Frank L.Lewis (Life Fellow,IEEE) received the Ph.D.degree from the Georgia Institute of Technology.He is currently a member of the National Academy of Inventors and the Moncrief-O'Donnell Chair with The University...Frank L.Lewis (Life Fellow,IEEE) received the Ph.D.degree from the Georgia Institute of Technology.He is currently a member of the National Academy of Inventors and the Moncrief-O'Donnell Chair with The University of Texas at Arlington Research Institute.He is the author of seven U.S.patents,numerous journal special issues and journal articles,and 20 books.He received the Fulbright Research Award,the NSF Research Initiation Grant,the ASEE Terman Award,the International Neural Network Society Gabor Award,the U.K.Institute of Measurement and Control Honeywell Field Engineering Medal,the IEEE Computational Intelligence Society Neural Networks Pioneer Award,the AIAA Intelligent Systems Award,and the AACC Ragazzini Award.展开更多
The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor （MOS） capacitor are investigated. The results measured by X-ray photoelectron spectroscopy （XPS） and high-resolution transmission el...The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor （MOS） capacitor are investigated. The results measured by X-ray photoelectron spectroscopy （XPS） and high-resolution transmission electron microscopy （HRTEM） show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.展开更多
文摘Frank L.Lewis (Life Fellow,IEEE) received the Ph.D.degree from the Georgia Institute of Technology.He is currently a member of the National Academy of Inventors and the Moncrief-O'Donnell Chair with The University of Texas at Arlington Research Institute.He is the author of seven U.S.patents,numerous journal special issues and journal articles,and 20 books.He received the Fulbright Research Award,the NSF Research Initiation Grant,the ASEE Terman Award,the International Neural Network Society Gabor Award,the U.K.Institute of Measurement and Control Honeywell Field Engineering Medal,the IEEE Computational Intelligence Society Neural Networks Pioneer Award,the AIAA Intelligent Systems Award,and the AACC Ragazzini Award.
基金the National Basic Research Program of China(Grant No.2010CB327505)the National Defense Advance Research Foundation,China(Grant No.9140A08030511DZ111)the National Defense Advance Research Project,China(Grant No.51308030306)
文摘The interfacial characteristics of Al/Al2O3/ZnO/n-GaAs metal-oxide-semiconductor （MOS） capacitor are investigated. The results measured by X-ray photoelectron spectroscopy （XPS） and high-resolution transmission electron microscopy （HRTEM） show that the presence of ZnO can effectively suppress the formations of oxides at the interface between the GaAs and gate dielectric and gain smooth interface. The ZnO-passivated GaAs MOS capacitor exhibits a very small hysteresis and frequency dispersion. Using the Terman method, the interface trap density is extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality.
