The effects of long-term moisture changes on the migration,release,and bioavailability of selenium in soil are complex.Due to the lack of effective monitoring methods for precise quantification,its dynamic behavior is...The effects of long-term moisture changes on the migration,release,and bioavailability of selenium in soil are complex.Due to the lack of effective monitoring methods for precise quantification,its dynamic behavior is still unclear.Based on the DGT(Diffusive Gradients in Thin-films)technology,this study sets up three moisture control scenarios:continuous wet,wet-dry alternating,and continuous dry,and carries out a 6-month soil moisture control experiment.In the experiment,the DGT device collected the diffusion gradient data of soil selenium under different scenarios,and analyzed the migration characteristics of selenium in combination with the adsorption isotherm.Meanwhile,the release rate,migration coefficient,and bioavailability parameters of selenium are calculated by fitting the first-order kinetic model,further verifying the reliability and applicability of the DGT data.The experimental results demonstrate that under continuous wet conditions,the release rate of soil selenium reaches 1.85µg·cm^(-2)·h^(-1),with a migration coefficient of 0.012 cm^(2)·h^(-1)and a bioavailability parameter of 0.74;under wet-dry alternating conditions,they are 1.42µg·cm^(-2)·h^(-1),0.01 cm^(2)·h^(-1),and 0.68,respectively;under continuous dry conditions,the release rate of soil selenium is the smallest,at 0.88µg·cm^(-2)·h^(-1),with a migration coefficient of 0.004 cm^(-2)·h^(-1)and a bioavailability parameter of 0.5.The results of this experiment reveal the dynamic behavior of soil selenium under different moisture conditions and reflect the high efficiency of DGT technology in dynamic monitoring and quantitative analysis of soil selenium behavior,providing a scientific basis for the optimal management of rhizosphere soil selenium.展开更多
Electropulsing induced phase transformation and crystal orientation change and their effects on electrical conductivity, THz reflection and surface roughness of thin-films of Al<sub>2</sub>O<sub>3<...Electropulsing induced phase transformation and crystal orientation change and their effects on electrical conductivity, THz reflection and surface roughness of thin-films of Al<sub>2</sub>O<sub>3</sub> (2 wt%) doped ZnO were studied using XRD, SEM, AFM and Thz spectroscopy techniques. AZO-2 thin-films showed an effective response in THz spectroscopy under electropulsing. Electropulsing induced circular preferred crystal orientation changes and phase transformations were observed. The preferred crystal orientation changes accompanying decrease in stress and the secondary phase precipitation favored enhancing conductivity and THz reflection of the AZO-2 thin-films. After adequate electropulsing, both THz reflection and electrical conductivity of the thin-films were enhanced by 22.8% and 6.8%, respectively;meanwhile surface roughness reduced. The property responses of electropulsing are discussed from point view of microstructural change and dislocation dynamics.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
An aqueous solution containing sodium polyacrylate（PAAS） was used in diffusive gradient in thin-films technique（DGT） to measure DGT-labile Ni2＋ concentrations.The DGT devices（PAAS DGT） were validated in four ty...An aqueous solution containing sodium polyacrylate（PAAS） was used in diffusive gradient in thin-films technique（DGT） to measure DGT-labile Ni2＋ concentrations.The DGT devices（PAAS DGT） were validated in four types of solutions,including synthetic river water containing metal ions with complexing EDTA or that without complexing EDTA,natural river water（Ling River,Jinzhou,China） spiked with Ni2＋,and an industrial wastewater （Jinzhou,China）.Results show that only free metal ions were measured by PAAS DGT,recovery=97.36% in the solutions containing only free metal ions,recovery=49.62% in a solution with metal/EDTA molar ratio of 2：1 and recovery=0 in the solutions with metal/EDTA molar ratios of 1：1 and 1：2.These indicated that the complexes of Ni-EDTA were DGT-inert.The DGT performance in spiked river water（recovery=18.24%） and in industrial wastewater（recovery=12.25%） were investigated,which indicated that the measurement of metals by this DGT device did not include the humic substances complexed fractions of metals.The binding properties of PAAS DGT for Ni2＋ were investigated under different conditions of pH value and ionic strength.Conditional stability constants（lgK） of PAAS-Ni complexes were also evaluated.展开更多
A theoretical model is developed for predicting both conduction and diffusion in thin-film ionic conductors or cables. With the linearized Poisson-Nernst-Planck(PNP)theory, the two-dimensional(2D) equations for thin i...A theoretical model is developed for predicting both conduction and diffusion in thin-film ionic conductors or cables. With the linearized Poisson-Nernst-Planck(PNP)theory, the two-dimensional(2D) equations for thin ionic conductor films are obtained from the three-dimensional(3D) equations by power series expansions in the film thickness coordinate, retaining the lower-order equations. The thin-film equations for ionic conductors are combined with similar equations for one thin dielectric film to derive the 2D equations of thin sandwich films composed of a dielectric layer and two ionic conductor layers. A sandwich film in the literature, as an ionic cable, is analyzed as an example of the equations obtained in this paper. The numerical results show the effect of diffusion in addition to the conduction treated in the literature. The obtained theoretical model including both conduction and diffusion phenomena can be used to investigate the performance of ionic-conductor devices with any frequency.展开更多
