A novel trench field stop （FS） insulated gate bipolar transistor （IGBT） with a trench shorted anode （TSA） is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown v...A novel trench field stop （FS） insulated gate bipolar transistor （IGBT） with a trench shorted anode （TSA） is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61274080)the Postdoctoral Science Foundation of China(No.2013M541585)
文摘A novel trench field stop （FS） insulated gate bipolar transistor （IGBT） with a trench shorted anode （TSA） is proposed. By introducing a trench shorted anode, the TSA-FS-IGBT can obviously improve the breakdown voltage. As the simulation results show, the breakdown voltage is improved by a factor of 19.5% with a lower leakage current compared with the conventional FS-IGBT. The turn off time of the proposed structure is 50% lower than the conventional one with less than 9% voltage drop increased at a current density of 150 A/cm2. Additionally, there is no snapback observed. As a result, the TSA-FS-IGBT has a better trade-off relationship between the turn off loss and forward drop.
