-contacted ZnO film are studied through the current evolution processes under different relative humidities. Unlike the usually observed current spectra of the ZnO films, the drop time is shorter than the rise time. The photo-conductivity gain G and the response time T are both increased with the increase of the applied bias. The photo-conductivity gain G is lowered with the increase of the environmental humidity, while the response time τ- is increased. These results can be explained by considering three different surface processes： 1） the electron-hole （e-p） pair generation by the UV light illumination, 2） the following surface O2 species desorption, and 3） the photo-catalytic hydrolysis of water molecules adsorbed on the ZnO surface. The slow-rise and fast-drop current feature is suggested to originate from the sponge-like structure of the ZnO nanowires.展开更多
文摘The I-V characteristic of GaN-based p-i-n ultraviolet detector is presented. It is measured at different temperatures and analyzed with changing temperature. The ideality factor of the device is 2.09 at room temperature. The maximum ideality factor is 2.14 at 100 ℃, which declines above 100 ℃, and the minimum ideality factor is 1.26 at 300 ℃. The coefficient of forward voltage vs. temperature is -1.97 mV/℃ with a forward current of 1 mA. Based on double injection model, the deep lying impurity activation energy in the i-region is 0.1 343 eV.
基金Research of the photoelectric properties of theκ(ε)-Ga_(2)O_(3)films was supported by the Russian Science Foundation,grant number 20-79-10043-P.Fabrication of the ultraviolet detectors based on theκ(ε)-Ga_(2)O_(3)layers was supported by the grant under the Decree of the Government of the Rus-sian Federation No.220 of 09 April 2010(Agreement No.075-15-2022-1132 of 01 July 2022)Research of the structural prop-erties of theκ(ε)-Ga_(2)O_(3)was supported by the St.Petersburg State University,grant number 94034685.
文摘High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.
文摘We study,by means of numerical simulation,the impact of doping and traps on the performance of the＂solar blind＂ultraviolet Schottky detector based on AlGaN.We implemented physical models and AlGaN material properties taken from the literature,or from the interpolation between the binary materials（GaN and AlN） weighted by the mole fractions.We found that doping and traps highly impact the spectral response of the device,and in particular a compromise in the doping concentration must be reached in order to optimize the spectral response of the detector.These results give us a powerful tool to quantitatively understand the impact of elaboration and processing conditions on photodetector characteristics,and thus identify the key issues for the development of the technology.
基金Project supported by the National Natural Science Foundation of China(Nos.60976011,51072196,51072195)the National Basic Research Program of China(No.2011CB301901)
文摘Based on the principles of metal-semiconductor-metal Schottky barrier photodetectors（MSM-PD）, using the carrier rate equations,the circuit simulation model of a GaN-based MSM photovoltaic ultraviolet detector is constructed through an appropriately equivalent process.By using the Pspice analytical function of Cadence soft on the model,the relationship between the photocurrent and the terminal voltage under different UV light powers is analyzed.The result shows that under the given UV power,the photocurrent increases and tends to become saturated gradually as the terminal voltage of the device increases,and that under different UV powers,the photocurrent increases with increasing incident power.Then the analysis of the relationship between the photocurrent and the terminal voltage under the different ratios of interdigital electrode space and width is carried out when the UV power is given.The results show that when the ratio of interdigital electrode space and width（L/W） equals 1,the photocurrent tends to be at a maximum.
基金support of the Russian Science Foundation,grant number 20-79-10043-P.
文摘Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.
基金Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400904)the National Natural Science Foundation for Distinguished Young Scholars,China(Grant No.61725403)+5 种基金the National Natural Science Foundation of China(Grant Nos.61574142,61322406,61704171,and 11705206)the Key Program of International Partnership Program of the Chinese Academy of Sciences(Grant No.181722KYSB20160015)the Special Project for Inter-government Collaboration of State Key Research and Development Program,China(Grant No.2016YFE0118400)the Science and Technology Service Network Initiative of the Chinese Academy of Sciences,the Jilin Provincial Science&Technology Department,China(Grant No.20180201026GX)the Interdisciplinary Innovation Team of the Chinese Academy of Sciencesthe Youth Innovation Promotion Association of the Chinese Academy of Sciences(Grant No.2015171)
文摘Ultraviolet(UV) photodetectors based on wide band gap semiconductor have attracted much attention for their small volume, low working voltage, long lifetime, good chemical and thermal stability. Up to now, many researches have been done on the semiconductors based UV detectors and some kinds of detectors have been made, such as metal–semiconductor–metal(MSM), Schottky, and PIN-type detectors. However, the sensitivity values of those detectors are still far from the expectation. Recent years, surface plasmon(SP) has been considered to be an effective way to enhance the sensitivity of semiconductor based UV photodetector. When the light is matched with the resonance frequency of surface plasmon, the localized field enhancement or scattering effect will happen and thus the spectral response will be enhanced.Here, we present an overview of surface plasmon enhancing the performance of UV detectors, including the GaN, ZnO,and other wide band gap semiconductor UV detectors. Both fundamental and experimental achievements are contained in this review.