An enhancement of mid-wavelength infrared absorbance is achieved via a cost-effectively chemical method to bend the flakes by grafting two types of alkane octane(C_(8)H_(18))and dodecane(C_(12)H_(26))onto the surface ...An enhancement of mid-wavelength infrared absorbance is achieved via a cost-effectively chemical method to bend the flakes by grafting two types of alkane octane(C_(8)H_(18))and dodecane(C_(12)H_(26))onto the surface terminals respectively.The chain-length of alkane exceeds the bond-length of surface functionalities T(x=O,-OH,-F)so as to introduce intra-flake and inter-flake strains into Ti_(3)C_(2)T_(x)MXene.The electronic microscopy(TEM/AFM)shows obvious edge-fold and tensile/compressive deformation of flake.The alkane termination increases the intrinsic absorbance of Ti_(3)C_(2)T_(x)MXene from no more than 50%up to more than 99%in the mid-wavelength in⁃frared region from 2.5μm to 4.5μm.Such an absorption enhancement attributes to the reduce of infrared reflec⁃tance of Ti_(3)C_(2)T_(x)MXene.The C-H bond skeleton vibration covers the aforementioned region and partially reduces the surface reflectance.Meanwhile,the flake deformation owing to edge-fold and tensile/compression increases the specific surface area so as to increase the absorption as well.These results have applicable value in the area of mid-infrared camouflage.展开更多
Sm-based perovskite-type oxide (SmMeO3: Me = Cr, Mn, Fe, Co) thin-films could be synthesized by a wet-chemical method using an acetylacetone—Poly(Vinyl Pyrrolidone) (PVP) polymeric precursor method at 750℃. The pero...Sm-based perovskite-type oxide (SmMeO3: Me = Cr, Mn, Fe, Co) thin-films could be synthesized by a wet-chemical method using an acetylacetone—Poly(Vinyl Pyrrolidone) (PVP) polymeric precursor method at 750℃. The perovskite-type oxide thin-films were tried to apply an acetylene gas sensor based on AC impedance spectroscopy. Among the oxides tested, SmFeO3 thin-film sensor showed good sensor responses in which the AC impedance at 20 kHz was depending on acetylene gas concentration between 2 ppm and 80 ppm at 400℃.展开更多
In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured s...In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured structure with both crater-like and pyramid-like), were prepared by three kinds of methods, and the application of these ZnO thin-films as a front electrode in solar cell was studied, respectively. In the first method with negative bias voltage and appropriate sputtering parameters, the textured structure with columnar and polygon on the surface of ZnO thin-film are both existence for the sample prepared by direct magnetron sputtering. Using as a front electrode in solar cell, the photoelectric conversion efficiency Eff of 7.00% was obtained. The second method is that by sputtering on the ZnO:Al self-supporting substrate, and the distribution of pyramid-like was gained. Moreover, the higher (8.25%) photoelectric conversion efficiency of solar cell was got. The last method is that by acid-etching the as-deposited ZnO thin-film which possesses mainly both columnar and polygon structure, and the textured ZnO thin-film with both crater-like and pyramid-like structure was obtained, and the photoelectric conversion efficiency of solar cell is 7.10% when using it as front electrode. These results show that the textured ZnO thin-film prepared on self-supporting substrate is more suitable for using as a front electrode in amorphous silicon cells.展开更多
The rapid proliferation of microelectronics,coupled with the advent of the internet ofthings(IoT)era,has created an urgent demand for miniaturized,integrable,and reliable on-chip energystorage systems.All-solid-state ...The rapid proliferation of microelectronics,coupled with the advent of the internet ofthings(IoT)era,has created an urgent demand for miniaturized,integrable,and reliable on-chip energystorage systems.All-solid-state thin-film microbatteries(TFMBs),distinguished by their intrinsicsafety,compact design,and compatibility with microfabrication techniques,have emerged as promisingcandidates to power next-generation IoT devices.Nevertheless,in contrast to the well-establisheddevelopment of conventional lithium-ion batteries,the advancement of TFMBs remains at an earlystage,facing persistent challenges in materials innovation,interface optimization,and scalable manufacturing.This review critically examines the pivotal role of vapor deposition technologies,includingmagnetron sputtering,pulsed laser deposition,thermal/electron-beam evaporation,chemical vapordeposition,and atomic layer deposition,in the fabrication and performance modulation of TFMBs.We systematically summarize recent progress in thin-film electrodes and solid-state electrolytes,withparticular emphasis on how deposition parameters dictate crystallinity,lattice orientation,and ionictransport in functional layers.Furthermore,we highlight strategies for solid-solid interface engineering,three-dimensional structural design,andmultifunctional integration to enhance capacity retention,cycling stability,and interfacial compatibility.Looking ahead,TFMBs are expectedto evolve toward multifunctional platforms,exhibiting mechanical flexibility,optical transparency,and hybrid energy-harvesting compatibility,thereby meeting the heterogeneous energy requirements of future IoT ecosystems.Overall,this review provides a comprehensive perspective onvapor-phase-enabled TFMB technologies,delivering both theoretical insights and technological guidelines for the scalable realization of highperformancemicroscale power sources.展开更多
Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis ...Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.展开更多
Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by ...Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by tungsten halide lamp. The resistance properties, structure and surface morphology of the thin-films were investigated by four-point probe (FPP) sheet resistance measurement, AFM, SEM-EDS, Alpha-Step IQ Profilers and XRD. The experimental results showed that agglomeration, oxidation and stabilization effects are concurrent. And resistance increasing and decreasing are coexistent after RTA. The formation of high resistance Cu3Si due to inter-diffusion between Cu and Si and more intensive electron scattering resulting from rougher surface caused the sheet resistance to increase abruptly after high temperature RTA.展开更多
