Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on A10.27 Ga0.73N/GaN heterostructures were fabricated. Specific contact resistivities were measured by the linear transmission line method （LTLM） and the circular tra...Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on A10.27 Ga0.73N/GaN heterostructures were fabricated. Specific contact resistivities were measured by the linear transmission line method （LTLM） and the circular transmission line method （CTLM） ,respectively. A minimum specific contact resistivity of 1.46× 10 ^-5Ω· cm^2z was obtained by evaporating a Ti（10nm）/Al（100nm）/Ni（40nm）/Au（100nm） multi-layer and annealing for 30s at 650℃ in ultra-high purity N2 ambient. A10.27 Ga0.73 N/GaN photoconductor ultraviolet （UV） photodetectors were prepared. The dark current-voltage （I-V） characteristics of the detectors were measured and the result shows that the I- V curve was linear. Experimental results indicate that good ohmic contact on the Al0.27 Ga0.73 N/GaN heterostructure is obtained and it can be applied in high- performance AlGaN/GaN UV photodetector fabrications.展开更多
Through-casing resistivity logging(TCRL)is a new kind of logging method for formation evaluation,reservoir monitoring and saturation changes tracking.In this paper,the basic principle of TCRL is de-tailed,and the modi...Through-casing resistivity logging(TCRL)is a new kind of logging method for formation evaluation,reservoir monitoring and saturation changes tracking.In this paper,the basic principle of TCRL is de-tailed,and the modified transmission line equation method(MTLEM)is first proposed in China.The MTLEM has been employed to simulate the responses of TCRL,on the basis of which,the effects of formation resistivity,cement and casing on the responses of TCRL are analyzed,and the signals in-duced in different formations are also calculated,which can help the design of TCRL tool and data processing and interpretation in China.展开更多
基金the Pre-Research Foundation from the National Ministries and Commissions(Nos.51323040118,513080302)~~
文摘Ohmic contacts of Ti/Al/Ni/Au multi-layer metal on A10.27 Ga0.73N/GaN heterostructures were fabricated. Specific contact resistivities were measured by the linear transmission line method （LTLM） and the circular transmission line method （CTLM） ,respectively. A minimum specific contact resistivity of 1.46× 10 ^-5Ω· cm^2z was obtained by evaporating a Ti（10nm）/Al（100nm）/Ni（40nm）/Au（100nm） multi-layer and annealing for 30s at 650℃ in ultra-high purity N2 ambient. A10.27 Ga0.73 N/GaN photoconductor ultraviolet （UV） photodetectors were prepared. The dark current-voltage （I-V） characteristics of the detectors were measured and the result shows that the I- V curve was linear. Experimental results indicate that good ohmic contact on the Al0.27 Ga0.73 N/GaN heterostructure is obtained and it can be applied in high- performance AlGaN/GaN UV photodetector fabrications.
基金Supported by the China National Petroleum Corporation (CNPC) Project (Grant No.04A30302)
文摘Through-casing resistivity logging(TCRL)is a new kind of logging method for formation evaluation,reservoir monitoring and saturation changes tracking.In this paper,the basic principle of TCRL is de-tailed,and the modified transmission line equation method(MTLEM)is first proposed in China.The MTLEM has been employed to simulate the responses of TCRL,on the basis of which,the effects of formation resistivity,cement and casing on the responses of TCRL are analyzed,and the signals in-duced in different formations are also calculated,which can help the design of TCRL tool and data processing and interpretation in China.
