The recent discovery of ambient-pressure superconductivity with a critical temperature Tc exceeding 40 K in La_(3)Ni_(2)O_(7) thin films represents a significant advancement in the field of nickelate superconductivity...The recent discovery of ambient-pressure superconductivity with a critical temperature Tc exceeding 40 K in La_(3)Ni_(2)O_(7) thin films represents a significant advancement in the field of nickelate superconductivity.Motivated by recent experimental reports,we investigate an 11-band d–p Hubbard model with tight-binding parameters derived from ab initio calculations,employing large-scale determinant quantum Monte Carlo and cellular dynamical mean-field theory.Our results show that the dominant superexchange couplings in the La_(3)Ni_(2)O_(7) thin films are substantially weaker than those in the bulk material at 29.5 GPa.Specifically,the out-of-plane antiferromagnetic correlation between the Ni-d_(3z^(2)–r^(2)) orbitals is reduced by approximately 27%in the film,whereas the in-plane magnetic correlations remain largely unaffected.We further evaluate the corresponding antiferromagnetic coupling constants,J_(⊥) and J_(||),within a perturbative framework.Regarding charge-transfer properties,we find that biaxial compressive strain in the films reduces the charge-transfer gap.We further resolve the orbital distribution of doped holes and electrons between the IP(Ni-d_(x^(2)–y^(2)) and O-p_(x)/p_(y))and OP(Ni-d_(3z^(2)–r^(2)) and O-p_(z))orbitals,revealing a pronounced particle–hole asymmetry.These findings lay the groundwork for constructing a low-energy t–J model for La_(3)Ni_(2)O_(7) films and provide key insights into the physical distinctions between thin-film and bulk bilayer nickelates.展开更多
This work explores the potential of La_(1-x)Pr_(x)NiO_(4+δ)thin films fabricated by Pulsed Injection Metal-Organic Chemical Vapor Deposition as oxygen electrodes for low-temperature solid oxide cells.La_(1-x)Pr_(x)Ni...This work explores the potential of La_(1-x)Pr_(x)NiO_(4+δ)thin films fabricated by Pulsed Injection Metal-Organic Chemical Vapor Deposition as oxygen electrodes for low-temperature solid oxide cells.La_(1-x)Pr_(x)NiO_(4+δ)materials offer promising mixed ionic and electronic conductivity and high oxygen reduction reaction kinetics.In this study,we focus on the microstructural and electrochemical properties of LaPrNiO_(4+δ)thin films deposited at various temperatures(600-650℃),revealing that a two-temperature deposition process yields nano-architectured films with a dense bottom film and a porous nano-columnar top layer of the same material.Electrochemical impedance spectroscopy and electrical conductivity relaxation experiments demonstrate enhanced surface exchange coefficients compared to bulk LaPrNiO_(4+δ)and La_(2)NiO_(4+δ)and high performance,with polarization resistances as low as 0.10Ωcm^(2) at 600℃ and 1.00 at 500℃.To better understand the electrochemical behavior of these electrodes,we investigated the limiting mechanisms of oxygen reduction by analyzing the kinetic response to varying oxygen partial pressures and performing detailed impedance analyses.These nano-columnar LaPrNiO_(4+δ)oxygen electrodes were also deposited on commercial half-cells,enabling the resulting full cells to operate successfully in both reversible solid oxide fuel cell and electrolysis cell modes,reaching a performance of 0.34 W cm^(-2) at 600℃ in reversible solid oxide fuel cell mode.This work underscores the promise of LaPrNiO_(4+δ)thin films for efficient low-temperature-solid oxide cells while addressing challenges in durability and stability.展开更多
BiMeO_(3)–PbTiO_(3)(where Me represents transition metals)perovskite-type thin films have been widely studied due to their superior ferroelectric properties,including robust ferroelectric polarization and high Curie ...BiMeO_(3)–PbTiO_(3)(where Me represents transition metals)perovskite-type thin films have been widely studied due to their superior ferroelectric properties,including robust ferroelectric polarization and high Curie temperatures.In this study,PbTiO_(3)-based perovskite thin films of xBi(Cu_(1/2)Zr_(1/2))O_(3)–(1-x)PbTiO_(3)(xBCZ–(1-x)PT)were designed and prepared on Pt(111)/Ti/SiO_(2)/Si substrates using the conventional sol–gel method.The x BCZ–(1-x)PT thin films demonstrate remarkable crystallinity,characterized by a perovskite structure and a dense microstructure,which contribute to their highperformance ferroelectric and fatigue properties.Notably,the thin films exhibit large remnant polarization(2P_(r0))values,reaching 98μC·cm^(-2)and 74μC·cm^(-2)for the 0.05BCZ–0.95PT and 0.1BCZ–0.9PT compositions,respectively.Furthermore,the thin films also demonstrate a high Curie temperature(T_(C)=510℃),as well as favorable fatigue properties and low leakage current,suggesting their potential applicability in ferroelectric devices.展开更多
Ising superconductivity has garnered much attention in recent years due to its extremely high in-plane upper critical field (B_(c2)).Here,we fabricated 14 multilayer Pb_(1-x)Bi_(x) (0%≤x≤40%) thin films on Si (111)-...Ising superconductivity has garnered much attention in recent years due to its extremely high in-plane upper critical field (B_(c2)).Here,we fabricated 14 multilayer Pb_(1-x)Bi_(x) (0%≤x≤40%) thin films on Si (111)-7×7 reconstructed surface by molecular beam epitaxy.Large B_(c2) beyond the Pauli limit is observed in all the Pb_(1-x)Bi_(x) films,indicating that they may exhibit characteristics of Ising superconductivity.Moreover,the introduction of Bi doping can significantly enhance and effectively tune the in-plane B_(c2) of Pb_(1-x)Bi_(x) films,which will help us better understand Ising superconductivity and provide a new platform for the development of tunable Ising superconductors.展开更多