We systematically investigated the detection performance of Al nanostrips for single photons at various wavelengths.The Al films were deposited using magnetron sputtering,and the sophisticated nanostructures and morph...We systematically investigated the detection performance of Al nanostrips for single photons at various wavelengths.The Al films were deposited using magnetron sputtering,and the sophisticated nanostructures and morphology of the deposited films were revealed through high-resolution transmission electron microscopy.The fabricated Al meander nanostrips,with a thickness of 4.2 nm and a width of 178 nm,exhibited a superconducting transition temperature of 2.4 K and a critical current of approximately 5μA at 0.85 K.While the Al nanostrips demonstrated a saturated internal quantum efficiency for 405-nm photons,the internal detection efficiency exhibited an exponential dependence on bias current without any saturation tendency for 1550-nm photons.This behavior can be attributed to the relatively large diffusion coefficient and coherence length of the Al films.By further narrowing the nanostrip width,the Al-SNSPDs remain capable of effectively detecting single telecom photons to facilitate practical applications.展开更多
Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homoge...Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.展开更多
Here,a preparation of stable,non-toxic,transparent,high performance zinc oxide thin-film semiconductor via thermal processing of composite system of zinc source solution filled zinc oxide nanoparticles layer was repor...Here,a preparation of stable,non-toxic,transparent,high performance zinc oxide thin-film semiconductor via thermal processing of composite system of zinc source solution filled zinc oxide nanoparticles layer was reported.The zinc oxide nanocrystals synthesized through the thermolysis of Zn-oleate complex in organic solvent medium were first deposited on the ATO/ITO/glass substrate and treated by annealing,then the zinc source solution was deposited on the zinc oxide nanoparticle layer to form precursor thin film by spin-coating process.The thin film transistor with well-controlled and densely packed nanocrystals in zinc oxide semiconductor layer was obtained by thermal annealing the system of precursor film coated ATO/ITO/glass substrate.By optimizing the fabrication conditions,the fabricated thin film transistors exhibited superior field-effect property and carrier mobility property,their saturation mobility reached 2.17 cm^(2)·V^(-1)·s^(-1),which was more than twice as high compared to the transistor devices coated only by zinc oxide nanoparticles.Our method of fabricating zinc oxide thin film transistors was simple,high efficiency,and feasible for the batch production with low cost.展开更多
Thin-film lithium niobate(TFLN)has emerged as a powerful platform for integrated photonics,offering outstanding electro-optic,nonlinear optical,and ferroelectric properties.These unique material characteristics have o...Thin-film lithium niobate(TFLN)has emerged as a powerful platform for integrated photonics,offering outstanding electro-optic,nonlinear optical,and ferroelectric properties.These unique material characteristics have opened new opportunities for developing high-performance photodetectors with broad spectral response,high sensitivity,and compact integration.This review provides a comprehensive overview of recent progress in TFLN-based detectors,focusing on the underlying physical mechanisms and diverse device architectures.We first discuss the spontaneous polarization,bulk photovoltaic effect,and pyroelectric effect and frequency up-conversion in lithium niobate,which enable unconventional lightto-electricity conversion without external bias.Then,we introduce heterogeneously integrated photodetectors that combine TFLN with III-V semiconductors,silicon,and two-dimensional materials,under both free-space illumination and waveguide coupling configurations.We further highlight advances in integrating single-photon detectors on TFLN platforms,a key step toward scalable quantum photonic systems.In addition,we discuss the direct modification strategies such as ferroelectric domain engineering,doping,and ion implantation modification to enhance the photodetection performance of TFLN devices.Finally,we summarize the existing challenges and present perspectives on the future development of multifunctional,low-power,and quantum-compatible photodetectors based on the TFLN platform.展开更多
The energy density of thin-film lithium batteries(TFLBs)is predominantly determined by the average voltage and specific capacity,however,the mechanism of regulating the voltage plateaus of the film electrodes is not w...The energy density of thin-film lithium batteries(TFLBs)is predominantly determined by the average voltage and specific capacity,however,the mechanism of regulating the voltage plateaus of the film electrodes is not well understood.In this study,three boride films(Co–B,Fe–B,and Co–Fe–B alloys)with different thick-nesses were fabricated to enhance the specific capacity and voltage stability of TFLBs.By analyzing the cycling performance,redox peak evolution,and capacitive contribution,the thickness-dependent lithiation behavior of the thin/thick films was elucidated.Theoretical simulations and electrochemical analysis were conducted to investigate how the lithiation behaviors affected the voltage profiles of the film electrodes.In addition,the various-thickness CoB films were compared in all-solid-state TFLBs,demonstrating the universality and practicability of this simple regulation strategy to develop high-performance energy storage devices.展开更多
Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a ...Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a planar integrated highly-reliable metal-ferroelectric-metal-insulator-semiconductor FeTFTs device,in which the weak erase issue is suppressed by implanting a floating gate,and the interface de-fects are reduced by simplifying the fabrication process.These lead to significant improvements in device performance,including large memory window(4.3 V),high conductance dynamic range(1400),high en-durance(10^(12)),and low variation(cycle-to-cycle:2.5%/device-to-device:3.5%).Moreover,we fabricated a 16×16 FeTFTs pseudo-crossbar array for in-memory computing and experimentally demonstrated full hardware implementation of multi-layer perceptron for the classification of four fundamental arithmetic operation symbols.This work provides a potential hardware solution for implementing a highly-efficient in-memory computing system based on highly-reliable FeTFTs array.展开更多
