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Single-mode low threshold current multi-hole vertical-cavity surface-emitting lasers 被引量:1
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作者 赵振波 徐晨 +3 位作者 解意洋 周康 刘发 沈光地 《Chinese Physics B》 SCIE EI CAS CSCD 2012年第3期232-235,共4页
A multi-hole vertical-cavity surface-emitting laser (VCSEL) operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-refleetor of... A multi-hole vertical-cavity surface-emitting laser (VCSEL) operating in stable single mode with a low threshold current was produced by introducing multi-leaf scallop holes on the top distributed Bragg-refleetor of an oxidation- confined 850 nm VCSEL. The single-mode output power of 2.6 mW, threshold current of 0.6 mA, full width of half maximum lasing spectrum of less than 0.1 nm, side mode suppression ratio of 28.4 dB, and far-field divergence angle of about 10% are obtained. The effects of different hole depths on the optical characteristics are simulated and analysed, including far-field divergence, spectrum and lateral cavity mode. The single-mode performance of this multi-hole device is attributed to the large radiation loss from the inter hole spacing and the scattering loss at the bottom of the holes, particularly for higher order modes. 展开更多
关键词 single mode low threshold current multi-hole vertical-cavity surlace-emitting laser
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Frequency-locking and threshold current-lowering effects of a quantum cascade laser and an application in gas detection field
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作者 陈伟根 万福 +2 位作者 邹经鑫 顾朝亮 周渠 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第2期165-169,共5页
In this paper,the frequency-locking and threshold current-lowering effects of a quantum cascade laser are studied and achieved.Combined with cavity-enhanced absorption spectroscopy,the noninvasive detection of H_2 wit... In this paper,the frequency-locking and threshold current-lowering effects of a quantum cascade laser are studied and achieved.Combined with cavity-enhanced absorption spectroscopy,the noninvasive detection of H_2 with a prepared concentration of 500 ppm in multiple dissolved gases is performed and evaluated.The high frequency selectivity of 0.0051 cm^-1 at an acquisition time of 1 s allows the sensitive detection of the(1-0) S(l) band of H_2 with a high accuracy of(96.53±0.29)%and shows that the detection limit to an absorption line of 4712.9046 cm^-1 is approximately(17.26±0.63) ppm at an atmospheric pressure and a temperature of 20 ℃. 展开更多
关键词 quantum cascade laser frequency locking threshold current lowering cavity-enhanced absorptionspectroscopy
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Threshold Current Characteristics of Intracavity-contacted Vertical-cavity Surface-emitting Laser
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作者 QUHong-wei GUOXia DONGLi-min DENGJun LIANPeng ZHOUDe-shu SHENGuang-Di 《Semiconductor Photonics and Technology》 CAS 2005年第2期81-84,共4页
Threshold current characteristics of intracavity-contacted oxide-confinedvertical-cavity surface-emitting laser had been investigated in detail. Threshold currentcharacteristics not only were depended on the size of o... Threshold current characteristics of intracavity-contacted oxide-confinedvertical-cavity surface-emitting laser had been investigated in detail. Threshold currentcharacteristics not only were depended on the size of oxide-aperture, but also were also stronglyaffected by the mismatch of its lasing mode and gain peak. For the same degree detuning of the gainpeak and lasing mode at room temperature, the threshold current was approximately proportional tothe square of the oxide-aperture diameter of above 5 μm. For the same oxide-aperture device, thelarger the detuning degree of the lasing mode shifted to the shorter wavelength of the gain peak atroom temperature was, the lower the minimum threshold current was. The wavelengths of the lasingmode and gain peak were ± N X 10 nm detuning at 300 K, The temperature of the minimum thresholdcurrent was changed to be about ± N X 40 K(N real number). The calculated results were consistentwith the experimental ones. 展开更多
