An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 tool%, respe...An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 tool%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value （α = 12.8）, the lowest breakdown voltage Vlmg （VlmA = 15.8 V/ram） and the highest grain boundary barrier ФB （ФB = 1.48 eV）, which is remarkably superior to the TiO2-V2Os-Y203 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2Os-YEO3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.展开更多
基金Project supported by the National Natural Science Foundation of China(Nos.51262017,51362017)
文摘An investigation was made into the effect of doping with the elemental crystal Ge or/and GeO2 on the TiO2-V2O5-Y2O3 varistor ceramics. The result shows that as the doping contents of V2O5 and Y2O3 are 0.5 tool%, respectively, co-doping with 0.3 mol% Ge and 0.9 mol% GeO2 makes the highest α value （α = 12.8）, the lowest breakdown voltage Vlmg （VlmA = 15.8 V/ram） and the highest grain boundary barrier ФB （ФB = 1.48 eV）, which is remarkably superior to the TiO2-V2Os-Y203 varistor ceramics undoped with Ge and GeO2 and mono-doped with Ge or GeO2. The TiO2-V2Os-YEO3-Ge-GeO2 ceramic has the prospect of becoming a novel varistor ceramic with excellent electrical properties.
