Trivalent rare-earth ions （La3＋,Pr3＋,Nd3＋,Sm3＋,Gd3＋,Tb3＋,Dy3＋,Ho3＋,Er3＋,Tm3＋,and Yb3＋） were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS：Eu2＋ in order to enha...Trivalent rare-earth ions （La3＋,Pr3＋,Nd3＋,Sm3＋,Gd3＋,Tb3＋,Dy3＋,Ho3＋,Er3＋,Tm3＋,and Yb3＋） were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS：Eu2＋ in order to enhance the fluorescence properties.It was found that Sm3＋ and Tb3＋ had the best photoluminescence stimulated luminescence （PSL） effect among the selected trivalent rare-earth ions.All the SrS：Eu2＋ samples doped by different trivalent rare-earth ions could be stimulated by 980 nm laser after being exposed to the conventional sunlight,and they emitted PSL with the peak located at 615 nm.The result also indicated that some co-doped rare earth ions could increase fluorescence intensities of the traditional electron trapping materials SrS：Eu2＋.展开更多
The trapping effects of yellow, blue, green, cyan and white sticky traps on adult Bradysia odoriphaga Yang et Zhang were studied in the field during its peak occurrence period. The results showed that yellow sticky tr...The trapping effects of yellow, blue, green, cyan and white sticky traps on adult Bradysia odoriphaga Yang et Zhang were studied in the field during its peak occurrence period. The results showed that yellow sticky trap received the best trapping effect on adult B. odoriphaga, follow by blue and green sticky traps, while cyan and white sticky traps received worse effects. The yellow sticky trap settled at south position was most attractive to adult B. odoriphaga, which had significant differences with tho^e placed at east and north positions （P 〈 0.05 ） ; the yellow sticky trap at hanging height of 0 cm showed significantly higher attractive- ness than those at heights of 20 and 40 cm.展开更多
For nanostructure SnO2,it is very difficult for its electric properties to accurately control due to the presence of abundant surface states.The introduction of Sm can improve the traps in surface space charge region ...For nanostructure SnO2,it is very difficult for its electric properties to accurately control due to the presence of abundant surface states.The introduction of Sm can improve the traps in surface space charge region of SnO2 nanowires,resulting in a controllable storage charge effect.For the single nanowire-based two-terminal device,two surface state-related back-to-back diodes are formed.At a relatively large voltage,electrons can be injected into the traps in surface space charge region from negative electrode,resulting in a decrease of surface barrier connected with negative electrode,and contrarily electrons can be extracted from the traps in surface space charge region into positive electrode,resulting in an increase of surface barrier connected with positive electrode.The reversible injection and extraction induce a nonvolatile resistive switching memory effect.展开更多
A pocket coherent population trapping（CPT） atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated.Using the differential detecting...A pocket coherent population trapping（CPT） atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated.Using the differential detecting magneto–optic rotation effect,a CPT spectrum with the background canceled and a high signal-to-noise ratio is obtained.The experimental results reveal that the sensitivity of the proposed scheme can be improved by half an order,and the ability to detect weak magnetic fields is extended one-fold.Therefore,the proposed scheme is suited to realize a pocket-size CPT magnetometer.展开更多
A new serials of Er^3＋/Yb^3＋ co-doped tellurite-silicate glasses were prepared by the technique of high-temperature mehing. The thermal stability, absorption spectra, emission spectra and upconversion spectra were m...A new serials of Er^3＋/Yb^3＋ co-doped tellurite-silicate glasses were prepared by the technique of high-temperature mehing. The thermal stability, absorption spectra, emission spectra and upconversion spectra were measured and investigated. It is found that these kinds of glasses have good thermal stability, broad FWHM and large stimulated emission cross-section. The three upconversion emission at 525, 546, 658 nm, corresponding to the ^2H11/2→^4Ⅰ15/2, ^4S3/2→4^Ⅰ15/2 and ^F9/2→^4Ⅰ15/2 transitions of Dr^3＋ ions,展开更多
In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupl...In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage （l-V） curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of A1GaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.展开更多
In the microwave 199Hg＋ trapped-ion clock, the frequency instability degradation caused by the Dick effect is un- avoidable because of the periodical interrogating field. In this paper, the general expression of the ...In the microwave 199Hg＋ trapped-ion clock, the frequency instability degradation caused by the Dick effect is un- avoidable because of the periodical interrogating field. In this paper, the general expression of the sensitivity function g（t） to the frequency fluctuation of the interrogating field with Nπ-pulse （N is odd） is derived. According to the measured phase noise of the 40.5-GHz microwave synthesizer, the Dick-effect limited Allan deviation of our 199Hg＋ trapped-ion clock is worked out. The results indicate that the limited Allan deviations are about 1.75 ×10-13/√τ and 3.03 ×10-13/√τ respectively in the linear ion trap and in the two-segment extended linear ion trap under our present experimental parameters.展开更多