关键词 VCSEL threshold current gain peak lasing mode TEMPERATURE
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Development of Surface Grating Distributed Feedback Quantum Cascade Laser for High Output Power and Low Threshold Current Density
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作者 刘颖慧 张锦川 +3 位作者 江建民 孙素娟 李沛旭 刘峰奇 《Chinese Physics Letters》 SCIE CAS CSCD 2015年第2期60-62,共3页
We report on the room-temperature cascade laser (QCL) at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback (DFB) quantum optimization are used to decrease the thre... We report on the room-temperature cascade laser (QCL) at λ -4.7μm. cw operation of a surface grating Both grating design and material distributed feedback (DFB) quantum optimization are used to decrease the threshold current density and to increase the output power. For a high-reflectivity-coated 13-μm-wide and 4- mm-long laser, high wall-plug efficiency of 6% is obtained at 20℃ from a single facet producing over I W of ew output power. The threshold current density of DFB QCL is as low as 1.13kA/cm^2 at 10℃ and 1.34kA/cm2 at 30℃ in cw mode. Stable single-mode emission with a side-mode suppression ratio of about 30 dB is observed in tile working temperature range of 20-50℃. 展开更多
关键词 DFB QCL Development of Surface Grating Distributed Feedback Quantum Cascade Laser for High Output Power and Low threshold current Density
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Two-dimensional models of threshold voltage and subthreshold current for symmetrical double-material double-gate strained Si MOSFETs
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作者 辛艳辉 袁胜 +2 位作者 刘明堂 刘红侠 袁合才 《Chinese Physics B》 SCIE EI CAS CSCD 2016年第3期440-444,共5页
The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal-oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface... The two-dimensional models for symmetrical double-material double-gate (DM-DG) strained Si (s-Si) metal-oxide semiconductor field effect transistors (MOSFETs) are presented. The surface potential and the surface electric field ex- pressions have been obtained by solving Poisson's equation. The models of threshold voltage and subthreshold current are obtained based on the surface potential expression. The surface potential and the surface electric field are compared with those of single-material double-gate (SM-DG) MOSFETs. The effects of different device parameters on the threshold voltage and the subthreshold current are demonstrated. The analytical models give deep insight into the device parameters design. The analytical results obtained from the proposed models show good matching with the simulation results using DESSIS. 展开更多
关键词 double-material double-gate MOSFET strained Si threshold voltage subthreshold current
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Effect of inhomogeneous broadening on threshold current of GaN-based green laser diodes 被引量:3
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作者 Yipeng Liang Jianping Liu +7 位作者 Masao Ikeda Aiqin Tian Renlin Zhou Shuming Zhang Tong Liu Deyao Li Liqun Zhang Hui Yang 《Journal of Semiconductors》 EI CAS CSCD 2019年第5期67-70,共4页
The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold c... The inhomogeneous broadening parameter and the internal loss of green LDs are determined by experiments and theoretical fitting. It is found that the inhomogeneous broadening plays an important role on the threshold current density of green LDs. The green LD with large inhomogeneous broadening even cannot lase. Therefore, reducing inhomogeneous broadening is a key issue to improve the performance of green LDs. 展开更多
