Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochem...Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochemical sensors because of their limited sensitivity and selectivity.Here,we present a millimeter-scale all-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)organic electrochemical transistor(OECT)platform that integrates dual-mode sensing with enzyme/metal-free operation for ultrasensitive biomarker monitoring.By engineering polycrystalline PEDOT:PSS channels via H_2 SO_4 post-treatment,the device achieves record-high conductivity(about(2312.0±29.9)S·cm^(–1)),maximum transconductance(about(2.82±0.12)mS),and on/off ratio(about 210.0±7.8),enabling signal amplification at low gate voltages.The dual-mode strategy combines the selectivity of electrochemistry with the sensitivity of OECTs,realizing simultaneous detection of glucose,AA,UA,and DA with clinical-level sensitivity:detection limits down to 8 nmol·L^(–1)(glucose),0.5 nmol·L^(–1)(AA),5 nmol·L^(–1)(DA),and 0.5 nmol·L^(–1)(UA).Validation using human urine samples yielded recovery rates of 94%–114%.This flexible sensing platform provides a new pathway for the development of wearable biosensors for precision diagnostics.展开更多
Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has...Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.展开更多
In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5...In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.展开更多
The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromo...The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.展开更多
The high-quality semiconductor InGa ZnO(IGZO)alloy thin films with different indium(In)elemental contents were deposit utilized magnetron sputtering.The novel bilayer heterojunction TFT devices based on our fabricated...The high-quality semiconductor InGa ZnO(IGZO)alloy thin films with different indium(In)elemental contents were deposit utilized magnetron sputtering.The novel bilayer heterojunction TFT devices based on our fabricated IGZO films were proposed,and their performance exhibited significant improvement compared to single layer IGZO TFTs.In the bilayer heterojunction TFT,the field-effect mobility was promoted to 23.5 cm^(2)·V^(-1)·s^(-1),the switching ratio reached 4.1×10^(7),and the subthreshold swing was reduced to 0.42 V/dec.Moreover,the variation of bilayer TFTs threshold voltage(Vth)was significantly suppressed,Under positive gate bias stress(PBS)and negative gate bias stress(NBS),the threshold shift is reduced to be 1.5 V and-1.1 V,respectively.The heterojunction within the bilayer IGZO films constructs a potential barrier at the interface,which facilitated the accumulation of channel electrons.Additionally,the low In-element content passivation layer in IGZO films not only preserved the channel of TFT but also reduced electron scattering,thereby the performance properties of TFT were enhancing.The excellent transistor characteristics of devices demonstrate the feasibility of our proposed bilayer heterojunction TFT,which will promote the basic research of IGZO device and accelerate the practical application of transparency IGZO TFT.展开更多
Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a ...Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a planar integrated highly-reliable metal-ferroelectric-metal-insulator-semiconductor FeTFTs device,in which the weak erase issue is suppressed by implanting a floating gate,and the interface de-fects are reduced by simplifying the fabrication process.These lead to significant improvements in device performance,including large memory window(4.3 V),high conductance dynamic range(1400),high en-durance(10^(12)),and low variation(cycle-to-cycle:2.5%/device-to-device:3.5%).Moreover,we fabricated a 16×16 FeTFTs pseudo-crossbar array for in-memory computing and experimentally demonstrated full hardware implementation of multi-layer perceptron for the classification of four fundamental arithmetic operation symbols.This work provides a potential hardware solution for implementing a highly-efficient in-memory computing system based on highly-reliable FeTFTs array.展开更多
Organic electrochemical transistors have emerged as a solution for artificial synapses that mimic the neural functions of the brain structure,holding great potentials to break the bottleneck of von Neumann architectur...Organic electrochemical transistors have emerged as a solution for artificial synapses that mimic the neural functions of the brain structure,holding great potentials to break the bottleneck of von Neumann architectures.However,current artificial synapses rely primarily on electrical signals,and little attention has been paid to the vital role of neurotransmitter-mediated artificial synapses.Dopamine is a key neurotransmitter associated with emotion regulation and cognitive processes that needs to be monitored in real time to advance the development of disease diagnostics and neuroscience.To provide insights into the development of artificial synapses with neurotransmitter involvement,this review proposes three steps towards future biomimic and bioinspired neuromorphic systems.We first summarize OECT-based dopamine detection devices,and then review advances in neurotransmitter-mediated artificial synapses and resultant advanced neuromorphic systems.Finally,by exploring the challenges and opportunities related to such neuromorphic systems,we provide a perspective on the future development of biomimetic and bioinspired neuromorphic systems.展开更多
Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency.Electrolyte-gated organic transistor...Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency.Electrolyte-gated organic transistors(EGOTs)offer significant advantages as neuromorphic devices due to their ultra-low operation voltages,minimal hardwired connectivity,and similar operation environment as electrophysiology.Meanwhile,ionic–electronic coupling and the relatively low elastic moduli of organic channel materials make EGOTs suitable for interfacing with biology.This review presents an overview of the device architectures based on organic electrochemical transistors and organic field-effect transistors.Furthermore,we review the requirements of low energy consumption and tunable synaptic plasticity of EGOTs in emulating biological synapses and how they are affected by the organic materials,electrolyte,architecture,and operation mechanism.In addition,we summarize the basic operation principle of biological sensory systems and the recent progress of EGOTs as a building block in artificial systems.Finally,the current challenges and future development of the organic neuromorphic devices are discussed.展开更多
Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunct...Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report.The energy band at the IGMO/IGZO heterojunction was characterized,and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction.Furthermore,the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8×10^(3) A/W and a large detectivity of 5.2×10^(14) Jones under 350-nm ultraviolet illumination,which will also benefit for fabrication of monolithic ultraviolet sensing chip.展开更多
The enhancement of mobility has always been a research focus in the field of thin-film transistors(TFTs).In this paper,we report a method using ultra-thin HfO2to improve the electrical performance of indium gallium zi...The enhancement of mobility has always been a research focus in the field of thin-film transistors(TFTs).In this paper,we report a method using ultra-thin HfO2to improve the electrical performance of indium gallium zinc oxide(IGZO)TFTs.HfO2not only repairs the surface morphology of the active layer,but also increases the carrier concentration.When the thickness of the HfO_(2) film was 3 nm,the mobility of the device was doubled(14.9 cm^(2)·V^(-1)·s^(-1)→29.6 cm^(2)·V^(-1)·s^(-1)),and the device exhibited excellent logic device performance.This paper provides a simple and effective method to enhance the electrical performance of IGZO TFTs,offering new ideas and experimental foundation for research into high-performance metal oxide(MO)TFTs.展开更多
Organic light-emitting transistors(OLETs)are gaining increasing attention as a promising candidate for nextgeneration display technology.However,due to the limited horizontal charge transport capability in OLETs,enhan...Organic light-emitting transistors(OLETs)are gaining increasing attention as a promising candidate for nextgeneration display technology.However,due to the limited horizontal charge transport capability in OLETs,enhancing their optical performance remains greatly challenging.In this work,an effective strategy is employed to achieve highperformance OLETs by constructing a two-dimensional molecular-scale passivation layer at the dielectric/channel interface using a promising solution-processed small-molecule material,tetratetracontane(TTC).By controlling the microscopic flows driven by intermolecular interactions near the solution meniscus,molecular self-assembly dynamics are effectively regulated,contributing to a significant transformation in molecular layer stacking mode and enabling the formation of large-area TTC thin films with two-dimensional molecular-scale surface structure and uniform morphology.The introduction of high-quality TTC passivation layer film into the dielectric/channel interface optimizes the film morphologies of overlying channel layer,effectively shields the electrostatic dipole effects at dielectric/channel interface,leading to the synergistic optoelectronic regulation and enhanced optical properties of OLETs.Consequently,high brightness of 10,077.3 cd·m^(-2),high external quantum efficiency(EQE)of 20.46%,and low voltage of 15 V are achieved in the lateral OLET.This work presents a promising approach for two-dimensional molecular-scale small molecule interfaces,and provides an effective strategy for achieving high-performance OLET devices.展开更多
In this work,the incorporation of tantalum(Ta)into p-type metal-oxide(SnO_(x))semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors(TFTs)....In this work,the incorporation of tantalum(Ta)into p-type metal-oxide(SnO_(x))semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors(TFTs).The Ta-doped SnO_(x)(SnO_(x):Ta)film is deposited by radio-frequency(RF)magnetron sputtering with a Sn:Ta(3 at.%)target and thermally annealed at 270℃ for 30 min.Here,we observe that the SnO_(x):Ta film presents increased crystallinity,reduced defect density(3.25×10^(12)cm^(−2)·eV^(−1)),and widened bandgap(1.98 eV),in comparison with the undoped SnO_(x)film.As a result,the SnO_(x):Ta TFTs exhibit a lower off-state current(Ioff),an improved on/off current ratio(2.17×10^(4)),a remarkably decreased subthreshold swing(SS)by 41%,and enhanced device stability.Additionally,by introducing Ta dopants,the fringe effect as well as the impact of channel width-to-length ratio(W/L)on electrical performances of the p-type oxide TFTs can be effectively suppressed.These results shall contribute to further exploration and development of p-type SnO_(x)TFTs.展开更多
Besides the common short-channel effect(SCE)of threshold voltage(V_(th))roll-off during the channel length(L)downscaling of In GaZnO(IGZO)thin-film transistors(TFTs),an opposite V_(th)roll-up was reported in this work...Besides the common short-channel effect(SCE)of threshold voltage(V_(th))roll-off during the channel length(L)downscaling of In GaZnO(IGZO)thin-film transistors(TFTs),an opposite V_(th)roll-up was reported in this work.Both roll-off and roll-up effects of Vth were comparatively investigated on IGZO transistors with varied gate insulator(GI),source/drain(S/D),and device architecture.For IGZO transistors with thinner GI,the SCE was attenuated due to the enhanced gate controllability over the variation of channel carrier concentration,while the Vth roll-up became more noteworthy.The latter was found to depend on the relative ratio of S/D series resistance(R_(SD))over channel resistance(R_(CH)),as verified on transistors with different S/D.Thus,an ideal S/D engineering with small R_(SD)but weak dopant diffusion is highly expected during the downscaling of L and GI in IGZO transistors.展开更多