Five different trapping treatments, spraying attractant on bottle surface and spraying attractant inside the bottles with 0, 50,100 and 200 mL water, were set to trap Bactrocera dorsalis and B. cucurbitae in guava （P...Five different trapping treatments, spraying attractant on bottle surface and spraying attractant inside the bottles with 0, 50,100 and 200 mL water, were set to trap Bactrocera dorsalis and B. cucurbitae in guava （Psidium guajava） park. The results showed that when the usage of attractant was 1 g, both Haonian and Wende had trapping effect on B. dorsalis and B. cucurbitae. The trapping effect of Haonian on B. dorsalis was better than that of Wende, while their trapping effects on B. cucurbitae was just the opposite. The trapping effects of different treatments had great difference. The trapping effect of Haonian on two species of fruit flies enhanced with the increasing volume of water, and reached the ma^mum value as the water volume was 200 mL. With the increasing volume of water, the trap- ping effect of Wende on two species of fruit flies first increased, and then decreased, which reached the maximum value as the water volume was 50 mL. Different treatments with attractants spraying inside bottles had better trapping effects on two species of fruit flies than that spraying on bottle surface.展开更多
The key application technology for sex pheromone of Grapholitha molesta was studied from the aspects of different hanging heights and orientations, dif- ferent doses and types of traps through the tests on trapping qu...The key application technology for sex pheromone of Grapholitha molesta was studied from the aspects of different hanging heights and orientations, dif- ferent doses and types of traps through the tests on trapping quantity of G. molesta in fields. The results showed that the trapping effect was enhanced when the hanging height was increased, and the trapping effect was the best in west direction. The trapping effect was enhanced when the dosage was increased. When it was up to 6 lures, the trapping effect was the best with 38.75 head/trap; the next was 2 lures with 31.00 head/trap. All types of traps had trapping ability to G. mo- lesta, among which triangle trapper was the best, followed by self-made bottle trap. Their trapping effects were 138.75 and 100.25 head/trap, respectively.展开更多
The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The co...The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects.展开更多
[Objectives] This study was to find out the effect of trap space layout on the trapped number of Spodoptera litura in tobacco field. [Methods]From2015 to 2017,investigations were made using different hanging heights,d...[Objectives] This study was to find out the effect of trap space layout on the trapped number of Spodoptera litura in tobacco field. [Methods]From2015 to 2017,investigations were made using different hanging heights,distances( densities) and equidistant plane layout in the tobacco planting area in central Guizhou Province. [Results] The trapped number of S. litura was different at different hanging heights of the trap,and some had the difference reached the5% significant level in the trapped number. The optimum hanging height was 1. 5-2. 0 m. The trapping effect was the best at the field layout distance of20. 0-30. 0 m( density of 5-8 traps/hm^2). Under the conditions of even distribution at the equal distance between traps of 40.0 m in the field,the accumulated trapped number of S. litura from April to August was in the order of outer ring > central ring > inner ring,presenting the zonal distribution. The difference in the trapped numbers was significant among different rings,reaching the 5% significant level. [Conclusions]This study provided theoretical bases for the physiochemical control of S. litura in tobacco field.展开更多
A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface Shockley–Read–Hall model. The consistency between simula...A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface Shockley–Read–Hall model. The consistency between simulation results and measured data in the different temperatures shows that this interface model can accurately describe the capture and emission performance for near-interface oxide traps, and can well explain the hysteresis-voltage response with increasing temperature, which is intensified by the interaction between deep oxide traps and shallow oxide traps. This also indicates that the near-interface traps result in an increase of threshold-voltage shift in SiC MOSFET with increasing temperature.展开更多
