This paper analyzes the applications of four air terminal device（ATD）models（i.e.,the basic model,the box model,the N-point momentum model,the jet main region specification model）in computational fluid dynamics（CF...This paper analyzes the applications of four air terminal device（ATD）models（i.e.,the basic model,the box model,the N-point momentum model,the jet main region specification model）in computational fluid dynamics（CFD）simulation and their performance in case study.A full-scale experiment is performed in an environment chamber,and the measured air velocity and temperature fields are compared with the simulation results by using four ATD models.The velocity and temperature fields are measured by an omni-directional thermo-anemometer system.It demonstrates that the basic model and the box model are not applicable to complicated air terminal devices.At the occupant area,the relative errors between simulated and measured air velocities are less than 20% based on the N-point momentum model and the jet main region specification model.Around the ATD zone,the relative error between the numerical and measured air velocity based on the jet main region specification model is less than 15%.The jet main region specification model is proved to be an applicable approach and a more accurate way to study the airflow pattern around the ATD with complicated geometry.展开更多
In edge control systems(ECSs),edge computing demands more local data processing power,while traditional industrial programmable logic controllers(PLCs)cannot meet this demand.Thus,edge intelligent controllers(EICs)hav...In edge control systems(ECSs),edge computing demands more local data processing power,while traditional industrial programmable logic controllers(PLCs)cannot meet this demand.Thus,edge intelligent controllers(EICs)have been developed,making their secure and reliable operation crucial.However,as EICs communicate sensitive information with resource-limited terminal devices(TDs),a low-cost,efficient authentication solution is urgently needed since it is challenging to implement traditional asymmetric cryptography on TDs.In this paper,we design a lightweight authentication scheme for ECSs using low-computational-cost hash functions and exclusive OR(XOR)operations;this scheme can achieve bidirectional anonymous authentication and key agreement between the EIC and TDs to protect the privacy of the devices.Through security analysis,we demonstrate that the authentication scheme can provide the necessary security features and resist major known attacks.Performance analysis and comparisons indicate that the proposed authentication scheme is effective and feasible for deployment in ECSs.展开更多
The development tendency of“More than Display”is proposed for the display and semiconductor technologies,and the new-brand architecture of heterogeneous integration system in display(HiSID)is established in accordan...The development tendency of“More than Display”is proposed for the display and semiconductor technologies,and the new-brand architecture of heterogeneous integration system in display(HiSID)is established in accordance with the demands of third generation Micro/Mini-LED devices.Many functional units(e.g.,display units,storage units,sensing units,com-munication units and computing units)are integrated into one display main-board based on the semiconductor technology and electronic packaging.The advantages and details of miniaturization,intelligent,advanced integration,signal integrity with low latency performance,process compatibility and reliability are introduced.The interconnection requirements and design of the HiSID model with artificial intelligence are also summarized in this paper.It will provide technical guidance and references for the commercial application,core technology,and breakthrough direction of the HiSID module in display technology.展开更多
In this paper,using aδ-doping dual-channel structure and GaAs substrate,a real space transfer transistor(RSTT)is designed and fabricated successfully.It has the standardΛ-shaped negative resistance I-V characteristi...In this paper,using aδ-doping dual-channel structure and GaAs substrate,a real space transfer transistor(RSTT)is designed and fabricated successfully.It has the standardΛ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has.The negative resistance parameters can be varied by changing gate voltage(VGS).For example,the PVCR varies from 2.1 to 10.6 while VGS changes from 0.6 V to 1.0 V.The transconductance for IP(ΔIP=ΔVGS)is 0.3 mS.The parameters of VP,VV and threshold gate voltage(VT)for negative resistance characteristics arising are all smaller than the value reported in the literature.Therefore,this device is suitable for low dissipation power application.展开更多
文摘This paper analyzes the applications of four air terminal device（ATD）models（i.e.,the basic model,the box model,the N-point momentum model,the jet main region specification model）in computational fluid dynamics（CFD）simulation and their performance in case study.A full-scale experiment is performed in an environment chamber,and the measured air velocity and temperature fields are compared with the simulation results by using four ATD models.The velocity and temperature fields are measured by an omni-directional thermo-anemometer system.It demonstrates that the basic model and the box model are not applicable to complicated air terminal devices.At the occupant area,the relative errors between simulated and measured air velocities are less than 20% based on the N-point momentum model and the jet main region specification model.Around the ATD zone,the relative error between the numerical and measured air velocity based on the jet main region specification model is less than 15%.The jet main region specification model is proved to be an applicable approach and a more accurate way to study the airflow pattern around the ATD with complicated geometry.
基金supported by the National Key R&D Program of China(No.2021YFB2012400)the National Natural Science Foundation of China(No.62173101)+1 种基金the Basic and Applied Basic Research Funding of Guangdong Province,China(Nos.2022A1515011558 and 2022A1515010865)the Key Laboratory of On-Chip Communication and Sensor Chip of Guangdong Higher Education Institutes,China(No.2023KSYS002)。
文摘In edge control systems(ECSs),edge computing demands more local data processing power,while traditional industrial programmable logic controllers(PLCs)cannot meet this demand.Thus,edge intelligent controllers(EICs)have been developed,making their secure and reliable operation crucial.However,as EICs communicate sensitive information with resource-limited terminal devices(TDs),a low-cost,efficient authentication solution is urgently needed since it is challenging to implement traditional asymmetric cryptography on TDs.In this paper,we design a lightweight authentication scheme for ECSs using low-computational-cost hash functions and exclusive OR(XOR)operations;this scheme can achieve bidirectional anonymous authentication and key agreement between the EIC and TDs to protect the privacy of the devices.Through security analysis,we demonstrate that the authentication scheme can provide the necessary security features and resist major known attacks.Performance analysis and comparisons indicate that the proposed authentication scheme is effective and feasible for deployment in ECSs.
文摘The development tendency of“More than Display”is proposed for the display and semiconductor technologies,and the new-brand architecture of heterogeneous integration system in display(HiSID)is established in accordance with the demands of third generation Micro/Mini-LED devices.Many functional units(e.g.,display units,storage units,sensing units,com-munication units and computing units)are integrated into one display main-board based on the semiconductor technology and electronic packaging.The advantages and details of miniaturization,intelligent,advanced integration,signal integrity with low latency performance,process compatibility and reliability are introduced.The interconnection requirements and design of the HiSID model with artificial intelligence are also summarized in this paper.It will provide technical guidance and references for the commercial application,core technology,and breakthrough direction of the HiSID module in display technology.
文摘In this paper,using aδ-doping dual-channel structure and GaAs substrate,a real space transfer transistor(RSTT)is designed and fabricated successfully.It has the standardΛ-shaped negative resistance I-V characteristics as well as a level and smooth valley region that the conventional RSTT has.The negative resistance parameters can be varied by changing gate voltage(VGS).For example,the PVCR varies from 2.1 to 10.6 while VGS changes from 0.6 V to 1.0 V.The transconductance for IP(ΔIP=ΔVGS)is 0.3 mS.The parameters of VP,VV and threshold gate voltage(VT)for negative resistance characteristics arising are all smaller than the value reported in the literature.Therefore,this device is suitable for low dissipation power application.