As the size of transistors shrinks and power density increases,thermal simulation has become an indispensable part of the device design procedure.However,existing works for advanced technology transistors use simplifi...As the size of transistors shrinks and power density increases,thermal simulation has become an indispensable part of the device design procedure.However,existing works for advanced technology transistors use simplified empirical models to calculate effective thermal conductivity in the simulations.In this work,we present a dataset of size-dependent effective thermal conductivity with electron and phonon properties extracted from ab initio computations.Absolute in-plane and cross-plane thermal conductivity data of eight semiconducting materials(Si,Ge,GaN,AlN,4H-SiC,GaAs,InAs,BAs)and four metallic materials(Al,W,TiN,Ti)with the characteristic length ranging from 5 nm to 50 nm have been provided.Besides the absolute value,normalized effective thermal conductivity is also given,in case it needs to be used with updated bulk thermal conductivity in the future.展开更多
Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its appl...Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its application to catalytic silicon nanowire(SiNW)channels,known for facile low-temperature fabrication and high yield,has faced challenges primarily due to issues with precise positioning and alignment.In exploring this promising avenue,we employed an in-plane solid–liquidsolid(IPSLS)growth technique to batch-fabricate orderly arrays of ultrathin SiNWs,with diameters of DNW=22.4±2.4 nm and interwire spacing of 90 nm.An in situ channel-releasing technique has been developed to well preserve the geometry integrity of suspended SiNW arrays.By optimizing the source/drain contacts,high-performance GAA-FET devices have been successfully fabricated,based on these catalytic SiNW channels for the first time,yielding a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec−1,closing the performance gap between the catalytic SiNW-FETs and state-ofthe-art GAA-FETs fabricated by using advanced top-down EBL and EUV lithography.These results indicate that catalytic IPSLS SiNWs can also serve as the ideal 1D channels for scalable fabrication of high-performance GAA-FETs,well suited for monolithic 3D integrations.展开更多
Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabricati...Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.展开更多
Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homoge...Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.展开更多
A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surg...A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surge in research activity,attributable to the diverse functionalities and enhanced accessibility of advanced active materials.In this work,recent advances in gas sensors,specifically those utilizing Field Effect Transistors(FETs),are summarized,including device configurations,response characteristics,sensor materials,and application domains.In pursuing high-performance artificial olfactory systems,the evolution of FET gas sensors necessitates their synchronization with material advancements.These materials should have large surface areas to enhance gas adsorption,efficient conversion of gas input to detectable signals,and strong mechanical qualities.The exploration of gas-sensitive materials has covered diverse categories,such as organic semiconductor polymers,conductive organic compounds and polymers,metal oxides,metal-organic frameworks,and low-dimensional materials.The application of gas sensing technology holds significant promise in domains such as industrial safety,environmental monitoring,and medical diagnostics.This comprehensive review thoroughly examines recent progress,identifies prevailing technical challenges,and outlines prospects for gas detection technology utilizing field effect transistors.The primary aim is to provide a valuable reference for driving the development of the next generation of gas-sensitive monitoring and detection systems characterized by improved sensitivity,selectivity,and intelligence.展开更多
In vertical channel transistors(VCTs),source/drain ion implantation(I/I)represents a significant technical challenge due to inherent three-dimensional structural constraints,which induce complications such as difficul...In vertical channel transistors(VCTs),source/drain ion implantation(I/I)represents a significant technical challenge due to inherent three-dimensional structural constraints,which induce complications such as difficulties in dummy gate forma-tion and shadowing effects of I/I.This article systematically investigates the impact of different implantation conditions on the performance of VCTs with and without dummy gates through TCAD simulation.It reveals the significant role of the lightly doped regions(LDRs)naturally formed due to ion implantation in source/drain of VCTs.Furthermore,it was found that VCT with-out dummy gates can achieve an approximately 27%increase in on-state current(Ion)under the same implantation conditions,and can greatly simplify the process flow and reduce costs.Finally,N-type and P-type VCTs were successfully fabricated using this implantation method.展开更多