Tetravalent tin(Sn^(4+))-based inorganic perovskite semiconductors like Cs_(2)SnI_(6)are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendli...Tetravalent tin(Sn^(4+))-based inorganic perovskite semiconductors like Cs_(2)SnI_(6)are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendliness.In this paper,we reported the dopant compensation effect in the component-dependent self-doped(111)-oriented Cs_(2)SnI_(6)thin films grown with pulsed laser deposition(PLD)at room temperature.The films were grown on(100)-SrTiO_(3)(STO)substrates at room temperature by PLD.Hall results of the Cs_(2)SnI_(6)films with different components realizing by controlling the ratio of SnI_(4)/CsI in the targets demonstrate a clear change of conductivity type from N-type to P-type,while the carrier concentration decreases from 1018 to 1013 and accordingly the film resistivity increases significantly from 3.8 to 2506Ωcm.The defect-relatedopticalfingerprints of Cs_(2)SnI_(6)films werealsoinvestigated withtemperature-dependent photoluminescence spectroscopy.At low temperatures of 10 K,the Cs_(2)SnI_(6)films exhibit donor-bound(D^(0)X)and donor-acceptor pair(DAP)emission,respectively,due to the self-doping effect.These re-sults indicate that controlling the composition of the PLD target is a powerful way to tune the electrical properties of Cs_(2)SnI_(6)films for possible applications in solar cells or X-ray detectors.展开更多
FeCoCrMnNiN_(x)high entropy nitride ceramics thin films were prepared using the magnetron sputtering method,and the effects of nitrogen content on the thin films’properties were later examined.The addition of N_(2)af...FeCoCrMnNiN_(x)high entropy nitride ceramics thin films were prepared using the magnetron sputtering method,and the effects of nitrogen content on the thin films’properties were later examined.The addition of N_(2)affected the microstructures of the thin films and their mechanical and corrosion properties.Compared with the FeCoCrMnNi thin films with 1-sccm N_(2),the addition of 2 and 3 sccm of N_(2)by as much as 5.45at%and 6.34at%changed the solid solution’s crystalline structure into an amorphous structure.The addition of nitro-gen caused drastic changes to the surface morphology,creating a smoother and more uniform surface without cauliflower units.The atomic force microscopy image analysis indicated that the addition of nitrogen reduced the surface roughness from 5.58 to 1.82 nm.Adding N_(2)to the CoCrFeMnNi thin film helped increase its mechanical properties,such as hardness and strength,while the Young’s modulus decreased.The hardness of(8.75±0.5)GPa and the reduced Young’s modulus of(257.37±11.4)GPa of the FeCoCrMnNi thin film reached(12.67±1.2)and(194.39±12.4)GPa,respectively,with 1 sccm N_(2).The applied coating of the CoCrFeMnNi thin film on 304SUS increased the corrosion resistance,whereas the addition of nitrogen to the CoCrFeMnNi thin film also improved its corrosion res-istance compared with that of the CoCrFeMnNi thin film without nitrogen.展开更多
The discovery of high-temperature superconductivity in bilayer nickelate La_(3)Ni_(2)O_(7)under high-pressure conditions has spurred extensive efforts to stabilize superconductivity at ambient pressure.Recently,the re...The discovery of high-temperature superconductivity in bilayer nickelate La_(3)Ni_(2)O_(7)under high-pressure conditions has spurred extensive efforts to stabilize superconductivity at ambient pressure.Recently,the realization of superconductivity in compressively strained La_(3)Ni_(2)O_(7)thin films grown on the SrLaAlO_(4)substrates,with a T_(c)exceeding 40 K,represents a significant step toward this goal.Here,we investigate the influence of film thickness and carrier doping on the electronic structure of La_(3)Ni_(2)O_(7)thin films,ranging from 0.5 to 3 unit cells,using first-principles calculations.For a 2 unit-cell film with an optimal doping concentration of 0.3 hole per formula unit(0.15 hole/Ni),the Ni-d_(z^(2))interlayer bonding state crosses the Fermi level,resulting in the formation ofγpockets at the Fermi surface.These findings align with angle-resolved photoemission spectroscopy experimental data.Our results provide theoretical validation for the recent experimental discovery of ambient-pressure superconductivity in La_(3)Ni_(2)O_(7)thin films and underscore the significant impact of film thickness and carrier doping on electronic property modulation.展开更多
Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical...Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical”compressive pressure through cation substitution is still limited.Here,we address this issue in the La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,1.5,2.0,and 2.5)thin film samples.It was found that using Nd3+with a smaller radius instead of La3+can reduce the c-axis lattice constant and shift the metal-insulator transition(MIT)temperature TMIT.To probe the origin of the MIT at cryogenic temperatures,experimental measurements of magnetoresistance were conducted,and theoretical analysis was carried out using the Kondo model,Hikami-Larkin-Nagaoka equation,and other methods.The results indicate that as Nd doping rises,the contributions of the Kondo effect and two-dimensional weak localization(WL)first decrease and then increase.The total contribution of WL and the Kondo effect in the mid-doped La_(1.5)Nd_(1.5)Ni_(2)O_(7)sample was the smallest,which to some extent explains the changes in TMIT.The Kondo effect dominates in other La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,2.0,and 2.5)samples.This work demonstrates that cation doping has a significant impact on bilayer nickelates,providing experimental evidence for understanding the physical mechanism of the MIT in bilayer nickelates.展开更多
Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet response.In order to obtain photodet...Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet response.In order to obtain photodetectors(PDs)with superior response,higher demands are placed on the quality of growth and processing of doped films.In this work,Zn-doped ternary metal oxide ZnGaO(ZGO)thin films were grown using the atomic layer deposition technique and annealed at different temperatures under an oxy-gen atmosphere.The results showed that the high-quality ZGO films with good uniformity,high visible light transmittance,low roughness,and significant reduction of oxygen vacancies were obtained after an-nealing.Subsequently,metal-semiconductor-metal PDs were prepared based on the studied ZGO films.The responsivity(R),detectivity(D^(∗)),and external quantum efficiency(EQE)of the optimized device are 61.8 A W^(-1),1.2×10^(12) Jones,and 255.9%,respectively.Compared to the unannealed device,the an-nealed ZGO PD achieves a maximum 309-fold increase in responsivity.This thermal engineering work may provide a strong reference for the development of low-cost,large-area,high-performance ultraviolet detection.And it also broadens the application of ternary metal oxides in optoelectronics.展开更多
