Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this cas...Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this case,it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_(x).Herein,an in-line ozone-gas oxidation(OGO)process to prepare the tunnel SiO_(x) is proposed to be applied in n-type TOPCon solar cell fabrication,which has obtained better performance compared with previously reported in-line plasma-assisted N2O oxidation(PANO)process.In order to explore the underlying mechanism,the electrical properties of the OGO and PANO tunnel SiO_(x) are analyzed by deep-level transient spectroscopy technology.Notably,continuous interface states in the band gap are detected for OGO tunnel SiO_(x),with the interface state densities(D_(it))of 1.2×10^(12)–3.6×10^(12) cm^(-2) eV^(-1) distributed in Ev+(0.15–0.40)eV,which is significantly lower than PANO tunnel SiO_(x).Furthermore,X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO_(2)(Si^(4+))in OGO tunnel SiO_(x) is higher than which in PANO tunnel SiO_(x).Therefore,we ascribe the lower D_(it) to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process.In a nutshell,OGO tunnel SiO_(x) has a great potential to be applied in n-type TOPCon silicon solar cell,which may be available for global photovoltaics industry.展开更多
In this work, the trap-assisted tunneling（TAT） mechanism is modeled as a two-step physical process for charge trapping memory（CTM）. The influence of the TAT mechanism on CTM performance is investigated in consider...In this work, the trap-assisted tunneling（TAT） mechanism is modeled as a two-step physical process for charge trapping memory（CTM）. The influence of the TAT mechanism on CTM performance is investigated in consideration of various trap positions and energy levels. For the simulated CTM structure, simulation results indicate that the positions of oxide traps related to the maximum TAT current contribution shift towards the substrate interface and charge storage layer interface during time evolutions in programming and retention operations, respectively. Lower programming voltage and retention operations under higher temperature are found to be more sensitive to tunneling oxide degradation.展开更多
A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 1...A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 11V to WL(word-line)for a OTP cell of 0.35μm ETOX(EEPROM tunnel oxide)type by MagnaChip.We use 5V transistors on column data paths to reduce the area of column data paths since they require small areas.In addition,we secure device reliability by using HV(high-voltage)transistors in the WL driver.Furthermore,we change from a static logic to a dynamic logic used for the WL driver in the core circuit.Also,we optimize the WD(write data)switch circuit.Thus,we can implement them with a small-area design.In addition,we implement the address predecoder with a small-area logic circuit.The area of the designed 32 kbit OTP with 5V and HV devices is 674.725μm×258.75μm(=0.1745mm2)and is 56.3% smaller than that using 3.3V devices.展开更多
The advent of the passivating contact concept and its accelerated development have propelled crystalline silicon(c-Si)solar cells into a new era,establishing them as a driving force behind the latest breakthroughs in ...The advent of the passivating contact concept and its accelerated development have propelled crystalline silicon(c-Si)solar cells into a new era,establishing them as a driving force behind the latest breakthroughs in photovoltaic(PV)conversion efficiency.The continual refinement of passivation performance is pivotal to the fabrication of high-efficiency devices.Here,we report a novel deuteration/hydrogenation hybrid strategy involving the deliberate incorporation of deuterium(D,2H)via atmosphere annealing to neutralize defects and enhance the passivation performance of tunnel oxide passivating contact(TOPCon)solar cells.Our findings reveal that hydrogen and deuterium can coexist within the TOPCon structure,where they exhibit a synergistic effect.Notably,when combined at an optimal ratio of 1%deuterium oxide(D2O),this mixture significantly enhances passivation performance compared to the individual addition of hydrogen or deuterium.Specifically,it results in an approximate 15 mV increase in the implied open-circuit voltage(iVOC)for doublesided passivated samples,achieving an average iVOC value of 734 mV.The mechanisms underlying the enhancement in passivation can be inferred,suggesting that deuterium forms stronger bonds with silicon than hydrogen,effectively passivating interfaces and neutralizing defects within polycrystalline silicon(poly-Si).In the presence of dangling bonds on the poly-Si surface,the presence of H2O molecules expands the range of silicon atoms in the vicinity of the contact site where electrons are exchanged or reacted with D2O both horizontally and vertically,demonstrating enhanced adsorption capacity.Proof-of-concept TOPCon solar cells using this novel deuteration/hydrogenation hybrid strategy achieve a promising efficiency of 23.19%,accompanied by substantial improvements in electrical performance,thereby highlighting the exceptional potential of deuterium passivation for high-efficiency TOPCon solar cells.展开更多
As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is ana...As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed.展开更多
基金supported by the National Natural Science Foundation of China(Nos.62025403 and U23A20354)the Natural Science Foundation of Zhejiang Province(LD22E020001)+1 种基金“Pioneer”and“Leading Goose”R&D Program of Zhejiang(2022C01215,2024C01055)the Fundamental Research Funds for the Central Universities(226-2022-00200).
