We evaluate the impact of temperature on the output behavior of a carbon nanotube field effect transistor （CNFET） based chaotic generator. The sources cause the variations in both current-voltage characteristics of ...We evaluate the impact of temperature on the output behavior of a carbon nanotube field effect transistor （CNFET） based chaotic generator. The sources cause the variations in both current-voltage characteristics of the CNFET device and an overall chaotic circuit is pointed out. To verify the effect of temperature variation on the output dynamics of the chaotic circuit, a simulation is performed by employing the CNFET compact model of Wong et al. in HSPICE with a temperature range from -100℃ to 100℃. The obtained results with time series, frequency spectra, and bifurcation diagram from the simulation demonstrate that temperature plays a significant role in the output dynamics of the CNFET-based chaotic circuit. Thus, temperature-related issues should be taken into account while designing a high-quality chaotic generator with high stability.展开更多
Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for...Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid （DNA） hybridization. The Au-gated AIInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current （VDS = 0.5 V） shows a clear decrease of 69μA upon the introduction of 1μmolL^-1 （μM） complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.展开更多
基金Supported by the Basic Science Research Program through the National Research Foundation of Korea Funded by the Ministry of Education,Science and Technology under Grant No 2012-0002777
文摘We evaluate the impact of temperature on the output behavior of a carbon nanotube field effect transistor （CNFET） based chaotic generator. The sources cause the variations in both current-voltage characteristics of the CNFET device and an overall chaotic circuit is pointed out. To verify the effect of temperature variation on the output dynamics of the chaotic circuit, a simulation is performed by employing the CNFET compact model of Wong et al. in HSPICE with a temperature range from -100℃ to 100℃. The obtained results with time series, frequency spectra, and bifurcation diagram from the simulation demonstrate that temperature plays a significant role in the output dynamics of the CNFET-based chaotic circuit. Thus, temperature-related issues should be taken into account while designing a high-quality chaotic generator with high stability.
基金Supported by the National Key Research and Development Program of China under Grant Nos 2016YFB0400104 and2016YFB0400301the National Natural Sciences Foundation of China under Grant No 61334002the National Science and Technology Major Project
文摘Gallium nitride- （GaN） based high electron mobility transistors （HEMTs） provide a good platform for biological detection. In this work, both Au-gated AlInN/GaN HEMT and AlGaN/GaN HEMT biosensors are fabricated for the detection of deoxyribonucleic acid （DNA） hybridization. The Au-gated AIInN/GaN HEMT biosensor exhibits higher sensitivity in comparison with the AlGaN/GaN HEMT biosensor. For the former, the drain-source current （VDS = 0.5 V） shows a clear decrease of 69μA upon the introduction of 1μmolL^-1 （μM） complimentary DNA to the probe DNA at the sensor area, while for the latter it is only 38 μA. This current reduction is a notable indication of the hybridization. The high sensitivity can be attributed to the thinner barrier of the AlInN/GaN heterostructure, which makes the two-dimensional electron gas channel more susceptible to a slight change of the surface charge.