When a perpendicular magnetic field penetrates a thin slab of a type-Ⅱ superconductor it produces vortices,with one vortex per flux quantum,h/2e.The vortices interact repulsively and form an ordered array(Abrikosov l...When a perpendicular magnetic field penetrates a thin slab of a type-Ⅱ superconductor it produces vortices,with one vortex per flux quantum,h/2e.The vortices interact repulsively and form an ordered array(Abrikosov lattice)in clean systems,while strong disorder changes the lattice into a vortex glass.The collective vortex dynamics is extremely vulnerable to external perturbations.Consequently,although of great importance,experimental observation is limited.Here we investigate type-Ⅱ superconducting films(PdBi_(2)and NbSe_(2))with surface acoustic waves(SAWs)at mK temperature.When sweeping the magnetic field at an extremely slow rate,we observe a series of spikes in the attenuation and velocity of the SAW,on average separated in field by approximately Hc1.We propose the following scenario:The vortex-free region at the edges of the film produces an edge barrier across which the vortices can enter or leave.When the applied field changes,the induced supercurrents flowing along this edge region lowers this barrier until there is an instability.At that point,vortices avalanche into(or out of)the bulk and change the vortex crystal,suggested by the sharp jump in each such spike.The vortices then gradually relax to a new stable pinned configuration,leading to a~30 s relaxation after the jump.Our observation enriches the limited experimental evidence on the important topic of real-time vortex dynamics in superconductors.展开更多
By doping with Mg atoms,the bandgap of Mg-doped NiO thin films can be adjusted larger.By using NiO and MgO as sputtering targets,Mg-doped NiO thin films were deposited using radio-frequency magnetron co-sputtering met...By doping with Mg atoms,the bandgap of Mg-doped NiO thin films can be adjusted larger.By using NiO and MgO as sputtering targets,Mg-doped NiO thin films were deposited using radio-frequency magnetron co-sputtering method in pure argon and pure oxygen gas,respectively.The crystal structure,morphological characteristics,composition and optical properties of the obtained films were compared by X-ray diffraction(XRD),scanning electron microscope(SEM),energy dispersive spectrometer(EDS)and ultraviolet(UV)-visible spectrophotometer.The properties of the thin films deposited in different sputtering gases are quite different.For the films deposited in pure argon gas,it is a polycrystalline thin film with(200)preferred orientation,while the film deposited in pure oxygen has no preferred orientation.The grain size,molar ratio of Mg to Ni atoms and optical bandgap are larger for the films deposited in pure argon gas than those deposited in oxygen gas.展开更多
T-carbon is a new allotrope of carbon materials,and it displays high hardness and low density.Nevertheless,the hardening mechanisms of T-carbon thin films under nanoindentation remain elusive.This work utilizes molecu...T-carbon is a new allotrope of carbon materials,and it displays high hardness and low density.Nevertheless,the hardening mechanisms of T-carbon thin films under nanoindentation remain elusive.This work utilizes molecular dynamics simulation to explore the hardening mechanisms of T-carbon thin films under nanoindentation with variations of loading velocities and temperatures.The results reveal that a loading velocity increase at a given temperature raises the nanoindentation force.The increase in nanoindentation force is due to graphitization,which is related to the fracture of tetrahedral structures in T-carbon thin films.However,increased graphitization caused by an increased temperature lowers the nanoindentation force at a given loading velocity.The increased graphitization is influenced by both the fractured tetrahedrons and the deformation of inter-tetrahedron bond angles.This is attributed to the loss of thermal stability and the lower density of T-carbon thin films as the temperature increases.These findings have significant implications for the design of nanodevices for specific application requirements.展开更多
In antiferromagnets,dipolar coupling is often disregarded due to the cancellation of magnetic moments between the two sublattices,so that the spin-wave dispersion is predominantly determined by exchange interactions.H...In antiferromagnets,dipolar coupling is often disregarded due to the cancellation of magnetic moments between the two sublattices,so that the spin-wave dispersion is predominantly determined by exchange interactions.However,antiferromagnetic spin waves typically involve a slight misalignment of the magnetic moments on the sublattices,which gives rise to a small net magnetization enabling long-range dipolar coupling.In this paper,we investigate the role of dipolar coupling in spin-wave excitations and its influence on the resulting dispersion.Our findings show that:(i)when the Néel vector is perpendicular to the film plane or lies within the film plane and parallel to the wave vector,the dispersion branches can be divided into two groups:those unaffected by the dipolar field and those influenced by it.In these cases,the total magnetic moment remains linearly polarized,but the polarization directions differ between the two types of branches;(ii)when the Néel vector lies in the film plane and is perpendicular to the wave vector,the dipolar interactions affect both types of dispersion branches,leading to their hybridization.This hybridization alters the polarization of the magnetic moment,resulting in elliptical polarization.展开更多
Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and op...Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and optimizing the performance of semiconductor materials,as it directly influences charge carrier dynamics and overall device efficiency.This work presents a development of PbS thin film deposited by thermal evaporation,at which the PbS thin film was further employed for structural,optical properties,andτ.Especially,the PbS film is probed with an in-house setup for identifying theτ.The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency.The derivedτin the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence.Therefore,the in-house setup provides additional tools for identifying theτvalues for semiconductor devices.展开更多