文摘Nowadays,a stack of heavily doped polysilicon(poly-Si)and tunnel oxide(SiO_(x))is widely employed to improve the passivation performance in n-type tunnel oxide passivated contact(TOPCon)silicon solar cells.In this case,it is critical to develop an in-line advanced fabrication process capable of producing high-quality tunnel SiO_(x).Herein,an in-line ozone-gas oxidation(OGO)process to prepare the tunnel SiO_(x) is proposed to be applied in n-type TOPCon solar cell fabrication,which has obtained better performance compared with previously reported in-line plasma-assisted N2O oxidation(PANO)process.In order to explore the underlying mechanism,the electrical properties of the OGO and PANO tunnel SiO_(x) are analyzed by deep-level transient spectroscopy technology.Notably,continuous interface states in the band gap are detected for OGO tunnel SiO_(x),with the interface state densities(D_(it))of 1.2×10^(12)–3.6×10^(12) cm^(-2) eV^(-1) distributed in Ev+(0.15–0.40)eV,which is significantly lower than PANO tunnel SiO_(x).Furthermore,X-ray photoelectron spectroscopy analysis indicate that the percentage of SiO_(2)(Si^(4+))in OGO tunnel SiO_(x) is higher than which in PANO tunnel SiO_(x).Therefore,we ascribe the lower D_(it) to the good inhibitory effects on the formation of low-valent silicon oxides during the OGO process.In a nutshell,OGO tunnel SiO_(x) has a great potential to be applied in n-type TOPCon silicon solar cell,which may be available for global photovoltaics industry.
基金supported by the National Natural Science Foundation of China(Grant Nos.61404005,61421005,and 91434201)
文摘In this work, the trap-assisted tunneling（TAT） mechanism is modeled as a two-step physical process for charge trapping memory（CTM）. The influence of the TAT mechanism on CTM performance is investigated in consideration of various trap positions and energy levels. For the simulated CTM structure, simulation results indicate that the positions of oxide traps related to the maximum TAT current contribution shift towards the substrate interface and charge storage layer interface during time evolutions in programming and retention operations, respectively. Lower programming voltage and retention operations under higher temperature are found to be more sensitive to tunneling oxide degradation.
基金Project supported by the Second Stage of Brain Korea 21 Projects,Korea
文摘A 32 kbit OTP(one-time programmable)memory for MCUs(micro-controller units)used in remote controllers was designed.This OTP memory is used for program and data storage.It is required to apply 5.5V to BL(bit-line)and 11V to WL(word-line)for a OTP cell of 0.35μm ETOX(EEPROM tunnel oxide)type by MagnaChip.We use 5V transistors on column data paths to reduce the area of column data paths since they require small areas.In addition,we secure device reliability by using HV(high-voltage)transistors in the WL driver.Furthermore,we change from a static logic to a dynamic logic used for the WL driver in the core circuit.Also,we optimize the WD(write data)switch circuit.Thus,we can implement them with a small-area design.In addition,we implement the address predecoder with a small-area logic circuit.The area of the designed 32 kbit OTP with 5V and HV devices is 674.725μm×258.75μm(=0.1745mm2)and is 56.3% smaller than that using 3.3V devices.
基金the National Key Research and Development Program of China(No.2022YFB4200201)Natural Science Foundation of Tianjin(Nos.23JCYBJC01620,22JCYBJC01300)+3 种基金the National Natural Science Foundation of China(Nos.62074084,62274098)the project of highefficiency heterojunction solar cell technology and equipment industrialization(TC220A04A-159)111 Project(B16027)the Fundamental Research Funds for the Central Universities,Nankai University(Nos.63241573,63241568).
文摘The advent of the passivating contact concept and its accelerated development have propelled crystalline silicon(c-Si)solar cells into a new era,establishing them as a driving force behind the latest breakthroughs in photovoltaic(PV)conversion efficiency.The continual refinement of passivation performance is pivotal to the fabrication of high-efficiency devices.Here,we report a novel deuteration/hydrogenation hybrid strategy involving the deliberate incorporation of deuterium(D,2H)via atmosphere annealing to neutralize defects and enhance the passivation performance of tunnel oxide passivating contact(TOPCon)solar cells.Our findings reveal that hydrogen and deuterium can coexist within the TOPCon structure,where they exhibit a synergistic effect.Notably,when combined at an optimal ratio of 1%deuterium oxide(D2O),this mixture significantly enhances passivation performance compared to the individual addition of hydrogen or deuterium.Specifically,it results in an approximate 15 mV increase in the implied open-circuit voltage(iVOC)for doublesided passivated samples,achieving an average iVOC value of 734 mV.The mechanisms underlying the enhancement in passivation can be inferred,suggesting that deuterium forms stronger bonds with silicon than hydrogen,effectively passivating interfaces and neutralizing defects within polycrystalline silicon(poly-Si).In the presence of dangling bonds on the poly-Si surface,the presence of H2O molecules expands the range of silicon atoms in the vicinity of the contact site where electrons are exchanged or reacted with D2O both horizontally and vertically,demonstrating enhanced adsorption capacity.Proof-of-concept TOPCon solar cells using this novel deuteration/hydrogenation hybrid strategy achieve a promising efficiency of 23.19%,accompanied by substantial improvements in electrical performance,thereby highlighting the exceptional potential of deuterium passivation for high-efficiency TOPCon solar cells.
文摘As SOI-CMOS technology nodes reach the tens ofnanometer regime, body-contacts become more and more ineffective to suppress the floating body effect. In this paper, self-bias effect as the cause for this failure is analyzed and discussed in depth with respect to different structures and conditions. Other alternative approaches to suppressing the floating body effect are also introduced and discussed.