We experimentally demonstrate the quantum anti-Zeno effect in a two-level system based on a single trapped ion ^（40）Ca~＋. In the large detuning regime, we show that the transfer from the ground state to the excited...We experimentally demonstrate the quantum anti-Zeno effect in a two-level system based on a single trapped ion ^（40）Ca~＋. In the large detuning regime, we show that the transfer from the ground state to the excited state can be remarkably enhanced by the inserted projection measurements. The inserted measurements in our experiment are realized by the electron shelving technique. Compared to the ideal projection measurement, which makes the quantum state collapse instantaneously, a practical electron shelving process needs a finite time duration. The minimum time for this collapse process is shown to be inversely proportional to the square of the coupling strength between the measurement laser and the system.展开更多
The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped parti...The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized.展开更多
Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold perf...Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.展开更多
This study was conducted to explore and seek high-efficiency and safe green control techniques on sugarcane borers,promote green control of diseases and pests of sugarcane and build a resource-conserving,environmental...This study was conducted to explore and seek high-efficiency and safe green control techniques on sugarcane borers,promote green control of diseases and pests of sugarcane and build a resource-conserving,environmentally friendly and sustainable governance system of diseases and pests of sugarcane.A new sex pheromone trap of sugarcane borers,abamectin· Bacillus thuringiensis (Bt) and tebufenozide were selected and applied in field trials.The use of the new sex pheromone trap of sugarcane borers (6 traps/hm 2) in combination with 0.05% abamectin·10 billion active gemmae/g B.thuringiensis (Bt) WP (1.8 kg/hm 2) or new sex pheromone trap of sugarcane borers (6 traps/hm 2) in combination with 200 g/L tebufenozide SC (1.5 L/hm 2) were the best in the sugarcane production.New sex pheromone trap of sugarcane borers should be installed in early march,and biological agents were mixed with water 900 kg per hectare and sprayed evenly sugarcane plants at the beginning of April.Their control effects of dead heart rate and bored stalk rate could be more than 69.98% and 49.09%,respectively,which were superior to that of the control pesticide 3.6% bisultap GR (90 kg/hm 2).The results showed that new sex pheromone trap of sugarcane borers in combination with abamectin· B.thuringiensis (Bt) or tebufenozide was the optimum mode of green control techniques on sugarcane borers.When it was alternately or coordinately used with other technology,it could delay the emergence and development of drug resistance,and it was worthy of widespread popularization and application in sugarcane area.展开更多
In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep leve...In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.展开更多
In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out u...In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance.展开更多
[Objective]The paper was to study the control effect of pheromone insect-attracting board on tea green leafhopper（Empoasca vitis Gothe）in fields. [Method]Pheromone insect-attracting board and ordinary insect-attract...[Objective]The paper was to study the control effect of pheromone insect-attracting board on tea green leafhopper（Empoasca vitis Gothe）in fields. [Method]Pheromone insect-attracting board and ordinary insect-attracting board were used to trap tea green leafhopper in fields,and control efficacies were studied.[Result]The daily trapping effect of pheromone insect-attracting board on tea green leafhopper was 19.0 insect/grid,while that of ordinary insect-attracting board was 13.8 insect/grid.The highest control effect of pheromone insect-attracting board and ordinary insect-attracting board were 71.6% and 63. 6%,respectively.The distribution of tea green leafhopper in two types of boards showed the following regularities：more in upper edge and less in lower edge of boards,more on both sides and less in the middle of boards.The mean values of control effects of two insect-attracting boards were significantly different（t =5.66展开更多
基金Project supported by the National Natural Science Foundations of China (20876002, 20976002)the Beijing Natural Science Foundation (2091002)Funding Project for Academic Human Resources Development in Institutions of Higher Learning under the Jurisdiction of Beijing Municipality
文摘Trivalent rare-earth ions （La3＋,Pr3＋,Nd3＋,Sm3＋,Gd3＋,Tb3＋,Dy3＋,Ho3＋,Er3＋,Tm3＋,and Yb3＋） were investigated as the codoped auxiliary sensitizer for the electron trapping materials SrS：Eu2＋ in order to enhance the fluorescence properties.It was found that Sm3＋ and Tb3＋ had the best photoluminescence stimulated luminescence （PSL） effect among the selected trivalent rare-earth ions.All the SrS：Eu2＋ samples doped by different trivalent rare-earth ions could be stimulated by 980 nm laser after being exposed to the conventional sunlight,and they emitted PSL with the peak located at 615 nm.The result also indicated that some co-doped rare earth ions could increase fluorescence intensities of the traditional electron trapping materials SrS：Eu2＋.