基金support by Indo-Iraq Cultural Exchange Program of ICCR (Indian Council for Cultural Relations)
文摘Fabrication and characterization of metal-semiconductor-metal ultraviolet （MSM UV） photodetector based on ZnO ultra thin （nano scale） films with Pd Schottky contact are reported. The ZnO thin film was grown on glass substrate by thermal oxidation of preeposited zinc films using vacuum deposition technique. With applied voltage in the range from -3V to 3V, the contrast ratio, responsivity, and detectivity for an incident radiation of 0.1 mW at 365 nm wavelength were estimated. The proposed device exhibited a high gain which was attributed to the hole trapping at semiconductor-metal interface. I-V characteristics were studied and the parameters, such as ideality factor, leakage current, resistance-areaproduct, and barrier height, were extracted from the measured data.
基金supported by the National Natural Science Foundation of China (Grant Nos. 60976068 and 60936005)the Cultivation Fund of the Key Scientific and Technical Innovation Projectthe Ministry of Education of China Program (Grant No. 708083)
文摘The photo-carrier density in the depletion region of the GaN-based p-i-n ultraviolet(UV) detector is calculated by solving the photo-carrier continuity equation,and the photo-carrier screening electric field is calculated according to Poisson's equation.Using the numerical calculation method,a novel model of photo-carrier screening effect is presented.Then the influence of photo-carrier screening effect on the distribution of photo-carrier density in the depletion region of p-i-n detector is discussed.The influence of incident power,bias voltage and carrier life time on the photo-carrier screening effect is also analyzed.It is concluded that the influence of photo-carrier screening effect on the performance of GaN-based p-i-n UV detector is non-monotone,the maximum of carrier drift velocity and the minimum of response time can be realized by adjusting the applied voltage.Besides,the incident light duration has strong impact on the photo-carrier screening effect.
基金funded by the National Natural Science F oundation of China(No.52172205)。
文摘Zinc oxide(ZnO)serves as a crucial functional semiconductor with a wide direct bandgap of approximately 3.37 eV.Solvothermal reaction is commonly used in the synthesis of ZnO micro/nanostructures,given its low cost,simplicity,and easy implementation.Moreover,ZnO morphology engineering has become desirable through the alteration of minor conditions in the reaction process,particularly at room temperature.In this work,ZnO micro/nanostructures were synthesized in a solution by varying the amounts of the ammonia added at low temperatures(including room temperature).The formation of Zn^(2+)complexes by ammonia in the precursor regulated the reaction rate of the morphology engineering of ZnO,which resulted in various structures,such as nanoparticles,nanosheets,microflowers,and single crystals.Finally,the obtained ZnO was used in the optoelectronic application of ultraviolet detectors.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62404146,12174275,62174113)the Basic and Applied Basic Research Foundation of Guangdong Province,China(Grant Nos.2023A1515110730 and 2023A1515140094)the INTPART Program at the Research Council of Norway(Project number 322382)。
文摘Low-cost and large-area uniform amorphous Ga_(2)O_(3)(α-Ga_(2)O_(3))solar-blind ultraviolet(UV)detectors have garnered significant attention in recent years.Oxygen vacancy(VO)defects are generally considered as the predominant defects affecting the detector performance.Reducing VOconcentration generally results in both low dark current and low photo current,significantly limiting further improvement of the photo-to-dark current ratio(PDCR)parameter.Herein,a delicately optimized atomic layer deposition(ALD)method is revealed having the capability to break through the trade-off in a-Ga_(2)O_(3),achieving both low dark current and high photocurrent simultaneously.For a clear demonstration,a-Ga_(2)O_(3)contrast sample is prepared by magnetron sputtering and compared as well.Combined tests are performed including xray photoelectron spectroscopy,photoluminescence,electron paramagnetic resonance and Fourier-transform infrared spectroscopy.It is found that ALDα-Ga_(2)O_(3)has a lower VOconcentration,but also a lower dangling bonds concentration which are strong non-irradiation recombination centers.Therefore,decrease of dangling bonds is suggested to compensate for the low optical gain induced by low VOconcentration and promote the PDCR to~2.06×10^(6).Our findings firstly prove that the dangling bonds also play an important role in determining the a-Ga_(2)O_(3)detection performance,offering new insights for further promotion ofα-Ga_(2)O_(3)UV detector performance via dual optimization of dangling bonds and VO.
基金Project supported by the National Natural Science Foundation of China (Grant No. 60907023)the Shandong Excellent Young Scientist Research Award Fund Project,China (Grant No. BS2011CL002)+1 种基金the Natural Science Foundation of Heilongjiang Province,China (Grant No. A200912)the Science and Technology Progress Project of Weihai,China (Grant Nos. IMJQ01110003 and 20090393)
文摘This study describes the fabrication of ZnO-nanowire films by electro-chemical anodization of Zn foil. The ZnO films are characterized by field emission scanning electron microscopy, X-ray diffraction patterns, and transmission electron microscopy, respectively. The ultraviolet （UV） photo-response properties of the surface-contacted ZnO film are studied through the current evolution processes under different relative humidities. Unlike the usually observed current spectra of the ZnO films, the drop time is shorter than the rise time. The photo-conductivity gain G and the response time T are both increased with the increase of the applied bias. The photo-conductivity gain G is lowered with the increase of the environmental humidity, while the response time τ- is increased. These results can be explained by considering three different surface processes： 1） the electron-hole （e-p） pair generation by the UV light illumination, 2） the following surface O2 species desorption, and 3） the photo-catalytic hydrolysis of water molecules adsorbed on the ZnO surface. The slow-rise and fast-drop current feature is suggested to originate from the sponge-like structure of the ZnO nanowires.