In recent years,organic field-effect transistors（OFETs） with high performance and novel multifunctionalities have attracted considerable attention.Meanwhile,featured with reversible photoisomerization and the corres...In recent years,organic field-effect transistors（OFETs） with high performance and novel multifunctionalities have attracted considerable attention.Meanwhile,featured with reversible photoisomerization and the corresponding variation in color,chemical/physical properties,photochromic molecules have been applied in sensors,photo-switches and memories.Incorporation of photochromic molecules to blend in the device functional layers or to modify the interfaces of OFETs is common way to build photo-transistors.In this review,we focus on the recent advantages on the study of photoresponsive transistors involving one of three typical photochromic compounds spiropyran,diarylethene and azobenzene.Three main strategies are demonstrated in detail.Firstly,photochromic molecules are doped in active layers or combined with semiconductor structure thus forming photoreversible active layers.Secondly,the modification of dielectric layer/active layer interface is mainly carried out by bilayer dielectric.Thirdly,the photo-isomerization of self-assembled monolayer（SAM） on the electrode/active layer interface can reversibly modulate the work functions and charge injection barrier,result in bifunctional OFETs.All in all,the combination of photochromic molecules and OFETs is an efficient way for the fabrication of organic photoelectric devices.Photoresponsive transistors consisted of photochromic molecules are potential candidate for real applications in the future.展开更多
基金financially supported by the National Natural Science Foundation of China(Nos.52272214,52372082,52466013,52373184,and U24A20660)Jiangxi Provincial Natural Science Foundation(Nos.20242BAB26059,20232BAB204032,20252BAC200290,20252BEJ730349,and 20252BAC240326)Doctoral Start-Up Fund of Jiangxi Science&Technology Normal University(No.2024BSQD16)。
文摘Glucose,ascorbic acid(AA),uric acid(UA),and dopamine(DA)are vital biomarkers whose dynamic concentrations correlate with critical diseases;however,multiplexed detection remains challenging for conventional electrochemical sensors because of their limited sensitivity and selectivity.Here,we present a millimeter-scale all-poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)organic electrochemical transistor(OECT)platform that integrates dual-mode sensing with enzyme/metal-free operation for ultrasensitive biomarker monitoring.By engineering polycrystalline PEDOT:PSS channels via H_2 SO_4 post-treatment,the device achieves record-high conductivity(about(2312.0±29.9)S·cm^(–1)),maximum transconductance(about(2.82±0.12)mS),and on/off ratio(about 210.0±7.8),enabling signal amplification at low gate voltages.The dual-mode strategy combines the selectivity of electrochemistry with the sensitivity of OECTs,realizing simultaneous detection of glucose,AA,UA,and DA with clinical-level sensitivity:detection limits down to 8 nmol·L^(–1)(glucose),0.5 nmol·L^(–1)(AA),5 nmol·L^(–1)(DA),and 0.5 nmol·L^(–1)(UA).Validation using human urine samples yielded recovery rates of 94%–114%.This flexible sensing platform provides a new pathway for the development of wearable biosensors for precision diagnostics.
基金supported by the Natural Science Foundation of Guangdong Province,China (No.2025A1515011654)the National Natural Science Foundation of China (No.22090053)+3 种基金the Fundamental Research Funds for National Universities,China University of Geosciences (Wuhan)support from the program of China Scholarships Council (No.202406410155)Young Elite Scientists Sponsorship Program by CAST-Doctoral Student Special Plansupport from the S&T Special Program of Huzhou (No.2024GZ07)。
文摘Field-effect nanofluidic transistors(FENTs),biomimicking the structure and functionality of neuron,act as biological transistors with the ability to gate switching responses to external stimuli.The switching ratio has been verified to evaluate the performance of FENTs,but until recently,the response time,another crucial indicator,has been ignored.Employing finite-element method,we investigated the relationship among gate charge,switching ratio and response time by divisionally manipulating gate charge,including entrance surface and the surface of confinement space,for ion transport to optimize switching capability.The dual-split gate charge on FENTs exhibits synergistic effect on switching response.Based on the two regional gate charge on FENTs,multivalence ions in lower concentration,high aspect ratio and single channel show higher switching ratio but longer response time compared to monovalent ions.The findings highlight the necessity of balancing these two signals in FENTs and offer insights for optimizing their design and expanding applications to dual-signal-detection iontronics.
基金supported in part by the National Natural Science Foundation of China(62404110,62274033)Natural Science Foundation of Jiangsu Province(BK20221453)+1 种基金Fundamental Research Funds for the Central UniversitiesNatural Science Research Start-up Foundation of Recruiting Talents of Nanjing University of Posts and Telecommunications(NY223159)。
文摘In this work,we demonstrated the InSnO(ITO)TFTs passivated with SiO_(2)via the PECVD process compatible with large-area production for the first time.The passivated ITO TFTs with various channel thicknesses(t_(ch)=4,5,6 nm)exhibit excellent electrical performance and superior uniformity.The reliability properties of ITO TFTs were evaluated in detail under positive bias stress(PBS)conditions before and after passivation.Compared to the devices without passivation,the passivated devices have only 50%threshold voltage degradation(ΔV_(th))and 50%newly generated traps due to excellent isolation of the ambient atmosphere.The negligible performance degradation of ITO TFTs with passivation during negative bias stress(NBS)and negative bias temperature stress(NBTS)verifies the outstanding immunity to the water vapor of the SiO_(2)passivation layer.Overall,the ITO TFT with the t_(ch)of 6 nm and with SiO_(2)passivation exhibits the best performance in terms of electrical properties,uniformity,and reliability,which is promising in large-area production.