基金Supported by Special Fund for Agro-scientific Research in the Public Interest(201303027)
文摘The trapping effects of yellow, blue, green, cyan and white sticky traps on adult Bradysia odoriphaga Yang et Zhang were studied in the field during its peak occurrence period. The results showed that yellow sticky trap received the best trapping effect on adult B. odoriphaga, follow by blue and green sticky traps, while cyan and white sticky traps received worse effects. The yellow sticky trap settled at south position was most attractive to adult B. odoriphaga, which had significant differences with tho^e placed at east and north positions （P 〈 0.05 ） ; the yellow sticky trap at hanging height of 0 cm showed significantly higher attractive- ness than those at heights of 20 and 40 cm.
基金financially supported by the National Natural Science Foundation of China(No.51571107)the Key Project of Hunan Provincial Department Education(No.17A222)
文摘For nanostructure SnO2,it is very difficult for its electric properties to accurately control due to the presence of abundant surface states.The introduction of Sm can improve the traps in surface space charge region of SnO2 nanowires,resulting in a controllable storage charge effect.For the single nanowire-based two-terminal device,two surface state-related back-to-back diodes are formed.At a relatively large voltage,electrons can be injected into the traps in surface space charge region from negative electrode,resulting in a decrease of surface barrier connected with negative electrode,and contrarily electrons can be extracted from the traps in surface space charge region into positive electrode,resulting in an increase of surface barrier connected with positive electrode.The reversible injection and extraction induce a nonvolatile resistive switching memory effect.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11304362 and 61434005)
文摘A pocket coherent population trapping（CPT） atomic magnetometer scheme that uses a vertical cavity surface emitting laser as a light source is proposed and experimentally investigated.Using the differential detecting magneto–optic rotation effect,a CPT spectrum with the background canceled and a high signal-to-noise ratio is obtained.The experimental results reveal that the sensitivity of the proposed scheme can be improved by half an order,and the ability to detect weak magnetic fields is extended one-fold.Therefore,the proposed scheme is suited to realize a pocket-size CPT magnetometer.