CoNiFe,CoNiFeB and CoNiFeP soft magnetic thin films were prepared by cyclic voltammetry method.The morphologies,composition and structures were characterized by scanning electron microscope（SEM）,energy-dispersive X-...CoNiFe,CoNiFeB and CoNiFeP soft magnetic thin films were prepared by cyclic voltammetry method.The morphologies,composition and structures were characterized by scanning electron microscope（SEM）,energy-dispersive X-ray spectroscope（EDS） and X-ray diffractometer（XRD）.The soft magnetic properties were investigated through vibrating sample magnetometer（VSM）.The corrosion resistance was investigated through Tafel polarization and electrochemical impedance spectroscopic（EIS）.The results show that all the electrodeposited CoNiFe,CoNiFeB and CoNiFeP films are mixtures of crystalline and amorphous phases,and high amount of boron/phosphorus-containing additives favors the formation of amorphous state.Nanostructure is obtained in CoNiFe and CoNiFeB films.The inclusion of boron causes the film more dense and also increases its corrosion resistance.Meanwhile,the inclusion of boron lowers its coercivity（Hc） from 851.48 A/m to 604.79 A/m,but the saturation magnetic flux density（Bs） is almost unchanged.However,the addition of phosphorus greatly increases the film particle size and decreases its corrosion stability.The coercivity（Hc） of CoNiFeP film is also highly increased to 12485.79 A/m,and its saturation magnetic flux density（Bs） is greatly decreased to 1.25 T.展开更多
Copper （Cu） doped beryllium （Be） thin films were deposited on silicon substrates by using a simple ion beam sputtering method, which can also realize the varying of Cu doping concentration. Detailed morphological ...Copper （Cu） doped beryllium （Be） thin films were deposited on silicon substrates by using a simple ion beam sputtering method, which can also realize the varying of Cu doping concentration. Detailed morphological and structural characterizations of the samples clearly disclose a microstructure evolution of films upon doping Cu. Doping Cu can effectively suppress film grain growth, causing a small grain size as well as uniform size distribution. Furthermore, doping Cu affects the crystallographic texture of film, which leads to the formation of more compact film structure. In particular, the surface smoothness of the doped films is significantly improved, which makes them promising candidates for various applications.展开更多
Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation ...Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation frequency or working pressure,but increase firstly and then decrease with the increase of plasma power density.Raman spectra show that the crystallinity and the average grain sizes of the films strongly depend on the temperature of substrate and the concentration of silane.However,the plasma excitation frequency only has effect on the crystallinity,and a maximum occurs during the further increase of plasma excitation frequency.From XRD and TEM experiments,three preferential crystalline orientations (111),(220) and (311) are observed,and the average grain sizes are different for every crystalline orientation.展开更多
The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO（001） substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the p...The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO（001） substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TIN（002） peak shifts toward low angle direction and TiN（111） peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.展开更多
The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were...The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.展开更多
FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin...FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.展开更多
基金supported by the National Natural Science Foundation of China (Grant Nos.12494591,12494594,and 92565303)the National Key R&D Program of China (Grant No.2022YFA1402802)+2 种基金the Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices (Grant No.2022B1212010008)the Research Center for Magnetoelectric Physics of Guangdong Province (Grant No.2024B0303390001)the Guangdong Provincial Quantum Science Strategic Initiative (Grant No.GDZX2401010)。
文摘The recent discovery of ambient-pressure superconductivity with a critical temperature Tc exceeding 40 K in La_(3)Ni_(2)O_(7) thin films represents a significant advancement in the field of nickelate superconductivity.Motivated by recent experimental reports,we investigate an 11-band d–p Hubbard model with tight-binding parameters derived from ab initio calculations,employing large-scale determinant quantum Monte Carlo and cellular dynamical mean-field theory.Our results show that the dominant superexchange couplings in the La_(3)Ni_(2)O_(7) thin films are substantially weaker than those in the bulk material at 29.5 GPa.Specifically,the out-of-plane antiferromagnetic correlation between the Ni-d_(3z^(2)–r^(2)) orbitals is reduced by approximately 27%in the film,whereas the in-plane magnetic correlations remain largely unaffected.We further evaluate the corresponding antiferromagnetic coupling constants,J_(⊥) and J_(||),within a perturbative framework.Regarding charge-transfer properties,we find that biaxial compressive strain in the films reduces the charge-transfer gap.We further resolve the orbital distribution of doped holes and electrons between the IP(Ni-d_(x^(2)–y^(2)) and O-p_(x)/p_(y))and OP(Ni-d_(3z^(2)–r^(2)) and O-p_(z))orbitals,revealing a pronounced particle–hole asymmetry.These findings lay the groundwork for constructing a low-energy t–J model for La_(3)Ni_(2)O_(7) films and provide key insights into the physical distinctions between thin-film and bulk bilayer nickelates.
基金funded by the European Union's Horizon 2020 research and innovation program under grant agreements no.824072(Harvestore project)no.101017709(EPISTORE)by the Centre of Excellence of Multifunctional Architectured Materials“CEMAM”no.ANR-10-LABX-44-01 as part of the“Investments for the Future”Program.