Thin-film lithium niobate(TFLN)possesses great potential because it enables high-speed modulation by voltage,which allows higher resolution and lower power consumption for laser beam scanning than direct laser modulat...Thin-film lithium niobate(TFLN)possesses great potential because it enables high-speed modulation by voltage,which allows higher resolution and lower power consumption for laser beam scanning than direct laser modulation.To achieve these functions,a red,green,and blue(RGB)multiplexer using TFLN is required as an important building block for photonic integrated circuits.We fabricated an RGB multiplexer using TFLN and experimentally confirmed its operation.Three different laser lights of red(λ=638 nm),green(λ=520 nm),and blue(λ=473 nm)were successfully coupled as a single laser beam by an RGB multiplexer composed of multimode interferometers.Furthermore,the TFLN was fabricated by sputter deposition,whereas conventionally,it is fabricated via bulk-lithium niobate adhesion to the substrate.The sputterdeposited TFLN is advantageous for large-volume mass production.展开更多
The development of high-voltage tandem thin-film supercapacitors(TFSCs)has been limited by the issues such as expensive electrode materials,indispensable commercial separators and metal current collectors,and complex ...The development of high-voltage tandem thin-film supercapacitors(TFSCs)has been limited by the issues such as expensive electrode materials,indispensable commercial separators and metal current collectors,and complex manufacturing processes.Herein,we develop a potentially scalable approach to address all these issues by using CO_(2) laser pyrolysis of polyimide(PI)paper into the three-dimensional(3D)morphology of graphene paper in air.The formation process and mechanism of PI to graphene were clarified by microstructure and chemical characterizations and reaction molecular dynamics.The influences of laser scan density,power,defocus,and scan speed on the sheet resistance,longitudinal resistance,Raman spectra,and electrochemical performance of graphene papers were systematically investigated.Results indicate that high-quality graphene papers with ultralow sheet resistance(4.88Ω·square^(-1))and longitudinal resistance(3.46Ω)and extra-large crystalline size(96.1 nm)were achieved under optimized process parameters.The graphene papers can simultaneously serve as active electrode materials,current collectors,and interconnectors.The active area of electrodes is defined by a PI mask,with the help of which a hydrogel electrolyte functions as a separator.The assembled graphene paper-based TFSCs demonstrate outstanding electrochemical performance and mechanical flexibility,with the areal capacitance of 54.5 mF·cm^(-2),energy density of 10.9µWh·cm^(-2),and cycle stability retention of 86.9%over 15000 cycles.Moreover,all the tandem metal-free TFSCs,ranging from 1 to 160 cells,show excellent performance uniformity.The output voltage increases linearly from 1.2 V to 200 V.Significantly,the 160-tandem TFSCs exhibit a high voltage density within a compact volume of∼3.8 cm^(3).This work provides an avenue for achieving tandem metal-free TFSCs in a simple and efficient manner.展开更多
The agitated thin-film evaporator(ATFE)plays a crucial role in evaporation and concentration processes.The design of the scraper for processing high-viscosity non-Newtonian fluids in the ATFE is complex.The intricate ...The agitated thin-film evaporator(ATFE)plays a crucial role in evaporation and concentration processes.The design of the scraper for processing high-viscosity non-Newtonian fluids in the ATFE is complex.The intricate scraping action of the scraper introduces gas into the liquid film,leading to the formation of a gas ring along the wall.This process subsequently reduces wall heat flow,thereby affecting heat transfer.Computational fluid dynamics(CFD)is used to simulate the flow field of the non-Newtonian fluid in the ATFE.The investigation focuses on understanding the mechanism behind the formation of gas rings in the liquid film and proposes methods to prevent their formation.The results demonstrate a transition of the gas from a gas ring suspended in the liquid to a gas ring attached to the wall after entering the liquid film.The scraping action around the circumference of the scraper helps to expel gas rings,indicating the necessity of adjusting the scraper arrangement and increasing the frequency of scraping to enhance gas ring expulsion.The spiral motion of the bow wave serves as the source of gas entry into the liquid film.Therefore,the rotation speed can appropriately increase to reduce the size of the bow wave,thereby inhibiting the formation of the gas ring from the source.This research investigates the mechanism of gas ring generation and expulsion,offering theoretical guidance for processing high-viscosity non-Newtonian materials in the flow field of the ATFE.展开更多
文摘The effects of long-term moisture changes on the migration,release,and bioavailability of selenium in soil are complex.Due to the lack of effective monitoring methods for precise quantification,its dynamic behavior is still unclear.Based on the DGT(Diffusive Gradients in Thin-films)technology,this study sets up three moisture control scenarios:continuous wet,wet-dry alternating,and continuous dry,and carries out a 6-month soil moisture control experiment.In the experiment,the DGT device collected the diffusion gradient data of soil selenium under different scenarios,and analyzed the migration characteristics of selenium in combination with the adsorption isotherm.Meanwhile,the release rate,migration coefficient,and bioavailability parameters of selenium are calculated by fitting the first-order kinetic model,further verifying the reliability and applicability of the DGT data.The experimental results demonstrate that under continuous wet conditions,the release rate of soil selenium reaches 1.85µg·cm^(-2)·h^(-1),with a migration coefficient of 0.012 cm^(2)·h^(-1)and a bioavailability parameter of 0.74;under wet-dry alternating conditions,they are 1.42µg·cm^(-2)·h^(-1),0.01 cm^(2)·h^(-1),and 0.68,respectively;under continuous dry conditions,the release rate of soil selenium is the smallest,at 0.88µg·cm^(-2)·h^(-1),with a migration coefficient of 0.004 cm^(-2)·h^(-1)and a bioavailability parameter of 0.5.The results of this experiment reveal the dynamic behavior of soil selenium under different moisture conditions and reflect the high efficiency of DGT technology in dynamic monitoring and quantitative analysis of soil selenium behavior,providing a scientific basis for the optimal management of rhizosphere soil selenium.