基金supported by the Hunan Science Fund for Distinguished Young Scholars(2023JJ10069)the National Natural Science Foundation of China(52172169)the Project of State Key Laboratory of Precision Manufacturing for Extreme Service Performance,Central South University(ZZYJKT2024-02).
文摘The traditional von Neumann architecture has demonstrated inefficiencies in parallel computing and adaptive learn-ing,rendering it incapable of meeting the growing demand for efficient and high-speed computing.Neuromorphic comput-ing with significant advantages such as high parallelism and ultra-low power consumption is regarded as a promising pathway to overcome the limitations of conventional computers and achieve the next-generation artificial intelligence.Among various neuromorphic devices,the artificial synapses based on electrolyte-gated transistors stand out due to their low energy consump-tion,multimodal sensing/recording capabilities,and multifunctional integration.Moreover,the emerging optoelectronic neuro-morphic devices which combine the strengths of photonics and electronics have demonstrated substantial potential in the neu-romorphic computing field.Therefore,this article reviews recent advancements in electrolyte-gated optoelectronic neuromor-phic transistors.First,it provides an overview of artificial optoelectronic synapses and neurons,discussing aspects such as device structures,operating mechanisms,and neuromorphic functionalities.Next,the potential applications of optoelectronic synapses in different areas such as artificial visual system,pain system,and tactile perception systems are elaborated.Finally,the current challenges are summarized,and future directions for their developments are proposed.
基金supported by the National Natural Science Foundation of China(Grant Nos.U22A2073 and 62474197)the Basic and Applied Basic Research Foundation of Guangdong Province,China(Grant Nos.2024A1515011536 and 2025A04J7142)。
文摘The high-quality semiconductor InGa ZnO(IGZO)alloy thin films with different indium(In)elemental contents were deposit utilized magnetron sputtering.The novel bilayer heterojunction TFT devices based on our fabricated IGZO films were proposed,and their performance exhibited significant improvement compared to single layer IGZO TFTs.In the bilayer heterojunction TFT,the field-effect mobility was promoted to 23.5 cm^(2)·V^(-1)·s^(-1),the switching ratio reached 4.1×10^(7),and the subthreshold swing was reduced to 0.42 V/dec.Moreover,the variation of bilayer TFTs threshold voltage(Vth)was significantly suppressed,Under positive gate bias stress(PBS)and negative gate bias stress(NBS),the threshold shift is reduced to be 1.5 V and-1.1 V,respectively.The heterojunction within the bilayer IGZO films constructs a potential barrier at the interface,which facilitated the accumulation of channel electrons.Additionally,the low In-element content passivation layer in IGZO films not only preserved the channel of TFT but also reduced electron scattering,thereby the performance properties of TFT were enhancing.The excellent transistor characteristics of devices demonstrate the feasibility of our proposed bilayer heterojunction TFT,which will promote the basic research of IGZO device and accelerate the practical application of transparency IGZO TFT.
基金financially supported by the National Natural Science Foundation of China(Nos.62074166,62104256,62304254,and U23A20322)the Key Research and Development Plan of Hunan Province under Grant(No.2022WK2001).
文摘Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a planar integrated highly-reliable metal-ferroelectric-metal-insulator-semiconductor FeTFTs device,in which the weak erase issue is suppressed by implanting a floating gate,and the interface de-fects are reduced by simplifying the fabrication process.These lead to significant improvements in device performance,including large memory window(4.3 V),high conductance dynamic range(1400),high en-durance(10^(12)),and low variation(cycle-to-cycle:2.5%/device-to-device:3.5%).Moreover,we fabricated a 16×16 FeTFTs pseudo-crossbar array for in-memory computing and experimentally demonstrated full hardware implementation of multi-layer perceptron for the classification of four fundamental arithmetic operation symbols.This work provides a potential hardware solution for implementing a highly-efficient in-memory computing system based on highly-reliable FeTFTs array.
基金supported by the National Natural Science Foundation of China(Grant No.62074163)Beijing Natural Science Foundation(Grant No.JQ24030).
文摘Organic electrochemical transistors have emerged as a solution for artificial synapses that mimic the neural functions of the brain structure,holding great potentials to break the bottleneck of von Neumann architectures.However,current artificial synapses rely primarily on electrical signals,and little attention has been paid to the vital role of neurotransmitter-mediated artificial synapses.Dopamine is a key neurotransmitter associated with emotion regulation and cognitive processes that needs to be monitored in real time to advance the development of disease diagnostics and neuroscience.To provide insights into the development of artificial synapses with neurotransmitter involvement,this review proposes three steps towards future biomimic and bioinspired neuromorphic systems.We first summarize OECT-based dopamine detection devices,and then review advances in neurotransmitter-mediated artificial synapses and resultant advanced neuromorphic systems.Finally,by exploring the challenges and opportunities related to such neuromorphic systems,we provide a perspective on the future development of biomimetic and bioinspired neuromorphic systems.
基金financial support by the self-supporting project of Pazhou Lab(No.PZL2023ZZ0011)by National Key R&D Program of China(No.2019YFA0904801).