文摘This work explores the potential of La_(1-x)Pr_(x)NiO_(4+δ)thin films fabricated by Pulsed Injection Metal-Organic Chemical Vapor Deposition as oxygen electrodes for low-temperature solid oxide cells.La_(1-x)Pr_(x)NiO_(4+δ)materials offer promising mixed ionic and electronic conductivity and high oxygen reduction reaction kinetics.In this study,we focus on the microstructural and electrochemical properties of LaPrNiO_(4+δ)thin films deposited at various temperatures(600-650℃),revealing that a two-temperature deposition process yields nano-architectured films with a dense bottom film and a porous nano-columnar top layer of the same material.Electrochemical impedance spectroscopy and electrical conductivity relaxation experiments demonstrate enhanced surface exchange coefficients compared to bulk LaPrNiO_(4+δ)and La_(2)NiO_(4+δ)and high performance,with polarization resistances as low as 0.10Ωcm^(2) at 600℃ and 1.00 at 500℃.To better understand the electrochemical behavior of these electrodes,we investigated the limiting mechanisms of oxygen reduction by analyzing the kinetic response to varying oxygen partial pressures and performing detailed impedance analyses.These nano-columnar LaPrNiO_(4+δ)oxygen electrodes were also deposited on commercial half-cells,enabling the resulting full cells to operate successfully in both reversible solid oxide fuel cell and electrolysis cell modes,reaching a performance of 0.34 W cm^(-2) at 600℃ in reversible solid oxide fuel cell mode.This work underscores the promise of LaPrNiO_(4+δ)thin films for efficient low-temperature-solid oxide cells while addressing challenges in durability and stability.
基金Project supported by the National Key Research and Development Program of China(Grant No.2021YFA1400300)the National Natural Science Foundation of China(Grant Nos.22271309,12304268,12261131499,and 11921004)the China Postdoctoral Science Foundation(Grant No.2023M743741)。
文摘BiMeO_(3)–PbTiO_(3)(where Me represents transition metals)perovskite-type thin films have been widely studied due to their superior ferroelectric properties,including robust ferroelectric polarization and high Curie temperatures.In this study,PbTiO_(3)-based perovskite thin films of xBi(Cu_(1/2)Zr_(1/2))O_(3)–(1-x)PbTiO_(3)(xBCZ–(1-x)PT)were designed and prepared on Pt(111)/Ti/SiO_(2)/Si substrates using the conventional sol–gel method.The x BCZ–(1-x)PT thin films demonstrate remarkable crystallinity,characterized by a perovskite structure and a dense microstructure,which contribute to their highperformance ferroelectric and fatigue properties.Notably,the thin films exhibit large remnant polarization(2P_(r0))values,reaching 98μC·cm^(-2)and 74μC·cm^(-2)for the 0.05BCZ–0.95PT and 0.1BCZ–0.9PT compositions,respectively.Furthermore,the thin films also demonstrate a high Curie temperature(T_(C)=510℃),as well as favorable fatigue properties and low leakage current,suggesting their potential applicability in ferroelectric devices.
基金supported by the National Natural Science Foundation of China (Grant Nos. 12374196, 92165201, and 11634011)the Innovation Program for Quantum Science and Technology (Grant No. 2021ZD0302800)+2 种基金the Chinese Academy of Sciences Project for Young Scientists in Basic Research (Grant No. YSBR-046)the Fundamental Research Funds for the Central Universities (Grant Nos. WK3510000006 and WK3430000003)Anhui Initiative in Quantum Information Technologies (Grant No. AHY170000)。
文摘Ising superconductivity has garnered much attention in recent years due to its extremely high in-plane upper critical field (B_(c2)).Here,we fabricated 14 multilayer Pb_(1-x)Bi_(x) (0%≤x≤40%) thin films on Si (111)-7×7 reconstructed surface by molecular beam epitaxy.Large B_(c2) beyond the Pauli limit is observed in all the Pb_(1-x)Bi_(x) films,indicating that they may exhibit characteristics of Ising superconductivity.Moreover,the introduction of Bi doping can significantly enhance and effectively tune the in-plane B_(c2) of Pb_(1-x)Bi_(x) films,which will help us better understand Ising superconductivity and provide a new platform for the development of tunable Ising superconductors.
基金financially supported by the National Key Re-search and Development Program of China(No.2022YFC3700801)the Key R&D Program of Shandong Province,China(No.2024SFGC0102),the Jinan Bureau of Education(No.JNSX2023015)the Jinan Bureau of Science and Technology(No.202333042).
文摘Tetravalent tin(Sn^(4+))-based inorganic perovskite semiconductors like Cs_(2)SnI_(6)are expected to replace lead-based perovskite counterparts due to advantages such as structural stability and environmental friendliness.In this paper,we reported the dopant compensation effect in the component-dependent self-doped(111)-oriented Cs_(2)SnI_(6)thin films grown with pulsed laser deposition(PLD)at room temperature.The films were grown on(100)-SrTiO_(3)(STO)substrates at room temperature by PLD.Hall results of the Cs_(2)SnI_(6)films with different components realizing by controlling the ratio of SnI_(4)/CsI in the targets demonstrate a clear change of conductivity type from N-type to P-type,while the carrier concentration decreases from 1018 to 1013 and accordingly the film resistivity increases significantly from 3.8 to 2506Ωcm.The defect-relatedopticalfingerprints of Cs_(2)SnI_(6)films werealsoinvestigated withtemperature-dependent photoluminescence spectroscopy.At low temperatures of 10 K,the Cs_(2)SnI_(6)films exhibit donor-bound(D^(0)X)and donor-acceptor pair(DAP)emission,respectively,due to the self-doping effect.These re-sults indicate that controlling the composition of the PLD target is a powerful way to tune the electrical properties of Cs_(2)SnI_(6)films for possible applications in solar cells or X-ray detectors.