文摘Electropulsing induced phase transformation and crystal orientation change and their effects on electrical conductivity, THz reflection and surface roughness of thin-films of Al<sub>2</sub>O<sub>3</sub> (2 wt%) doped ZnO were studied using XRD, SEM, AFM and Thz spectroscopy techniques. AZO-2 thin-films showed an effective response in THz spectroscopy under electropulsing. Electropulsing induced circular preferred crystal orientation changes and phase transformations were observed. The preferred crystal orientation changes accompanying decrease in stress and the secondary phase precipitation favored enhancing conductivity and THz reflection of the AZO-2 thin-films. After adequate electropulsing, both THz reflection and electrical conductivity of the thin-films were enhanced by 22.8% and 6.8%, respectively;meanwhile surface roughness reduced. The property responses of electropulsing are discussed from point view of microstructural change and dislocation dynamics.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
文摘An aqueous solution containing sodium polyacrylate（PAAS） was used in diffusive gradient in thin-films technique（DGT） to measure DGT-labile Ni2＋ concentrations.The DGT devices（PAAS DGT） were validated in four types of solutions,including synthetic river water containing metal ions with complexing EDTA or that without complexing EDTA,natural river water（Ling River,Jinzhou,China） spiked with Ni2＋,and an industrial wastewater （Jinzhou,China）.Results show that only free metal ions were measured by PAAS DGT,recovery=97.36% in the solutions containing only free metal ions,recovery=49.62% in a solution with metal/EDTA molar ratio of 2：1 and recovery=0 in the solutions with metal/EDTA molar ratios of 1：1 and 1：2.These indicated that the complexes of Ni-EDTA were DGT-inert.The DGT performance in spiked river water（recovery=18.24%） and in industrial wastewater（recovery=12.25%） were investigated,which indicated that the measurement of metals by this DGT device did not include the humic substances complexed fractions of metals.The binding properties of PAAS DGT for Ni2＋ were investigated under different conditions of pH value and ionic strength.Conditional stability constants（lgK） of PAAS-Ni complexes were also evaluated.
基金Project supported by the National Natural Science Foundation of China(Nos.11672265,11202182,and 11621062)the Fundamental Research Funds for the Central Universities(Nos.2016QNA4026 and2016XZZX001-05)the Open Foundation of Zhejiang Provincial Top Key Discipline of Mechanical Engineering
文摘A theoretical model is developed for predicting both conduction and diffusion in thin-film ionic conductors or cables. With the linearized Poisson-Nernst-Planck(PNP)theory, the two-dimensional(2D) equations for thin ionic conductor films are obtained from the three-dimensional(3D) equations by power series expansions in the film thickness coordinate, retaining the lower-order equations. The thin-film equations for ionic conductors are combined with similar equations for one thin dielectric film to derive the 2D equations of thin sandwich films composed of a dielectric layer and two ionic conductor layers. A sandwich film in the literature, as an ionic cable, is analyzed as an example of the equations obtained in this paper. The numerical results show the effect of diffusion in addition to the conduction treated in the literature. The obtained theoretical model including both conduction and diffusion phenomena can be used to investigate the performance of ionic-conductor devices with any frequency.
文摘An enhancement of mid-wavelength infrared absorbance is achieved via a cost-effectively chemical method to bend the flakes by grafting two types of alkane octane(C_(8)H_(18))and dodecane(C_(12)H_(26))onto the surface terminals respectively.The chain-length of alkane exceeds the bond-length of surface functionalities T(x=O,-OH,-F)so as to introduce intra-flake and inter-flake strains into Ti_(3)C_(2)T_(x)MXene.The electronic microscopy(TEM/AFM)shows obvious edge-fold and tensile/compressive deformation of flake.The alkane termination increases the intrinsic absorbance of Ti_(3)C_(2)T_(x)MXene from no more than 50%up to more than 99%in the mid-wavelength in⁃frared region from 2.5μm to 4.5μm.Such an absorption enhancement attributes to the reduce of infrared reflec⁃tance of Ti_(3)C_(2)T_(x)MXene.The C-H bond skeleton vibration covers the aforementioned region and partially reduces the surface reflectance.Meanwhile,the flake deformation owing to edge-fold and tensile/compression increases the specific surface area so as to increase the absorption as well.These results have applicable value in the area of mid-infrared camouflage.
文摘Sm-based perovskite-type oxide (SmMeO3: Me = Cr, Mn, Fe, Co) thin-films could be synthesized by a wet-chemical method using an acetylacetone—Poly(Vinyl Pyrrolidone) (PVP) polymeric precursor method at 750℃. The perovskite-type oxide thin-films were tried to apply an acetylene gas sensor based on AC impedance spectroscopy. Among the oxides tested, SmFeO3 thin-film sensor showed good sensor responses in which the AC impedance at 20 kHz was depending on acetylene gas concentration between 2 ppm and 80 ppm at 400℃.