文摘Rapid development of artificial intelligence requires the implementation of hardware systems with bioinspired parallel information processing and presentation and energy efficiency.Electrolyte-gated organic transistors(EGOTs)offer significant advantages as neuromorphic devices due to their ultra-low operation voltages,minimal hardwired connectivity,and similar operation environment as electrophysiology.Meanwhile,ionic–electronic coupling and the relatively low elastic moduli of organic channel materials make EGOTs suitable for interfacing with biology.This review presents an overview of the device architectures based on organic electrochemical transistors and organic field-effect transistors.Furthermore,we review the requirements of low energy consumption and tunable synaptic plasticity of EGOTs in emulating biological synapses and how they are affected by the organic materials,electrolyte,architecture,and operation mechanism.In addition,we summarize the basic operation principle of biological sensory systems and the recent progress of EGOTs as a building block in artificial systems.Finally,the current challenges and future development of the organic neuromorphic devices are discussed.
基金supported by the Regional Innovation and Development Joint Fund of the National Nature Science Foundation of China(Grant No.U21A2071).
文摘Amorphous InGaZnO(IGZO)is a potential candidate for integrated circuits based on thin-film transistors(TFTs)owing to its low-temperature processability and high mobility.Amorphous InGaMgO/InGaZnO(IGMO/IGZO)heterojunction was deposited and TFTs based on IGMO/IGZO heterojunction were fabricated in this report.The energy band at the IGMO/IGZO heterojunction was characterized,and the potential well at the interface of IGZO is critical to the enhanced ultraviolet detection of the IGMO/IGZO heterojunction.Furthermore,the TFTs based on IGMO/IGZO heterojunction exhibited a high responsivity of 3.8×10^(3) A/W and a large detectivity of 5.2×10^(14) Jones under 350-nm ultraviolet illumination,which will also benefit for fabrication of monolithic ultraviolet sensing chip.
基金Project supported by the National Natural Science Foundation of China(Grant No.62441407)the Natural Science Basic Research Program of Shaanxi(Grant No.2024JCYBQN-0631)+1 种基金the Natural Science Foundation of Shaanxi Provincial Department of Education(Grant No.23JK0482)the Shaanxi Province Key R&D Program General Project-Industrial Field(Grant No.2024GX-YBXM-085)。
文摘The enhancement of mobility has always been a research focus in the field of thin-film transistors(TFTs).In this paper,we report a method using ultra-thin HfO2to improve the electrical performance of indium gallium zinc oxide(IGZO)TFTs.HfO2not only repairs the surface morphology of the active layer,but also increases the carrier concentration.When the thickness of the HfO_(2) film was 3 nm,the mobility of the device was doubled(14.9 cm^(2)·V^(-1)·s^(-1)→29.6 cm^(2)·V^(-1)·s^(-1)),and the device exhibited excellent logic device performance.This paper provides a simple and effective method to enhance the electrical performance of IGZO TFTs,offering new ideas and experimental foundation for research into high-performance metal oxide(MO)TFTs.
基金supported by the National Natural Science Foundation of China(Nos.62474011 and 62204006)Shenzhen Science and Technology Program(No.RCBS20231211090701006)+2 种基金Development and Reform Commission of Shenzhen Municipality(No.XMHT20220106002)Guangdong Key Laboratory of Flexible Optoelectronic Materials and Devices,Guangdong International Science Collaboration Base(No.2019A050505003)Shenzhen Key Laboratory of Organic Opto-electromagnetic Functional Materials of Shenzhen Science and Technology Plan(No.ZDSYS20140509094114164).
文摘Organic light-emitting transistors(OLETs)are gaining increasing attention as a promising candidate for nextgeneration display technology.However,due to the limited horizontal charge transport capability in OLETs,enhancing their optical performance remains greatly challenging.In this work,an effective strategy is employed to achieve highperformance OLETs by constructing a two-dimensional molecular-scale passivation layer at the dielectric/channel interface using a promising solution-processed small-molecule material,tetratetracontane(TTC).By controlling the microscopic flows driven by intermolecular interactions near the solution meniscus,molecular self-assembly dynamics are effectively regulated,contributing to a significant transformation in molecular layer stacking mode and enabling the formation of large-area TTC thin films with two-dimensional molecular-scale surface structure and uniform morphology.The introduction of high-quality TTC passivation layer film into the dielectric/channel interface optimizes the film morphologies of overlying channel layer,effectively shields the electrostatic dipole effects at dielectric/channel interface,leading to the synergistic optoelectronic regulation and enhanced optical properties of OLETs.Consequently,high brightness of 10,077.3 cd·m^(-2),high external quantum efficiency(EQE)of 20.46%,and low voltage of 15 V are achieved in the lateral OLET.This work presents a promising approach for two-dimensional molecular-scale small molecule interfaces,and provides an effective strategy for achieving high-performance OLET devices.
基金supported in part by National Key R&D Program of China(Grant No.2022YFE0141500)National Natural Science Foundation of China(Grant Nos.62004065 and 62274059).