文摘A new serials of Er^3＋/Yb^3＋ co-doped tellurite-silicate glasses were prepared by the technique of high-temperature mehing. The thermal stability, absorption spectra, emission spectra and upconversion spectra were measured and investigated. It is found that these kinds of glasses have good thermal stability, broad FWHM and large stimulated emission cross-section. The three upconversion emission at 525, 546, 658 nm, corresponding to the ^2H11/2→^4Ⅰ15/2, ^4S3/2→4^Ⅰ15/2 and ^F9/2→^4Ⅰ15/2 transitions of Dr^3＋ ions,
基金Project supported by the National Natural Science Foundation of China(Grant No.61306113)
文摘In this paper, two-dimensional （2D） transient simulations of an A1GaN/GaN high-electron-mobility transistor （HEMT） are carded out and analyzed to investigate the current collapse due to trapping effects. The coupling effect of the trapping and thermal effects are taken into account in our simulation. The turn-on pulse gate-lag transient responses with different quiescent biases are obtained, and the pulsed current-voltage （l-V） curves are extracted from the transients. The experimental results of both gate-lag transient current and pulsed I-V curves are reproduced by the simulation, and the current collapse due to the trapping effect is explained from the view of physics based on the simulation results. In addition, the results show that bulk acceptor traps can influence the gate-lag transient characteristics of A1GaN/GaN HEMTs besides surface traps and that the thermal effect can accelerate the emission of captured electrons for traps. Pulse transient simulation is meaningful in analyzing the mechanism of dynamic current collapse, and the work in this paper will benefit the reliability study and model development of GaN-based devices.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11074248 and 11474320)
文摘In the microwave 199Hg＋ trapped-ion clock, the frequency instability degradation caused by the Dick effect is un- avoidable because of the periodical interrogating field. In this paper, the general expression of the sensitivity function g（t） to the frequency fluctuation of the interrogating field with Nπ-pulse （N is odd） is derived. According to the measured phase noise of the 40.5-GHz microwave synthesizer, the Dick-effect limited Allan deviation of our 199Hg＋ trapped-ion clock is worked out. The results indicate that the limited Allan deviations are about 1.75 ×10-13/√τ and 3.03 ×10-13/√τ respectively in the linear ion trap and in the two-segment extended linear ion trap under our present experimental parameters.
基金Supported by Special Fund for Agro-scientific Research in the Public Interest( 201103026-1)
文摘Five different trapping treatments, spraying attractant on bottle surface and spraying attractant inside the bottles with 0, 50,100 and 200 mL water, were set to trap Bactrocera dorsalis and B. cucurbitae in guava （Psidium guajava） park. The results showed that when the usage of attractant was 1 g, both Haonian and Wende had trapping effect on B. dorsalis and B. cucurbitae. The trapping effect of Haonian on B. dorsalis was better than that of Wende, while their trapping effects on B. cucurbitae was just the opposite. The trapping effects of different treatments had great difference. The trapping effect of Haonian on two species of fruit flies enhanced with the increasing volume of water, and reached the ma^mum value as the water volume was 200 mL. With the increasing volume of water, the trap- ping effect of Wende on two species of fruit flies first increased, and then decreased, which reached the maximum value as the water volume was 50 mL. Different treatments with attractants spraying inside bottles had better trapping effects on two species of fruit flies than that spraying on bottle surface.
基金Supported by Special Fund for Agro-scientific Research in the Public Interest( 201103024)
文摘The key application technology for sex pheromone of Grapholitha molesta was studied from the aspects of different hanging heights and orientations, dif- ferent doses and types of traps through the tests on trapping quantity of G. molesta in fields. The results showed that the trapping effect was enhanced when the hanging height was increased, and the trapping effect was the best in west direction. The trapping effect was enhanced when the dosage was increased. When it was up to 6 lures, the trapping effect was the best with 38.75 head/trap; the next was 2 lures with 31.00 head/trap. All types of traps had trapping ability to G. mo- lesta, among which triangle trapper was the best, followed by self-made bottle trap. Their trapping effects were 138.75 and 100.25 head/trap, respectively.
基金Project supported by the National Natural Science Foundation of China （Grant Nos 10675043, 10575031 and 10675042）.
文摘The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied, A computer code for solving the Fokker-Planck equation in a toroidal geometry is developed and employed. The code is suitable for various auxiliary heating and current drive schemes in tokamak plasmas. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized. It is shown that, as an electrostatic force, the lower hybrid wave causes some of the trapped electrons to be untrapped and lose their energy, which can cut the LHCD efficiency by about 30%. The ITER scaling law is also used to estimate the trapped electron effects.