文摘In this paper, three kinds of textured ZnO thin-films (the first kind has the textured structure with both columnar and polygon, the second posses pyramid-like textured structure only, and the third has the textured structure with both crater-like and pyramid-like), were prepared by three kinds of methods, and the application of these ZnO thin-films as a front electrode in solar cell was studied, respectively. In the first method with negative bias voltage and appropriate sputtering parameters, the textured structure with columnar and polygon on the surface of ZnO thin-film are both existence for the sample prepared by direct magnetron sputtering. Using as a front electrode in solar cell, the photoelectric conversion efficiency Eff of 7.00% was obtained. The second method is that by sputtering on the ZnO:Al self-supporting substrate, and the distribution of pyramid-like was gained. Moreover, the higher (8.25%) photoelectric conversion efficiency of solar cell was got. The last method is that by acid-etching the as-deposited ZnO thin-film which possesses mainly both columnar and polygon structure, and the textured ZnO thin-film with both crater-like and pyramid-like structure was obtained, and the photoelectric conversion efficiency of solar cell is 7.10% when using it as front electrode. These results show that the textured ZnO thin-film prepared on self-supporting substrate is more suitable for using as a front electrode in amorphous silicon cells.
基金supported by the National Key Research and Development Program of China(2023YFA1608800)Guangdong Basic and Applied Basic Research Foundation(2024A1515012385,2024B1515120042)+5 种基金Shenzhen Foundation Research Fund(JCYJ20240813095004006)the National Natural Science Foundation of China(12426301,12275119,52227802)Shenzhen Science and Technology Program(KQTD20200820113047086)Shenzhen Key Laboratory of Solid State Batteries(SYSPG20241211173726011)Guangdong-Hong Kong-Macao Joint Laboratory for Photonic-Thermal-Electrical Energy Materials and Devices(2019B121205001)Guangdong Provincial Key Laboratory of Energy Materials for Electric Power(2018B030322001)。
文摘The rapid proliferation of microelectronics,coupled with the advent of the internet ofthings(IoT)era,has created an urgent demand for miniaturized,integrable,and reliable on-chip energystorage systems.All-solid-state thin-film microbatteries(TFMBs),distinguished by their intrinsicsafety,compact design,and compatibility with microfabrication techniques,have emerged as promisingcandidates to power next-generation IoT devices.Nevertheless,in contrast to the well-establisheddevelopment of conventional lithium-ion batteries,the advancement of TFMBs remains at an earlystage,facing persistent challenges in materials innovation,interface optimization,and scalable manufacturing.This review critically examines the pivotal role of vapor deposition technologies,includingmagnetron sputtering,pulsed laser deposition,thermal/electron-beam evaporation,chemical vapordeposition,and atomic layer deposition,in the fabrication and performance modulation of TFMBs.We systematically summarize recent progress in thin-film electrodes and solid-state electrolytes,withparticular emphasis on how deposition parameters dictate crystallinity,lattice orientation,and ionictransport in functional layers.Furthermore,we highlight strategies for solid-solid interface engineering,three-dimensional structural design,andmultifunctional integration to enhance capacity retention,cycling stability,and interfacial compatibility.Looking ahead,TFMBs are expectedto evolve toward multifunctional platforms,exhibiting mechanical flexibility,optical transparency,and hybrid energy-harvesting compatibility,thereby meeting the heterogeneous energy requirements of future IoT ecosystems.Overall,this review provides a comprehensive perspective onvapor-phase-enabled TFMB technologies,delivering both theoretical insights and technological guidelines for the scalable realization of highperformancemicroscale power sources.
基金funded by the research startup funding of National Research Foundation (NRF) of Korea through the Ministry of Science and ICT 2022R1G1A1009887Part of this study was supported by research start-up funding of Anhui University (S202418001/078)。
文摘Doping in thin-film transistors(TFTs) plays a crucial role in tailoring material properties to enhance device performance, making them essential for advanced electronic applications. This study explores the synthesis and characterization of TFTs fabricated using nickel(Ni)-doped indium oxide(In_(2)O_(3)) via a wet-chemical approach. The presented work investigates the effect of "Ni" incorporation in In_(2)O_(3) on the structural and electrical transport properties of In_(2)O_(3), revealing that higher "Ni" content decreases the oxygen vacancies, leading to a reduction in leakage current and a forward shift in threshold potential(V_(th)).Experimental findings reveal that Ni In O-based TFTs(with Ni = 0.5%) showcase enhanced electrical performance, achieving mobility of 7.54 cm^(2)/(V·s), an impressive ON/OFF current ratio of ~10^(7), a V_(th) of 6.26 V, reduced interfacial trap states(D_(it)) of 8.23 ×10^(12) cm^(-2) and enhanced biased stress stability. The efficacy of "Ni" incorporation is attributed to the upgraded Lewis acidity, stable Ni-O bond strength, and small ionic radius of Ni. Negative bias illumination stability(NBIS) measurements further indicate that device stability diminishes with shorter light wavelengths, likely due to the activation of oxygen vacancies. These findings validate the solution-processed techniques' potential for future large-scale, low-cost, energy-efficient, and high-performance electronics.
基金the National Natural Science Foundation of China (Grant No. 60371046)
文摘Nanoscale Ta-based diffusion barrier thin-films and Cu/barrier/Si multilayer structures were deposited on p-type Si (100) substrates by DC magnetron sputtering. Then the samples were rapidly thermal-annealed (RTA) by tungsten halide lamp. The resistance properties, structure and surface morphology of the thin-films were investigated by four-point probe (FPP) sheet resistance measurement, AFM, SEM-EDS, Alpha-Step IQ Profilers and XRD. The experimental results showed that agglomeration, oxidation and stabilization effects are concurrent. And resistance increasing and decreasing are coexistent after RTA. The formation of high resistance Cu3Si due to inter-diffusion between Cu and Si and more intensive electron scattering resulting from rougher surface caused the sheet resistance to increase abruptly after high temperature RTA.