文摘In this work,the incorporation of tantalum(Ta)into p-type metal-oxide(SnO_(x))semiconductor film is investigated to improve the electrical characteristics and suppress the fringe effect of thin film transistors(TFTs).The Ta-doped SnO_(x)(SnO_(x):Ta)film is deposited by radio-frequency(RF)magnetron sputtering with a Sn:Ta(3 at.%)target and thermally annealed at 270℃ for 30 min.Here,we observe that the SnO_(x):Ta film presents increased crystallinity,reduced defect density(3.25×10^(12)cm^(−2)·eV^(−1)),and widened bandgap(1.98 eV),in comparison with the undoped SnO_(x)film.As a result,the SnO_(x):Ta TFTs exhibit a lower off-state current(Ioff),an improved on/off current ratio(2.17×10^(4)),a remarkably decreased subthreshold swing(SS)by 41%,and enhanced device stability.Additionally,by introducing Ta dopants,the fringe effect as well as the impact of channel width-to-length ratio(W/L)on electrical performances of the p-type oxide TFTs can be effectively suppressed.These results shall contribute to further exploration and development of p-type SnO_(x)TFTs.
基金supported financially by National key Research and Development Program under Grant 2021YFB3600802Shenzhen Municipal Scientific Program under Grant KJZD20230923114111021。
文摘Besides the common short-channel effect(SCE)of threshold voltage(V_(th))roll-off during the channel length(L)downscaling of In GaZnO(IGZO)thin-film transistors(TFTs),an opposite V_(th)roll-up was reported in this work.Both roll-off and roll-up effects of Vth were comparatively investigated on IGZO transistors with varied gate insulator(GI),source/drain(S/D),and device architecture.For IGZO transistors with thinner GI,the SCE was attenuated due to the enhanced gate controllability over the variation of channel carrier concentration,while the Vth roll-up became more noteworthy.The latter was found to depend on the relative ratio of S/D series resistance(R_(SD))over channel resistance(R_(CH)),as verified on transistors with different S/D.Thus,an ideal S/D engineering with small R_(SD)but weak dopant diffusion is highly expected during the downscaling of L and GI in IGZO transistors.
基金Project supported by the National Key R&D Project from Ministry of Science and Technology of China(Grant No.2022YFA1203100)the National Natural Science Foundation of China(Grant No.52122606)the funding from Shanghai Polytechnic University.
文摘As the size of transistors shrinks and power density increases,thermal simulation has become an indispensable part of the device design procedure.However,existing works for advanced technology transistors use simplified empirical models to calculate effective thermal conductivity in the simulations.In this work,we present a dataset of size-dependent effective thermal conductivity with electron and phonon properties extracted from ab initio computations.Absolute in-plane and cross-plane thermal conductivity data of eight semiconducting materials(Si,Ge,GaN,AlN,4H-SiC,GaAs,InAs,BAs)and four metallic materials(Al,W,TiN,Ti)with the characteristic length ranging from 5 nm to 50 nm have been provided.Besides the absolute value,normalized effective thermal conductivity is also given,in case it needs to be used with updated bulk thermal conductivity in the future.
基金financial support received from the National Key Research Program of China under granted No.92164201the National Natural Science Foundation of China for Distinguished Young Scholars No.62325403the Fundamental Research Funds for the Central Universities,and the National Natural Science Foundation of China under No.61934004.
文摘Gate-all-around field-effect transistors(GAA-FETs)represent the leading-edge channel architecture for constructing state-of-the-art highperformance FETs.Despite the advantages offered by the GAA configuration,its application to catalytic silicon nanowire(SiNW)channels,known for facile low-temperature fabrication and high yield,has faced challenges primarily due to issues with precise positioning and alignment.In exploring this promising avenue,we employed an in-plane solid–liquidsolid(IPSLS)growth technique to batch-fabricate orderly arrays of ultrathin SiNWs,with diameters of DNW=22.4±2.4 nm and interwire spacing of 90 nm.An in situ channel-releasing technique has been developed to well preserve the geometry integrity of suspended SiNW arrays.By optimizing the source/drain contacts,high-performance GAA-FET devices have been successfully fabricated,based on these catalytic SiNW channels for the first time,yielding a high on/off current ratio of 107 and a steep subthreshold swing of 66 mV dec−1,closing the performance gap between the catalytic SiNW-FETs and state-ofthe-art GAA-FETs fabricated by using advanced top-down EBL and EUV lithography.These results indicate that catalytic IPSLS SiNWs can also serve as the ideal 1D channels for scalable fabrication of high-performance GAA-FETs,well suited for monolithic 3D integrations.
基金supported by the National Key R&D Plan of China(Grant No.2023YFB3210400)the National Natural Science Foundation of China(No.62174101)+2 种基金the Major Scientific and Technological Innovation Project of Shandong Province(2021CXGC010603)the Fundamental Research Funds of Shandong University(2020QNQT001)Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,Collaborative Innovation Center of Technology and Equipment for Biological Diagnosis and Therapy in Universities of Shandong,the Natural Science Foundation of Qingdao-Original exploration project(No.24-4-4-zrjj-139-jch).