关键词 GaN green laser diode INHOMOGENEOUS BROADENING threshold current density
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Influence of the thickness change of the wave-guide layers on the threshold current of GaAs-based laser diode
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作者 庞艺 李翔 赵柏秦 《Journal of Semiconductors》 EI CAS CSCD 2016年第8期72-76,共5页
The paper mainly deals with theoretical investigations of the effect of the thickness change of the wave- guide layers on the threshold current. It is analyzed according to the result of a numerical simulation that as... The paper mainly deals with theoretical investigations of the effect of the thickness change of the wave- guide layers on the threshold current. It is analyzed according to the result of a numerical simulation that asks how does the shift of the active region position affect the threshold current for a single quantum well (SQW) and double quantum well (DQW) laser diode (LD) with a relatively narrow waveguide. It is found that the variation trend of threshold current and optimum position of QW are different in SQW and DQW LD with 0.2 μm-thick waveguide, which may be due to the higher variation rate of optical loss in DQW LD with the shift of the active region. It is also found that in terms of either SQW or DQW LD, the variation tendency of the threshold current with a different loss coefficient of the p-cladding layer makes little difference for the relatively narrow waveguide LD. Moreover, the variation trend of the threshold current and the optimum position of QW is almost the same in SQW and DQW LD with 0.8 μm-thick waveguide, because the optical loss is small enough and the threshold current is dominated by the optical confinement factor (OCF) in QW. 展开更多
关键词 SEMICONDUCTOR laser diode threshold current simulation
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Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current
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作者 Xiao-Wang Fan Jian-Ping Liu +8 位作者 Feng Zhang Masao Ikeda De-Yao Li Shu-Ming Zhang Li-Qun Zhang Ai-Qin Tian Peng-Yan Wen Guo-Hong Ma Hui Yang 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第9期109-111,共3页
Electroluminescence (EL) and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC ... Electroluminescence (EL) and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6kA/cm2 are similar, while LD with threshold current density of 4kA/cm2 exhibits a smaller auger- like recombination rate compared with the one of 6kA/cm2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. temperature-dependent photoluminescence is consistent The internal quantum efficiency value estimated from with EL measurements. 展开更多
关键词 INGAN LD Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on threshold current
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Analytical model for the dispersion of sub-threshold current in organic thin-film transistors
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作者 陈映平 商立伟 +4 位作者 姬濯宇 王宏 韩买兴 刘欣 刘明 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2011年第11期55-59,共5页
This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current (also known as zero-current point dispersion) in organic thin-film transistors. Based on the level 61... This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current (also known as zero-current point dispersion) in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors: large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 g2, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively. 展开更多
关键词 OTFT sub-threshold current level 61 RPI a-Si TFT model equivalent circuit model HSPICE
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Model of Current Threshold for Perception in Testing Electrical Safety Performance 被引量:1
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作者 王晓飞 张朝晖 +2 位作者 李东 刘国忠 赵旭 《Transactions of Tianjin University》 EI CAS 2010年第1期11-16,共6页