基金Strategic Priority Research Program(B)of the Chinese Academy of Sciences(XDB0580000)Youth Innovation Promotion Association of the Chinese Academy of Sciences(2021230)+2 种基金Shanghai Science and Technology Development Foundation(21YF1455500)Science and Technology Commission of Shanghai Municipality(2019SHZDZX01)National Natural Science Foundation of China(61801462,61827823,61971408).
文摘We systematically investigated the detection performance of Al nanostrips for single photons at various wavelengths.The Al films were deposited using magnetron sputtering,and the sophisticated nanostructures and morphology of the deposited films were revealed through high-resolution transmission electron microscopy.The fabricated Al meander nanostrips,with a thickness of 4.2 nm and a width of 178 nm,exhibited a superconducting transition temperature of 2.4 K and a critical current of approximately 5μA at 0.85 K.While the Al nanostrips demonstrated a saturated internal quantum efficiency for 405-nm photons,the internal detection efficiency exhibited an exponential dependence on bias current without any saturation tendency for 1550-nm photons.This behavior can be attributed to the relatively large diffusion coefficient and coherence length of the Al films.By further narrowing the nanostrip width,the Al-SNSPDs remain capable of effectively detecting single telecom photons to facilitate practical applications.
基金supported by Zhejiang Provincial Natural Science Foundation of China(No.LZ24E020001).
文摘Complementary inverter is the basic unit for logic circuits,but the inverters based on full oxide thin-film transistors(TFTs)are still very limited.The next challenge is to realize complementary inverters using homogeneous oxide semiconduc-tors.Herein,we propose the design of complementary inverter based on full ZnO TFTs.Li-N dual-doped ZnO(ZnO:(Li,N))acts as the p-type channel and Al-doped ZnO(ZnO:Al)serves as the n-type channel for fabrication of TFTs,and then the complemen-tary inverter is produced with p-and n-type ZnO TFTs.The homogeneous ZnO-based complementary inverter has typical volt-age transfer characteristics with the voltage gain of 13.34 at the supply voltage of 40 V.This work may open the door for the development of oxide complementary inverters for logic circuits.
文摘Here,a preparation of stable,non-toxic,transparent,high performance zinc oxide thin-film semiconductor via thermal processing of composite system of zinc source solution filled zinc oxide nanoparticles layer was reported.The zinc oxide nanocrystals synthesized through the thermolysis of Zn-oleate complex in organic solvent medium were first deposited on the ATO/ITO/glass substrate and treated by annealing,then the zinc source solution was deposited on the zinc oxide nanoparticle layer to form precursor thin film by spin-coating process.The thin film transistor with well-controlled and densely packed nanocrystals in zinc oxide semiconductor layer was obtained by thermal annealing the system of precursor film coated ATO/ITO/glass substrate.By optimizing the fabrication conditions,the fabricated thin film transistors exhibited superior field-effect property and carrier mobility property,their saturation mobility reached 2.17 cm^(2)·V^(-1)·s^(-1),which was more than twice as high compared to the transistor devices coated only by zinc oxide nanoparticles.Our method of fabricating zinc oxide thin film transistors was simple,high efficiency,and feasible for the batch production with low cost.
基金supported by the National Natural Science Foundation of China(No.12235009,12134009)Open fund(SKLMRD-K202522)of the State Key Laboratory of Chemical Reaction Dynamics in DICP,CAS+1 种基金support from Taishan Scholars Program of Shandong Provincesupport from"Qilu Young Scholar Program"of Shandong University,China.
文摘Thin-film lithium niobate(TFLN)has emerged as a powerful platform for integrated photonics,offering outstanding electro-optic,nonlinear optical,and ferroelectric properties.These unique material characteristics have opened new opportunities for developing high-performance photodetectors with broad spectral response,high sensitivity,and compact integration.This review provides a comprehensive overview of recent progress in TFLN-based detectors,focusing on the underlying physical mechanisms and diverse device architectures.We first discuss the spontaneous polarization,bulk photovoltaic effect,and pyroelectric effect and frequency up-conversion in lithium niobate,which enable unconventional lightto-electricity conversion without external bias.Then,we introduce heterogeneously integrated photodetectors that combine TFLN with III-V semiconductors,silicon,and two-dimensional materials,under both free-space illumination and waveguide coupling configurations.We further highlight advances in integrating single-photon detectors on TFLN platforms,a key step toward scalable quantum photonic systems.In addition,we discuss the direct modification strategies such as ferroelectric domain engineering,doping,and ion implantation modification to enhance the photodetection performance of TFLN devices.Finally,we summarize the existing challenges and present perspectives on the future development of multifunctional,low-power,and quantum-compatible photodetectors based on the TFLN platform.
基金supported by National Natural Science Foundation of China(Grant Nos.52101273 and U22A20118)Natural Science Foundation of Fujian Province of China(Grant No.2022J01042)Fundamental Research Funds for Central Universities of China(Grant No.20720242002).
文摘The energy density of thin-film lithium batteries(TFLBs)is predominantly determined by the average voltage and specific capacity,however,the mechanism of regulating the voltage plateaus of the film electrodes is not well understood.In this study,three boride films(Co–B,Fe–B,and Co–Fe–B alloys)with different thick-nesses were fabricated to enhance the specific capacity and voltage stability of TFLBs.By analyzing the cycling performance,redox peak evolution,and capacitive contribution,the thickness-dependent lithiation behavior of the thin/thick films was elucidated.Theoretical simulations and electrochemical analysis were conducted to investigate how the lithiation behaviors affected the voltage profiles of the film electrodes.In addition,the various-thickness CoB films were compared in all-solid-state TFLBs,demonstrating the universality and practicability of this simple regulation strategy to develop high-performance energy storage devices.