文摘Flexible electronics are transforming our lives by making daily activities more convenient.Central to this innovation are field-effect transistors(FETs),valued for their efficient signal processing,nanoscale fabrication,low-power consumption,fast response times,and versatility.Graphene,known for its exceptional mechanical properties,high electron mobility,and biocompatibility,is an ideal material for FET channels and sensors.The combination of graphene and FETs has given rise to flexible graphene field-effect transistors(FGFETs),driving significant advances in flexible electronics and sparked a strong interest in flexible biomedical sensors.Here,we first provide a brief overview of the basic structure,operating mechanism,and evaluation parameters of FGFETs,and delve into their material selection and patterning techniques.The ability of FGFETs to sense strains and biomolecular charges opens up diverse application possibilities.We specifically analyze the latest strategies for integrating FGFETs into wearable and implantable flexible biomedical sensors,focusing on the key aspects of constructing high-quality flexible biomedical sensors.Finally,we discuss the current challenges and prospects of FGFETs and their applications in biomedical sensors.This review will provide valuable insights and inspiration for ongoing research to improve the quality of FGFETs and broaden their application prospects in flexible biomedical sensing.
基金supported by Zhejiang Provincial Natural Science Foundation of China(No.LZ24E020001).
文摘Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.
基金supported by the National Key R&D Program of China(No.2023YFC3707201)the National Natural Science Foundation of China(No.52320105003)+2 种基金the Informatization Plan of Chinese Academy of Sciences(No.CAS-WX2023PY-0103)the Fundamental Research Funds for the Central Universities(No.E3ET1803)sponsored by the Alliance of International Science Organizations(ANSO)scholarship for young talents.
文摘A sensor,serving as a transducer,produces a quantifiable output in response to a predetermined input stimulus,which may be of a chemical or physical nature.The field of gas detection has experienced a substantial surge in research activity,attributable to the diverse functionalities and enhanced accessibility of advanced active materials.In this work,recent advances in gas sensors,specifically those utilizing Field Effect Transistors(FETs),are summarized,including device configurations,response characteristics,sensor materials,and application domains.In pursuing high-performance artificial olfactory systems,the evolution of FET gas sensors necessitates their synchronization with material advancements.These materials should have large surface areas to enhance gas adsorption,efficient conversion of gas input to detectable signals,and strong mechanical qualities.The exploration of gas-sensitive materials has covered diverse categories,such as organic semiconductor polymers,conductive organic compounds and polymers,metal oxides,metal-organic frameworks,and low-dimensional materials.The application of gas sensing technology holds significant promise in domains such as industrial safety,environmental monitoring,and medical diagnostics.This comprehensive review thoroughly examines recent progress,identifies prevailing technical challenges,and outlines prospects for gas detection technology utilizing field effect transistors.The primary aim is to provide a valuable reference for driving the development of the next generation of gas-sensitive monitoring and detection systems characterized by improved sensitivity,selectivity,and intelligence.
文摘In vertical channel transistors(VCTs),source/drain ion implantation(I/I)represents a significant technical challenge due to inherent three-dimensional structural constraints,which induce complications such as difficulties in dummy gate forma-tion and shadowing effects of I/I.This article systematically investigates the impact of different implantation conditions on the performance of VCTs with and without dummy gates through TCAD simulation.It reveals the significant role of the lightly doped regions(LDRs)naturally formed due to ion implantation in source/drain of VCTs.Furthermore,it was found that VCT with-out dummy gates can achieve an approximately 27%increase in on-state current(Ion)under the same implantation conditions,and can greatly simplify the process flow and reduce costs.Finally,N-type and P-type VCTs were successfully fabricated using this implantation method.
基金supported financially by the National Natural Science Foundation of China(Nos.21302212 and 21522209)the "Strategic Priority Research Program"(No.XDB12010100)
文摘In recent years,organic field-effect transistors（OFETs） with high performance and novel multifunctionalities have attracted considerable attention.Meanwhile,featured with reversible photoisomerization and the corresponding variation in color,chemical/physical properties,photochromic molecules have been applied in sensors,photo-switches and memories.Incorporation of photochromic molecules to blend in the device functional layers or to modify the interfaces of OFETs is common way to build photo-transistors.In this review,we focus on the recent advantages on the study of photoresponsive transistors involving one of three typical photochromic compounds spiropyran,diarylethene and azobenzene.Three main strategies are demonstrated in detail.Firstly,photochromic molecules are doped in active layers or combined with semiconductor structure thus forming photoreversible active layers.Secondly,the modification of dielectric layer/active layer interface is mainly carried out by bilayer dielectric.Thirdly,the photo-isomerization of self-assembled monolayer（SAM） on the electrode/active layer interface can reversibly modulate the work functions and charge injection barrier,result in bifunctional OFETs.All in all,the combination of photochromic molecules and OFETs is an efficient way for the fabrication of organic photoelectric devices.Photoresponsive transistors consisted of photochromic molecules are potential candidate for real applications in the future.