基金the Ahvaz Branch, Islamic Azad University for the financial support
文摘FeCoCrMnNiN_(x)high entropy nitride ceramics thin films were prepared using the magnetron sputtering method,and the effects of nitrogen content on the thin films’properties were later examined.The addition of N_(2)affected the microstructures of the thin films and their mechanical and corrosion properties.Compared with the FeCoCrMnNi thin films with 1-sccm N_(2),the addition of 2 and 3 sccm of N_(2)by as much as 5.45at%and 6.34at%changed the solid solution’s crystalline structure into an amorphous structure.The addition of nitro-gen caused drastic changes to the surface morphology,creating a smoother and more uniform surface without cauliflower units.The atomic force microscopy image analysis indicated that the addition of nitrogen reduced the surface roughness from 5.58 to 1.82 nm.Adding N_(2)to the CoCrFeMnNi thin film helped increase its mechanical properties,such as hardness and strength,while the Young’s modulus decreased.The hardness of(8.75±0.5)GPa and the reduced Young’s modulus of(257.37±11.4)GPa of the FeCoCrMnNi thin film reached(12.67±1.2)and(194.39±12.4)GPa,respectively,with 1 sccm N_(2).The applied coating of the CoCrFeMnNi thin film on 304SUS increased the corrosion resistance,whereas the addition of nitrogen to the CoCrFeMnNi thin film also improved its corrosion res-istance compared with that of the CoCrFeMnNi thin film without nitrogen.
基金supported by the National Key R&D Program of China(Gran Nos.2022YFA1402304 and 2022YFA1402802)the National Natural Science Foundation of China(Grant Nos.12494591,12122405,12274169,and 92165204)+4 种基金Program for Science and Technology Innovation Team in Zhejiang(Grant No.2021R01004)Guangdong Provincial Key Laboratory of Magnetoelectric Physics and Devices(Grant No.2022B1212010008)Guangdong Fundamental Research Center for Magnetoelectric Physics(2024B0303390001)Guangdong Provincial Quantum Science Strategic Initiative(Grant No.GDZX2401010)the Fundamental Research Funds for the Central Universities。
文摘The discovery of high-temperature superconductivity in bilayer nickelate La_(3)Ni_(2)O_(7)under high-pressure conditions has spurred extensive efforts to stabilize superconductivity at ambient pressure.Recently,the realization of superconductivity in compressively strained La_(3)Ni_(2)O_(7)thin films grown on the SrLaAlO_(4)substrates,with a T_(c)exceeding 40 K,represents a significant step toward this goal.Here,we investigate the influence of film thickness and carrier doping on the electronic structure of La_(3)Ni_(2)O_(7)thin films,ranging from 0.5 to 3 unit cells,using first-principles calculations.For a 2 unit-cell film with an optimal doping concentration of 0.3 hole per formula unit(0.15 hole/Ni),the Ni-d_(z^(2))interlayer bonding state crosses the Fermi level,resulting in the formation ofγpockets at the Fermi surface.These findings align with angle-resolved photoemission spectroscopy experimental data.Our results provide theoretical validation for the recent experimental discovery of ambient-pressure superconductivity in La_(3)Ni_(2)O_(7)thin films and underscore the significant impact of film thickness and carrier doping on electronic property modulation.
基金supported by the Natural Science Foundation of Guangdong Province of China(Grant No.2025A1515011071)the National Natural Science Foundation of China(Grant Nos.92065110,11974048,and 12074334)the Beijing Municipal Natural Science Foundation Key Research Topics(Grant No.Z230006)。
文摘Recent studies have successfully demonstrated high-Tc superconductivity in bilayer nickelate La3Ni2O7.However,research on modulating the structural and transport characteristics of La3Ni2O7 films by applying“chemical”compressive pressure through cation substitution is still limited.Here,we address this issue in the La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,1.5,2.0,and 2.5)thin film samples.It was found that using Nd3+with a smaller radius instead of La3+can reduce the c-axis lattice constant and shift the metal-insulator transition(MIT)temperature TMIT.To probe the origin of the MIT at cryogenic temperatures,experimental measurements of magnetoresistance were conducted,and theoretical analysis was carried out using the Kondo model,Hikami-Larkin-Nagaoka equation,and other methods.The results indicate that as Nd doping rises,the contributions of the Kondo effect and two-dimensional weak localization(WL)first decrease and then increase.The total contribution of WL and the Kondo effect in the mid-doped La_(1.5)Nd_(1.5)Ni_(2)O_(7)sample was the smallest,which to some extent explains the changes in TMIT.The Kondo effect dominates in other La_(3−x)Nd_(x)Ni_(2)O_(7)(x=0,1.0,2.0,and 2.5)samples.This work demonstrates that cation doping has a significant impact on bilayer nickelates,providing experimental evidence for understanding the physical mechanism of the MIT in bilayer nickelates.
基金supported by the National Natural Science Foundation of China(Nos.62027818,61874034,11974320)the National Key R&D Program of China(No.2021YFB3202500)+1 种基金the Key R&D Program of Shanxi Province(No.202102030201008)the International Science and Technology Cooperation Program of Shanghai Science and Technology Innovation Action Plan(No.21520713300).
文摘Doped gallium oxide-based thin films are a class of wide-band semiconductor materials with the ad-vantages of chemically stable,tunable bandgap,and offer the benefit of ultraviolet response.In order to obtain photodetectors(PDs)with superior response,higher demands are placed on the quality of growth and processing of doped films.In this work,Zn-doped ternary metal oxide ZnGaO(ZGO)thin films were grown using the atomic layer deposition technique and annealed at different temperatures under an oxy-gen atmosphere.The results showed that the high-quality ZGO films with good uniformity,high visible light transmittance,low roughness,and significant reduction of oxygen vacancies were obtained after an-nealing.Subsequently,metal-semiconductor-metal PDs were prepared based on the studied ZGO films.The responsivity(R),detectivity(D^(∗)),and external quantum efficiency(EQE)of the optimized device are 61.8 A W^(-1),1.2×10^(12) Jones,and 255.9%,respectively.Compared to the unannealed device,the an-nealed ZGO PD achieves a maximum 309-fold increase in responsivity.This thermal engineering work may provide a strong reference for the development of low-cost,large-area,high-performance ultraviolet detection.And it also broadens the application of ternary metal oxides in optoelectronics.