A generalized mathematical model of human body current threshold for perception was established and the current flowing through human body could be arbitrary cyclical waveforms.The relationship between human body curr... A generalized mathematical model of human body current threshold for perception was established and the current flowing through human body could be arbitrary cyclical waveforms.The relationship between human body current threshold for perception and current frequency, true root mean square(RMS) value and influence factor was described.A test system was established based on electroencephalogram(EEG) to study the relationship between human body current threshold for perception and current waveform, frequency ... 展开更多
关键词 electrical safety performance leakage current current threshold for perception current waveform electroencephalogram(EEG)
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Quantitative assessment of sensory functions after 3 surgical approaches for trigeminal neuralgia by current perception threshold measurement 被引量:1
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作者 Chen Ruoping Ouyang Huoniu +2 位作者 Wang Bingyu Ding Meixiu Charles J. Hodge Jr 《Journal of Medical Colleges of PLA(China)》 CAS 2008年第5期300-307,共8页
Objective: To quantitatively identify and grade trigeminal sensory functions after 3 major surgical procedures of trigeminal neuralgia using a newly developed quantitative sensory testing technique, current perceptio... Objective: To quantitatively identify and grade trigeminal sensory functions after 3 major surgical procedures of trigeminal neuralgia using a newly developed quantitative sensory testing technique, current perception threshold measurement (CPTM). Methods: In the current study, there were 48 trigeminal neuralgia patients without history of prior surgical treatment. These patients received one of the following 3 surgical procedures, microvascular decompression (MVD), peripheral nerve block with alcohol (PNB), or percutaneous radiofrequency thermocoagulation (PRFT). The quantitative sensory testing measurement, CPTM, and conventional qualitative sensory testing measurements were performed preoperatively and postoperatively to evaluate and grade the trigeminal sensory functions All 3 major cutaneous sensory fiber types, large myelinated fibers (A beta), small myelinated fibers (A delta) and unmyelinated fibers(C) were allowed to quantitatively evaluate and grade by CPTM. The results of the measurements were statistically analyzed using a one-way analysis of variance (single factor). Each subject was his/her own control for comparison of the preoperative to postoperative state on the asymptomatic and symptomatic sides. Subjects were tested 48 h preoperatively and 4 weeks postoperatively. Results: PNB with alcohol and PRFT caused significant sensory dysfunction postoperatively in every fiber type, indicating damage to all fibers. On the contrary, the sensory function in all 3 fiber types was unchanged after MVD management. Conclusion: Among the 3 major surgical procedures tested, only MVD preserves sensory function in trigeminal system. CPTM is of quantitative nature on the evaluation of sensory functions of nerve fibers 展开更多
关键词 Trigeminal neuralgia Sensory dysfunction Microvascular decompression Peripheral nerve block Percutaneous radiofrequency thermocoagulation Quantitative sensory testing current perception threshold measurement
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Very low threshold operation of quantum cascade lasers 被引量:1
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作者 闫方亮 张锦川 +4 位作者 姚丹阳 刘峰奇 王利军 刘峻岐 王占国 《Chinese Physics B》 SCIE EI CAS CSCD 2015年第2期198-201,共4页