基金financially supported by the National Natural Science Foundation of China(Nos.62074166,62104256,62304254,and U23A20322)the Key Research and Development Plan of Hunan Province under Grant(No.2022WK2001).
文摘Ferroelectric thin film transistors(FeTFTs)have attracted great attention for in-memory computing appli-cations due to low power consumption and monolithic three-dimensional integration capability.Herein,we propose a planar integrated highly-reliable metal-ferroelectric-metal-insulator-semiconductor FeTFTs device,in which the weak erase issue is suppressed by implanting a floating gate,and the interface de-fects are reduced by simplifying the fabrication process.These lead to significant improvements in device performance,including large memory window(4.3 V),high conductance dynamic range(1400),high en-durance(10^(12)),and low variation(cycle-to-cycle:2.5%/device-to-device:3.5%).Moreover,we fabricated a 16×16 FeTFTs pseudo-crossbar array for in-memory computing and experimentally demonstrated full hardware implementation of multi-layer perceptron for the classification of four fundamental arithmetic operation symbols.This work provides a potential hardware solution for implementing a highly-efficient in-memory computing system based on highly-reliable FeTFTs array.
文摘Thin-film lithium niobate(TFLN)possesses great potential because it enables high-speed modulation by voltage,which allows higher resolution and lower power consumption for laser beam scanning than direct laser modulation.To achieve these functions,a red,green,and blue(RGB)multiplexer using TFLN is required as an important building block for photonic integrated circuits.We fabricated an RGB multiplexer using TFLN and experimentally confirmed its operation.Three different laser lights of red(λ=638 nm),green(λ=520 nm),and blue(λ=473 nm)were successfully coupled as a single laser beam by an RGB multiplexer composed of multimode interferometers.Furthermore,the TFLN was fabricated by sputter deposition,whereas conventionally,it is fabricated via bulk-lithium niobate adhesion to the substrate.The sputterdeposited TFLN is advantageous for large-volume mass production.
基金funded by the National Natural Science Foundation of China(Grant Nos.52205457 and 52422511)the National Key R&D Program of China(Grant No.2022YFB4701000)+3 种基金the Guangdong Basic and Applied Basic Research Foundation,China(Grant Nos.2024A1515010043,2025A1515010890 and 2022B1515120011)the Young Talent Support Project of Guangzhou Association for Science and Technology(Grant No.QT2024-010)the Guangzhou Basic and Applied Basic Research Foundation(Grant No.SL2024A04J01501)the State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment(Grant No.JMDZ202303).
文摘The development of high-voltage tandem thin-film supercapacitors(TFSCs)has been limited by the issues such as expensive electrode materials,indispensable commercial separators and metal current collectors,and complex manufacturing processes.Herein,we develop a potentially scalable approach to address all these issues by using CO_(2) laser pyrolysis of polyimide(PI)paper into the three-dimensional(3D)morphology of graphene paper in air.The formation process and mechanism of PI to graphene were clarified by microstructure and chemical characterizations and reaction molecular dynamics.The influences of laser scan density,power,defocus,and scan speed on the sheet resistance,longitudinal resistance,Raman spectra,and electrochemical performance of graphene papers were systematically investigated.Results indicate that high-quality graphene papers with ultralow sheet resistance(4.88Ω·square^(-1))and longitudinal resistance(3.46Ω)and extra-large crystalline size(96.1 nm)were achieved under optimized process parameters.The graphene papers can simultaneously serve as active electrode materials,current collectors,and interconnectors.The active area of electrodes is defined by a PI mask,with the help of which a hydrogel electrolyte functions as a separator.The assembled graphene paper-based TFSCs demonstrate outstanding electrochemical performance and mechanical flexibility,with the areal capacitance of 54.5 mF·cm^(-2),energy density of 10.9µWh·cm^(-2),and cycle stability retention of 86.9%over 15000 cycles.Moreover,all the tandem metal-free TFSCs,ranging from 1 to 160 cells,show excellent performance uniformity.The output voltage increases linearly from 1.2 V to 200 V.Significantly,the 160-tandem TFSCs exhibit a high voltage density within a compact volume of∼3.8 cm^(3).This work provides an avenue for achieving tandem metal-free TFSCs in a simple and efficient manner.
基金National Natural Science Foundation of China(No.51905089)Fundamental Research Funds for the Central Universities,China(No.2232020D-31)。
文摘The agitated thin-film evaporator(ATFE)plays a crucial role in evaporation and concentration processes.The design of the scraper for processing high-viscosity non-Newtonian fluids in the ATFE is complex.The intricate scraping action of the scraper introduces gas into the liquid film,leading to the formation of a gas ring along the wall.This process subsequently reduces wall heat flow,thereby affecting heat transfer.Computational fluid dynamics(CFD)is used to simulate the flow field of the non-Newtonian fluid in the ATFE.The investigation focuses on understanding the mechanism behind the formation of gas rings in the liquid film and proposes methods to prevent their formation.The results demonstrate a transition of the gas from a gas ring suspended in the liquid to a gas ring attached to the wall after entering the liquid film.The scraping action around the circumference of the scraper helps to expel gas rings,indicating the necessity of adjusting the scraper arrangement and increasing the frequency of scraping to enhance gas ring expulsion.The spiral motion of the bow wave serves as the source of gas entry into the liquid film.Therefore,the rotation speed can appropriately increase to reduce the size of the bow wave,thereby inhibiting the formation of the gas ring from the source.This research investigates the mechanism of gas ring generation and expulsion,offering theoretical guidance for processing high-viscosity non-Newtonian materials in the flow field of the ATFE.