基金supported by the National Key Research Program of China(Grant Nos.2021YFA1401900,2022YFA1403300,and 2020YFA0309100)the Innovation Program for Quantum Science and Technology(Grant Nos.2021ZD0302602 and 2024ZD0300103)+1 种基金the National Natural Science Foundation of China(Grant No.12074073)for samplefabrication and measurementthe support by the The Basic Research Program of the Chinese Academy of Sciences Based on Major Scientific Infrastructures(Grant No.JZHKYPT-2021-08).
文摘When a perpendicular magnetic field penetrates a thin slab of a type-Ⅱ superconductor it produces vortices,with one vortex per flux quantum,h/2e.The vortices interact repulsively and form an ordered array(Abrikosov lattice)in clean systems,while strong disorder changes the lattice into a vortex glass.The collective vortex dynamics is extremely vulnerable to external perturbations.Consequently,although of great importance,experimental observation is limited.Here we investigate type-Ⅱ superconducting films(PdBi_(2)and NbSe_(2))with surface acoustic waves(SAWs)at mK temperature.When sweeping the magnetic field at an extremely slow rate,we observe a series of spikes in the attenuation and velocity of the SAW,on average separated in field by approximately Hc1.We propose the following scenario:The vortex-free region at the edges of the film produces an edge barrier across which the vortices can enter or leave.When the applied field changes,the induced supercurrents flowing along this edge region lowers this barrier until there is an instability.At that point,vortices avalanche into(or out of)the bulk and change the vortex crystal,suggested by the sharp jump in each such spike.The vortices then gradually relax to a new stable pinned configuration,leading to a~30 s relaxation after the jump.Our observation enriches the limited experimental evidence on the important topic of real-time vortex dynamics in superconductors.
基金supported by the Jilin Provincial Scientific and Technological Development Program(No.20220101036JC)。
文摘By doping with Mg atoms,the bandgap of Mg-doped NiO thin films can be adjusted larger.By using NiO and MgO as sputtering targets,Mg-doped NiO thin films were deposited using radio-frequency magnetron co-sputtering method in pure argon and pure oxygen gas,respectively.The crystal structure,morphological characteristics,composition and optical properties of the obtained films were compared by X-ray diffraction(XRD),scanning electron microscope(SEM),energy dispersive spectrometer(EDS)and ultraviolet(UV)-visible spectrophotometer.The properties of the thin films deposited in different sputtering gases are quite different.For the films deposited in pure argon gas,it is a polycrystalline thin film with(200)preferred orientation,while the film deposited in pure oxygen has no preferred orientation.The grain size,molar ratio of Mg to Ni atoms and optical bandgap are larger for the films deposited in pure argon gas than those deposited in oxygen gas.
文摘T-carbon is a new allotrope of carbon materials,and it displays high hardness and low density.Nevertheless,the hardening mechanisms of T-carbon thin films under nanoindentation remain elusive.This work utilizes molecular dynamics simulation to explore the hardening mechanisms of T-carbon thin films under nanoindentation with variations of loading velocities and temperatures.The results reveal that a loading velocity increase at a given temperature raises the nanoindentation force.The increase in nanoindentation force is due to graphitization,which is related to the fracture of tetrahedral structures in T-carbon thin films.However,increased graphitization caused by an increased temperature lowers the nanoindentation force at a given loading velocity.The increased graphitization is influenced by both the fractured tetrahedrons and the deformation of inter-tetrahedron bond angles.This is attributed to the loss of thermal stability and the lower density of T-carbon thin films as the temperature increases.These findings have significant implications for the design of nanodevices for specific application requirements.
基金supported by the National Natural Science Foundation of China(Grant No.12474110)the National Key Research and Development Program of China(Grant No.2022YFA1403300)+1 种基金the Innovation Program for Quantum Science and Technology(Grant No.2024ZD0300103)the Shanghai Municipal Science and Technology Major Project(Grant No.2019SHZDZX01)。
文摘In antiferromagnets,dipolar coupling is often disregarded due to the cancellation of magnetic moments between the two sublattices,so that the spin-wave dispersion is predominantly determined by exchange interactions.However,antiferromagnetic spin waves typically involve a slight misalignment of the magnetic moments on the sublattices,which gives rise to a small net magnetization enabling long-range dipolar coupling.In this paper,we investigate the role of dipolar coupling in spin-wave excitations and its influence on the resulting dispersion.Our findings show that:(i)when the Néel vector is perpendicular to the film plane or lies within the film plane and parallel to the wave vector,the dispersion branches can be divided into two groups:those unaffected by the dipolar field and those influenced by it.In these cases,the total magnetic moment remains linearly polarized,but the polarization directions differ between the two types of branches;(ii)when the Néel vector lies in the film plane and is perpendicular to the wave vector,the dipolar interactions affect both types of dispersion branches,leading to their hybridization.This hybridization alters the polarization of the magnetic moment,resulting in elliptical polarization.
基金funded by The Vietnam Ministry of Education and Training under project number B2024-BKA-12.
文摘Minority carrier lifetimesτare a fundamental parameter in semiconductor devices,representing the average time it takes for excess minority carriers to recombine.This characteristic is crucial for understanding and optimizing the performance of semiconductor materials,as it directly influences charge carrier dynamics and overall device efficiency.This work presents a development of PbS thin film deposited by thermal evaporation,at which the PbS thin film was further employed for structural,optical properties,andτ.Especially,the PbS film is probed with an in-house setup for identifying theτ.The procedure is to subject the PbS thin film with a flashlight from a light source with a middle rotating frequency.The derivedτin the in-house characterization setup agrees well with the value from the higher cost characterizing approach of photoluminescence.Therefore,the in-house setup provides additional tools for identifying theτvalues for semiconductor devices.