A strain-compensated InP-based quantum cascade laser(QCL) structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy(MBE).By optimizing the... A strain-compensated InP-based quantum cascade laser(QCL) structure emitting at 4.6 μm is demonstrated,based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy(MBE).By optimizing the growth parameters,a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated.Threshold current densities as low as 0.47 kA/cm^2 in pulsed operation and 0.56 kA/cm^2 in continuous-wave(cw) operation at 293 K were achieved for this state-of-the-art QCL.A minimum power consumption of 3.65 W was measured for the QCL,uncooled,with a high-reflectivity(HR) coating on its rear facet. 展开更多
关键词 semiconductor laser quantum cascade lasers threshold current density
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变压器差动保护平衡系数的分析
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作者 沈云超 王洪俭 +2 位作者 邹剑锋 费平平 钟乐安 《东北电力技术》 2026年第1期14-18,共5页
差动电流的准确计算关系到变压器差动保护的正确动作,而平衡系数是差动电流计算过程中的关键参数。首先,阐述变压器差动保护的两种实现形式,从而引出用于幅值补偿的平衡系数,并介绍平衡系数的整定计算方法,指出平衡系数的实质和基准侧... 差动电流的准确计算关系到变压器差动保护的正确动作,而平衡系数是差动电流计算过程中的关键参数。首先,阐述变压器差动保护的两种实现形式,从而引出用于幅值补偿的平衡系数,并介绍平衡系数的整定计算方法,指出平衡系数的实质和基准侧选择的意义;其次,结合差动门槛电流的整定原则,分析平衡系数对差动门槛组成项取值的影响;最后,提炼总结有关平衡系数的观点,为变压器差动保护的整定计算与工程实践提供一定参考。 展开更多
关键词 变压器差动保护 平衡系数 差动门槛电流 整定 微机保护
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Comparative Methodical Assessment of Established MOSFET Threshold Voltage Extraction Methods at 10-nm Technology Node 被引量:1
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作者 Yashu Swami Sanjeev Rai 《Circuits and Systems》 2016年第13期4248-4279,共33页
Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value... Threshold voltage (V<sub>TH</sub>) is the most evocative aspect of MOSFET operation. It is the crucial device constraint to model on-off transition characteristics. Precise V<sub>TH</sub> value of the device is extracted and evaluated by several estimation techniques. However, these assessed values of V<sub>TH</sub> diverge from the exact values due to various short channel effects (SCEs) and non-idealities present in the device. Numerous prevalent V<sub>TH</sub> extraction methods are discussed. All the results are verified by extensive 2-D TCAD simulation and confirmed through analytical results at 10-nm technology node. Aim of this research paper is to explore and present a comparative study of largely applied threshold extraction methods for bulk driven nano-MOSFETs especially at 10-nm technology node along with various sub 45-nm technology nodes. Application of the threshold extraction methods to implement noise analysis is briefly presented to infer the most appropriate extraction method at nanometer technology nodes. 展开更多
关键词 threshold Voltage Constant current Source Technique Linear Extrapolation Technique threshold Voltage Estimation Techniques Short Channel Effects Drift Diffusion Model Resistive Load Inverter Noise Margin Analysis
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基于自适应滑模观测器的级联H桥光伏逆变器开路故障诊断方法
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作者 郑征 薄佳林 李斌 《电力系统保护与控制》 北大核心 2025年第20期120-130,共11页
为实现级联H桥(cascaded H-bridge,CHB)光伏并网逆变器单管和双管开路故障诊断,提出了一种基于自适应滑模观测器的开路故障诊断方法。首先基于CHB光伏逆变器混合逻辑动态(mixed logic dynamic,MLD)模型设计自适应滑模观测器,并根据实际... 为实现级联H桥(cascaded H-bridge,CHB)光伏并网逆变器单管和双管开路故障诊断,提出了一种基于自适应滑模观测器的开路故障诊断方法。首先基于CHB光伏逆变器混合逻辑动态(mixed logic dynamic,MLD)模型设计自适应滑模观测器,并根据实际电流和估计电流设计故障检测变量。其次根据直流侧电容电压设计电压阈值进行故障模块定位。然后通过电流残差构造故障定位变量,比较故障状态下自适应滑模观测器的电流残差变化以实现对角管的区分。最后设计前次故障状态下的自适应滑模观测器实现双管开路故障诊断。实验结果表明,所提出的诊断方法可在一个基波周期内准确识别任意位置的单管和双管故障,诊断速度快、鲁棒性强。 展开更多
关键词 级联H桥 自适应滑模观测器 电压阈值 电流残差 故障诊断
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Circle Points Discharge Tube Current Controller
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作者 蒙晋佳 蒙里声 《Plasma Science and Technology》 SCIE EI CAS CSCD 2005年第3期2868-2871,共4页