基金Supported by the Science and Technology Project of Guizhou Tobacco Company,China(201510)
文摘[Objectives] This study was to find out the effect of trap space layout on the trapped number of Spodoptera litura in tobacco field. [Methods]From2015 to 2017,investigations were made using different hanging heights,distances( densities) and equidistant plane layout in the tobacco planting area in central Guizhou Province. [Results] The trapped number of S. litura was different at different hanging heights of the trap,and some had the difference reached the5% significant level in the trapped number. The optimum hanging height was 1. 5-2. 0 m. The trapping effect was the best at the field layout distance of20. 0-30. 0 m( density of 5-8 traps/hm^2). Under the conditions of even distribution at the equal distance between traps of 40.0 m in the field,the accumulated trapped number of S. litura from April to August was in the order of outer ring > central ring > inner ring,presenting the zonal distribution. The difference in the trapped numbers was significant among different rings,reaching the 5% significant level. [Conclusions]This study provided theoretical bases for the physiochemical control of S. litura in tobacco field.
基金Supported by the Science Challenge Project under Grant No TZ2018003
文摘A two-dimensional electrical SiC MOS interface model including interface and near-interface traps is established based on the relevant tunneling and interface Shockley–Read–Hall model. The consistency between simulation results and measured data in the different temperatures shows that this interface model can accurately describe the capture and emission performance for near-interface oxide traps, and can well explain the hysteresis-voltage response with increasing temperature, which is intensified by the interaction between deep oxide traps and shallow oxide traps. This also indicates that the near-interface traps result in an increase of threshold-voltage shift in SiC MOSFET with increasing temperature.
基金Project supported by the National Basic Research Program of China(Grant No.2016YFA0301903)the National Natural Science Foundation of China(Grant Nos.11174370,11304387,61632021,11305262,11574398,and N 61205108)the Research Plan Project of National University of Defense Technology,China(Grant No.ZK16-03-04)
文摘We experimentally demonstrate the quantum anti-Zeno effect in a two-level system based on a single trapped ion ^（40）Ca~＋. In the large detuning regime, we show that the transfer from the ground state to the excited state can be remarkably enhanced by the inserted projection measurements. The inserted measurements in our experiment are realized by the electron shelving technique. Compared to the ideal projection measurement, which makes the quantum state collapse instantaneously, a practical electron shelving process needs a finite time duration. The minimum time for this collapse process is shown to be inversely proportional to the square of the coupling strength between the measurement laser and the system.
基金Supported by the National Natural Science Foundation of China （10675043, 10575031 and 10675042）
文摘The effects of trapped electrons on off-axis lower hybrid current drive （LHCD） in tokamaks are studied. The influence of the resonance regime on the current drive efficiency as well as the influence of trapped particle fraction on the current drive efficiency are emphasized.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61574109 and 61204092)
文摘Trap-assisted tunneling（TAT） has attracted more and more attention, because it seriously affects the sub-threshold characteristic of tunnel field-effect transistor（TFET）. In this paper, we assess subthreshold performance of double gate TFET（DG-TFET） through a band-to-band tunneling（BTBT） model, including phonon-assisted scattering and acoustic surface phonons scattering. Interface state density profile（D_（it）） and the trap level are included in the simulation to analyze their effects on TAT current and the mechanism of gate leakage current.