基金Projects(50771092,21073162) supported by the National Natural Science Foundation of ChinaProject(2005DKA10400-Z15) supported by the Ministry of Science and Technology of China
文摘CoNiFe,CoNiFeB and CoNiFeP soft magnetic thin films were prepared by cyclic voltammetry method.The morphologies,composition and structures were characterized by scanning electron microscope（SEM）,energy-dispersive X-ray spectroscope（EDS） and X-ray diffractometer（XRD）.The soft magnetic properties were investigated through vibrating sample magnetometer（VSM）.The corrosion resistance was investigated through Tafel polarization and electrochemical impedance spectroscopic（EIS）.The results show that all the electrodeposited CoNiFe,CoNiFeB and CoNiFeP films are mixtures of crystalline and amorphous phases,and high amount of boron/phosphorus-containing additives favors the formation of amorphous state.Nanostructure is obtained in CoNiFe and CoNiFeB films.The inclusion of boron causes the film more dense and also increases its corrosion resistance.Meanwhile,the inclusion of boron lowers its coercivity（Hc） from 851.48 A/m to 604.79 A/m,but the saturation magnetic flux density（Bs） is almost unchanged.However,the addition of phosphorus greatly increases the film particle size and decreases its corrosion stability.The coercivity（Hc） of CoNiFeP film is also highly increased to 12485.79 A/m,and its saturation magnetic flux density（Bs） is greatly decreased to 1.25 T.
基金Project (60908023) supported by the National Natural Science Foundation of China
文摘Copper （Cu） doped beryllium （Be） thin films were deposited on silicon substrates by using a simple ion beam sputtering method, which can also realize the varying of Cu doping concentration. Detailed morphological and structural characterizations of the samples clearly disclose a microstructure evolution of films upon doping Cu. Doping Cu can effectively suppress film grain growth, causing a small grain size as well as uniform size distribution. Furthermore, doping Cu affects the crystallographic texture of film, which leads to the formation of more compact film structure. In particular, the surface smoothness of the doped films is significantly improved, which makes them promising candidates for various applications.
文摘Using H 2 diluted silane,series of μc Si∶H films are fabricated at low temperature with VHF PECVD.The thickness measurements reveal that the deposition rates are obviously enhanced with higher plasma excitation frequency or working pressure,but increase firstly and then decrease with the increase of plasma power density.Raman spectra show that the crystallinity and the average grain sizes of the films strongly depend on the temperature of substrate and the concentration of silane.However,the plasma excitation frequency only has effect on the crystallinity,and a maximum occurs during the further increase of plasma excitation frequency.From XRD and TEM experiments,three preferential crystalline orientations (111),(220) and (311) are observed,and the average grain sizes are different for every crystalline orientation.
基金This work is supported by nology Cooperation Plan of LKS[2013]15）, the 2012 Doctor Normal University of China the Science and Tech- Guizhou Province （J- Foundation of Guizhou （Xun Zhou） Scholars of Ministry of Education of China, Ph.D. Programs Foundation of Ministry of Education of China （No.20120171120011）, the Open Fund of the State Key Laboratory on Integrated Optoelectronics of Jilin University （No.IOKL2013KF14）, the National Natural Science Foundation of China （No.61273310）.
文摘The ferromagnetic manganese doped TiN films were grown by plasma assisted molecular beam epitaxy on MgO（001） substrates. The nitrogen concentration and the ratio of manganese at Ti lattice sites increase after the plasma annealing post treatment. TIN（002） peak shifts toward low angle direction and TiN（111） peak disappears after the post treatment. The lattice expansion and peak shift are mainly ascribed to the reduction of nitrogen vacancies in films. The magnetism was suppressed in as-prepared sample due to the pinning effect of the nitrogen vacancies at defect sites or interface. The magnetism can be activated by the plasma implantation along with nitrogen vacancies reduce. The decrease of nitrogen vacancies leads to the enhancement of ferromagnetism.
基金the Foundation of Wuhan University of Science and Technology
文摘The Bi4Ti3Oi2 and Bi3.25La0.75Ti3O12 thin films were prepared on the Pt/Ti/SiO2/Si substrate using the sol-gel method. The effect of La doping on the microstructure and ferroelectric properties of Bi4Ti3O12 films were investigated. Both the Bi4Ti3O12 and Bi3.25La0.75Ti3O12 thin films exhibited typical bismuth layered perovskite structure. The 2Pr （remanent polarization） value of Bi3.25La0.75Ti3O12 thin films is 18.6 μC/cm^2, which is much larger than that of Bi4Ti3O12 thin films. And the Bi3.2eLa0.75Ti3O12 films show fatigue-free behavior, while the Bi4Ti3O12 thin films exhibit the fatigue problem. The mechanism of improvement of La doping was discussed.
基金the National Natural Science Foundation of China (No. 60571010)the Open Foundation of the Key Laboratory of Ferroelectric and Piezoelectric Materials and Devices of Hubei Province in Hubei University
文摘FePt thin films and [FePt/Ag]n multilayer thin films were prepared by magnetron sputtering technique and subsequent annealing process. By comparing the microstructure and magnetic properties of these two kinds of thin films, effects of Ag addition on the structure and properties of FePt thin films were investigated. Proper Ag addition was found helpful for FePt phase transition at lower annealing temperature. With Ag addition, the magnetic domain pattern of FePt thin film changed from maze-like pattern to more discrete island-like domain pattern in [FePt/Ag]n multilayer thin films. In addition, introducing nonmagnetic Ag hindered FePt grains from growing larger. The in-depth defects in FePt films and [FePt/Ag]n multilayer films verify that Ag addition is attributed to a large number of pinning site defects in [FePt/Ag]n film and therefore has effects on its magnetic properties and microstructure.
