An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4 H-SiC layer by semiconductor micro-fabrication technology. The spectral response ...An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4 H-SiC layer by semiconductor micro-fabrication technology. The spectral response characteristics of the detector are analyzed. The ultraviolet response range is 208—356 nm with a responsivity larger than 0.4 mA/W and the infrared response range is 1.016—1.17 μm with a responsivity larger than 0.4 mA/W at room temperature and 5 V bias voltage. The peak responsivity of the graphene in the ultraviolet-C band at 232 nm is 0.73 mA/W and in the near infrared band at 1.148 μm is 0.64 mA/W. The peak responsivity of SiC layer in the ultraviolet-B band at 312 nm is 2.27 mA/W. Besides, the responsivity increases with the bias voltage.展开更多
基金supported by the National Natural Science Foundation of China(No.61804166)
文摘An ultraviolet-infrared dual-color detector is proposed and realized based on the vertical integration of single-layer graphene and a 4 H-SiC layer by semiconductor micro-fabrication technology. The spectral response characteristics of the detector are analyzed. The ultraviolet response range is 208—356 nm with a responsivity larger than 0.4 mA/W and the infrared response range is 1.016—1.17 μm with a responsivity larger than 0.4 mA/W at room temperature and 5 V bias voltage. The peak responsivity of the graphene in the ultraviolet-C band at 232 nm is 0.73 mA/W and in the near infrared band at 1.148 μm is 0.64 mA/W. The peak responsivity of SiC layer in the ultraviolet-B band at 312 nm is 2.27 mA/W. Besides, the responsivity increases with the bias voltage.