基金Supported by Sugar Crop Research System(CARS-170303)Training Project of Yunling Industry and Technology Leading Talents“Control of Sugarcane Harmful Organisms”(2018LJRC56)Special Fund of Agricultural Industry Research System in Yunnan Province
文摘This study was conducted to explore and seek high-efficiency and safe green control techniques on sugarcane borers,promote green control of diseases and pests of sugarcane and build a resource-conserving,environmentally friendly and sustainable governance system of diseases and pests of sugarcane.A new sex pheromone trap of sugarcane borers,abamectin· Bacillus thuringiensis (Bt) and tebufenozide were selected and applied in field trials.The use of the new sex pheromone trap of sugarcane borers (6 traps/hm 2) in combination with 0.05% abamectin·10 billion active gemmae/g B.thuringiensis (Bt) WP (1.8 kg/hm 2) or new sex pheromone trap of sugarcane borers (6 traps/hm 2) in combination with 200 g/L tebufenozide SC (1.5 L/hm 2) were the best in the sugarcane production.New sex pheromone trap of sugarcane borers should be installed in early march,and biological agents were mixed with water 900 kg per hectare and sprayed evenly sugarcane plants at the beginning of April.Their control effects of dead heart rate and bored stalk rate could be more than 69.98% and 49.09%,respectively,which were superior to that of the control pesticide 3.6% bisultap GR (90 kg/hm 2).The results showed that new sex pheromone trap of sugarcane borers in combination with abamectin· B.thuringiensis (Bt) or tebufenozide was the optimum mode of green control techniques on sugarcane borers.When it was alternately or coordinately used with other technology,it could delay the emergence and development of drug resistance,and it was worthy of widespread popularization and application in sugarcane area.
基金an outcome of the collaborative R&D work undertaken in the project under the Visvesvaraya PhD Scheme of Ministry of Electronics&Information Technology,Govt.of India,being implemented by Digital India Corporation。
文摘In this paper,drain current transient characteristics ofβ-Ga2O3 high electron mobility transistor(HEMT)are studied to access current collapse and recovery time due to dynamic population and de-population of deep level traps and interface traps.An approximately 10 min,and 1 h of recovery time to steady-state drain current value is measured under 1 ms of stress on the gate and drain electrodes due to iron(Fe)–dopedβ-Ga2O3 substrate and germanium(Ge)–dopedβ-Ga2O3 epitaxial layer respectively.On-state current lag is more severe due to widely reported defect trap EC–0.82 e V over EC–0.78 e V,-0.75 e V present in Iron(Fe)-dopedβ-Ga2O3 bulk crystals.A negligible amount of current degradation is observed in the latter case due to the trap level at EC–0.98 e V.It is found that occupancy of ionized trap density varied mostly under the gate and gate–source area.This investigation of reversible current collapse phenomenon and assessment of recovery time inβ-Ga2O3 HEMT is carried out through 2 D device simulations using appropriate velocity and charge transport models.This work can further help in the proper characterization ofβ-Ga2O3 devices to understand temporary and permanent device degradation.
文摘In this work, the effects of GaN channel traps and temperature on the performance of AlGaN/AlN/GaN/AlGaN high electron mobility transistors(HEMTs) on Si(111) substrate, were investigated. 2 D simulations carried out using the Silvaco TCAD simulator tool for different drain and gate voltages showed that acceptor-like traps in the channel have a significant influence on the DC and RF characteristics. It was found that deeper acceptors below the conduction band with larger concentration have a more pronounced effect on the transistor performance. Meanwhile, the donor-like traps show no influence. Pulsing the device with different pulse widths and bias conditions, as well as increasing temperature, showed that the traps are more ionized when the pulse is wider or the temperature is higher, which can degrade the drain current and thus the DC characteristics of the transistor. Passivation of the transistor has also a beneficial effect on performance.
基金Supported by Science and Technology Promotion Project of Ningbo Forestry Bureau "Application Research and Extension of Insect Pheromone in Tea Garden"(2010L05)
文摘[Objective]The paper was to study the control effect of pheromone insect-attracting board on tea green leafhopper（Empoasca vitis Gothe）in fields. [Method]Pheromone insect-attracting board and ordinary insect-attracting board were used to trap tea green leafhopper in fields,and control efficacies were studied.[Result]The daily trapping effect of pheromone insect-attracting board on tea green leafhopper was 19.0 insect/grid,while that of ordinary insect-attracting board was 13.8 insect/grid.The highest control effect of pheromone insect-attracting board and ordinary insect-attracting board were 71.6% and 63. 6%,respectively.The distribution of tea green leafhopper in two types of boards showed the following regularities：more in upper edge and less in lower edge of boards,more on both sides and less in the middle of boards.The mean values of control effects of two insect-attracting boards were significantly different（t =5.66
