Te-doped GaSb single crystals are studied by measuring Hall effect, infrared （IR） transmission and photoluminescence （PL） spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as ...Te-doped GaSb single crystals are studied by measuring Hall effect, infrared （IR） transmission and photoluminescence （PL） spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.展开更多
Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski(LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is ...Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski(LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.展开更多
GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in a...GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in ambient antimony.The annealed samples have been studied by Hall effect measurement,infrared（IR）optical transmission,Glow discharge mass spectroscopy（GDMS） and photoluminescence（PL） spectroscopy.After annealing,Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility,along with an improvement of below gap IR transmission.Native acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy level.The mechanism of the variation of the defect and its influence on the material properties are discussed.展开更多
The sluggish reaction kinetics and poor structure stability of transition metal dichalcogenides(TMDs)-based anodes in potassium-ion batteries(KIBs)usually cause limited rate performance and rapid capacity decay,which ...The sluggish reaction kinetics and poor structure stability of transition metal dichalcogenides(TMDs)-based anodes in potassium-ion batteries(KIBs)usually cause limited rate performance and rapid capacity decay,which seriously impede their application.Herein,we report a vacancy engineering strategy for preparing a class of Te-doped 1T'-ReSe_(2)anchored onto MXene(Te-ReSe_(2)/MXene)as an advanced anode for KIBs with high performance.By taking advantage of the synergistic effects of the defective Te-ReSe_(2)arrays with expanded interlayers and the elastic MXene nanosheets with self-autoadjustable function,the Te-ReSe_(2)/MXene superstructure exhibits boosted K^(+)ion storage performance,in terms of high reversible capacity(361.1 mA h g^(−1)at 0.1 A g^(−1)over 200 cycles),excellent rate capability(179.3 mA h g^(−1)at 20 A g^(−1)),ultra-long cycle life(202.8 mA h g^(−1)at 5 A g^(−1)over 2000 cycles),and steady operation in flexible full battery,presenting one of the best performances among the TMDs-based anodes reported thus far.The kinetics analysis and theoretical calculations further indicate that satisfactory pseudocapacitive property,high electronic conductivity and outstanding K^(+)ion adsorption/diffusion capability corroborate the accelerated reaction kinetics.Especially,structural characterizations clearly elaborate that the Te-ReSe_(2)/MXene undergoes reversible evolutions of an initial insertion process followed by a conversion reaction.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.61474104 and 61504131)
文摘Te-doped GaSb single crystals are studied by measuring Hall effect, infrared （IR） transmission and photoluminescence （PL） spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.
文摘Lightly Te-doped GaSb samples grown by the liquid encapsulated Czochralski(LEC) method have been studied by Hall measurements and low-temperature PL spectroscopy. The results suggest that acceptor-related antisite is the dominant defect in n-type GaSb with low Te-doping concentration. As the Te concentration increases, gallium vacancy related defects become the main acceptor. A new band of around 665 meV is observed in the GaSb sample with the lowest Te-doping concentration. The variation of the acceptor defects and their influence on the electronic and optical property on the n-GaSb single crystal are discussed based on the results.
基金Project supported by the National Natural Science Foundation of China(Nos.61474104,61504131)
文摘GaSb is the most suitable substrate in the epitaxial growth of mixed semiconductors of GaSb system.In this work,Te-doped GaSb bulk crystals with different doping concentration have been annealed at 550℃ for100 h in ambient antimony.The annealed samples have been studied by Hall effect measurement,infrared（IR）optical transmission,Glow discharge mass spectroscopy（GDMS） and photoluminescence（PL） spectroscopy.After annealing,Te-doped GaSb samples exhibit a decrease of carrier concentration and increase of mobility,along with an improvement of below gap IR transmission.Native acceptor related electrical compensation analysis suggests a formation of donor defect with deeper energy level.The mechanism of the variation of the defect and its influence on the material properties are discussed.
基金the National Natural Science Foundation of China(22005223 and 21975187)Guangdong Basic and Applied Basic Research Foundation(2019A1515012161)+7 种基金the Special Innovational Project of Department of Education of Guangdong Province(2019KTSCX186 and 2017KCXTD031)the Science Foundation for Young Teachers of Wuyi University(2019td01)the Science Foundation for High-Level Talents of Wuyi University(2018RC50 and 2017RC23)Wuyi University-Hong Kong-Macao Joint Research Project(2019WGALH10)the Innovative Leading Talents of Jiangmen(Jiangren(2019)7)the Science and Technology Projects of Jiangmen((2017)307,(2017)149,(2018)352)the Research Fund of the State Key Laboratory of Solidification Processing(NPU),China(SKLSP202004)Guangdong Key Building Discipline Research Capability Enhancement Funds(2021ZDJS093).
文摘The sluggish reaction kinetics and poor structure stability of transition metal dichalcogenides(TMDs)-based anodes in potassium-ion batteries(KIBs)usually cause limited rate performance and rapid capacity decay,which seriously impede their application.Herein,we report a vacancy engineering strategy for preparing a class of Te-doped 1T'-ReSe_(2)anchored onto MXene(Te-ReSe_(2)/MXene)as an advanced anode for KIBs with high performance.By taking advantage of the synergistic effects of the defective Te-ReSe_(2)arrays with expanded interlayers and the elastic MXene nanosheets with self-autoadjustable function,the Te-ReSe_(2)/MXene superstructure exhibits boosted K^(+)ion storage performance,in terms of high reversible capacity(361.1 mA h g^(−1)at 0.1 A g^(−1)over 200 cycles),excellent rate capability(179.3 mA h g^(−1)at 20 A g^(−1)),ultra-long cycle life(202.8 mA h g^(−1)at 5 A g^(−1)over 2000 cycles),and steady operation in flexible full battery,presenting one of the best performances among the TMDs-based anodes reported thus far.The kinetics analysis and theoretical calculations further indicate that satisfactory pseudocapacitive property,high electronic conductivity and outstanding K^(+)ion adsorption/diffusion capability corroborate the accelerated reaction kinetics.Especially,structural characterizations clearly elaborate that the Te-ReSe_(2)/MXene undergoes reversible evolutions of an initial insertion process followed by a conversion reaction.