Circle points discharge tube current controller is a new type device to limit the output of high voltage discharge current. Circle points uniform corona discharge to form air ionization current in the discharge tube. ... Circle points discharge tube current controller is a new type device to limit the output of high voltage discharge current. Circle points uniform corona discharge to form air ionization current in the discharge tube. On the outside, even if the discharge electrode is spark discharging or the two discharge electrodes are short circuited, the air ionization current in the tube remains within a stable range, and there is no spark discharge. In this case, when the discharge current only increases slightly, the requirement to limited current is obtained. By installing the controller at a discharge pole with a small power but high voltage supply, we can realize the shift between the continuous spark line discharge and corona discharge. This provides a new simple device for spark discharge research and is a supplement to the Townsend discharge experiment. 展开更多
关键词 spark line discharge corona discharge discharge current passageway density threshold level of spark discharge
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GaN HFET应力偏置引发的阈值电压移动和电流崩塌
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作者 薛舫时 杨乃彬 +2 位作者 孔月婵 陈堂胜 张凯 《固体电子学研究与进展》 2025年第6期1-10,共10页
利用开尔文探针力显微镜(Kelvin probe force microscopy,KPFM)测得的GaN异质结场效应晶体管(Heterostructure field-effect transistor,HFET)虚栅电势计算了器件从应力偏置转换到测试偏置后不同时刻的实时能带。比较了内、外沟道电场... 利用开尔文探针力显微镜(Kelvin probe force microscopy,KPFM)测得的GaN异质结场效应晶体管(Heterostructure field-effect transistor,HFET)虚栅电势计算了器件从应力偏置转换到测试偏置后不同时刻的实时能带。比较了内、外沟道电场环境变化时产生的不同能带畸变,发现应力偏置漏压逐渐升高超过一个阈值后就会引发巨大虚栅表面势和能带畸变,形成深能带谷、陡能带谷势垒和局域电子气球。正是这一高低陡变的虚栅引发能带畸变,改变了沟道电子气的输运行为,触发了场效应管阈值电压移动和电流崩塌,解释了电流崩塌触发快恢复慢的动态行为。研究了应力偏置和测试偏置改变时深能级瞬态(Deep-level transient spectroscopy,DLTS)谱的变化,用电场环境变化引起的能带畸变解释了陷阱能级随电场变化的难题。深入讨论了GaN HFET内、外沟道的异质结优化设计,提出了用异质结鳍来剪裁内、外沟道能带,抑制电流崩塌的新方案。 展开更多
关键词 虚栅 电流崩塌触发 能带畸变 局域电子气球 能带谷势垒 电流崩塌阈值电压 异质结鳍
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恒定电流条件下滤饼电渗排水行为的试验研究
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作者 姜利国 王振安 +1 位作者 杨启彬 马智敏 《环境工程技术学报》 北大核心 2025年第5期1704-1712,共9页
随着污泥(大量细颗粒土和水组成的软土)产量不断增加,选用适宜的排水方法并明确其排水行为具有现实意义。为提升污泥脱水效率,以商用水洗高岭土为研究对象,通过5组对比试验探究恒定电流条件下电渗法与常规机械排水法的协同作用,并设置... 随着污泥(大量细颗粒土和水组成的软土)产量不断增加,选用适宜的排水方法并明确其排水行为具有现实意义。为提升污泥脱水效率,以商用水洗高岭土为研究对象,通过5组对比试验探究恒定电流条件下电渗法与常规机械排水法的协同作用,并设置常规排水法(仅使用机械压力)作为对照试验。结果表明:联合方法显著提升排水效果,总排水率较单一机械排水提高8.3%~17.5%;通电起始时间越接近过滤-压密阶段的时间阈值点(50 min),排水效率越高;电流密度为2.98 mA/cm^(2)时,可在相同排水量下实现最低能耗(1.45×10^(-3)kW·h/mL)。离散性分析显示各组数据变异系数低于0.025,试验结果可信度高。此外,采用石墨电极与双面排水设计可有效缩短总时长至180 min,并避免电极腐蚀问题。研究为优化电渗-机械联合排水工艺提供了理论依据,兼具高效与节能潜力。 展开更多
关键词 恒定电流 电渗排水 泥浆 过滤常数 时间阈值点
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基于振动和线圈电流信号的低压断路器故障诊断研究 被引量:1
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作者 彭威 张钢 《电工电能新技术》 北大核心 2025年第2期106-115,共10页
为确保低压断路器在供电系统中工作的稳定性和可靠性,提出了一种基于遗传算法(GA)和深度置信网络(DBN)的故障诊断方法。该方法使用多物理域信息的特征作为网络的输入,对低压断路器进行故障诊断。首先,通过传感器采集低压断路器的振动信... 为确保低压断路器在供电系统中工作的稳定性和可靠性,提出了一种基于遗传算法(GA)和深度置信网络(DBN)的故障诊断方法。该方法使用多物理域信息的特征作为网络的输入,对低压断路器进行故障诊断。首先,通过传感器采集低压断路器的振动信号和电流信号,并采用小波软阈值法进行降噪处理,有效避免了传统方法中特征信息的丢失。其次,提取两类信号时域和频域特征形成多物理域信息的特征矩阵,作为后续模型的输入。最后,将多物理域特征矩阵输入DBN神经网络进行网络微调,用GA遗传算法优化DBN网络的权值和阈值,提高故障诊断模型的准确性。实验结果表明,本研究所提模型的诊断精度达到98.46%,相较于仅使用振动信号或电流信号的诊断模型,分别提高了1.49%和6.79%,充分证明了基于多物理域的GA-DBN诊断模型在低压断路器故障诊断中的优异性能。 展开更多
关键词 振动信号 分合闸线圈电流 小波阈值 多物理域特征提取 深度置信网络
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强电磁脉冲下继电保护装置端口的场线耦合特性
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作者 姚丁丁 张卫东 +2 位作者 金龙 周泽昕 周广龙 《强激光与粒子束》 北大核心 2025年第7期113-120,共8页
强电磁脉冲会以场-传输线耦合的方式在线缆上形成纳秒级上升沿的脉冲传导骚扰,对线缆末端的设备构成较大威胁。针对某型号继电保护装置,先测试其抗扰度性能,然后开展场线耦合路径下的高空电磁脉冲辐照试验,获得了装置端口的耦合特性。... 强电磁脉冲会以场-传输线耦合的方式在线缆上形成纳秒级上升沿的脉冲传导骚扰,对线缆末端的设备构成较大威胁。针对某型号继电保护装置,先测试其抗扰度性能,然后开展场线耦合路径下的高空电磁脉冲辐照试验,获得了装置端口的耦合特性。耦合到信号端口的共模电流达32.45 A及以上时引发了该装置的误动作。同时开展了脉冲电流注入试验,注入信号端口的脉冲电流达36.92 A及以上时该装置误动作,进一步确定了装置端口的临界干扰阈值。通过建立变电站内二次电缆和保护屏柜内信号线缆的场线耦合模型,计算了不同场景下高空电磁脉冲产生的耦合量,提出了场线耦合的防护重点。研究结果可为继电保护装置在强电磁脉冲环境下的抗干扰能力评估与防护技术提供参考。 展开更多
关键词 强电磁脉冲 继电保护 场线耦合 阈值特性 电流注入法
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