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Superconducting fault current limiter for multi-terminal HVDC grid protection
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作者 Wenxin Li Ying Xin 《Superconductivity》 2025年第3期83-85,共3页
With the global energy transition,the proportion of renewable energy power generation in total electricity production has exceeded 30%and continues to rise,even the ratio is higher in China.Multi-terminal high-voltage... With the global energy transition,the proportion of renewable energy power generation in total electricity production has exceeded 30%and continues to rise,even the ratio is higher in China.Multi-terminal high-voltage direct-current(MT-HVDC)transmission systems have advantages of integration of distributed renewable energy sources,dynamic grid interconnections,and reliable islanding operation capabilities,being critical for next-generation power grid.Current limiting technologies are pivotal in maintaining grid safety and stability,especially for HVDC systems without natural zero-crossing point in fault currents.In this perspective,a superconducting fault current limiter(SFCL)with combination of resistance and inductance is necessary and more effective solution in protecting MT-HVDC transmission systems. 展开更多
关键词 renewable energy power generation limiting technologies global energy transitionthe maintaining gr superconducting fault current limiter reliable islanding operation capabilitiesbeing multi terminal high voltage direct current renewable energy
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The Partial Discharge Characteristics of Inner Air Gap Inside High-Voltage Cable Termination for High-Speed Trains
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作者 Dongli Xin Guangning Wu +5 位作者 Guoqiang Gao Kui Chen Kai Liu Yunlong Xie Mu Lin Bo Li 《High Voltage》 2025年第5期1110-1124,共15页
The air gap at the interface inside the cable terminations for high-speed trains and the partial discharge caused by it are two important factors affecting the insulating performance.The development of air gap and par... The air gap at the interface inside the cable terminations for high-speed trains and the partial discharge caused by it are two important factors affecting the insulating performance.The development of air gap and partial discharge will eventually lead to breakdown faults.To investigate the evolutionary characteristics of the air gap and partial discharge,the simulation models and samples of cable terminations containing defects are constructed in this paper.By analysing the variation law of the electric field and the multidimensional information of partial discharge,the evolution process of the air gap is divided into four wellcharacterised stages.Especially in the third stage,the partial discharge extinction voltage is 51.41%lower than that of the defect-free samples and even lower than the working voltage.The asymmetry of discharge is the most significant factor.The volume of discharge in the third quadrant is significantly higher than that in the first quadrant.This important feature can be applied to the inspection and evaluation of the insulating state of the cable terminations.The partial discharge characteristics of the air gap revealed in this paper are proposed to provide an important theoretical supplement to the study of interface discharges between heterogeneous dielectrics. 展开更多
关键词 simulation models cable terminations partial dischargethe high voltage cable termination breakdown faultsto air gap partial discharge
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Proton exchange membrane fuel cell voltage-tracking using artificial neural networks 被引量:1
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作者 Seyed Mehdi RAKHTALA Reza GHADERI Abolzal RANJBAR NOEI 《Journal of Zhejiang University-Science C(Computers and Electronics)》 SCIE EI 2011年第4期338-344,共7页
Transients in load and consequently in stack current have a significant impact on the performance and durability of fuel cells.The delays in auxiliary equipments in fuel cell systems (such as pumps and heaters) and ba... Transients in load and consequently in stack current have a significant impact on the performance and durability of fuel cells.The delays in auxiliary equipments in fuel cell systems (such as pumps and heaters) and back pressures degrade system performance and lead to problems in controlling tuning parameters including temperature,pressure,and flow rate.To overcome this problem,fast and delay-free systems are necessary for predicting control signals.In this paper,we propose a neural network model to control the stack terminal voltage as a proper constant and improve system performance.This is done through an input air pressure control signal.The proposed artificial neural network was constructed based on a back propagation network.A fuel cell nonlinear model,with and without feed forward control,was investigated and compared under random current variations.Simulation results showed that applying neural network feed forward control can successfully improve system performance in tracking output voltage.Also,less energy consumption and simpler control systems are the other advantages of the proposed control algorithm. 展开更多
关键词 Feed forward control Neural network Proton exchange membrane (PEM) fuel cell terminal voltage tracking
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High-voltage 4H-SiC PiN diodes with the etched implant junction termination extension 被引量:2
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作者 Juntao Li Chengquan Xiao +6 位作者 Xingliang Xu Gang Dai Lin Zhang Yang Zhou An Xiang Yingkun Yang Jian Zhang 《Journal of Semiconductors》 EI CAS CSCD 2017年第2期47-50,共4页
This paper presents the design and fabrication of an etched implant junction termination extension(JTE)for high-voltage 4H-SiC PiN diodes. Unlike the conventional JTE structure, the proposed structure utilizes multi... This paper presents the design and fabrication of an etched implant junction termination extension(JTE)for high-voltage 4H-SiC PiN diodes. Unlike the conventional JTE structure, the proposed structure utilizes multiple etching steps to achieve the optimum JTE concentration range. The simulation results show that the etched implant JTE method can improve the blocking voltage of SiC PiN diodes and also provides broad process latitude for parameter variations, such as implantation dose and activation annealing condition. The fabricated SiC PiN diodes with the etched implant JTE exhibit a highest blocking voltage of 4.5 kV and the forward on-state voltage of 4.6 V at room temperature. These results are of interest for understanding the etched implant method in the fabrication of high-voltage power devices. 展开更多
关键词 silicon carbide PiN diode etched implant junction termination extension blocking voltage
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